Circuital model for the spherical geodesic waveguide perfect drain

The perfect drain for the Maxwell fish eye (MFE) is a non-magnetic dissipative region placed in the focal point to absorb all the incident radiation without reflection or scattering.

Super-resolution properties of the Spherical Geodesic Waveguides using the perfect drain

Perfect drain for the Maxwell Fish Eye (MFE) is a nonmagnetic dissipative region placed in the focal point to absorb all the incident radiation without reflection or scattering. The perfect drain was recently designed as a material with complex permittivity ? that depends on frequency. However, this material is only a theoretical material, so it can not be used in practical devices. Recently, the perfect drain has been claimed as necessary to achieve super-resolution [Leonhard 2009, New J. Phys. 11 093040], which has increased the interest for practical perfect drains suitable for manufacturing. Here, we analyze the superresolution properties of a device equivalent to the MFE, known as Spherical Geodesic Waveguide (SGW), loaded with the perfect drain. In the SGW the source and drain are implemented with coaxial probes. The perfect drain is realized using a circuit (made of a resistance and a capacitor) connected to the drain coaxial probes. Superresolution analysis for this device is done in Comsol Multiphysics. The results of simulations predict the superresolution up to ? /3000 and optimum power transmission from the source to the drain.

Amplificador de potencia clase F a 1.64 ghz con control de armónicos

This paper presents a high-power high efficiency PA design method using load pull technique. Harmonic impedance control at the virtual drain is accomplished through the use of tunable pre-matching circuits and modeling of package parasitics. A 0.5 µm GaN high electron mobility transistor (HEMT) is characterized using the method, and loadpull measurements are simulated illustrating the impact of varying 2nd and 3rd harmonic termination. These harmonic terminations are added to satisfy conditions for class-F load pull. The method is verified by design and simulation of a 40-W class-F PA prototype at 1.64 GHz with 76% drain efficiency and 10 dB gain (70% PAE).

Improved GaN-based HEMT performance by nanocrystalline diamond capping

As a wide-bandgap semiconductor, gallium nitride (GaN) is an attractive material for next-generation power devices. To date, the capabilities of GaN-based high electron mobility transistors (HEMTs) have been limited by self-heating effects (drain current decreases due to phonon scattering-induced carrier velocity reductions at high drain fields). Despite awareness of this, attempts to mitigate thermal impairment have been limited due to the difficulties involved with placing high thermal conductivity materials close to heat sources in the device. Heat spreading schemes have involved growth of AIGaN/GaN on single crystal or CVD diamond, or capping of fullyprocessed HEMTs using nanocrystalline diamond (NCD). All approaches have suffered from reduced HEMT performance or limited substrate size. Recently, a "gate after diamond" approach has been successfully demonstrated to improve the thermal budget of the process by depositing NCD before the thermally sensitive Schottky gate and also to enable large-area diamond implementation.

Amplificador de potencia Clase F en banda L basado en tecnología GaN

This paper reports a high efficiency class-F power amplifier based on a gallium nitride high electron mobility transistor (GaN-HEMT), which is designed at the L band of 1640 MHz. The design is based on source and load pull measurements. During the design process, the parasitics of the package of the device are also taken into account in order to achieve the optimal class-F load condition at the intrinsic drain of the transistor. The fabricated class-F power amplifier achieved a maximum drain efficiency (DE) of 77.8% and a output power of 39.6 W on a bandwidth of 280 MHz. Simulation and measurement results have shown good agreement.

Políticas de esfuerzo combinado económico-laboral en la retención y atracción del conocimiento científico: un estudio del caso español

El objetivo de este trabajo es la aportación de un caso que evidencie la importancia de realizar esfuerzos tanto en el terreno económico como en el laboral para conseguir una adecuada retención y atracción del conocimiento científico. Para ello, se analizan los datos de un estudio que destaca estas cuestiones para un país como España, que necesita urgentemente mejorar su balance de movilidad investigadora. Los resultados confirman la importancia de la aplicación de estas medidas y las debilidades que presenta en este tipo de políticas el sistema nacional de investigación, desarrollo e innovación (I+D+i). Abstract: The goal of this paper is to disclose a case study which highlights the impor tance of realising effor ts at an economic and labour scale in order to reach an adequate retention and attraction of scientific knowledge. Although science has evolved during different periods through the flow of mankind and ideas, studies about international mobility of scientists are recent in time. It started mid XXth century with the brain drain phenomenon. To alleviate the loss of scientists, countries have disclosed different politics. Some countries like Singapore, Southern Korea, India and China have been successful in bringing scientists back home. Those countries have made huge effor ts in human resources investments and scientific infrastructures, so as to enforce their national R&D&I systems. Despite such experiences and despite the increasement in terms of evidences related with international scientific mobility, few studies and figures have been disclosed. The goal of this current work is to disclose data, which backs up the liability of such kind of politics that combine effor ts in economic and labour terms. For that reason, data has been analyzed from a study which highlights these key aspects for a country like Spain and which recently established a wide range of politics in order to attract scientists. Despite the increasement of financial resources, such politics have turned out unable to reach a proper balance in terms of mobility research. Such data as well as it analysis comes from the development of an annual survey to Spanish scientists during the period 2008- 2011. Based on sample data and analysis an expectations index for the coming year has been constructed. This compares the level of confidence which related the support and prestige of their national R&D&I systems in which they operate. Two groups where surveyed: young researchers which currently work in Spain and as a group are more likely to go working abroad and Spanish scientists who are currently working abroad. Samples were obtained for young researchers were the following: 2008 (217), 2009 (270), 2010 (390) and 2011 (610). In the case of Spanish scientists abroad, the following data were obtained: 2008 (218), 2009 (250), 2010 (241) and 2011 (167). Both groups assume simple random sampling, with a level of confidence of 95%. The results obtained confirm the importance of this combined effor t of labor and economic policies which presents weaknesses of Spanish national R&D&I systems and its application, so that Spain becomes a pole of excellence in terms of attraction and retention of scientific knowledge.

Analysis of Super Imaging Properties of Spherical Geodesic Waveguide Using COMSOL Multyphisics

Negative Refractive Lens (NRL) has shown that an optical system can produce images with details below the classic Abbe diffraction limit using materials of negative dielectric and magnetic constants. Recently, two devices with positive refraction, the Maxwell Fish Eye lens (MFE) (Leonhardt et al 2000) and the Spherical Geodesic Waveguide (SGW)(Minano et all 2011) have been claimed to break the diffraction limit using positive refraction with a different meaning. In these cases, it has been considered the power transmission from a point source to a point receptor, which falls drastically when the receptor is displaced from the focus by a distance much smaller than the wavelength. Moreover, recent analysis of the SGW with defined object and image surfaces, which are both conical sections of the sphere, has shown that the system transmits images bellow diffraction limit. The key assumption is the use of a perfectly absorbing receptor called perfect drain. This receptor is capable to absorb all the radiation without reflection or scattering. Here, it is presented the COMSOL analysis of the SGW using a perfect drain that absorbs perfectly two modes. The design procedure for PD capable to absorb k modes is proposed, as well.

Super-resolution for a point source using positive refraction

Leonhardt demonstrated (2009) that the 2D Maxwell Fish Eye lens (MFE) can focus perfectly 2D Helmholtz waves of arbitrary frequency, i.e., it can transport perfectly an outward (monopole) 2D Helmholtz wave field, generated by a point source, towards a receptor called "perfect drain" (PD) located at the corresponding MFE image point. The PD has the property of absorbing the complete radiation without radiation or scattering and it has been claimed as necessary to obtain super-resolution (SR) in the MFE. However, a prototype using a "drain" different from the PD has shown λ/5 resolution for microwave frequencies (Ma et al, 2010). Recently, the SR properties of a device equivalent to the MFE, called the Spherical Geodesic Waveguide (SGW) (Miñano et al, 2012) have been analyzed. The reported results show resolution up to λ /3000, for the SGW loaded with the perfect drain, and up to λ /500 f for the SGW without perfect drain. The perfect drain was realized as a coaxial probe loaded with properly calculated impedance. The SGW provides SR only in a narrow band of frequencies close to the resonance Schumann frequencies. Here we analyze the SGW loaded with a small "perfect drain region" (González et al, 2011). This drain is designed as a region made of a material with complex permittivity. The comparative results show that there is no significant difference in the SR properties for both perfect drain designs.

Perfect imaging analysis of the spherical geodesic waveguide

Negative Refractive Lens (NRL) has shown that an optical system can produce images with details below the classic Abbe diffraction limit. This optical system transmits the electromagnetic fields, emitted by an object plane, towards an image plane producing the same field distribution in both planes. In particular, a Dirac delta electric field in the object plane is focused without diffraction limit to the Dirac delta electric field in the image plane. Two devices with positive refraction, the Maxwell Fish Eye lens (MFE) and the Spherical Geodesic Waveguide (SGW) have been claimed to break the diffraction limit using positive refraction with a different meaning. In these cases, it has been considered the power transmission from a point source to a point receptor, which falls drastically when the receptor is displaced from the focus by a distance much smaller than the wavelength. Although these systems can detect displacements up to ?/3000, they cannot be compared to the NRL, since the concept of image is different. The SGW deals only with point source and drain, while in the case of the NRL, there is an object and an image surface. Here, it is presented an analysis of the SGW with defined object and image surfaces (both are conical surfaces), similarly as in the case of the NRL. The results show that a Dirac delta electric field on the object surface produces an image below the diffraction limit on the image surface.

Perfect imaging of point sources with positive refraction

The capability of a device called the Spherical Geodesic Waveguide (SGW) to produce images with details below the classic Abbe diffraction limit (super-resolution) is analyzed here. The SGW is an optical system equivalent (by means of Transformation Optics) to the Maxwell Fish Eye (MFE) refractive index distribution. Recently, it has been claimed that the necessary condition to get super-resolution in the MFE and the SGW is the use of a Perfect Point Drain (PPD). The PPD is a punctual receptor placed in the focal point that absorbs the incident wave, without reflection or scattering. A microwave circuit comprising three elements, the SGW, the source and the drain (two coaxial lines loaded with specific impedances) is designed and simulated in COMSOL. The super-resolution properties have been analyzed for different position of the source and drain and for two different load impedances: the PPD and the characteristic line impedance. The results show that in both cases super-resolution occurs only for discrete number of frequencies. Out of these frequencies, the SGW does not show SR in the analysis carried out.

Extreme super-resolution using the spherical geodesic waveguide

Leonhardt demonstrated (2009) that the 2D Maxwell Fish Eye lens (MFE) can focus perfectly 2D Helmholtz waves of arbitrary frequency, i.e., it can transport perfectly an outward (monopole) 2D Helmholtz wave field, generated by a point source, towards a "perfect point drain" located at the corresponding image point. Moreover, a prototype with λ/5 superresolution (SR) property for one microwave frequency has been manufactured and tested (Ma et al, 2010). Although this prototype has been loaded with an impedance different from the "perfect point drain", it has shown super-resolution property. However, neither software simulations nor experimental measurements for a broad band of frequencies have yet been reported. Here we present steady state simulations for two cases, using perfect drain as suggested by Leonhardt and without perfect drain as in the prototype. All the simulations have been done using a device equivalent to the MFE, called the Spherical Geodesic Waveguide (SGW). The results show the super-resolution up to λ/3000, for the system loaded with the perfect drain, and up to λ/500 for a not perfect load. In both cases super-resolution only happens for discrete number of frequencies. Out of these frequencies, the SGW does not show super-resolution in the analysis carried out.

Impact of N2 plasma power discharge on AlGaN/GaN HEMT performance

The effects of power and time conditions of in situ N2 plasma treatment, prior to silicon nitride (SiN) passivation, were investigated on an AlGaN/GaN high-electron mobility transistor (HEMT). These studies reveal that N2 plasma power is a critical parameter to control the SiN/AlGaN interface quality, which directly affects the 2-D electron gas density. Significant enhancement in the HEMT characteristics was observed by using a low power N2 plasma pretreatment. In contrast, a marked gradual reduction in the maximum drain-source current density (IDS max) and maximum transconductance (gm max), as well as in fT and fmax, was observed as the N2 plasma power increases (up to 40% decrease for 210 W). Different mechanisms were proposed to be dominant as a function of the discharge power range. A good correlation was observed between the device electrical characteristics and the surface assessment by atomic force microscopy and Kelvin force microscopy techniques.

Investigation of AlInN barrier ISFET structures with GaN capping for pH detection

In the last decade the interest in nitride-based sensors (gas, ions...) and bio-sensors is increased. In the case of ion sensitive FET (ISFET), gate voltages induced by ions adsorbed onto the gate region modulate the source-drain currents.

Receptores homodinos a 300 GHz basados en tecnología CMOS

Using CMOS transistors for terahertz detection is currently a disruptive technology that offers the direct integration of a terahertz detector with video preamplifiers. The detectors are based on the resistive mixer concept and its performance mainly depends on the following parameters: type of antenna, electrical parameters (gate to drain capacitor and channel length of the CMOS device) and foundry. Two different 300 GHz detectors are discussed: a single transistor detector with a broadband antenna and a differential pair driven by a resonant patch antenna.

300 GHz CMOS video detection using broadband and active planar antennas

Using CMOS transistors for terahertz detection is currently a disruptive technology that offers the direct integration of a terahertz detector with video preamplifiers. The detectors are based on the resistive mixer concept and performance mainly depends on the following parameters: type of antenna, electrical parameters (gate to drain capacitor and channel length of the CMOS device) and foundry. Two different 300 GHz detectors are discussed: a single transistor detector with a broadband antenna and a differential pair driven by a resonant patch antenna.