Generic differentiability of convex functions and monotone operators

The aim of this paper is to investigate to what extent the known theory of subdifferentiability and generic differentiability of convex functions defined on open sets can be carried out in the context of convex functions defined on not necessarily open sets. Among the main results obtained I would like to mention a Kenderov type theorem (the subdifferential at a generic point is contained in a sphere), a generic Gâteaux differentiability result in Banach spaces of class S and a generic Fréchet differentiability result in Asplund spaces. At least two methods can be used to prove these results: first, a direct one, and second, a more general one, based on the theory of monotone operators. Since this last theory was previously developed essentially for monotone operators defined on open sets, it was necessary to extend it to the context of monotone operators defined on a larger class of sets, our "quasi open" sets. This is done in Chapter III. As a matter of fact, most of these results have an even more general nature and have roots in the theory of minimal usco maps, as shown in Chapter II.

Measurement of the band bending and surface dipole at chemically functionalized Si(111)/vacuum interfaces

The core-level energy shifts observed using X-ray photoelectron spectroscopy (XPS) have been used to determine the band bending at Si(111) surfaces terminated with Si-Br, Si-H, and Si-CH₃ groups, respectively. The surface termination influenced the band bending, with the Si 2p_3/2 binding energy affected more by the surface chemistry than by the dopant type. The highest binding energies were measured on Si(111)-Br (whose Fermi level was positioned near the conduction band at the surface), followed by Si(111)-H, followed by Si(111)-CH₃ (whose Fermi level was positioned near mid-gap at the surface). Si(111)-CH₃ surfaces exposed to Br₂(g) yielded the lowest binding energies, with the Fermi level positioned between mid-gap and the valence band. The Fermi level position of Br₂(g)-exposed Si(111)-CH₃ was consistent with the presence of negatively charged bromine-containing ions on such surfaces. The binding energies of all of the species detected on the surface (C, O, Br) shifted with the band bending, illustrating the importance of isolating the effects of band bending when measuring chemical shifts on semiconductor surfaces. The influence of band bending was confirmed by surface photovoltage (SPV) measurements, which showed that the core levels shifted toward their flat-band values upon illumination. Where applicable, the contribution from the X-ray source to the SPV was isolated and quantified. Work functions were measured by ultraviolet photoelectron spectroscopy (UPS), allowing for calculation of the sign and magnitude of the surface dipole in such systems. The values of the surface dipoles were in good agreement with previous measurements as well as with electronegativity considerations. The binding energies of the adventitious carbon signals were affected by band bending as well as by the surface dipole. A model of band bending in which charged surface states are located exterior to the surface dipole is consistent with the XPS and UPS behavior of the chemically functionalized Si(111) surfaces investigated herein.

Some generalizations of commutativity for linear transformations on a finite dimensional vector space

Let L be the algebra of all linear transformations on an n-dimensional vector space V over a field F and let A, B, ƐL. Let A_i+1 = A_iB - BA_i, i = 0, 1, 2,…, with A = A_o. Let f_k (A, B; σ) = A_2K+1 - ^σ1^A2K-1 ^{+ σ}2^A2K-3 -… +(-1)^Kσ_KA₁ where σ = (σ₁, σ₂,…, σ_K), σ_i belong to F and K = k(k-1)/2. Taussky and Wielandt [Proc. Amer. Math. Soc., 13(1962), 732-735] showed that f_n(A, B; σ) = 0 if σ_i is the i^th elementary symmetric function of (β₄- β_s)², 1 ≤ r ˂ s ≤ n, i = 1, 2, …, N, with N = n(n-1)/2, where β₄ are the characteristic roots of B. In this thesis we discuss relations involving f_k(X, Y; σ) where X, Y Ɛ L and 1 ≤ k ˂ n. We show: 1. If F is infinite and if for each X Ɛ L there exists σ so that f_k(A, X; σ) = 0 where 1 ≤ k ˂ n, then A is a scalar transformation. 2. If F is algebraically closed, a necessary and sufficient condition that there exists a basis of V with respect to which the matrices of A and B are both in block upper triangular form, where the blocks on the diagonals are either one- or two-dimensional, is that certain products X₁, X₂…X_r belong to the radical of the algebra generated by A and B over F, where X_i has the form f₂(A, P(A,B); σ), for all polynomials P(x, y). We partially generalize this to the case where the blocks have dimensions ≤ k. 3. If A and B generate L, if the characteristic of F does not divide n and if there exists σ so that f_k(A, B; σ) = 0, for some k with 1 ≤ k ˂ n, then the characteristic roots of B belong to the splitting field of g_k(w; σ) = w^2K+1 - σ₁w^2K-1 + σ₂w^2K-3 - …. +(-1)^K σ_Kw over F. We use this result to prove a theorem involving a generalized form of property L [cf. Motzkin and Taussky, Trans. Amer. Math. Soc., 73(1952), 108-114]. 4. Also we give mild generalizations of results of McCoy [Amer. Math. Soc. Bull., 42(1936), 592-600] and Drazin [Proc. London Math. Soc., 1(1951), 222-231].

Matrices whose hermitian part is positive definite

We are concerned with the class ∏_n of nxn complex matrices A for which the Hermitian part H(A) = A+A*/2 is positive definite.

Various connections are established with other classes such as the stable, D-stable and dominant diagonal matrices. For instance it is proved that if there exist positive diagonal matrices D, E such that DAE is either row dominant or column dominant and has positive diagonal entries, then there is a positive diagonal F such that FA ϵ ∏_n.

Powers are investigated and it is found that the only matrices A for which A^m ϵ ∏_n for all integers m are the Hermitian elements of ∏_n. Products and sums are considered and criteria are developed for AB to be in ∏_n.

Since ∏_n n is closed under inversion, relations between H(A)^-1 and H(A^-1) are studied and a dichotomy observed between the real and complex cases. In the real case more can be said and the initial result is that for A ϵ ∏_n, the difference H(adjA) - adjH(A) ≥ 0 always and is ˃ 0 if and only if S(A) = A-A*/2 has more than one pair of conjugate non-zero characteristic roots. This is refined to characterize real c for which cH(A^-1) - H(A)^-1 is positive definite.

The cramped (characteristic roots on an arc of less than 180°) unitary matrices are linked to ∏_n and characterized in several ways via products of the form A ^-1A*.

Classical inequalities for Hermitian positive definite matrices are studied in ∏_n and for Hadamard's inequality two types of generalizations are given. In the first a large subclass of ∏_n in which the precise statement of Hadamardis inequality holds is isolated while in another large subclass its reverse is shown to hold. In the second Hadamard's inequality is weakened in such a way that it holds throughout ∏_n. Both approaches contain the original Hadamard inequality as a special case.