Super-high-frequency SAW resonators on AlN/Diamond
| Data(s) |
01/04/2012
|
|---|---|
| Resumo |
This letter describes the procedure to manufacture high-performance surface acoustic wave (SAW) resonators on AlN/diamond heterostructures working at frequencies beyond 10 GHz. In the design of SAW devices on AlN/diamond systems, the thickness of the piezoelectric layer is a key parameter. The influence of the film thickness on the SAW device response has been studied. Optimized thin films combined with advanced e-beam lithographic techniques have allowed the fabrication of one-port SAW resonators with finger width and pitch of 200 nm operating in the 10–14 GHz range with up to 36 dB out-of-band rejection. |
| Formato |
application/pdf |
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
E.T.S.I. Telecomunicación (UPM) |
| Relação |
http://oa.upm.es/22297/1/INVE_MEM_2012_99751.pdf http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6158573 info:eu-repo/semantics/altIdentifier/doi/10.1109/LED.2012.2183851 |
| Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
| Fonte |
IEEE Electron Device Letters, ISSN 0741-3106, 2012-04, Vol. 33, No. 4 |
| Palavras-Chave | #Electrónica #Física |
| Tipo |
info:eu-repo/semantics/article Artículo PeerReviewed |
