InN/GaN heterojunction electrical behavior

Indium nitride (InN) has been the subject of intense research in recent years. Some of its most attractive features are its excellent transport properties such as its small band edge electron effective mass, high electron mobilities and peak drift velocities, and high frequency transient drift velocity oscillations [1]. These suggest enormous potential applications for InN in high frequency electronic devices. But to date the high unintentional bulk electron concentration (n~1018 cm-3) of undoped InN samples and the surface electron accumulation layer make it a hard task to create a reliable metalsemiconductor Schottky barrier. Some attempts have been made to overcome this problem by means of material oxidation [2] or deposition of insulators [3]. In this work we present a way to obtain an electrical rectification behaviour by means of heterojunction growth. Due to the big band gap differences among nitride semiconductors, it’s possible to create a structure with high band offsets. In InN/GaN heterojunctions, depending on the GaN doping, the magnitude of conduction and valence band offset are critical parameters which allow distinguishing among different electrical behaviours. The earliest estimate of the valence band offset at an InN–GaN heterojunction in a wurtzite structure was measured to be ~0.85 eV [4], while the Schottky barrier heights were determined to be ~ 1,4 eV [5].We grew In-face InN layer with varying thickness (between 150 nm and 1 mm) by plasma assisted molecular beam epitaxy (PA-MBE) on GaNntemplates (GaN/Al2O3), with temperatures ranging between 300°C and 450°C. The different doping in GaN template (Si doping, Fe doping and Mg doping) results in differences in band alignments of the two semiconductors changing electrical barriers for carriers and consequently electrical conduction behaviour. The processing of the devices includes metallization of the ohmic contacts on InN and GaN, for which we used Ti/Al/Ni/Au. Whereas an ohmic contact on InN is straightforward, the main issue was the fabrication of the contact on GaN due to the very low decomposition temperature of InN. A standard ohmic contact on GaN is generally obtained by high temperature rapid thermal annealing (RTA), typically done between 500ºC and 900ºC[6]. In this case, the limitation due to the presence of In-face InN imposes an upper limit on the temperature for the thermal annealing process and ohmic contact formation of about 450°C. We will present results on the morphology of the InN layers by X-Ray diffraction and SEM, and electrical measurements, in particular current-voltage and capacitance-voltage characteristics.

Investigation of the Epitaxial Graphene/p-SiC Heterojunction

There has been significant research in the study of in-plane charge-carrier transport in graphene in order to understand and exploit its unique electrical properties; however, the vertical graphene–semiconductor system also presents opportunities for unique devices. In this letter, we investigate the epitaxial graphene/p-type 4H-SiC system to better understand this vertical heterojunction. The I–V behavior does not demonstrate thermionic emission properties that are indicative of a Schottky barrier but rather demonstrates characteristics of a semiconductor heterojunction. This is confirmed by the fitting of the temperature-dependent I–V curves to classical heterojunction equations and the observation of band-edge electroluminescence in SiC.

Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures

In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface.

Fotodiodos basados en (Zn,Mg)O para la detección de luz ultravioleta

La presente tesis fue ideada con el objetivo principal de fabricar y caracterizar fotodiodos Schottky en capas de ZnMgO y en estructuras de pozo cuántico ZnMgO/ZnO para la detección de luz UV. La elección de este material semiconductor vino motivada por la posibilidad que ofrece de detectar y procesar señales simultáneamente, en un amplio margen de longitudes de onda, al igual que su más directo competidor el GaN. En esta memoria se da en primer lugar una visión general de las propiedades estructurales y ópticas del ZnO, prestando especial atención a su ternario ZnMgO y a las estructuras de pozo cuántico ZnMgO/ZnO. Además, se han desarrollado los conocimientos teóricos necesarios para una mejor compresión y discusión de los resultados alcanzados. En lo que respecta a los resultados de esta memoria, en esencia, estos se dividen en dos bloques. Fotodiodos desarrollados sobre capas delgadas de ZnMgO no-polar, y sobre estructuras de pozo cuántico de ZnMgO/ZnO no-polares y semipolares Fotodiodos de capas delgadas de ZnMgO. Es bien conocido que la adición de Mg a la estructura cristalina del ZnO desplaza el borde de absorción hacia energías mayores en el UV. Se ha aprovechado esto para fabricar fotodiodos Schottky sobre capas de ZnMgO crecidas por MOCVD y MBE, los cuales detecten en un ventana de energías comprendida entre 3.3 a 4.6 eV. Sobre las capas de ZnMgO, con diferentes contenidos de Mg(5.6-18.0 %), crecidas por MOCVD se han fabricado fotodiodos Schottky. Se han estudiado en detalle las curvas corrientevoltaje (I-V). Seguidamente, se ha realizado un análisis de la respuesta espectral bajo polarización inversa. Tanto los valores de responsividad obtenidos como el contraste UV/VIS están claramente aumentados por la presencia de ganancia. Paralelamente, se han realizado medidas de espectroscopia de niveles profundos (DLOS), identificándose la presencia de dos niveles profundos de carácter aceptor. El papel desempeñado por estos en la ganancia ha sido analizado meticulosamente. Se ha demostrado que cuando estos son fotoionizados son responsables directos del gran aumento de la corriente túnel que se produce a través de la barrera Schottky, dando lugar a la presencia de la ganancia observada, que además resulta ser función del flujo de fotones incidente. Para extender el rango detección hasta 4.6 eV se fabricaron fotodiodos sobre capas de ZnMgO de altísima calidad cristalina crecidas por MBE. Sobre estos se ha realizado un riguroso análisis de las curvas I-V y de las curvas capacidad-voltaje (CV), para posteriormente identificar los niveles profundos presentes en el material, mediante la técnica de DLOS. Así mismo se ha medido la respuesta espectral de los fotodetectores, la cual muestra un corte abrupto y un altísimo contraste UV/VIS. Además, se ha demostrado como estos son perfectos candidatos para la detección de luz en la región ciega al Sol. Por otra parte, se han fabricado fotodiodos MSM sobre estas mismas capas. Se han estudiado las principales figuras de mérito de estos, observándose unas corrientes bajas de oscuridad, un contraste UV/VIS de 103, y la presencia de fotocorriente persistente. Fotodiodos Schottky de pozos cuánticos de ZnO/ZnMgO. En el segundo bloque de esta memoria, con el objeto final de clarificar el impacto que tiene el tratamiento del H2O2 sobre las características optoelectrónicas de los dispositivos, se ha realizado un estudio detallado, en el que se han analizado por separado fotodiodos tratados y no tratados con H2O2, fabricados sobre pozos cuánticos de ZnMgO/ZnO. Se ha estudiado la respuesta espectral en ambos casos, observándose la presencia de ganancia en los dos. A través de un análisis meticuloso de las características electrónicas y optoeletrónicas de los fotodiodos, se han identificado dos mecanismos de ganancia internos diferentes en función de que la muestra sea tratada o no-tratada. Se han estudiado fotodetectores sensibles a la polarización de la luz (PSPDs) usando estructuras de pozo cuántico no-polares y semipolares sobre sustratos de zafiro y sustratos de ZnO. En lo que respecta a los PSPDs sobre zafiro, en los cuales el pozo presenta una tensión acumulada en el plano, se ha visto que el borde de absorción se desplaza _E _21 meV con respecto a luz linealmente polarizada perpendicular y paralela al eje-c, midiéndose un contraste (RE || c /RE c)max _ 6. Con respecto a los PSPDs crecidos sobre ZnO, los cuales tienen el pozo relajado, se ha obtenido un 4E _30-40, y 21 meV para las heteroestructuras no-polar y semipolar, respectivamente. Además el máximo contraste de responsividad fue de (RE || c /RE c)max _ 6 . Esta sensibilidad a la polarización de la luz ha sido explicada en términos de las transiciones excitónicas entre la banda de conducción y las tres bandas de valencia. ABSTRACT The main goal of the present thesis is the fabrication and characterization of Schottky photodiodes based on ZnMgO layers and ZnMgO / ZnO quantum wells (QWs) for the UV detection. The decision of choosing this semiconductor was mainly motivated by the possibility it offers of detecting and processing signals simultaneously in a wide range of wavelengths like its main competitor GaN. A general overview about the structural and optical properties of ZnO, ZnMgO layers and ZnMgO/ZnO QWs is given in the first part of this thesis. Besides, it is shown the necessary theoretical knowledge for a better understanding of the discussion presented here. The results of this thesis may be divided in two parts. On the one hand, the first part is based on studying non-polar ZnMgO photodiodes. On the other hand, the second part is focused on the characterization of non-polar and semipolar ZnMgO / ZnO QWs Schottky photodiodes. ZnMgO photodiodes. It is well known that the addition of Mg in the crystal structure of ZnO results in a strong blue-shift of the ZnO band-gap. Taking into account this fact Schottky photodiodes were fabricated on ZnMgO layers grown by MOCVD and MBE. Concerning ZnMgO layers grown by MOCVD, a series of Schottky photodiodes were fabricated, by varying the Mg content from 5.6% to 18 %. Firstly, it has been studied in detail the current-voltage curves. Subsequently, spectral response was analyzed at reverse bias voltage. Both the rejection ratio and the responsivity are shown to be largely enhanced by the presence of an internal gain mechanism. Simultaneously, measurements of deep level optical spectroscopy were carried out, identifying the presence of two acceptor-like deep levels. The role played for these in the gain observed was studied in detail. It has been demonstrated that when these are photoionized cause a large increase in the tunnel current through the Schottky barrier, yielding internal gains that are a function of the incident photon flux. In order to extend the detection range up to 4.6 eV, photodiodes ZnMgO grown by MBE were fabricated. An exhaustive analysis of the both I-V and CV characteristics was performed. Once again, deep levels were identified by using the technique DLOS. Furthermore, the spectral response was measured, observing sharp absorption edges and high UV/VIS rejections ratio. The results obtained have confirmed these photodiodes are excellent candidates for the light detection in the solar-blind region. In addition, MSM photodiodes have also been fabricated on the same layers. The main figures of merit have been studied, showing low dark currents, a large UV/VIS rejection ratio and persistent photocurrent. ZnMgO/ZnO QWs photodiodes. The second part was focused on ZnMgO/ ZnO QWs. In order to clarify the impact of the H2O2 treatment on the performance of the Schottky diodes, a comparative study using treated and untreated ZnMgO/ZnO photodiodes has been carried out. The spectral response in both cases has shown the presence of gain, under reverse bias. Finally, by means of the analysis of electronic and optoelectronic characteristics, two different internal gain mechanisms have been indentified in treated and non-treated material. Light polarization-sensitive UV photodetectors (PSPDs) using non-polar and semipolar ZnMgO/ZnO multiple quantum wells grown both on sapphire and ZnO substrates have been demonstrated. For the PSPDs grown on sapphire with anisotropic biaxial in-plain strain, the responsivity absorption edge shifts by _E _21 meV between light polarized perpendicular and parallel to the c-axis, and the maximum responsivity contrast is (RE || c /RE c)max _ 6 . For the PSPDs grown on ZnO, with strain-free quantum wells, 4E _30-40, and 21 meV for non-polar and semipolar heterostructures, and maximum (R /R||)max _10. for non-polar heterostructure was achieved. These light polarization sensitivities have been explained in terms of the excitonic transitions between the conduction and the three valence bands.

Thermally assisted tunneling transport in La0.7Ca0.3MnO3/SrTiO3:Nb Schottky-like heterojunctions

We report on the electrical transport properties of all-oxide La0.7Ca0.3MnO3/SrTiO3:Nb heterojunctions with lateral size of just a few micrometers. The use of lithography techniques to pattern manganite pillars ensures perpendicular transport and allows exploration of the microscopic conduction mechanism through the interface. From the analysis of the current-voltage characteristics in the temperature range 20-280 K we find a Schottky-like behavior that can be described by a mechanism of thermally assisted tunneling if a temperature-dependent value of the dielectric permittivity of SrTiO3:Nb (NSTO) is considered.We determine the Schottky energy barrier at the interface, qVB = 1.10 ± 0.02 eV, which is found to be temperature independent, and a value of ? = 17 ± 2 meV for the energy of the Fermi level in NSTO with respect to the bottom of its conduction band.

Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky diodes for extreme ultraviolet (EUV) detection. AlGaN layers were grown on silicon wafers by molecular beam epitaxy with the conventional and inverted Schottky structure, where the undoped, active layer was grown before or after the n-doped layer, respectively. Different current mechanisms were observed in the two structures. The inverted Schottky diode was designed for the optimized backside sensitivity in the hybrid imagers. A cut-off wavelength of 280 nm was observed with three orders of magnitude intrinsic rejection ratio of the visible radiation. Furthermore, the inverted structure was characterized using a EUV source based on helium discharge and an open electrode design was used to improve the sensitivity. The characteristic He I and He II emission lines were observed at the wavelengths of 58.4 nm and 30.4 nm, respectively, proving the feasibility of using the inverted layer stack for EUV detection

Investigation of AlInN barrier ISFET structures with GaN capping for pH detection

The pH response of GaN/AlInN/AlN/GaN ion-sensitive field effect transistor (ISFET) on Si substrates has been characterized. We analyzed the variation of the surface potential (ΔVsp/ΔpH) and current (ΔIds/ΔpH) with solution pH in devices with the same indium content (17%, in-plane lattice-matched to GaN) and different AlInN thickness (6 nm and 10 nm), and compared with the literature. The shrinkage of the barrier, that has the effect to increase the transconductance of the device, makes the 2-dimensional electron density (2DEG) at the interface very sensitive to changes in the surface. Although the surface potential sensitivity to pH is similar in the two devices, the current change with pH (ΔIds/ΔpH), when biasing the ISFET by a Ag/AgCl reference electrode, is almost 50% higher in the device with 6 nm AlInN barrier, compared to the device with 10 nm barrier. When measuring the current response (ΔIds/ΔpH) without reference electrode, the device with thinner AlInN layer has a larger response than the thicker one, of a factor of 140%, and that current response without reference electrode is only 22% lower than its maximum response obtained using reference electrode.

Resonant behaviour of the barrier of YBa2Cu3O7 grain boundary Josephson junctions fabricated on bicrystalline substrates with different geometries

We have analyzed a resonant behavior in the dielectric constant associated to the barrier of YBa2Cu3O7 (YBCO) grain boundary Josephson junctions (GBJJs) fabricated on a wide variety of bicrystalline substrates: 12° [0 0 1] tilt asymmetric, 24° [0 0 1] tilt asymmetric, 24° [0 0 1] tilt symmetric, 24° [1 0 0] tilt asymmetric, 45° [1 0 0] tilt asymmetric and 24° [0 0 1] tilt symmetric +45° [1 0 0] tilt asymmetric bicrystals. The resonance analysis allows us to estimate a more appropriate value of the relative dielectric constant, and so a more adequate value for the length L of the normal N region assuming a SNINS model for the barrier. In this work, the L dependence on the critical current density Jc has been investigated. This analysis makes possible a single representation for all the substrate geometries independently on around which axes the rotation is produced to generate the grain boundary. On the other hand, no clear evidences exist on the origin of the resonance. The resonance frequency is in the order of 1011 Hz, pointing to a phonon dynamic influence on the resonance mechanism. Besides, its position is affected by the oxygen content of the barrier: a shift at low frequencies is observed when the misorientation angle increases.

Effect of type of dietary carbohydrates on digestion, intestinal barrier and growth performance in 25-d weaned rabbits

Los objetivos globales de esta tesis han sido estudiar el efecto que los carbohidratos de la dieta ejercen sobre los rendimientos productivos, la barrera intestinal, y la digestión de animales destetados a 25 días de edad. Además se ha estudiado cuál es el mejor periodo para determinar la digestibilidad fecal tras el destete a esta edad. En el primer experimento se estudió el efecto de la fibra neutro detergente soluble (FNDS) sobre la barrera intestinal, digestión, microbiota intestinal y rendimientos productivos de gazapos en gazapos en la fase post-destete. Se diseñaron tres piensos isonutritivos en los que la única fuente de variación fueron los niveles de fibra soluble. A partir de una dieta control (AH) con 103 g/kg de materia seca de FNDS y alfalfa como fuente principal de fibra, se sustituyó la mitad de esta alfalfa por una mezcla de pulpa de remolacha y pulpa de manzana (75:25) en el pienso B-AP y por una mezcla de cascarilla y concentrado de proteína de soja (88:12) en el pienso OH, obteniéndose 131 y 79 g/kg de FNDS sobre materia seca, respectivamente. Los conejos se destetaron a 25 días y fueron alimentados con los piensos experimentales hasta los 35 días de edad, momento en el que se sacrificaron para la determinación de la digestibilidad ileal aparente (DIA) de la materia seca (MS), proteína bruta (PB) y almidón, la morfología de la mucosa, y actividad enzimática en el yeyuno, el tejido linfoide asociado a la mucosa, así como la microbiota intestinal. Para la determinación de la morfología de la mucosa se utilizaron adicionalmente 19 animales lactantes de 35 días de edad. Para el estudio de la tasa de mortalidad, se utilizaron 118 animales más por tratamiento que recibieron los piensos experimentales durante las dos semanas post-destete y posteriormente un pienso comercial hasta los 60 días de edad. Los animales recibieron durante todo el experimento medicación en el agua de bebida (100 ppm de apramicina sulfato y 120 ppm de tilosina tartrato). El nivel de fibra soluble mejoró los parámetros que se utilizaron para la caracterización del estado de la barrera intestinal. Los conejos alimentados con el mayor nivel de FNDS en el pienso presentaron una mayor longitud de los villi (P=0.001), un mayor ratio longitud villi/profundidad de las criptas (8.14; P=0.001), una mayor actividad disacaridásica (8671 μmol de glucosa/g de proteína; P=0.019), así como una mayor digestibilidad ileal (96.8%; P=0.002), observándose una reducción en el flujo ileal de almidón a medida que se incrementó el nivel de fibra soluble en el pienso (1,2 vs 0,5 g/d; P=0.001). Los animales lactantes a 35 días de edad presentaron un ratio longitud de villi/profundidad de las criptas menor que el observado en aquéllos alimentados con el pienso B-AP (6.70), pero superior al de los piensos AH y OH. Niveles inferiores de NDFS tendieron (P=0.074) a incrementar la respuesta inmune de tipo celular (linfocitos CD8+). El pienso también afectó a la producción de IL2 (CD25+; P=0.029; CD5+CD25+; P=0.057), pero sin llegar a establecerse una clara relación con el nivel de fibra soluble. La diversidad de la microbiota intestinal no se vio afectada por el pienso (P ≥ 0.38). Los animales alimentados con las piensos B-AP y AH presentaron una reducción en la frecuencia de detección de Clostridium perfringens tanto en íleon (P=0.062) como en ciego (4.3 vs. 17.6%, P =0.047), comparado con el pienso OH. Además la tasa de mortalidad (118 gazapos/pienso) disminuyó de 14.4% en el pienso OH a 5.1% en el pienso B-AP. Entre los 32 y los 35 días de edad se determinó la digestibilidad fecal aparente (14/pienso) de la materia seca (MS), energía bruta (EB), proteína bruta (PB), fibra neutro detergente (FND), fibra ácido detergente (FAD) y almidón. Este grupo, junto con otros nueve animales por tratamiento se utilizaron para determinar el peso del estómago y el ciego, la concentración cecal de ácidos grasos volátiles (AGV) y amoniaco (NH3), así como las tasas de similitud de la microbiota intestinal. Además se estudiaron los rendimientos productivos (35 animales/tratamiento) de los gazapos durante todo el período de cebo, consumiendo los piensos experimentales desde el destete hasta los 35 días y posteriormente un pienso comercial hasta los 60 días de edad. Niveles crecientes de FNDS mejoraron la digestibilidad fecal de la materia seca (MS) y energía (P<0.001). La inclusión FNDS aumentó de manera lineal el peso del contenido cecal (P=0.001) y el peso del aparato digestivo completo (P=0.008), y en los días previos al sacrificio disminuyó de manera lineal el consumo medio diario (P=0.040). Se observó además, una disminución lineal (P≤0.041) del pH del estómago. No se encontró relación entre el pH, la concentración y proporciones molares de AGV y el nivel de FNDS. El pienso pareció tener un efecto, incluso superior al de la madre, sobre la tasa de similitud de la microbiota, y los efectos fueron mayores a nivel cecal que ileal. La eficacia alimenticia aumentó de manera lineal en un 12% entre piensos extremos tras el destete (25- 39d) y en un 3% en el período global de cebo con niveles mayores de NDFS. El consumo medio diario durante la fase post-destete y durante todo el período de cebo, tendió a aumen tar (P≤0.079) con niveles mayores de FNDS, sin embargo no se apreció efecto sobre la ganancia media diaria (P≥0.15). En conclusión, el incremento del nivel de fibra soluble en el pienso parece resultar beneficioso para la salud del animal ya que mejora la integridad de la mucosa, y reduce la frecuencia de detección de potenciales patógenos como C. perfringens y Campylobacter spp. Conforme a estos resultados, debería tenerse en cuenta el contenido en fibra soluble en la formulación de piensos de conejos en la fase post-destete. El objetivo del segundo experimento fue determinar el efecto de la fuente de almidón sobre la digestión, la microbiota intestinal y los rendimientos productivos en conejos destetados con 25 días de edad. Se formularon tres piensos isonutritivos en los que se modificaron las principales fuentes de almidón: trigo crudo, trigo cocido y una combinación de trigo y arroz cocido. Dos grupos de 99 y 193 animales se destetaron con 25 días de edad. El primero de ellos se utilizó para la determinación de los parámetros productivos conforme al mismo protocolo seguido en el experimento anterior. El segundo de los grupos se utilizó para la determinación de la digestibilidad fecal de 32 a 35 d, la digestibilidad ileal aparente (DIA) a 35 d, la morfología de la mucosa intestinal, los parámetros de fermentación cecal; así como, la caracterización de la microbiota intestinal. Se utilizaron además dos grupos adicionales de animales 384 (medicados) y 177 (no medicados) para estudiar el efecto de la suplementación con antibióticos en el agua de bebida sobre la mortalidad. El procesado térmico del trigo mejoró ligeramente la digestibilidad ileal del almidón (P=0.020) pero no modificó el flujo final de almidón que alcanzó el ciego, observándose una mayor frecuencia de detección de Campylobacter spp. y Ruminococcus spp. en ciego (P≤0.023), pero sin cambios a nivel ileal. El procesado térmico del trigo no afectó tampoco a los parámetros productivos, la mortalidad, la digestibilidad ileal y fecal o la morfología de la mucosa. La sustitución parcial del trigo cocido por arroz cocido, penalizó la digestibilidad ileal del almidón (P=0.020) e incrementó el flujo ileal de este nutriente al ciego (P=0.007). Sin embargo no afectó a la mortalidad, pese a que se detectaron cambios en la microbiota tanto a nivel ileal como cecal, disminuyendo la frecuencia de detección de Campylobacter spp. (en íleon y ciego), Helicobacter spp. (en íleon) y Ruminococcus spp (en ciego) e incrementando Bacteroides spp. (en ciego) (P≤0.046). El empleo de arroz cocido en las piensos post-destete no tuvieron efectos sobre los parámetros productivos, la mortalidad, la digestibilidad ileal y fecal a excepción del almidón, o la morfología de la mucosa. La suplementación con antibiótico redujo la fre cuencia de detección de la mayoría de las bacterias estudiadas (P≤0.048), sobre todo para Campylobacter spp., Clostridium perfringens y Propionibacterium spp. (P≤0.048), observándose un efecto mayor a nivel ileal que cecal, lo que se asoció a la bajada significativa (P<0.001) de la mortalidad. En conclusión, los resultados de este experimento indican que la fuente de almidón afecta a la microbiota intestinal pero no influiye sobre la salud del animal. En relación al procesado, el uso de trigo cocido junto con arroz cocido no mejora los resultados obtenidos con trigo duro, si bienserían necesarios más experimentos que confirmaran este punto. El último de los experimentos se centró en un aspecto metodológico. Dado que, los conejos destetados presentan un patrón digestivo diferente al de un animal adulto resultado de su inmadurez digestiva, el objetivo buscado era tratar de determinar el mejor procedimiento para la determinación de la digestibilidad fecal en los gazapos en la fase post-destete. Para tal fin se utilizaron 15 animales/tratamiento de tres camadas diferentes que se destetaron con 25 días, suministrándoles un pienso comercial de crecimiento-cebo. Se registró el consumo medio diario y la excreción diaria de heces desde el día 25 hasta el día 40 de edad para la determinación de la digestibilidad de la MS. La camada afectó al consumo medio diario y la excreción de heces (P=0.013 y 0.014, respectivamente), observándose una tendencia (P=0.061) en la digestibilidad. La edad afectó (P<0.001) a todos estos factores, incrementándose de manera más evidente la excreción que la ingestión de materia seca en la primera semana de vida, para aumentar de forma paralela a partir de la segunda. La correlación entre el consumo medio diario fue mayor con la excreción de heces del mismo día que con la del día siguiente, por lo que se utilizó el primero para la determinación de la digestibilidad de la MS (MSd). La MSd disminuyó de manera lineal hasta los 32 días de edad (2.17±0.25 unidades porcentuales por día), mientras que permaneció constante desde los 32 a los 40 días (69.4±0.47%). Por otro lado, la desviación estándar de la MSd se redujo cuando se incrementó el período de recogida de 2 a 6 días en un 54%. Conforme a los resultados obtenidos, se puede concluir que no es aconsejable comenzar las pruebas de digestibilidad antes de los 32 días de edad y que el número de animales necesario para detectar diferencias significativas entre tratamientos dependerá del período de recogida de heces. ABSTRACT The global aim of this thesis has been to study the effect of dietary carbohydrates on growth, performance, digestion and intestinal barrier in 25-d weaned rabbits. In addition there has also been studied which is the best period to determine the fecal digestibility after weaning. The first experiment focused on the effect of Neutral Detergent Soluble Fibre (NDSF) on gut barrier function, digestion, intestinal microbiota and growth performance n rabbits in the post-weaning period. Three isonutritive diets which only varied in the levels of soluble fiber were formulated such as it described as follows: a control diet (AH) containing 103 g of neutral detergent soluble fiber, including alfalfa as main source of fiber, was replaced by a mixture of beet and apple pulp (75-25) in the B-AP diet and, by a mix of oat hulls and soybean protein concentrate (88:12) in the OH diet, resulting 131 and 79 g of NDFS/kg of dry matter, respectively. Rabbits, weaned at 25 days of age, were fed the experimental diets up to 35 days of age, moment in which they were slaughtered for apparent ileal digestibility (AID) of dry matter (DM), crude protein (CP) and starch, mucosa morphology, sucrose activity, characterization of lamina propria lymphocytes and intestinal microbiota. To assess mucosal morphology, 19 suckling 35-d-old rabbits were also used. For mortality study, besides these animals, 118 additional rabbits per treatment were fed the experimental diets for two weeks period and thereafter received a commercial diet until 60 days of age. Rabbits were water medicated during the whole experimental period (100 ppm de apramicine sulphate and 120 ppm of tylosine tartrate). Level of soluble fiber improved all the parameters used for the characterization of the intestinal barrier condition. Villous height of the jejunal mucosa increased with dietary soluble fiber (P=0.001). Villous height of jejunal mucosa increased with dietary soluble fiber (P = 0.001). Rabbits fed the highest level of soluble fiber (BA-P diet) showed the highest villous height/crypth depth ratio (8.14; P = 0.001), sucrase specific activity (8671 μmol glucose/ g protein; P = 0.019), and the greatest ileal starch digestibility (96.8%; P = 0.002). The opposite effects were observed in rabbits fed decreased levels of soluble fiber (AH and OH diets; 4.70, 5,848 μmol of glucose/g of protein, as average, respectively). The lowest ileal starch digestibility was detected for animal fed OH diet (93.2%). Suckling rabbits of the same age showed a lower villous height/crypt depth ratio (6.70) compared with the B-AP diet group, but this ration was higher that the AH or OH diet groups. Lower levels of soluble fiber tended (P = 0.074) to increase the cellular immune response (CD8+ lymphocytes). Diet affected IL-2 production (CD25+, P = 0.029; CD5+CD25+, P = 0.057), with no clear relationship between soluble fiber and IL-2. The intestinal microbiota biodiversity was not affected by diets (P ≥ 0.38). Animals fed B-AP and AH diets had a reduced cecal frequency of detection compatible with Campylobacter spp. (20.3 vs. 37.8, P = 0.074), and Clostridium perfringens (4.3 vs. 17.6%, P = 0.047), compared with the OH diet group. Moreover, the mortality rates decreased from 14.4 (OH diet) to 5.1% (B-AP diet) with the increased presence of soluble fiber in the diet. Between 32 and 35 days of age, faecal apparent digestibility of dry matter (DM), gross energy (GE), crude protein (CP), neutral detergent fiber (NDF), acid detergent fiber (ADF) and starch was determined (14/diet). This group, plus another nine rabbits/diet were used to determine weight of stomach and caecum and their contents, cecal fermentation traits and similarity rate (SR) of intestinal microbiota. Besides, growth performance parameters (35 rabbits/diet) were studied during the whole fattening period, in animals consuming the experimental feed after the weaning up to 35 days of age and later on a commercial diet up animals reached 60 days of age. Increasing levels of Neutral Detergent Soluble Fiber improved faecal dry matter and energy digestibility (P<0.001). NDSF inclusion improved linearly weight of the caecal content (P=0.001) and the total gastrointestinal tract (P=0.008), and in the previous days to slaughter a linear decrease of daily feed intake in diet with highest level of soluble fiber was also observed. Stomach pH decreased linearly with increasing levels of NDFS (P≤0.041). No relation between NDSF level on pH, concentration and molar proportion of VFA was found. Treatments appeared to influence the similarity rate of microbiota, even higher to mother effect. These effects were higher in ileum than in caecum. A linear positive effect of feed efficiency was observed, which increased around 12% in the two weeks post-weaning (25-39d) and 3% in the whole fattening period between extreme diets with highest levels of soluble fiber. Average daily feed intake during the two weeks after weaning and in the whole fattening period, tended (P≤0.079) to increase with highest levels of NDSF; although there were no effect on daily weight gain (≥0.15). In conclusion, an increase of soluble fiber in the feed seems to be beneficial for animal health, due to improve mucose integrity and reduce detection frequency of those poten tial pathogens like C. perfringens and Campylobacter spp. According to these results, level of soluble fiber should be taking care in feed rabbit formulation in the post-weaning period. The objective of the second experiment was to determine the effect of source of starch on digestion, intestinal microbiota and growth performance in twenty-five-day old weaned rabbits. To accomplish with this aim three iso-nutritive diets were formulated with different source of starch: raw wheat, boiled wheat and a combination of boiled wheat and boiled rice. Two groups of 99 and 193 rabbits were weaned at 25 days of age. The first group was used for growth performance determination following the same protocol than in previous experiment. The second group was used to determine faecal digestibility from 32 to 35 d, apparent ileal digestibility (AID) at 35 d, jejunal mucosa morphology, caecal fermentation traits and characterization of intestinal microbiota. For mortality, two additional groups of 384 (medicated) and 177 (not medicated) were used in order to study the effect of antibiotic water supply supplementation. Heat processing of starch slightly improved ileal digestibility of starch (P=0.020) but did not modify the flow of starch to the caecum. An increase in frequency of detection of Campylobacter spp. y Ruminococcus spp. was observed in the caecum (P≤0.023), with no changes at ileal level. Heat processing of wheat did not modify growth performance, mortality, ileal or faecal digestibility and mucosa morphology. Partial substitution of boiled wheat for boiled rice in the diet impaired ileal starch digestibility (P=0.020) and increased the ileal flow of this nutrient to the caecum (P=0.007). However, it did not affect mortality rate, although changes in the ileal and caecal intestinal microbiota were detected, decreasing the frequency of detection of Campylobacter spp. (both ileum and caecum), Helicobacter spp. (at ileum) and Ruminococcus spp (at caecum) and increasing the Bacteroides spp. (at caecum) (P≤0.046). The effect of boiled rice supplementation did not alter growth performance, mortality, ileal or faecal digestibility of other nutrients than starch, and mucosa morphology. Medication of rabbits reduced the ileal frequency of detection of most bacteria studied (P≤0.048), especially for Campylobacter spp., Clostridium perfringens y Propionibacterium spp. (P≤0.048), resulting the effect higher at ileal than caecal level and relating it with a strong reduction of mortality rate (P<0.001). In conclusion, the results of this experiment make think that the source of starch affects the intestinal microbiota but they do not seem to influence animal health. In relation to the effect of heat processed the use of cooked wheat or cooked rice it does not seem to im prove the results obtained with hard wheat, but there would be necessary more experiments that were confirming this point. The last experiment focused on a methodological aspect. Considering that, weaned rabbits have a different digestive pattern than older animals due to their digestive immaturity; the fixed objective was to determine the best procedure for faecal digestibility determination in young rabbits in the post-weaning period. Fifteen rabbits from 5 different litters were weaned at 25 days of age and fed with a commercial feed. Feed intake and faeces excretion were recorded daily from 25 to 40 days of age for dry matter digestibility (DMd) determination. Litter affected daily DM intake and excretion (P=0.013 y 0.014, respectively) and tended to affect DMd (P=0.061). Age affected all these factors (P<0.001), but ingestion increased slowly than dry matter excretion during the first week buth they evolved similarly in the second week. The correlation between daily feed intakes was higher with the faeces excretion of the day than with faeces excretion of the next day, and the first values were used to determine daily DMd. The DMd decreased linearly from weaning to 32 d of age (2.17±0.25 percentage units per day), whereas from 32 to 40 d remained constant (69.4±0.47%). On the other hand, average standard deviation of DMd decreased by 54% when the length of collection period increased from 2 to 6d. Consequently to the obtained results, it could be concluded that it would not be advisable to start digestibility trials before the 32 days of age and that the number of animals required to detect a significant difference among means would depend on the collection period.

Properties and applications of high electron density structures based on InN and related compounds

El objetivo principal del presente trabajo es estudiar y explotar estructuras que presentan un gas bidimensional de electrones (2DEG) basadas en compuestos nitruros con alto contenido de indio. Existen muchas preguntas abiertas, relacionadas con el nitruro de indio y sus aleaciones, algunas de las cuales se han abordado en este estudio. En particular, se han investigado temas relacionados con el análisis y la tecnología del material, tanto para el InN y heteroestructuras de InAl(Ga)N/GaN como para sus aplicaciones a dispositivos avanzados. Después de un análisis de la dependencia de las propiedades del InN con respecto a tratamientos de procesado de dispositivos (plasma y térmicos), el problema relacionado con la formación de un contacto rectificador es considerado. Concretamente, su dificultad es debida a la presencia de acumulación de electrones superficiales en la forma de un gas bidimensional de electrones, debido al pinning del nivel de Fermi. El uso de métodos electroquímicos, comparados con técnicas propias de la microelectrónica, ha ayudado para la realización de esta tarea. En particular, se ha conseguido lamodulación de la acumulación de electrones con éxito. En heteroestructuras como InAl(Ga)N/GaN, el gas bidimensional está presente en la intercara entre GaN y InAl(Ga)N, aunque no haya polarización externa (estructuras modo on). La tecnología relacionada con la fabricación de transistores de alta movilidad en modo off (E-mode) es investigada. Se utiliza un método de ataque húmedo mediante una solución de contenido alcalino, estudiando las modificaciones estructurales que sufre la barrera. En este sentido, la necesidad de un control preciso sobre el material atacado es fundamental para obtener una estructura recessed para aplicaciones a transistores, con densidad de defectos e inhomogeneidad mínimos. La dependencia de la velocidad de ataque de las propiedades de las muestras antes del tratamiento es observada y comentada. Se presentan también investigaciones relacionadas con las propiedades básicas del InN. Gracias al uso de una puerta a través de un electrolito, el desplazamiento de los picos obtenidos por espectroscopia Raman es correlacionado con una variación de la densidad de electrones superficiales. En lo que concierne la aplicación a dispositivos, debido al estado de la tecnología actual y a la calidad del material InN, todavía no apto para dispositivos, la tesis se enfoca a la aplicación de heteroestructuras de InAl(Ga)N/GaN. Gracias a las ventajas de una barrera muy fina, comparada con la tecnología de AlGaN/GaN, el uso de esta estructura es adecuado para aplicaciones que requieren una elevada sensibilidad, estando el canal 2DEG más cerca de la superficie. De hecho, la sensibilidad obtenida en sensores de pH es comparable al estado del arte en términos de variaciones de potencial superficial, y, debido al poco espesor de la barrera, la variación de la corriente con el pH puede ser medida sin necesidad de un electrodo de referencia externo. Además, estructuras fotoconductivas basadas en un gas bidimensional presentan alta ganancia debida al elevado campo eléctrico en la intercara, que induce una elevada fuerza de separación entre hueco y electrón generados por absorción de luz. El uso de metalizaciones de tipo Schottky (fotodiodos Schottky y metal-semiconductormetal) reduce la corriente de oscuridad, en comparación con los fotoconductores. Además, la barrera delgada aumenta la eficiencia de extracción de los portadores. En consecuencia, se obtiene ganancia en todos los dispositivos analizados basados en heteroestructuras de InAl(Ga)N/GaN. Aunque presentando fotoconductividad persistente (PPC), los dispositivos resultan más rápidos con respeto a los valores que se dan en la literatura acerca de PPC en sistemas fotoconductivos. ABSTRACT The main objective of the present work is to study and exploit the two-dimensionalelectron- gas (2DEG) structures based on In-related nitride compounds. Many open questions are analyzed. In particular, technology and material-related topics are the focus of interest regarding both InNmaterial and InAl(Ga)N/GaNheterostructures (HSs) as well as their application to advanced devices. After the analysis of the dependence of InN properties on processing treatments (plasma-based and thermal), the problemof electrical blocking behaviour is taken into consideration. In particular its difficulty is due to the presence of a surface electron accumulation (SEA) in the form of a 2DEG, due to Fermi level pinning. The use of electrochemical methods, compared to standard microelectronic techniques, helped in the successful realization of this task. In particular, reversible modulation of SEA is accomplished. In heterostructures such as InAl(Ga)N/GaN, the 2DEGis present at the interface between GaN and InAl(Ga)N even without an external bias (normally-on structures). The technology related to the fabrication of normally off (E-mode) high-electron-mobility transistors (HEMTs) is investigated in heterostructures. An alkali-based wet-etching method is analysed, standing out the structural modifications the barrier underwent. The need of a precise control of the etched material is crucial, in this sense, to obtain a recessed structure for HEMT application with the lowest defect density and inhomogeneity. The dependence of the etch rate on the as-grown properties is observed and commented. Fundamental investigation related to InNis presented, related to the physics of this degeneratematerial. With the help of electrolyte gating (EG), the shift in Raman peaks is correlated to a variation in surface eletron density. As far as the application to device is concerned, due to the actual state of the technology and material quality of InN, not suitable for working devices yet, the focus is directed to the applications of InAl(Ga)N/GaN HSs. Due to the advantages of a very thin barrier layer, compared to standard AlGaN/GaN technology, the use of this structure is suitable for high sensitivity applications being the 2DEG channel closer to the surface. In fact, pH sensitivity obtained is comparable to the state-of-the-art in terms of surface potential variations, and, due to the ultrathin barrier, the current variation with pH can be recorded with no need of the external reference electrode. Moreover, 2DEG photoconductive structures present a high photoconductive gain duemostly to the high electric field at the interface,and hence a high separation strength of photogenerated electron and hole. The use of Schottky metallizations (Schottky photodiode and metal-semiconductor-metal) reduce the dark current, compared to photoconduction, and the thin barrier helps to increase the extraction efficiency. Gain is obtained in all the device structures investigated. The devices, even if they present persistent photoconductivity (PPC), resulted faster than the standard PPC related decay values.

Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures

The quaternary nitride-based high electron mobility transistor (HEMT) has been recently a focus of interest because of the possibility to grow lattice-matched barrier to GaN and tune the barrier bandgap at the same time.

Investigation of AlInN barrier ISFET structures with GaN capping for pH detection

In the last decade the interest in nitride-based sensors (gas, ions...) and bio-sensors is increased. In the case of ion sensitive FET (ISFET), gate voltages induced by ions adsorbed onto the gate region modulate the source-drain currents.

Propagation losses by tunnelling in barrier optical waveguides

An analytical model is proposed in order to estimate the optical propagation losses due to tunnelling in barrier waveguides. The results are validated by means of a beam propagation method (BPM) simulations for different waveguides conditions.