5 resultados para (0,1)-Matrices

em CaltechTHESIS


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We consider the following singularly perturbed linear two-point boundary-value problem:

Ly(x) ≡ Ω(ε)D_xy(x) - A(x,ε)y(x) = f(x,ε) 0≤x≤1 (1a)

By ≡ L(ε)y(0) + R(ε)y(1) = g(ε) ε → 0^+ (1b)

Here Ω(ε) is a diagonal matrix whose first m diagonal elements are 1 and last m elements are ε. Aside from reasonable continuity conditions placed on A, L, R, f, g, we assume the lower right mxm principle submatrix of A has no eigenvalues whose real part is zero. Under these assumptions a constructive technique is used to derive sufficient conditions for the existence of a unique solution of (1). These sufficient conditions are used to define when (1) is a regular problem. It is then shown that as ε → 0^+ the solution of a regular problem exists and converges on every closed subinterval of (0,1) to a solution of the reduced problem. The reduced problem consists of the differential equation obtained by formally setting ε equal to zero in (1a) and initial conditions obtained from the boundary conditions (1b). Several examples of regular problems are also considered.

A similar technique is used to derive the properties of the solution of a particular difference scheme used to approximate (1). Under restrictions on the boundary conditions (1b) it is shown that for the stepsize much larger than ε the solution of the difference scheme, when applied to a regular problem, accurately represents the solution of the reduced problem.

Furthermore, the existence of a similarity transformation which block diagonalizes a matrix is presented as well as exponential bounds on certain fundamental solution matrices associated with the problem (1).

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The purpose of this thesis is to present new observations of thermal-infrared radiation from asteroids. Stellar photometry was performed to provide standards for comparison with the asteroid data. The details of the photometry and the data reduction are discussed in Part 1. A system of standard stars is derived for wavelengths of 8.5, 10.5 and 11.6 µm and a new calibration is adopted. Sources of error are evaluated and comparisons are made with the data of other observers.

The observations and analysis of the thermal-emission observations of asteroids are presented in Part 2. Thermal-emission lightcurve and phase effect data are considered. Special color diagrams are introduced to display the observational data. These diagrams are free of any model-dependent assumptions and show that asteroids differ in their surface properties.

On the basis of photometric models, (4) Vesta is thought to have a bolometric Bond albedo of about 0.1, an emissivity greater than 0.7 and a true radius that is close to the model value of 300^(+50)_(-30)km. Model albedos and model radii are given for asteroids 1, 2, 4, 5, 6, 7, 15, 19, 20, 27, 39, 44, 68, 80, 324 and 674. The asteroid (324) Bamberga is extremely dark with a model (~bolometric Bond) albedo in the 0.01 - 0.02 range, which is thought to be the lowest albedo yet measured for any solar-system body. The crucial question about such low-albedo asteroids is their number and the distribution of their orbits.

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I. HgSe is deposited on various semiconductors, forming a semimetal/semiconductor "Schottky barrier" structure. Polycrystalline, evaporated HgSe produces larger Schottky barrier heights on n-type semiconductors than does Au, the most electronegative of the elemental metals. The barrier heights are about 0.5 eV greater than those of Au on ionic semiconductors such as ZnS, and 0.1 to 0.2 eV greater for more covalently bonded semiconductors. A novel structure,which is both a lattice matched heterostructure and a Schottky barrier, is fabricated by epitaxial growth of HgSe on CdSe using hydrogen transport CVD. The Schottky barrier height for this structure is 0.73 ± 0.02 eV, as measured by the photoresponse method. This uncertainty is unusually small; and the magnitude is greater by about a quarter volt than is achievable with Au, in qualitative agreement with ionization potential arguments.

II . The Schottky barrier height of Au on chemically etched n-Ga1-x AlxAs was measured as a function of x. As x increases, the barrier height rises to a value of about 1.2 eV at x ≈ 0.45 , then decreases to about 1.0 eV as x approaches 0.83. The barrier height deviates in a linear way from the value predicted by the "common anion" rule as the AlAs mole fraction increases. This behavior is related to chemical reactivity of the Ga1-x AlxAs surface.

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̄pp backward elastic scattering has been measured for the cos θcm region between – 1.00 and – 0.88 and for the incident ̄p laboratory momentum region between 0.70 and 2.37 GeV/c. These measurements, done in intervals of approximately 0.1 GeV/c, have been performed at the Alternating Gradient Synchrotron at Brookhaven National Laboratory during the winter of 1968. The measured differential cross sections, binned in cos θcm intervals of 0.02, have statistical errors of about 10%. Backward dipping exists below 0.95 GeV/c and backward peaking above 0.95 GeV/c. The 180˚ differential cross section extrapolated from our data shows a sharp dip centered at 0.95 GeV/c and a broad hump centered near 1.4 GeV/c. Our data have been interpreted in terms of resonance effects and in terms of diffraction dominance effects.

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Let L be the algebra of all linear transformations on an n-dimensional vector space V over a field F and let A, B, ƐL. Let Ai+1 = AiB - BAi, i = 0, 1, 2,…, with A = Ao. Let fk (A, B; σ) = A2K+1 - σ1A2K-1 + σ2A2K-3 -… +(-1)KσKA1 where σ = (σ1, σ2,…, σK), σi belong to F and K = k(k-1)/2. Taussky and Wielandt [Proc. Amer. Math. Soc., 13(1962), 732-735] showed that fn(A, B; σ) = 0 if σi is the ith elementary symmetric function of (β4- βs)2, 1 ≤ r ˂ s ≤ n, i = 1, 2, …, N, with N = n(n-1)/2, where β4 are the characteristic roots of B. In this thesis we discuss relations involving fk(X, Y; σ) where X, Y Ɛ L and 1 ≤ k ˂ n. We show: 1. If F is infinite and if for each X Ɛ L there exists σ so that fk(A, X; σ) = 0 where 1 ≤ k ˂ n, then A is a scalar transformation. 2. If F is algebraically closed, a necessary and sufficient condition that there exists a basis of V with respect to which the matrices of A and B are both in block upper triangular form, where the blocks on the diagonals are either one- or two-dimensional, is that certain products X1, X2…Xr belong to the radical of the algebra generated by A and B over F, where Xi has the form f2(A, P(A,B); σ), for all polynomials P(x, y). We partially generalize this to the case where the blocks have dimensions ≤ k. 3. If A and B generate L, if the characteristic of F does not divide n and if there exists σ so that fk(A, B; σ) = 0, for some k with 1 ≤ k ˂ n, then the characteristic roots of B belong to the splitting field of gk(w; σ) = w2K+1 - σ1w2K-1 + σ2w2K-3 - …. +(-1)K σKw over F. We use this result to prove a theorem involving a generalized form of property L [cf. Motzkin and Taussky, Trans. Amer. Math. Soc., 73(1952), 108-114]. 4. Also we give mild generalizations of results of McCoy [Amer. Math. Soc. Bull., 42(1936), 592-600] and Drazin [Proc. London Math. Soc., 1(1951), 222-231].