La forma del agua. Temas e invariantes en el jardín y el paisaje. Análisis de casos (Holanda-España, 1548-1648)

El espacio geográfico, entendido como territorio que da soporte a la vida y a la civilización, ha estado siempre fuertemente supeditado a la presencia de agua. Desde la Prehistoria el hombre otorgó al agua, junto a otros elementos que aseguraban o protegían su vida, un valor superior, por encima de lo humano. Paralelamente y de manera natural, el jardín, en sus inicios en estrecha relación con la agricultura y con el paisaje, fue el ámbito idóneo para la creación de nuevas formas acuáticas artificiales. Este proceso dio lugar a un extenso repertorio de formas compositivas que parece que tuvo en el Renacimiento un punto de inflexión, en el que se observa como la mayoría de recursos y configuraciones básicas del agua estaban ya plenamente establecidas. Esta evolución y sus resultados ha sido el objeto de la primera parte de la tesis: su objetivo ha sido analizar cómo el agua configura, cualifica o puede llegar a construir el jardín y el territorio en el que se inserta, así como establecer las posibles relaciones entre estos dos ámbitos de estudio. Aunque la historia es su fundamento, el planteamiento aquí ha sido más bien conceptual; estudiando los componentes acuáticos desde un punto de vista fundamentalmente compositivo. Esta indagación previa ha sido indispensable para llegar a entender en profundidad los modos en los que el agua se muestra en el jardín y en el paisaje renacentista y manierista, momentos en que se insertan los dos casos de estudio que constituyen la segunda parte de la tesis. Sin caer en un determinismo geográfico extremo, puede admitirse que el jardín, como manifestación cultural intrínsecamente ligada al entorno, depende fuertemente del territorio en el que se asienta; hecho particularmente evidente en aquellas regiones en las que su especial geografía ha sido un claro factor condicionante de su historia. Por ello, Holanda y España han sido las dos localizaciones elegidas para profundizar en este estudio; no tanto por su estrecha relación política y cultural, sino por su profundo y sugerente contraste de medio físico y climático. La Península Ibérica, geográficamente el término del mundo conocido en Occidente hasta el final de la Edad Media, y por esta circunstancia convertida en destino, en territorio de permanencia y fusión, estará además supeditada en la mayoría de su territorio a la falta de agua, siendo a la vez heredera directa del universo y la tradición del jardín meridional originario de Oriente. En el extremo opuesto, Holanda, espacio de transición entre el mar y la tierra firme “real”, es un territorio permeado de humedad y surcado con generosidad por grandes ríos. El país, con una relación ambivalente con el agua, unas veces como amenaza y otras como fuente de nuevas oportunidades, será por el contrario especialmente favorable para el desarrollo de un modelo de jardín septentrional. Un jardín del norte, que no obstante, no surgirá de despejar los bosques, como en el arquetipo nórdico, sino que crecerá sobre planicies antes saturadas de agua o directamente anegadas. El marco temporal de los dos casos concretos ha considerado como fecha inicial 1548, momento en el que Felipe II, aún príncipe, realizó su primer viaje a los Países Bajos, y entró en contacto con el modelo holandés. La extensa producción posterior de jardines de Felipe II, siempre con el agua como protagonista, tuvo como destacado referente la adaptación al suelo y la geografía hispánicos de dicho modelo. Como fecha final se fija 1648, justo un siglo después, fecha coincidente con la firma de la Paz de Westfalia, tratado que supone la total reorganización política del territorio europeo y la pérdida de la hegemonía española en Europa. En Holanda sólo dos años después nacerá Guillermo III de Orange, estatúder de las Provincias Unidas, también futuro rey de Inglaterra, Escocia e Irlanda. Para entonces en Holanda ya se había asistido al desarrollo de un arte propio de jardín, íntimamente ligado al agua, sorprendentemente no demasiado bien conocido y que será uno de los temas de esta investigación. Finalmente, se propone una lectura conjunta de toda esta serie de intervenciones que tienen como argumento el agua, en la que se integra la información procedente de distintos campos de estudio, cada una con su metodología particular. El resultado es una tesis en la que el jardín y el territorio son tratados desde un nuevo y enriquecedor punto de vista. ABSTRACT Geographical space, understood as the territory that provides support to human life and civilization, has always been strongly subjected to the presence of water. From Prehistory man gave to water, along with other elements that ensured or protected life, a higher value than the merely human. At the same time and in a natural way, the garden, in its beginnings with a close relationship with agriculture and landscape, soon developed as the appropriate ground for the creation of new artificial aquatic forms, in a process that seems to have a turning point in the Renaissance, when most of the basic waterworks and resources were already fully established. This development and its outcomes are the subjects of the first part of the thesis: its scope has been to analyse how water configures, qualifies and might even help to construct the garden or landscape attached to it; and to establish the possible links between these two fields of study. Although history based, the point of view here is mainly conceptual, studying the water components understood as composite elements. This exploratory research has been essential to deeply understand the water patterns shown in the Renaissance and Mannerist garden and landscape, periods in which the two case studies are inserted. Without falling in extreme determinism, it can be accepted however, that garden, as a cultural expression linked to environment, is strongly dependant on territorial setting; something particularly evident in those areas where specific geography has been a clear history conditioning factor. This is the reason that leads to choose the Netherlands and Spain to deepen this study, no so much for their interesting cultural and politics relations as for the suggestive and profound contrast of their physical environment and climate. The Iberian Peninsula, geographically the limit of the known world in Occident until the end of the Medium Age, and by this circumstance understood as endpoint, more a destination than a crossroad, a territory of permanence and fusion, but also subjected to water shortage; is thus associated with the universe and tradition of the meridional garden imported from Orient. In the opposite, the Netherlands, a transitional space between the sea and the “real” firm land, is a territory permeated by water and crossed by big rivers. Always with an ambivalent relationship with water, sometimes seen as a threat and sometimes as a source of new opportunities, it was in the other hand the adequate land for the development of a special model of Northern garden. A garden that will not arise, however, from the clearing of woods as in the Nordic archetype, but that will grow on plains originally saturated of water or directly waterlogged. The timeframe of the two cases has 1548 as the initial year, moment in which Philip II, yet prince, made his first trip to the Low Lands and imbibed the Dutch garden model. The later and bountiful garden works of the king, always with the water as the main focus, adapted the imported model to the Spanish ground and geography. The final date is fixed in 1648, just a century after, in coincidence with the Westfalia Peace; a treaty that implied the total political reorganization of the European territory and the end of the Spanish hegemony in the continent. In Holland, only two years later, William III of Orange, Stadtholder of the United Provinces and also future king of England, Scotland and Ireland, was born. But by then the Netherlands had developed an own garden art, closely linked to water. This type garden, surprisingly not very well known, and its relationship with water, will be other of the addressing questions of this work. Finally, the investigation merges the different interventions that have water as an argument, integrating all the fields considered with their particular methodological approaches. The final result is a thesis in which garden and territory are treated from a new and enriching perspective.

Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

We investigated the atomic surface properties of differently prepared silicon and germanium (100) surfaces during metal-organic vapour phase epitaxy/chemical vapour deposition (MOVPE/MOCVD), in particular the impact of the MOVPE ambient, and applied reflectance anisotropy/difference spectroscopy (RAS/RDS) in our MOVPE reactor to in-situ watch and control the preparation on the atomic length scale for subsequent III-V-nucleation. The technological interest in the predominant opto-electronic properties of III-V-compounds drives the research for their heteroepitaxial integration on more abundant and cheaper standard substrates such as Si(100) or Ge(100). In these cases, a general task must be accomplished successfully, i.e. the growth of polar materials on non-polar substrates and, beyond that, very specific variations such as the individual interface formation and the atomic step structure, have to be controlled. Above all, the method of choice to grow industrial relevant high-performance device structures is MOVPE, not normally compatible with surface and interface sensitive characterization tools, which are commonly based on ultrahigh vacuum (UHV) ambients. A dedicated sample transfer system from MOVPE environment to UHV enabled us to benchmark the optical in-situ spectra with results from various surfaces science instruments without considering disruptive contaminants. X-ray photoelectron spectroscopy (XPS) provided direct observation of different terminations such as arsenic and phosphorous and verified oxide removal under various specific process parameters. Absorption lines in Fourier-transform infrared (FTIR) spectra were used to identify specific stretch modes of coupled hydrides and the polarization dependence of the anti-symmetric stretch modes distinguished different dimer orientations. Scanning tunnelling microscopy (STM) studied the atomic arrangement of dimers and steps and tip-induced H-desorption proved the saturation of dangling bonds after preparati- n. In-situ RAS was employed to display details transiently such as the presence of H on the surface at lower temperatures (T <; 800°C) and the absence of Si-H bonds at elevated annealing temperature and also surface terminations. Ge buffer growth by the use of GeH4 enables the preparation of smooth surfaces and leads to a more pronounced amplitude of the features in the spectra which indicates improvements of the surface quality.

Optimizing Bottom Subcells for III-V-on-Si MultiJunction Solar Cells

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. Such integration would offer a cost breakthrough for photovoltaic technology, unifying the low cost of silicon and the efficiency potential of III-V multijunction solar cells. In this study, we analyze several factors influencing the performance of the bottom subcell of this dual-junction, namely, 1) the formation of the emitter as a result of the phosphorus diffusion that takes place during the prenucleation temperature ramp and during the growth of the III-V layers; 2) the degradation in surface morphology during diffusion; and 3) the quality needed for the passivation provided by the GaP layer on the emitter.

Integration of III-V materials on Silicon Substrates for Multi-junction Solar Cell Applications

The work presented here aims to reduce the cost of multijunction solar cell technology by developing ways to manufacture them on cheap substrates such as silicon. In particular, our main objective is the growth of III-V semiconductors on silicon substrates for photovoltaic applications. The goal is to create a GaAsP/Si virtual substrates onto which other III-V cells could be integrated with an interesting efficiency potential. This technology involves several challenges due to the difficulty of growing III-V materials on silicon. In this paper, our first work done aimed at developing such structure is presented. It was focused on the development of phosphorus diffusion models on silicon and on the preparation of an optimal silicon surface to grow on it III-V materials.

XPS as Characterization Tool for PV: From the Substrate to Complete III-V Multijunction Solar Cells

This contribution aims to illustrate the potential of the X-ray photoelectron spectroscopy (XPS) technique as a tool to analyze different parts of a solar cell (surface state, heterointerfaces, profile composition of ohmic contacts, etc). Here, the analysis is specifically applied to III-V multijunction solar cells used in concentrator systems. The information provided from such XPS analysis has helped to understand the physico-chemical nature of these surfaces and interfaces, and thus has guided the technological process in order to improve the solar cell performance.

Impact of MOVPE Environment on Silicon Substrates for III-V-on-Si Multijunction Solar Cells

With the final goal of integrating III-V materials to silicon for tandem solar cells, the influence of the metal-organic vapor phase epitaxy (MOVPE) environment on the minority carrier properties of silicon wafers has been evaluated. These properties will essentially determine the photovoltaic performance of the bottom cell in a III-V-on-Si tandem solar cell device. A comparison of the base minority carrier lifetimes obtained for different thermal processes carried out in a MOVPE reactor on Czochralski silicon wafers has been carried out. The effect of the formation of the emitter by phosphorus diffusion has also been evaluated.

Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III?V materials on silicon for photovoltaic applications. When manufacturing a multi-junction solar cell on silicon, one of the first processes to be addressed is the development of the bottom subcell and, in particular, the formation of its emitter. In this study, we analyze, both experimentally and by simulations, the formation of the emitter as a result of phosphorus diffusion that takes place during the first stages of the epitaxial growth of the solar cell. Different conditions for the Metal-Organic Vapor Phase Epitaxy (MOVPE) process have been evaluated to understand the impact of each parameter, namely, temperature, phosphine partial pressure, time exposure and memory effects in the final diffusion profiles obtained. A model based on SSupremIV process simulator has been developed and validated against experimental profiles measured by ECV and SIMS to calculate P diffusion profiles in silicon formed in a MOVPE environment taking in consideration all these factors.

In situ control of Si(100) and Ge(100) surface preparation for the heteroepitaxy of III-V solar cell architectures

Si(100) and Ge(100) substrates essential for subsequent III-V integration were studied in the hydrogen ambient of a metalorganic vapor phase epitaxy reactor. Reflectance anisotropy spectroscopy (RAS) enabled us to distinguish characteristic configurations of vicinal Si(100) in situ: covered with oxide, cleaned by thermal removing in H2, and terminated with monohydrides when cooling in H2 ambient. RAS measurements during cooling in H2 ambient after the oxide removal process revealed a transition from the clean to the monohydride terminated Si(100) surface dependent on process temperature. For vicinal Ge(100) we observed a characteristic RA spectrum after annealing and cooling in H2 ambient. According to results from X-ray photo electron spectroscopy and Fourier-transform infrared spectroscopy the spectrum corresponds to the monohydride terminated Ge(100) surface.

ARXPS analysis of a GaAs/GaInP heterointerface with application in III-V multijunction solar cells

In this contribution, angle-resolved X-ray photoelectron spectroscopy is used to explore the extension and nature of a GaAs/GaInP heterointerface. This bilayer structure constitutes a very common interface in a multilayered III-V solar cell. Our results show a wide indium penetration into the GaAs layer, while phosphorous diffusion is much less important. The physico-chemical nature of such interface and its depth could deleteriously impact the solar cell performance. Our results probe the formation of spurious phases which may profoundly affect the interface behavior.

Optimization of the silicon subcell for III-V on silicon multijunction solar cells: key differences with conventional silicon technology

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

Preliminary temperature Accelerated Life Test (ALT) on III-V commercial concentrator triple-junction solar cells

A quantitative temperature accelerated life test on sixty GaInP/GaInAs/Ge triple-junction commercial concentrator solar cells is being carried out. The final objective of this experiment is to evaluate the reliability, warranty period, and failure mechanism of high concentration solar cells in a moderate period of time. The acceleration of the degradation is realized by subjecting the solar cells at temperatures markedly higher than the nominal working temperature under a concentrator Three experiments at three different temperatures are necessary in order to obtain the acceleration factor which relates the time at the stress level with the time at nominal working conditions. . However, up to now only the test at the highest temperature has finished. Therefore, we can not provide complete reliability information but we have analyzed the life data and the failure mode of the solar cells inside the climatic chamber at the highest temperature. The failures have been all of them catastrophic. In fact, the solar cells have turned into short circuits. We have fitted the failure distribution to a two parameters Weibull function. The failures are wear-out type. We have observed that the busbar and the surrounding fingers are completely deteriorate

Influence of PH3 exposure on silicon substrate morphology in the MOVPE growth of III-V on silicon multijunction solar cells

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. One of the first issues to be considered in the development of this structure will be the strategy to create the silicon emitter of the bottom subcell. In this study, we explore the possibility of forming the silicon emitter by phosphorus diffusion (i.e. exposing the wafer to PH3 in a MOVPE reactor) and still obtain good surface morphologies to achieve a successful III-V heteroepitaxy as occurs in conventional III-V on germanium solar cell technology. Consequently, we explore the parameter space (PH3 partial pressure, time and temperature) that is needed to create optimized emitter designs and assess the impact of such treatments on surface morphology using atomic force microscopy. Although a strong degradation of surface morphology caused by prolonged exposure of silicon to PH3 is corroborated, it is also shown that subsequent anneals under H-2 can recover silicon surface morphology and minimize its RMS roughness and the presence of pits and spikes.

In-situ and Ex-situ characterization of III-V semiconductor materials and solar cells upon 10 MEV proton irradiation

In this work we present the results and analysis of a 10 MeV proton irradiation experiment performed on III-V semiconductor materials and solar cells. A set of representative devices including lattice-matched InGaP/GaInAs/Ge triple junction solar cells and single junction GaAs and InGaP component solar cells and a Ge diode were irradiated for different doses. The devices were studied in-situ before and after each exposure at dark and 1 sun AM0 illumination conditions, using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V measurements. Furthermore, numerical simulation of the devices using D-AMPS-1D code together with calculations based on the TRIM software were performed in order to gain physical insight on the experimental results. The experiment also included the proton irradiation of an unprocessed Ge solar cell structure as well as the irradiation of a bare Ge(100) substrate. Ex-situ material characterization, after radioactive deactivation of the samples, includes Raman spectroscopy and spectral reflectivity.

In situ control of the GE(100)surface domain structure for III-V multijunction solar cells

Vicinal Ge(100) is the common substrate for state of the art multi-junction solar cells grown by metal-organic vapor phase epitaxy (MOVPE). While triple junction solar cells based on Ge(100) present efficiencies mayor que 40%, little is known about the microscopic III-V/Ge(100) nucleation and its interface formation. A suitable Ge(100) surface preparation prior to heteroepitaxy is crucial to achieve low defect densities in the III-V epilayers. Formation of single domain surfaces with double layer steps is required to avoid anti-phase domains in the III-V films. The step formation processes in MOVPE environment strongly depends on the major process parameters such as substrate temperature, H2 partial pressure, group V precursors [1], and reactor conditions. Detailed investigation of these processes on the Ge(100) surface by ultrahigh vacuum (UHV) based standard surface science tools are complicated due to the presence of H2 process gas. However, in situ surface characterization by reflection anisotropy spectroscopy (RAS) allowed us to study the MOVPE preparation of Ge(100) surfaces directly in dependence on the relevant process parameters [2, 3, 4]. A contamination free MOVPE to UHV transfer system [5] enabled correlation of the RA spectra to results from UHV-based surface science tools. In this paper, we established the characteristic RA spectra of vicinal Ge(100) surfaces terminated with monohydrides, arsenic and phosphorous. RAS enabled in situ control of oxide removal, H2 interaction and domain formation during MOVPE preparation.

Bradyrhizobium sp. lmjc necesita un sistema de secreción tipo III para nodular eficientemente al altramuz valenciano (Lupinus Mariae-Josephae).

La mayoría de las leguminosas establecen una simbiosis con bacterias denominadas rizobios que fijan dinitrógeno en estructuras especializadas llamadas nódulos a cambio de fotosintatos. Existen varios elementos que hacen esta interacción específica y efectiva, entre ellos se encuentra la presencia, en algunos rizobios, de estructuras tubulares que introducen proteínas de la bacteria (efectores) en el citoplasma de células vegetales. En nuestro estudio de la interacción de la bacteria designada como Bradyrhizobium sp. LmjC con el altramuz valenciano L. mariae-josephae Pascual, hemos demostrado que existe uno de esos sistemas de secreción de tipo III y que éste es esencial para una simbiosis eficiente. Además hemos iniciado la caracterización de un posible efector denominado NopE y por último estamos estudiando otros rasgos fenotípicos de dicha bacteria como su resistencia a antibióticos, su crecimiento con distintas fuentes de carbono, su tiempo de generación y otras pruebas bioquímicas como la actividad ureasa.