Integration of III-V materials on Silicon Substrates for Multi-junction Solar Cell Applications

The work presented here aims to reduce the cost of multijunction solar cell technology by developing ways to manufacture them on cheap substrates such as silicon. In particular, our main objective is the growth of III-V semiconductors on silicon substrates for photovoltaic applications. The goal is to create a GaAsP/Si virtual substrates onto which other III-V cells could be integrated with an interesting efficiency potential. This technology involves several challenges due to the difficulty of growing III-V materials on silicon. In this paper, our first work done aimed at developing such structure is presented. It was focused on the development of phosphorus diffusion models on silicon and on the preparation of an optimal silicon surface to grow on it III-V materials.

Influence of PH3 exposure on silicon substrate morphology in the MOVPE growth of III-V on silicon multijunction solar cells

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. One of the first issues to be considered in the development of this structure will be the strategy to create the silicon emitter of the bottom subcell. In this study, we explore the possibility of forming the silicon emitter by phosphorus diffusion (i.e. exposing the wafer to PH3 in a MOVPE reactor) and still obtain good surface morphologies to achieve a successful III-V heteroepitaxy as occurs in conventional III-V on germanium solar cell technology. Consequently, we explore the parameter space (PH3 partial pressure, time and temperature) that is needed to create optimized emitter designs and assess the impact of such treatments on surface morphology using atomic force microscopy. Although a strong degradation of surface morphology caused by prolonged exposure of silicon to PH3 is corroborated, it is also shown that subsequent anneals under H-2 can recover silicon surface morphology and minimize its RMS roughness and the presence of pits and spikes.

Laser Processes for Contact Optimization in c-Si Solar Cells

Solid State Lasers (SSL) have been used in microelectronic and photovoltaic (PV) industry for decades but, currently, laser technology appears as a key enabling technology to improve efficiency and to reduce production costs in high efficiency solar cells fabrication. Moreover, the fact that the interaction between the laser radiation and the device is normally localized and restricted to a controlled volume makes SSL a tool of choice for the implementation of low temperature concepts in PV industry. Specifically, SSL are ideally suited to improve the electrical performance of the contacts further improving the efficiency of these devices. Advanced concepts based on standard laser firing or advanced laser doping techniques are optimal solutions for the back contact of a significant number of structures of growing interest in the c-Si PV industry, and a number of solutions has been proposed as well for emitter formation, to reduce the metallization optical losses or even to remove completely the contacts from the front part of the cell. In this work we present our more recent results of SSL applications for contact optimization in c-Si solar cell technology, including applications on low temperature processes demanding devices, like heterojunction solar cells.

Photovoltaic application of O-doped Wittichenite-Cu 3 BiS 3: from microscopic properties to maximum efficiencies

The electronic properties and the low environmental impact of Cu 3 BiS 3 make this compound a promising material for low-cost thin film solar cell technology. From the first principles, the electronic properties of the isoelectronic substitution of S by O in Cu 3 BiS 3 have been obtained using two different exchange-correlation potentials. This compound has an acceptor level below the conduction band, which modifies the opto-electronic properties with respect to the host semiconductor. In order to analyze a possible efficiency increment with respect to the host semiconductor, we have calculated the maximum efficiency of this photovoltaic absorber material.

Fracture strength of drilled wafers: study of the stress concentration factor and determination of the weibull distribution of the fracture stress

In the photovoltaic field, the back contact solar cells technology has appeared as an alternative to the traditional silicon modules. This new type of cells places both positive and negative contacts on the back side of the cells maximizing the exposed surface to the light and making easier the interconnection of the cells in the module. The Emitter Wrap-Through solar cell structure presents thousands of tiny holes to wrap the emitter from the front surface to the rear surface. These holes are made in a first step over the silicon wafers by means of a laser drilling process. This step is quite harmful from a mechanical point of view since holes act as stress concentrators leading to a reduction in the strength of these wafers. This paper presents the results of the strength characterization of drilled wafers. The study is carried out testing the samples with the ring on ring device. Finite Element models are developed to simulate the tests. The stress concentration factor of the drilled wafers under this load conditions is determined from the FE analysis. Moreover, the material strength is characterized fitting the fracture stress of the samples to a three-parameter Weibull cumulative distribution function. The parameters obtained are compared with the ones obtained in the analysis of a set of samples without holes to validate the method employed for the study of the strength of silicon drilled wafers.

Cu(In,Ga)Se2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics

Thinning the absorber layer is one of the possibilities envisaged to further decrease the production costs of Cu(In,Ga)Se2 (CIGSe) thin films solar cell technology. In the present study, the electronic transport in submicron CIGSe-based devices has been investigated and compared to that of standard devices. It is observed that when the absorber is around 0.5 μm-thick, tunnelling enhanced interface recombination dominates, which harms cells energy conversion efficiency. It is also shown that by varying either the properties of the Mo back contact or the characteristics of 3-stage growth processing, one can shift the dominating recombination mechanism from interface to space charge region and thereby improve the cells efficiency. Discussions on these experimental facts led to the conclusions that 3-stage process implies the formation of a CIGSe/CIGSe homo-interface, whose location as well as properties rule the device operation; its influence is enhanced in submicron CIGSe based solar cells.

Nanosatellites costelation mission: ODEI-C24

Our mission consists in 4 key objectives: Quantify the number of sunspots during the solar maximum, and also characterize their activity and magnetism. Demonstrate the reliability of a mission in LEO orbit, for an effective solar observation. Technology demonstrator: we will take on board an experiment: the PTF (Polymer Filter test in flight ), associated with visible cameras. Investigation of the potential for exploitation of ground space market through the sale of images taken in flight.

Determination of spectral variations by means of component cells useful for CPV rating and design

A methodology is presented to determine both the short-term and the long-term influence of the spectral variations on the performance of Multi-Junction (MJ) solar cells and Concentrating "This is the peer reviewed version of the following article: R. Núñez, C. Domínguez, S. Askins, M. Victoria, R. Herrero, I. Antón, and G. Sala, “Determination of spectral variations by means of component cells useful for CPV rating and design,” Prog. Photovolt: Res. Appl., 2015., which has been published in final form at http://onlinelibrary.wiley.com/doi/10.1002/pip.2715/full. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving [http://olabout.wiley.com/WileyCDA/Section/id-820227.html#terms]." Photovoltaic (CPV) modules. Component cells with the same optical behavior as MJ solar cells are used to characterize the spectrum. A set of parameters, namely Spectral Matching Ratios (SMRs), is used to characterize spectrally a particular Direct Normal Irradiance (DNI) by comparison to the reference spectrum (AM1.5D-ASTM-G173-03). Furthermore, the spectrally corrected DNI for a given MJ solar cell technology is defined providing a way to estimate the losses associated to the spectral variations. The last section analyzes how the spectrum evolves throughout a year in a given place and the set of SMRs representative for that location are calculated. This information can be used to maximize the energy harvested by the MJ solar cell throughout the year. As an example, three years of data recorded in Madrid shows that losses lower than 5% are expected due to current mismatch for state-of-the-art MJ solar cells.

Inorganic Photovoltaics - Planar and Nanostructured Devices

Since its invention in the 1950s, semiconductor solar cell technology has evolved in great leaps and bounds. Solar power is now being considered as a serious leading contender for replacing fossil fuel based power generation. This article reviews the evolution and current state, and potential areas of near future research focus, of leading inorganic materials based solar cells, including bulk crystalline, amorphous thin-films, and nanomaterials based solar cells. Bulk crystalline silicon solar cells continue to dominate the solar power market, and continued efforts at device fabrication improvements, and device topology advancements are discussed. III-V compound semiconductor materials on c-Si for solar power generation are also reviewed. Developments in thin-film based solar cells are reviewed, with a focus on amorphous silicon, copper zinc tin sulfide, cadmium telluride, as well as nanostructured Cadmium telluride. Recent developments in the use of nano-materials for solar power generation, including silicon and gallium arsenide nanowires, are also reviewed.

A numerical study of Bi-periodic binary diffraction gratings for solar cell applications

In this paper, a numerical study is made of simple bi-periodic binary diffraction gratings for solar cell applications. The gratings consist of hexagonal arrays of elliptical towers and wells etched directly into the solar cell substrate. The gratings are applied to two distinct solar cell technologies: a quantum dot intermediate band solar cell (QD-IBSC) and a crystalline silicon solar cell (SSC). In each case, the expected photocurrent increase due to the presence of the grating is calculated assuming AM1.5D illumination. For each technology, the grating period, well/tower depth and well/tower radii are optimised to maximise the photocurrent. The optimum parameters are presented. Results are presented for QD-IBSCs with a range of quantum dot layers and for SSCs with a range of thicknesses. For the QD-IBSC, it is found that the optimised grating leads to an absorption enhancement above that calculated for an ideally Lambertian scatterer for cells with less than 70 quantum dot layers. In a QD-IBSC with 50 quantum dot layers equipped with the optimum grating, the weak intermediate band to conduction band transition absorbs roughly half the photons in the corresponding sub-range of the AM1.5D spectrum. For the SSC, it is found that the optimised grating leads to an absorption enhancement above that calculated for an ideally Lambertian scatterer for cells with thicknesses of 10 ?m or greater. A 20um thick SSC equipped with the optimised grating leads to an absorption enhancement above that of a 200um thick SSC equipped with a planar back reflector.

Optimization of the silicon subcell for III-V on silicon multijunction solar cells: key differences with conventional silicon technology

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

Field analysis of solar PV-based collective systems for rural electrification.

This article analyses the long-term performance of collective off-grid photovoltaic (PV) systems in rural areas. The use of collective PV systems for the electrification of small medium-size villages in developing countries has increased in the recent years. They are basically set up as stand-alone installations (diesel hybrid or pure PV) with no connection with other electrical grids. Their particular conditions (isolated) and usual installation places (far from commercial/industrial centers) require an autonomous and reliable technology. Different but related factors affect their performance and the energy supply; some of them are strictly technical but others depend on external issues like the solar energy resource and users’ energy and power consumption. The work presented is based on field operation of twelve collective PV installations supplying the electricity to off-grid villages located in the province of Jujuy, Argentina. Five of them have PV generators as unique power source while other seven include the support of diesel groups. Load demand evolution, energy productivity and fuel consumption are analyzed. Besides, energy generation strategies (PV/diesel) are also discussed.

Optimizing Bottom Subcells for III-V-on-Si MultiJunction Solar Cells

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. Such integration would offer a cost breakthrough for photovoltaic technology, unifying the low cost of silicon and the efficiency potential of III-V multijunction solar cells. In this study, we analyze several factors influencing the performance of the bottom subcell of this dual-junction, namely, 1) the formation of the emitter as a result of the phosphorus diffusion that takes place during the prenucleation temperature ramp and during the growth of the III-V layers; 2) the degradation in surface morphology during diffusion; and 3) the quality needed for the passivation provided by the GaP layer on the emitter.

R&D on crystalline silicon technology: From metallurgical silicon to the PV module

Founded by Antonio Luque in 1979 Personnel: Personnel: 6464 full full-time time staff (19 professors staff (19 professors, 44 PhD PhD researchers 28 PhD students 13 researchers, 28 PhD students, 13 administrative and maintenance staff), 19 “part time” (11 “external PhD students”, 8 master students) Objective: Objective: Contribute to the deployment of Photovoltaic Solar Electricity through R&D& Contribute to the deployment of Photovoltaic Solar Electricity through R&D&i

The Ciborium or Lantern Tower of Valencia Cathedral: Geometry, Construction and Stability

Early 18th century treatise writer Tomas Vicente Tosca1 includes in his Tratado de la montea y cortes de Canteria [On Masonry Design and Stone Cutting], what is an important documentary source about the lantern of Valencia Cathedral. Tosca writes about this lantern as an example of vaulting over cross arches without the need of buttresses. A geometrical description is followed by an explanation of the structural behavior which manifests his deep understanding of the mechanics of masonry structures. He tries to demonstrate the absence of buttresses supporting his thesis on the appropriate distribution of loads which will reduce the "empujos" [horizontal thrusts] to the point of not requiring more than the thickness of the walls to stand (Tosca [1727] 1992, 227-230). The present article2 assesses T osca' s appreciation studying how loads and the thrusts they generate are transmitted through the different masonry elements that constitute this ciborium. In order to do so, we first present a geometrical analysis and make considerations regarding its materials and construction methods to, subsequently, analyze its stability adopting an equilibrium approach within the theoretical framework of the lower bound limit analysis.