High-Acoustic-Impedance Tantalum Oxide Layers for Insulating Acoustic Reflectors

This work describes the assessment of the acoustic properties of sputtered tantalum oxide films intended for use as high-impedance films of acoustic reflectors for solidly mounted resonators operating in the gigahertz frequency range. The films are grown by sputtering a metallic tantalum target under different oxygen and argon gas mixtures, total pressures, pulsed dc powers, and substrate biases. The structural properties of the films are assessed through infrared absorption spectroscopy and X-ray diffraction measurements. Their acoustic impedance is assessed by deriving the mass density from X-ray reflectometry measurements and the acoustic velocity from picosecond acoustic spectroscopy and the analysis of the frequency response of the test resonators.

Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates

This work describes the electron-beam (e-beam) lithography process developed to manufacture nano interdigital transducers (IDTs) to be used in high frequency (GHz) surface acoustic wave (SAW) applications. The combination of electron-beam (e-beam) lithography and lift-off process is shown to be effective in fabricating well-defined IDT finger patterns with a line width below 100 nm with a good yield. Working with insulating piezoelectric substrates brings about e-beam deflection. It is also shown how a very thin organic anti-static layer works well in avoiding this charge accumulation during e-beam lithography on the resist layer. However, the use of this anti-static layer is not required with the insulating piezoelectric layer laying on a semiconducting substrate such as highly doped silicon. The effect of the e-beam dose on a number of different layers (of insulating, insulating on semiconducting, semiconducting, and conductive natures) is provided. Among other advantages, the use of reduced e-beam doses increases the manufacturing time. The principal aim of this work is to explain the interrelation among e-beam dose, substrate nature and IDT structure. An extensive study of the e-beam lithography of long IDT-fingers is provided, in a wide variety of electrode widths, electrode numbers and electrode pitches. It is worthy to highlight that this work shows the influence of the e-beam dose on five substrates of different conductive nature

Ta2O5/SiO2 insulating acoustic mirrors for AlN-based X-band BAW resonators

This work describes the performance of AlN-based bulk acoustic wave resonators built on top of insulating acoustic reflectors and operating at around 8 GHz. The acoustic reflectors are composed of alternate layers of amorphous Ta2O5and SiO2 deposited at room temperature by pulsed-DC reactive sputtering in Ar/O2 atmospheres. SiO2 layers have a porous structure that provides a low acoustic impedance of only 9.5 MRayl. Ta2O5 films exhibit an acoustic impedance of around 39.5 MRayl that was assessed by the picoseconds acoustic technique These values allow to design acoustic mirrors with transmission coefficients in the centre of the band lower than -40 dB (99.998 % of reflectance) with only seven layers. The resonators were fabricated by depositing a very thin AlN film onto an iridium bottom electrode 180 nm-thick and by using Ir or Mo layers as top electrode. Resonators with effective electromechanical coupling factors of 5.7% and quality factors at the antiresonant frequency around 600 are achieved.

Growth of AlN oriented films on insulating substrates.

This work describes the structural and piezoelectric assessment of aluminum nitride (AlN) thin films deposited by pulsed-DC reactive sputtering on insulating substrates. We investigate the effect of different insulating seed layers on AlN properties (crystallinity, residual stress and piezoelectric activity). The seed layers investigated, silicon nitride (Si3N4), silicon dioxide (SiO2), amorphous tantalum oxide (Ta2O5), and amorphous or nano-crystalline titanium oxide (TiO2) are deposited on glass plates to a thickness lower than 100 nm. Before AlN films deposition, their surface is pre-treated with a soft ionic cleaning, either with argon or nitrogen ions. Only AlN films grown of TiO2 seed layers exhibit a significant piezoelectric activity to be used in acoustic device applications. Pure c-axis oriented films, with FWHM of rocking curve of 6º, stress below 500 MPa, and electromechanical coupling factors measured in SAW devices of 1.25% are obtained. The best AlN films are achieved on amorphous TiO2 seed layers deposited at high target power and low sputtering pressure. On the other hand, AlN films deposited on Si3N4, SiO2 and TaOx exhibit a mixed orientation, high stress and very low piezoelectric activity, which invalidate their use in acoustic devices.

Recrystallization of amorphous nano-tracks and uniform layers generated by swift-ion-beam irradiation in lithium niobate.

The thermal annealing of amorphous tracks of nanometer-size diameter generated in lithium niobate (LiNbO3) by Bromine ions at 45 MeV, i.e., in the electronic stopping regime, has been investigated by RBS/C spectrometry in the temperature range from 250°C to 350°C. Relatively low fluences have been used (<1012 cm−2) to produce isolated tracks. However, the possible effect of track overlapping has been investigated by varying the fluence between 3×1011 cm−2 and 1012 cm−2. The annealing process follows a two-step kinetics. In a first stage (I) the track radius decreases linearly with the annealing time. It obeys an Arrhenius-type dependence on annealing temperature with activation energy around 1.5 eV. The second stage (II) operates after the track radius has decreased down to around 2.5 nm and shows a much lower radial velocity. The data for stage I appear consistent with a solid-phase epitaxial process that yields a constant recrystallization rate at the amorphous-crystalline boundary. HRTEM has been used to monitor the existence and the size of the annealed isolated tracks in the second stage. On the other hand, the thermal annealing of homogeneous (buried) amorphous layers has been investigated within the same temperature range, on samples irradiated with Fluorine at 20 MeV and fluences of ∼1014 cm−2. Optical techniques are very suitable for this case and have been used to monitor the recrystallization of the layers. The annealing process induces a displacement of the crystalline-amorphous boundary that is also linear with annealing time, and the recrystallization rates are consistent with those measured for tracks. The comparison of these data with those previously obtained for the heavily damaged (amorphous) layers produced by elastic nuclear collisions is summarily discussed.

High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

We report on properties of high quality ~60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be +/- 1.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution.

Characterization of Amorphous Tantalum Oxide for Insulating Acoustic Mirrors

This work describes the assessment of the acoustic properties of sputtered tantalum oxide films intended as high impedance films for the acoustic isolation of bulk acoustic wave devices operating in the GHz frequency range. The films are grown by sputtering a metallic tantalum target under different oxygen and argon gas mixtures, total pressures, pulsed DC powers and substrate bias. The structural properties of the films are assessed through infrared absorption spectroscopy and X-ray diffraction measurements. Their acoustic impedance is obtained after estimating the mass density by X-ray reflectometry measurements and the longitudinal acoustic velocity by analyzing the longitudinal λ/2 resonance induced in a tantalum oxide film inserted between an acoustic reflector and an AlN-based resonator. A second measurement of the sound velocity is achieved through picosecond acoustic spectroscopy.

Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy

The high lattice mismatch between III-nitride binaries (InN, GaN and AlN) remains a key problem to grow high quality III-nitride heterostructures. Recent interest has been focused on the growth of high-quality InAlN layers, with approximately 18% of indium incorporation, in-plane lattice-matched (LM) to GaN. While a lot of work has been done by metal-organic vapour phase epitaxy (MOVPE) by Carlin and co-workers, its growth by molecular beam epitaxy (MBE) is still in infancy

Experimental studies on transitional separated boundary layers

Separated transitional boundary layers appear on key aeronautical processes such as the flow around wings or turbomachinery blades. The aim of this thesis is the study of these flows in representative scenarios of technological applications, gaining knowledge about phenomenology and physical processes that occur there and, developing a simple model for scaling them. To achieve this goal, experimental measurements have been carried out in a low speed facility, ensuring the flow homogeneity and a low disturbances level such that unwanted transitional mechanisms are avoided. The studied boundary layers have been developed on a flat plate, by imposing a pressure gradient by means of contoured walls. They generate an initial acceleration region followed by a deceleration zone. The initial region is designed to obtain at the beginning of the deceleration the Blasius profile, characterized by its momentum thickness, and an edge boundary layer velocity, defining the problem characteristic velocity. The deceleration region is designed to obtain a linear evolution of the edge velocity, thereby defining the characteristic length of the problem. Several experimental techniques, both intrusive (hot wire anemometry, total pressure probes) as nonintrusive (PIV and LDV anemometry, high-speed filming), have been used in order to take advantage of each of them and allow cross-validation of the results. Once the boundary layer at the deceleration beginning has been characterized, ensuring the desired integral parameters and level of disturbance, the evolution of the laminar boundary layer up to the point of separation is studied. It has been compared with integral methods, and numerical simulations. In view of the results a new model for this evolution is proposed. Downstream from the separation, the flow near to the wall is configured as a shear layer that encloses low momentum recirculating fluid. The region where the shear layer remains laminar tends to be positioned to compensate the adverse pressure gradient associated with the imposed deceleration. Under these conditions, the momentum thickness remains almost constant. This laminar shear layer region extends up to where transitional phenomena appear, extension that scales with the momentum thickness at separation. These transitional phenomena are of inviscid type, similar to those found in free shear layers. The transitional region analysis begins with a study of the disturbances evolution in the linear growth region and the comparison of experimental results with a numerical model based on Linear Stability Theory for parallel flows and with data from other authors. The results’ coalescence for both the disturbances growth and the excited frequencies is stated. For the transition final stages the vorticity concentration into vortex blobs is found, analogously to what happens in free shear layers. Unlike these, the presence of the wall and the pressure gradient make the large scale structures to move towards the wall and quickly disappear under certain circumstances. In these cases, the recirculating flow is confined into a closed region saying the bubble is closed or the boundary layer reattaches. From the reattachment point, the fluid shows a configuration in the vicinity of the wall traditionally considered as turbulent. It has been observed that existing integral methods for turbulent boundary layers do not fit well to the experimental results, due to these methods being valid only for fully developed turbulent flow. Nevertheless, it has been found that downstream from the reattachment point the velocity profiles are self-similar, and a model has been proposed for the evolution of the integral parameters of the boundary layer in this region. Finally, the phenomenon known as bubble burst is analyzed. It has been checked the validity of existing models in literature and a new one is proposed. This phenomenon is blamed to the inability of the large scale structures formed after the transition to overcome with the adverse pressure gradient, move towards the wall and close the bubble. El estudio de capas límites transicionales con separación es de gran relevancia en distintas aplicaciones tecnológicas. Particularmente, en tecnología aeronáutica, aparecen en procesos claves, tales como el flujo alrededor de alas o álabes de turbomaquinaria. El objetivo de esta tesis es el estudio de estos flujos en situaciones representativas de las aplicaciones tecnológicas, ganando por un lado conocimiento sobre la fenomenología y los procesos físicos que aparecen y, por otra parte, desarrollando un modelo sencillo para el escalado de los mismos. Para conseguir este objetivo se han realizado ensayos en una instalación experimental de baja velocidad específicamente diseñada para asegurar un flujo homogéneo y con bajo nivel de perturbaciones, de modo que se evita el disparo de mecanismos transicionales no deseados. La capa límite bajo estudio se ha desarrollado sobre una placa plana, imponiendo un gradiente de presión a la misma por medio de paredes de geometría especificada. éstas generan una región inicial de aceleración seguida de una zona de deceleración. La región inicial se diseña para tener en al inicio de la deceleración un perfil de capa límite de Blasius, caracterizado por su espesor de cantidad de movimiento, y una cierta velocidad externa a la capa límite que se considera la velocidad característica del problema. La región de deceleración está concebida para que la variación de la velocidad externa a la capa límite sea lineal, definiendo de esta forma una longitud característica del problema. Los ensayos se han realizado explotando varias técnicas experimentales, tanto intrusivas (anemometría de hilo caliente, sondas de presión total) como no intrusivas (anemometrías láser y PIV, filmación de alta velocidad), de cara a aprovechar las ventajas de cada una de ellas y permitir validación cruzada de resultados entre las mismas. Caracterizada la capa límite al comienzo de la deceleración, y garantizados los parámetros integrales y niveles de perturbación deseados se procede al estudio de la zona de deceleración. Se presenta en la tesis un análisis de la evolución de la capa límite laminar desde el inicio de la misma hasta el punto de separación, comparando con métodos integrales, simulaciones numéricas, y proponiendo un nuevo modelo para esta evolución. Aguas abajo de la separación, el flujo en las proximidades de la pared se configura como una capa de cortadura que encierra una región de fluido recirculatorio de baja cantidad de movimiento. Se ha caracterizado la región en que dicha capa de cortadura permanece laminar, encontrando que se posiciona de modo que compensa el gradiente adverso de presión asociado a la deceleración de la corriente. En estas condiciones, el espesor de cantidad de movimiento permanece prácticamente constante y esta capa de cortadura laminar se extiende hasta que los fenómenos transicionales aparecen. Estos fenómenos son de tipo no viscoso, similares a los que aparecen en una capa de cortadura libre. El análisis de la región transicional comienza con un estudio de la evolución de las vii viii RESUMEN perturbaciones en la zona de crecimiento lineal de las mismas y la comparación de los resultados experimentales con un modelo numérico y con datos de otros autores. La coalescencia de los resultados tanto para el crecimiento de las perturbaciones como para las frecuencias excitadas queda demostrada. Para los estadios finales de la transición se observa la concentración de la vorticidad en torbellinos, de modo análogo a lo que ocurre en capas de cortadura libres. A diferencia de estas, la presencia de la pared y del gradiente de presión hace que, bajo ciertas condiciones, la gran escala se desplace hacia la pared y desaparezca rápidamente. En este caso el flujo recirculatorio queda confinado en una región cerrada y se habla de cierre de la burbuja o readherencia de la capa límite. A partir del punto de readherencia se tiene una configuración fluida en las proximidades de la pared que tradicionalmente se ha considerado turbulenta. Se ha observado que los métodos integrales existentes para capas límites turbulentas no ajustan bien a las medidas experimentales realizadas, hecho imputable a que no se obtiene en dicha región un flujo turbulento plenamente desarrollado. Se ha encontrado, sin embargo, que pasado el punto de readherencia los perfiles de velocidad próximos a la pared son autosemejantes entre sí y se ha propuesto un modelo para la evolución de los parámetros integrales de la capa límite en esta región. Finalmente, el fenómeno conocido como “estallido” de la burbuja se ha analizado. Se ha comprobado la validez de los modelos existentes en la literatura y se propone uno nuevo. Este fenómeno se achaca a la incapacidad de la gran estructura formada tras la transición para vencer el gradiente adverso de presión, desplazarse hacia la pared y cerrar la burbuja.

On the lateral excitation of shear modes in AlN layered resonators

In this paper we describe the fabrication and frequency characterization of different structures intended for the lateral excitation of shear modes in AlN c-axis-oriented films, which are at the same time designed to minimize the excitation of longitudinal modes. Laterally excited resonators were built on partially metallic (SiO2, W) and insulating (SiOC, Si3N4) acoustic mirrors built on silicon substrates, and on insulating mirrors (SiO2, TaOx) built on insulating glass plates. TiOx seed layers were used to stimulate the growth of highly c-axis oriented AlN films, which was confirmed by XRD and SAW measurements. Coplanar Mo electrodes of different geometries were defined on top of the AlN films to excite the shear modes. All the structures analyzed displayed a clear longitudinal mode, corresponding to an acoustic velocity of 11000 m/s, but a null or extremely weak shear response corresponding to a sound velocity of around 6350 m/s. The simulation of the frequency response based on Mason's model confirms that the shear resonance is extremely weak. The observed longitudinal modes are attributed either to the field applied between the electrodes and a conductive plane (metallic layer or Si substrate) or to the electric field parallel to the c-axis in the edges of the electrodes or in tilted grains. The low excitation of shear modes is attributed to the very low values of electric field strength parallel to the surface.

Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers

Reduced performance in Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) as a result of self-heating has been well-documented. A new approach, termed “diamond-before-gate" is shown to improve the thermal budget of the deposition process and enables large area diamond without degrading the gate metal NCD capped devices had a 20% lower channel temperature at equivalent power dissipation.

Polynomial approximation using particle swarm optimization of lineal enhanced neural networks with no hidden layers.

This paper presents some ideas about a new neural network architecture that can be compared to a Taylor analysis when dealing with patterns. Such architecture is based on lineal activation functions with an axo-axonic architecture. A biological axo-axonic connection between two neurons is defined as the weight in a connection in given by the output of another third neuron. This idea can be implemented in the so called Enhanced Neural Networks in which two Multilayer Perceptrons are used; the first one will output the weights that the second MLP uses to computed the desired output. This kind of neural network has universal approximation properties even with lineal activation functions. There exists a clear difference between cooperative and competitive strategies. The former ones are based on the swarm colonies, in which all individuals share its knowledge about the goal in order to pass such information to other individuals to get optimum solution. The latter ones are based on genetic models, that is, individuals can die and new individuals are created combining information of alive one; or are based on molecular/celular behaviour passing information from one structure to another. A swarm-based model is applied to obtain the Neural Network, training the net with a Particle Swarm algorithm.

Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy

Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of MgxZn1−xO were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of Ec − 1.4 eV, 2.1 eV, 2.6 V, and Ev + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at Ec − 2.1 eV, Ev + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at Ev + 0.3 eV and Ec − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the Ev + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the Ec − 1.4 eV and Ec − 2.6 eV levels in Mg alloyed samples.

Intermediate Band to Conduction Band optical absorption in ZnTe:O

ZnTe doped with high concentrations of oxygen has been proposed in previous works as intermediate band (IB) material for photovoltaic applications. The existence of extra optical transitions related to the presence of an IB has already been demonstrated in this material and it has been possible to measure the absorption coefficient of the transitions from the valence band (VB) to the IB. In this work we present the first measurement of the absorption coefficient associated to transitions from the IB to the conduction band (CB) in ZnTe:O. The samples used are 4 ?m thick ZnTe layers with or without O in a concentration ~ 1019 cm-3, which have been grown on semi-insulating GaAs substrates by molecular beam epitaxy (MBE). The IB-CB absorption coefficient peaks for photon energies ~ 0.4 eV. It is extracted from reflectance and transmittance spectra measured using Fourier Transform Infrared (FTIR) spectroscopy. Under typical FTIR measurement conditions (low light intensity, broadband spectrum) the absorption coefficient in IB-to-CB transitions reaches 700 cm-1. This is much weaker than the one observed for VB-IB absorption. This result is consistent with the fact that the IB is expected to be nearly empty of electrons under equilibrium conditions in ZnTe(:O). The absorption for VB to IB transitions is also observed in the same samples through reflectance measurements performed in the visible range using a monochromator. These measurements are compared with the quantum efficiency (QE) from solar cells fabricated under similar conditions.

Automatized connection of the layers of planar transformers with parallel windings to improve the component behavior

Transformers with parallel windings are commonly used to reduce the losses in the windings. Windings losses depend on the winding positioning and the frequency effects because each winding affects the current sharing of itself and the neighboring windings. In this paper a methodology for determining the connections of the parallel windings that reduces the power losses (and temperature) in the windings of multi-winding transformers is presented. Other applications of the method, such as balanced current sharing and voltage drop reduction are also explored. In this paper a methodology for determining the connections of the parallel windings that reduces the power losses (and temperature) in the windings of multi-winding transformers is presented. Other applications of the method, such as balanced current sharing and voltage drop reduction are also explored.