Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates

This work describes the electron-beam (e-beam) lithography process developed to manufacture nano interdigital transducers (IDTs) to be used in high frequency (GHz) surface acoustic wave (SAW) applications. The combination of electron-beam (e-beam) lithography and lift-off process is shown to be effective in fabricating well-defined IDT finger patterns with a line width below 100 nm with a good yield. Working with insulating piezoelectric substrates brings about e-beam deflection. It is also shown how a very thin organic anti-static layer works well in avoiding this charge accumulation during e-beam lithography on the resist layer. However, the use of this anti-static layer is not required with the insulating piezoelectric layer laying on a semiconducting substrate such as highly doped silicon. The effect of the e-beam dose on a number of different layers (of insulating, insulating on semiconducting, semiconducting, and conductive natures) is provided. Among other advantages, the use of reduced e-beam doses increases the manufacturing time. The principal aim of this work is to explain the interrelation among e-beam dose, substrate nature and IDT structure. An extensive study of the e-beam lithography of long IDT-fingers is provided, in a wide variety of electrode widths, electrode numbers and electrode pitches. It is worthy to highlight that this work shows the influence of the e-beam dose on five substrates of different conductive nature

Sputter optimization of AlN on diamond substrates for high frequency SAW resonators

The AlN/diamond structure is an attractive combination for SAW devices and its application at high frequencies. In this work, the synthesis of AlN thin films by reactive sputtering has been optimized on diamond substrates in order to process high frequency devices. Polished microcrystalline and as-grown nanocrystalline diamond substrates have been used to deposit AlN of different thickness under equal sputtering conditions. For the smoother substrates, the FWHM of the rocking curve of the (002) AlN peak varies from 3.8° to 2.7° with increasing power. SAW one port resonators have been fabricated on these films, whose electrical characterization (in terms of S11 parameters) is reported.

Fabrication of high frequency SAW resonators using AlN/Diamond/Si technology

The synthesis of AlN on diamond is a great challenge, not only because of the between an AlN/diamond interface, but also because of the high surface roughness of the diamond layers [8, 9]. In the case of microcrystalline diamond, the last problem was solved by polishing. However, polishing nanocrystalline diamond is not straightforward. For the diamond synthesis by CVD, silicon was used as a substrate. The diamond/Si interface presents a smoother diamond than the diamond/air interface. This paper reports on the fabrication of high frequency SAW resonators using AlN/Diamond/Si technology.

Ultra high frequency thin film saw devices

Durante los últimos años el flujo de datos en la transmisión que tiene lugar en los sistemas de comunicación ha aumentado considerablemente de forma que día a día se requieren más aplicaciones trabajando en un rango de frecuencias muy alto (3-30 GHz). Muchos de estos sistemas de comunicación incluyen dispositivos de onda acústica superficial (SAW) y por tanto se hace necesario el aumento de frecuencia a la que éstos trabajan. Pero este incremento de frecuencia de los dispositivos SAW no sólo es utilizado en los sistemas de comunicación, varios tipos de sensores, por ejemplo, aumentan su sensibilidad cuando la frecuencia a la que trabajan también lo hace. Tradicionalmente los dispositivos SAW se han fabricado sobre cuarzo, LiNbO3 y LiTaO3 principalmente. Sin embargo la principal limitación de estos materiales es su velocidad SAW. Además, debido a la alta temperatura a la que se depositan no pueden ser integrados en la tecnología de fabricación CMOS. El uso de la tecnología de capa delgada, en la que un material piezoeléctrico es depositado sobre un substrato, se está utilizando en las últimas décadas para incrementar la velocidad SAW de la estructura y poder obtener dispositivos trabajando en el rango de frecuencias requerido en la actualidad. Por otra parte, esta tecnología podría ser integrada en el proceso de fabricación CMOS. Durante esta tesis nos hemos centrado en la fabricación de dispositivos SAW trabajando a muy alta frecuencia. Para ello, utilizando la tecnología de capa delgada, hemos utilizado la estructura nitruro de aluminio (AlN) sobre diamante que permite conseguir velocidades SAW del sustrato que no se pueden alcanzar con otros materiales. El depósito de AlN se realizó mediante sputtering reactivo. Durante esta tesis se han realizado diferentes experimentos para optimizar dicho depósito de forma que se han obtenido los parámetros óptimos para los cuales se pueden obtener capas de AlN de alta calidad sobre cualquier tipo de sustrato. Además todo el proceso se realizó a baja temperatura para que el procesado de estos dispositivos pueda ser compatible con la tecnología CMOS. Una vez optimizada la estructura AlN/diamante, mediante litografía por haz de electrones se fabricaron resonadores SAW de tamaño nanométrico que sumado a la alta velocidad resultante de la combinación AlN/diamante nos ha permitido obtener dispositivos trabajando en el rango de 10-28 GHz con un alto factor de calidad y rechazo fuera de la banda. Estás frecuencias y prestaciones no han sido alcanzadas por el momento en resonadores de este tipo. Por otra parte, se han utilizado estos dispositivos para fabricar sensores de presión de alta sensibilidad. Estos dispositivos son afectados altamente por los cambios de temperatura. Se realizó también un exhaustivo estudio de cómo se comportan en temperatura estos resonadores, entre -250ºC y 250ºC (rango de temperaturas no estudiado hasta el momento) diferenciándose dos regiones una a muy baja temperatura en la que el dispositivo muestra un coeficiente de retraso en frecuencia (TCF) relativamente bajo y otra a partir de los -100ºC en la que el TCF es similar al observado en la bibliografía. Por tanto, durante esta tesis se ha optimizado el depósito de AlN sobre diamante para que sea compatible con la tecnología CMOS y permita el procesado de dispositivos trabajando a muy alta frecuencia con altas prestaciones para comunicaciones y sensores. ABSTRACT The increasing volume of information in data transmission systems results in a growing demand of applications working in the super-high-frequency band (3–30 GHz). Most of these systems work with surface acoustic wave (SAW) devices and thus there is a necessity of increasing their resonance frequency. Moreover, sensor application includes this kind of devices. The sensitivity of them is proportional with its frequency. Traditionally, quartz, LiNbO3 and LiTaO3 have been used in the fabrication of SAW devices. These materials suffer from a variety of limitations and in particular they have low SAW velocity as well as being incompatible with the CMOS technology. In order to overcome these problems, thin film technology, where a piezoelectric material is deposited on top of a substrate, has been used during the last decades. The piezoelectric/substrate structure allows to reach the frequencies required nowadays and could be compatible with the mass electronic production CMOS technology. This thesis work focuses on the fabrication of SAW devices working in the super-high-frequency range. Thin film technology has been used in order to get it, especially aluminum nitride (AlN) deposited by reactive sputtering on diamond has been used to increase the SAW velocity. Different experiments were carried out to optimize the parameters for the deposit of high quality AlN on any kind of substrates. In addition, the system was optimized under low temperature and thus this process is CMOS compatible. Once the AlN/diamond was optimized, thanks to the used e-beam lithography, nanometric SAW resonators were fabricated. The combination of the structure and the size of the devices allow the fabrication of devices working in the range of 10-28 GHz with a high quality factor and out of band rejection. These high performances and frequencies have not been reached so far for this kind of devices. Moreover, these devices have been used as high sensitivity pressure sensors. They are affected by temperature changes and thus a wide temperature range (-250ºC to 250ºC) study was done. From this study two regions were observed. At very low temperature, the temperature coefficient of frequency (TCF) is low. From -100ºC upwards the TCF is similar to the one appearing in the literature. Therefore, during this thesis work, the sputtering of AlN on diamond substrates was optimized for the CMOS compatible fabrication of high frequency and high performance SAW devices for communication and sensor application.

High precision pressure sensors based on SAW devices in the GHz range

In this paper, an AlN/free-standing nanocrystalline diamond (NCD) system is proposed in order to process high frequency surface acoustic wave (SAW) resonators for sensing applications. The main problem of synthetic diamond is its high surface roughness that worsens the sputtered AlN quality and hence the device response. In order to study the feasibility of this structure, AlN films from 150 nm up to 1200 nm thick have been deposited on free-standing NCD. We have then analysed the influence of the AlN layer thickness on its crystal quality and device response. Optimized thin films of 300 nm have been used to fabricate of one-port SAW resonators operating in the 10–14 GHz frequency range. A SAW based sensor pressure with a sensibility of 0.33 MHz/bar has been fabricated.

Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators

AlN/diamond heterostructures are very promising for high frequency surface acoustic wave (SAW) resonators. In their design, the thickness of the piezoelectric film is one of the key parameters. On the other hand, the film material quality and, hence, the device performance, also depend on that thickness. In this work, polished microcrystalline diamond substrates have been used to deposit AlN films by reactive sputtering, from 150 nm up to 3 μm thick. A high degree of the c-axis orientation has been obtained in all cases. SAW one port resonators at high frequency have been fabricated on these films with a proper combination of the film thickness and transducer size.

Super-high-frequency SAW resonators on AlN/Diamond

This letter describes the procedure to manufacture high-performance surface acoustic wave (SAW) resonators on AlN/diamond heterostructures working at frequencies beyond 10 GHz. In the design of SAW devices on AlN/diamond systems, the thickness of the piezoelectric layer is a key parameter. The influence of the film thickness on the SAW device response has been studied. Optimized thin films combined with advanced e-beam lithographic techniques have allowed the fabrication of one-port SAW resonators with finger width and pitch of 200 nm operating in the 10–14 GHz range with up to 36 dB out-of-band rejection.

Growth of AlN oriented films on insulating substrates.

This work describes the structural and piezoelectric assessment of aluminum nitride (AlN) thin films deposited by pulsed-DC reactive sputtering on insulating substrates. We investigate the effect of different insulating seed layers on AlN properties (crystallinity, residual stress and piezoelectric activity). The seed layers investigated, silicon nitride (Si3N4), silicon dioxide (SiO2), amorphous tantalum oxide (Ta2O5), and amorphous or nano-crystalline titanium oxide (TiO2) are deposited on glass plates to a thickness lower than 100 nm. Before AlN films deposition, their surface is pre-treated with a soft ionic cleaning, either with argon or nitrogen ions. Only AlN films grown of TiO2 seed layers exhibit a significant piezoelectric activity to be used in acoustic device applications. Pure c-axis oriented films, with FWHM of rocking curve of 6º, stress below 500 MPa, and electromechanical coupling factors measured in SAW devices of 1.25% are obtained. The best AlN films are achieved on amorphous TiO2 seed layers deposited at high target power and low sputtering pressure. On the other hand, AlN films deposited on Si3N4, SiO2 and TaOx exhibit a mixed orientation, high stress and very low piezoelectric activity, which invalidate their use in acoustic devices.

High frequency high-order Rayleigh modes in ZnO/GaAs

Strong high-order Rayleigh or Sezawa modes, in addition to the fundamental Rayleigh mode, have been observed in ZnO/GaAs(001) systems along the [110] propagation direction of GaAs. The dispersion of the different acoustic waves has been calculated and compared to the experimental data. The bandwidth and impedance matching characteristics of the multimode SAW delay lines operating at high frequencies (2.5-3.5 GHz regime) have been investigated.

Análisis técnico-económico de acceso al mercado alemán EPEX SPOT

Acciona Energía dispone en Alemania de 150 MW de potencia instalada. Todos ellos de energía eólica, en un total de doce parques eólicos situados en la sur del país. El proyecto tiene por objeto comparar las distintas modalidades de venta de energía procedente de fuentes renovables que ofrece el estado alemán para la cartera de activos de Acciona Energía, llegando a una conclusión final de cuál de ellas es la más aconsejable. Para ello se ha realizado un estudio del funcionamiento y normas del mercado Epex Spot de la electricidad y de la legislación alemana correspondiente a la materia, así como un seguimiento exhaustivo de producción y otras variables de los parques eólicos para su análisis. Los cálculos y las estimaciones realizados llevaron a la conclusión, que la mejor opción era la venta directa en el mercado Epex Spot, para lo que primero habría que darse de alta como agente en dicho mercado. Aunque esta opción asuma mayores riesgos también ofrecería un aumento considerable de ingresos. ABSTRACT Acciona Energía has 150 MW of power capacity in Germany, all of them wind energy in a total of twelve installations, located in the south of the country. The main goal of the project is to compare the different ways to sell the energy which became from renewable source that German state offers for Acciona’s asset portfolio, finding the most advisable conclusion. To do so a study of standards and rules of Epex Spot electricity market and German law related to this topic has been made. In addition of an exhaustive monitoring of energy production and others wind farms variables has been analyzed. The reckoning and estimations saw the conclusion that the best option was the direct sell in Epex Spot market, in order to do that the first of all is to register as market agent. Despite this options assume bigger risks, it provide a substantial increase in income

On the lateral excitation of shear modes in AlN layered resonators

In this paper we describe the fabrication and frequency characterization of different structures intended for the lateral excitation of shear modes in AlN c-axis-oriented films, which are at the same time designed to minimize the excitation of longitudinal modes. Laterally excited resonators were built on partially metallic (SiO2, W) and insulating (SiOC, Si3N4) acoustic mirrors built on silicon substrates, and on insulating mirrors (SiO2, TaOx) built on insulating glass plates. TiOx seed layers were used to stimulate the growth of highly c-axis oriented AlN films, which was confirmed by XRD and SAW measurements. Coplanar Mo electrodes of different geometries were defined on top of the AlN films to excite the shear modes. All the structures analyzed displayed a clear longitudinal mode, corresponding to an acoustic velocity of 11000 m/s, but a null or extremely weak shear response corresponding to a sound velocity of around 6350 m/s. The simulation of the frequency response based on Mason's model confirms that the shear resonance is extremely weak. The observed longitudinal modes are attributed either to the field applied between the electrodes and a conductive plane (metallic layer or Si substrate) or to the electric field parallel to the c-axis in the edges of the electrodes or in tilted grains. The low excitation of shear modes is attributed to the very low values of electric field strength parallel to the surface.

La barrera del análisis estructural y la representación gráfica en el desarrollo de los proyectos arquitectónicos: el caso de la Ópera de Sidney

En numerosas ocasiones a lo largo de la historia la imaginación de los creadores ha ido por delante de las posibilidades técnicas de cada momento. Así, muchas de estas nuevas ideas han requerido largos periodos de tiempo para materializarse como realidad construida, hasta que el desarrollo tecnológico e industrial hubo alcanzado un grado de madurez suficiente. En el campo de la arquitectura, estas limitaciones técnicas se han ido acotando paulatinamente hasta desembocar en la situación actual en la que cualquier planteamiento formal puede ser representado gráficamente y analizado desde un punto de vista estructural, superádose de este modo la barrera existente históricamente en el tratamiento de las formas. A lo largo del presente tesis doctoral se analiza cómo la formulación del Método de los Elementos Finitos en la década de los cincuenta y las curvas de Bézier en la década de los sesenta del siglo pasado y la posterior generalización de los ordenadores personales y de los programas informáticos asociados (C.A.D. y F.E.M. principalmente) en los estudios de arquitectura e ingeniería a partir de la década de los noventa, posibilitó el desarrollo de cualquier propuesta arquitectónica, por compleja que ésta fuese, provocando una verdadera revolución a nivel formal en el mundo de la arquitectura, especialmente en el campo de la edificación singular o icónica. Se estudia este proceso a través de ocho edificios; cuatro anteriores y otros tantos posteriores a la desaparición de la barrera anteriormente referida, establecida de forma simbólica en la década de los años ochenta del siglo XX: Frontón de Recoletos en Madrid, Edificio Seagram en Nueva York, Habitat ’67 en Montreal, Ópera de Sídney, museo Guggenheim de Bilbao, ampliación del Victoria & Albert Museum en Londres, tanatorio “Meiso no Mori” en Gifu y nueva sede de la CCTV en Pekín. De entre ellos, la Ópera de Sídney, obra del arquitecto danés Jørn Utzon, condensa gran parte de los aspectos relevantes investigados en relación a la influencia que los métodos de representación y análisis estructural ejercen en la concepción y construcción de las obras de arquitectura. Por este motivo y por considerarse un hito de la arquitectura a nivel global se toma como caso de estudio. La idea general del edificio, que data de 1956, se enmarca en una época inmediatamente anterior a la del desarrollo científico y tecnológico anteriormente referido. Esta ausencia de herramientas de diseño disponibles acordes a la complejidad formal de la propuesta planteada condicionó enormente la marcha del proyecto, dilatándose dramáticamente en el tiempo y disparándose su coste hasta el punto de que el propio arquitecto danés fue separado de las obras antes de su conclusión. Además, la solución estructural finalmente construida de las cubiertas dista mucho de la prevista por Utzon inicialmente. Donde él había imaginado unas finas láminas de hormigón flotando sobre el paisaje se materializó una estructura más pesada, formada por costillas pretensadas de hormigón con unas secciones notablemente mayores. La forma también debió ser modificada de modo ostensible respecto a la propuesta inicial. Si este edificio se pretendiese construir en la actualidad, con toda seguridad el curso de los acontecimientos se desarrollaría por senderos muy diferentes. Ante este supuesto, se plantean las siguientes cuestiones: ¿sería posible realizar un análisis estructural de la cubierta laminar planteada por Utzon inicialmente en el concurso con las herramientas disponibles en la actualidad?; ¿sería dicha propuesta viable estructuralmente?. A lo largo de las siguientes páginas se pretende dar respuesta a estas cuestiones, poniendo de relieve el impacto que los ordenadores personales y los programas informáticos asociados han tenido en la manera de concebir y construir edificios. También se han analizado variantes a la solución laminar planteada en la fase de concurso, a través de las cuales, tratando en la medida de lo posible de ajustarse a las sugerencias que Ove Arup y su equipo realizaron a Jørn Utzon a lo largo del dilatado proceso de proyecto, mejorar el comportamiento general de la estructura del edificio. Por último, se ha pretendido partir de cero y plantear, desde una perspectiva contemporánea, posibles enfoques metodológicos aplicables a la búsqueda de soluciones estructurales compatibles con la forma propuesta originalmente por Utzon para las cubiertas de la Ópera de Sídney y que nunca llegó a ser construida (ni analizada), considerando para ello los medios tecnológicos, científicos e industriales disponibles en la actualidad. Abstract On numerous occasions throughout history the imagination of creators has gone well beyond of the technical possibilities of their time. Many new ideas have required a long period to materialize, until the technological and industrial development had time to catch up. In the architecture field, these technical limitations have gradually tightened leading to the current situation in which any formal approach can be represented and analyzed from a structural point of view, thus concluding that the structural analysis and the graphical representation’s barrier in the development of architectural projects has dissappeared. Throughout the following pages it is examined how the development of the Finite Element Method in the fifties and the Bezier curves in the sixties of the last century and the subsequent spread of personal computers and specialized software in the architectural and engineering offices from the nineties, enabled the development of any architectural proposal independently of its complexity. This has caused a revolution at a formal level in architecture, especially in the field of iconic building. This process is analyzed through eight buildings, four of them before and another four after the disappearance of the above mentioned barrier, roughly established in the eighties of the last century: Fronton Recoletos in Madrid, Seagram Building in New York Habitat '67 in Montreal, Sydney Opera House, Guggenheim Museum Bilbao, Victoria & Albert Museum extension in London, Crematorium “Meiso no Mori” in Gifu and the new CCTV headquarters in Beijing. Among them, the Sydney Opera House, designed by Danish architect Jørn Utzon, condenses many of the main aspects previously investigated regarding the impact of representation methods and structural analysis on the design and construction of architectural projects. For this reason and also because it is considered a global architecture milestone, it is selected as a case study. The building’s general idea, which dates from 1956, is framed at a time immediately preceding the above mentioned scientific and technological development. This lack of available design tools in accordance with the proposal’s formal complexity conditioned enormously the project’s progress, leading to a dramatic delay and multiplying the final budget disproportionately to the point that the Danish architect himself was separated from the works before completion. Furthermore, the built structure differs dramatically from the architect’s initial vision. Where Utzon saw a thin concrete shell floating over the landscape a heavier structure was built, consisting of prestressed concrete ribs with a significantly greater size. The geometry also had to be modified. If this building were to built today, the course of events surely would walk very different paths. Given this assumption, a number of questions could then be formulated: Would it be possible to perform a structural analysis of Utzon’s initially proposed competition-free-ways roof’s geometry with the tools available nowadays?; Would this proposal be structurally feasable?. Throughout the following pages it is intended to clarify this issues, highlighting personal computers and associated software’s impact in building design and construction procedures, especially in the field of iconic building. Variants have also been analyzed for the laminar solution proposed in the competition phase, through which, trying as far as possible to comply with the suggestions that Ove Arup and his team did to Jørn Utzon along the lengthy process project, improving the overall performance of the building structure. Finally, we have started from scratch and analyzed, from a contemporary perspective, possible structural solutions compatible with Utzon’s Opera House’s original geometry and vision –proposal that was never built (nor even analyzed)-, taking into consideration the technological, scientific and industrial means currently available.

CsRAV1: a candidate gene for improving lignocellulosic biomass yield

Fast-growing tree species of Populus spp.,Salix spp. and Eucalyptus spp. are cultivated to produce wood in a short time. Poplars are cultivated with cycles of 15-18 years to obtain saw timber and peeler logs, but when grown as short -rotation coppice(SRC) to produce biomass, planting density increases and rotation is considerably reduced (3-5 years). In this regard, research efforts are focused in the identification of traits and loci that allow the generation of improved SRC biomass-yielding genotypes. Biomass yield is a highly complex trait as it is the combined outcome of many other complex traits, each under separate polygenic control. Among profitable biomass yield-related traits are the amount of sylleptic branching and the length of winter dormancy. In poplar and in a few other Salicaceae species some lateral buds grow out sylleptically, the same season in which they form without the need of an intervening rest period. Sylleptic branching in poplar increases branch number, leaf area and general growth of the tree in its early years, and is a reasonable predictor of coppice yield. On the other hand, the length of winter dormancy determines the extent of the growth period. Our group has characterized the RAV1 gene of Castanea sativa (CsRAV1), encoding a transcription factor of the subfamily RAV (Related to ABI3/VP1). CsRAV1 expression shows a marked seasonal pattern, being higher in autumn and winter both in stems and buds. We generated transgenic lines of the hybrid clone Populus tremulax P. alba INRA 717 1B4 constitutively expressing CsRAV 1. These CsRAV1-expressing poplars develop sylleptic branches only a few weeks after potting. In addition to the sylleptic branching phenotype, these trees show phenological features that could give rise to an extended growth period. We are currently assessing the phenotype and behavior of these transgenic trees in a field trial, and ultimately, we will evaluate the impact on lignocellulosic biomass quality and production.

Atelier Barani. Nice

I still remember the first time I saw photos of Marc Barani's Saint Pancrace Cemetery. ATELIER BARANI's project made such a lasting impression on me that I have followed hls work closely ever slnce. For the past six years, Barani has taught ln dlfferent places, most recently at the Speclal School of Architecture in Parls.

Visibility. Sobre la arquitectura de Emilio Tuñón y Luis Moreno Mansilla. Mansilla + Tuñón. Madrid

When I lncluded the then very young Emilio Tunon ln the book Young Spanish Architecture twenty years ago, he had just built a beautlful chapel in Alcala. Some people criticized this vote of confidence, as they saw it as a bit premature.