7 resultados para Ligas Al-Sn
em CaltechTHESIS
Resumo:
To explain the ^(26)Mg isotopic anomaly seen in meteorites (^(26)Al daughter) as well as the observation of 1809-keV γ rays in the interstellar medium (live decay of 26Al) one must know, among other things, the destruction rate of ^(26)Al. Properties of states in ^(27)Si just above the ^(26)Al + p mass were investigated to determine the destruction rate of ^(26)Al via the ^(26)Al(p,γ)^(27)Si reaction at astrophysical temperatures.
Twenty micrograms of ^(26)Al were used to produce two types of Al_2O_3 targets by evaporation of the oxide. One was onto a thick platinum backing suitable for (p,γ) work, and the other onto a thin carbon foil for the (^3He,d) reaction.
The ^(26)Al(p,γ)^(27)Si excitation function, obtained using a germanium detector and voltage-ramped target, confirmed known resonances and revealed new ones at 770, 847, 876, 917, and 928 keV. Possible resonances below the lowest observed one at E_p = 286 keV were investigated using the ^(26)Al(^3He,d)^(27)Si proton-transfer reaction. States in 27Si corresponding to 196- and 286-keV proton resonances were observed. A possible resonance at 130 keV (postulated in prior work) was shown to have a strength of wγ less than 0.02 µeV.
By arranging four large Nal detector as a 47π calorimeter, the 196-keV proton resonance, and one at 247 keV, were observed directly, having wγ = 55± 9 and 10 ± 5 µeV, respectively.
Large uncertainties in the reaction rate have been reduced. At novae temperatures, the rate is about 100 times faster than that used in recent model calculations, casting some doubt on novae production of galactic ^(26)Al.
Resumo:
Part I.
In recent years, backscattering spectrometry has become an important tool for the analysis of thin films. An inherent limitation, though, is the loss of depth resolution due to energy straggling of the beam. To investigate this, energy straggling of 4He has been measured in thin films of Ni, Al, Au and Pt. Straggling is roughly proportional to square root of thickness, appears to have a slight energy dependence and generally decreases with decreasing atomic number of the adsorber. The results are compared with predictions of theory and with previous measurements. While Ni measurements are in fair agreement with Bohr's theory, Al measurements are 30% above and Au measurements are 40% below predicted values. The Au and Pt measurements give straggling values which are close to one another.
Part II.
MeV backscattering spectrometry and X-ray diffraction are used to investigate the behavior of sputter-deposited Ti-W mixed films on Si substrates. During vacuum anneals at temperatures near 700°C for several hours, the metallization layer reacts with the substrate. Backscattering analysis shows that the resulting compound layer is uniform in composition and contains Ti, Wand Si. The Ti:W ratio in the compound corresponds to that of the deposited metal film. X-ray analyses with Reed and Guinier cameras reveal the presence of the ternary TixW(1-x)Si2 compound. Its composition is unaffected by oxygen contamination during annealing, but the reaction rate is affected. The rate measured on samples with about 15% oxygen contamination after annealing is linear, of the order of 0.5 Å per second at 725°C, and depends on the crystallographic orientation of the substrate and the dc bias during sputter-deposition of the Ti-W film.
Au layers of about 1000 Å thickness were deposited onto unreacted Ti-W films on Si. When annealed at 400°C these samples underwent a color change,and SEM micrographs of the samples showed that an intricate pattern of fissures which were typically 3µm wide had evolved. Analysis by electron microprobe revealed that Au had segregated preferentially into the fissures. This result suggests that Ti-W is not a barrier to Au-Si intermixing at 400°C.
Resumo:
I. Schottky barriers produced by polymeric sulfur nitride, (SN)x, on nine common III-V and II-VI compound semiconductors are compared to barriers formed by Au. The conductor (SN)x produces significantly higher barriers to n-type semiconductors and lower barriers to p-type semiconductors than Au, the most electronegative elemental metal. The barrier height improvement, defined as ɸ(SN)x - ɸ(Au), is smaller on covalent semiconductors than on ionic semiconductors; (SN)x barriers follow the ionic-covalent transition. Details of (SN)x film deposition, samples preparation, and barrier height measurements are described.
II. The rate of dissolution of amorphous Si into solid Al is measured. The rate of movement of the amorphous Si/Al interface is found to be much faster than predicted by a simple model of the transport of Si through Al. This result is related to defects in the growth of epitaxial Si using the solid phase epitaxy process.
Resumo:
Elements with even atomic number (Z) in the interval 50 ≤ Z ≤ 58 have been resolved in the cosmic radiation using the Heavy Nuclei Experiment on the HEAO-3 satellite. Their relative abundances have been compared with the results expected from pure r-process material, pure s-process material, and solar system material, both with and without a modification due to possible first ionization potential effects. Such effects may be the result of the preferential acceleration, and hence enhancement in the cosmic rays, or those elements having low first ionization potentials. We find that our measurements are inconsistent with pure r-process material at the greater than 98% confidence level whether or not the first ionization potential adjustments are made.
In addition, we have compared our results with mixtures having varying ratios of pure r-process material to pure s-process material. We find that, if no first ionization potential effects are included,
(r/s)CRS/(r/s)SS = 0.20+0.18-0.14
where CRS refers to the cosmic ray source and SS refers to the solar system, consistent with having an almost pure s-process source. If the first ionization potential adjustments are applied
(r/s)CRS/(r/s)SS = 1.5+1.1-0.7
consistent with a solar system mixture.
Resumo:
The electron diffraction investigation of the following compounds has been carried out: sulfur, sulfur nitride, realgar, arsenic trisulfide, spiropentane, dimethyltrisulfide, cis and trans lewisite, methylal, and ethylene glycol.
The crystal structures of the following salts have been determined by x-ray diffraction: silver molybdateand hydrazinium dichloride.
Suggested revisions of the covalent radii for B, Si, P, Ge, As, Sn, Sb, and Pb have been made, and values for the covalent radii of Al, Ga, In, Ti, and Bi have been proposed.
The Schomaker-Stevenson revision of the additivity rule for single covalent bond distances has been used in conjunction with the revised radii. Agreement with experiment is in general better with the revised radii than with the former radii and additivity.
The principle of ionic bond character in addition to that present in a normal covalent bond has been applied to the observed structures of numerous molecules. It leads to a method of interpretation which is at least as consistent as the theory of multiple bond formation.
The revision of the additivity rule has been extended to double bonds. An encouraging beginning along these lines has been made, but additional experimental data are needed for clarification.
Resumo:
The lowest T = 2 states have been identified and studied in the nuclei 12C, 12B, 20F and and 28Al. The first two of these were produced in the reactions 14C(p,t)12C and 14C (p,3He)12B, at 50.5 and 63.4 MeV incident proton energy respectively, at the Oak Ridge National Laboratory. The T = 2 states in 20F and 28Al were observed in (3He,p) reactions at 12-MeV incident energy, with the Caltech Tandem accelerator.
The results for the four nuclei studied are summarized below:
(1) 12C: the lowest T = 2 state was located at an excitation energy of 27595 ± 20 keV, and has a width less than 35 keV.
(2) 12B: the lowest T = 2 state was found at an excitation energy of 12710 ± 20 keV. The width was determined to be less than 54 keV and the spin and parity were confirmed to be 0+. A second 12B state (or doublet) was observed at an excitation energy of 14860 ± 30 keV with a width (if the group corresponds to a single state) of 226 ± 30 keV.
(3) 20F: the lowest T = 2 state was observed at an excitation of 6513 ± 5 keV; the spin and parity were confirmed to be 0+. A second state, tentatively identified as T = 2 from the level spacing, was located at 8210 ± 6 keV.
(4) 28Al: the lowest T = 2 state was identified at an excitation of 5997 ± 6 keV; the spin and parity were confirmed to be 0+. A second state at an excitation energy of 7491 ± 11 keV is tentatively identified as T = 2, with a corresponding (tentative) spin and parity assignment Jπ = 2+.
The results of the present work and the other known masses of T = 2 states and nuclei for 8 ≤ A ≤ 28 are summarized, and massequation coefficients have been extracted for these multiplets. These coefficients were compared with those from T = 1 multiplets, and then used to predict the mass and stability of each of the unobserved members of the T = 2 multiplets.
Resumo:
Electronic Kαl x-ray isotope shifts have been measured for Sn 116-124, Sm 148-154, W 182-184, W 184-186, and W 182-186 using a curved crystal Cauchois spectrometer. The analysis of the measurements has included the electrostatic volume effect, screening by the transition electron as well as the non-transition electrons, normal and specific mass shifts, dynamical nuclear qudrupole polarization, and a radiative correction effect of the electron magnetic moment in the nuclear charge radii are obtained. Where other experimental data are available, the agreement with the present measurements is satisfactory. Comparisons with several nuclear model predictions yield only partial agreement.