Functionalism and Caprice in Stonecutting. The Case of the Nativity Chapel in Burgos Cathedral

Starting from the inaugural text of Philibert de L'Orme, stereotomic treatises and manuscripts are subject to the opposing forces of reason and fancy. The Nativity Chapel in Burgos Cathedral provides an outstanding case study on this subject. It was built in 1571-1582 by Martín de Bérriz and Martín de la Haya, using an oval vault resting on trumpet squinches to span a rectangular bay. Bed joints and rib axes are not planar curves, as usual in oval vaults. This warping is not capricious; we shall argue that it is the outcome of a systematic tracing method. As a result of this process, the slope of the bed joints increases slightly in the first courses, but stays fairly constant after the third course; this solution prevents the upper courses from slipping. Thus, in the Nativity Chapel of Burgos Cathedral, the constraints of masonry construction fostered a singular solution verging on capriccio. It is also worthwhile to remark that the warping of the joints is not easily appreciable to the eye and that the tracing process does not seem to start from a previous conception of the resulting form. All this suggests that we should be quite careful when talking about the whimsical character of Late Gothic and Early Renaissance; in some occasions, apparent caprice is the offspring of practical thinking.

Polypropylene fiber-reinforced self-compacting concrete for the reconstruction of the cathedral of La Laguna, Canary Island, Spain

High performance materials are needed for the reconstruction of such a singular building as a cathedral, since in addition to special mechanical properties, high self compact ability, high durability and high surface quality, are specified. Because of the project’s specifications, the use of polypropylene fiber-reinforced, self-compacting concrete was selected by the engineering office. The low quality of local materials and the lack of experience in applying macro polypropylene fiber for structural reinforcement with these components materials required the development of a pretesting program. To optimize the mix design, performance was evaluated following technical, economical and constructability criteria. Since the addition of fibers reduces concrete self-compactability, many trials were run to determine the optimal mix proportions. The variables introduced were paste volume; the aggregate skeleton of two or three fractions plus limestone filler; fiber type and dosage. Two mix designs were selected from the preliminary results. The first one was used as reference for self-compactability and mechanical properties. The second one was an optimized mix with a reduction in cement content of 20 kg/m3and fiber dosage of 1 kg/m3. For these mix designs, extended testing was carried out to measure the compression and flexural strength, modulus of elasticity, toughness, and water permeability resistance

The Ciborium or Lantern Tower of Valencia Cathedral: Geometry, Construction and Stability

Early 18th century treatise writer Tomas Vicente Tosca1 includes in his Tratado de la montea y cortes de Canteria [On Masonry Design and Stone Cutting], what is an important documentary source about the lantern of Valencia Cathedral. Tosca writes about this lantern as an example of vaulting over cross arches without the need of buttresses. A geometrical description is followed by an explanation of the structural behavior which manifests his deep understanding of the mechanics of masonry structures. He tries to demonstrate the absence of buttresses supporting his thesis on the appropriate distribution of loads which will reduce the "empujos" [horizontal thrusts] to the point of not requiring more than the thickness of the walls to stand (Tosca [1727] 1992, 227-230). The present article2 assesses T osca' s appreciation studying how loads and the thrusts they generate are transmitted through the different masonry elements that constitute this ciborium. In order to do so, we first present a geometrical analysis and make considerations regarding its materials and construction methods to, subsequently, analyze its stability adopting an equilibrium approach within the theoretical framework of the lower bound limit analysis.

The Ciborium or Lantern Tower of Valencia Cathedral: Geometry, Construction and Stability

Early 18th century treatise writer Tomas Vicente Tosca1 includes in his Tratado de la montea y cortes de Canteria [On Masonry Design and Stone Cutting], what is an important documentary source about the lantern of Valencia Cathedral. Tosca writes about this lantern as an example of vaulting over cross arches without the need of buttresses. A geometrical description is followed by an explanation of the structural behavior which manifests his deep understanding of the mechanics of masonry structures. He tries to demonstrate the absence of buttresses supporting his thesis on the appropriate distribution of loads which will reduce the "empujos" [horizontal thrusts] to the point of not requiring more than the thickness of the walls to stand (Tosca [1727] 1992, 227-230). The present article2 assesses T osca' s appreciation studying how loads and the thrusts they generate are transmitted through the different masonry elements that constitute this ciborium. In order to do so, we first present a geometrical analysis and make considerations regarding its materials and construction methods to, subsequently, analyze its stability adopting an equilibrium approach within the theoretical framework of the lower bound limit analysis.

The Irregular Ribbed Vault of the Sacristy of the Cathedral of Saint-Jean Baptiste in Perpignan

The vault of the sacristy of the Cathedral of Saint-Jean Baptiste in Perpignan (France), constructed by the Majorcan architect Guillem Sagrera between 1433 and 1447, is an outstanding, yet strikingly unknown, example of rib vaulting. This paper analyzes the overall construction of the form of the vault, characterized by its highly irregular perimeter, with particular attention to an isolated decorated corbel which solves the problem of the wall support of a group of six ribs and is in stark contrast with the rest of the supports, which are completely unadorned. Given the extreme rigour of Sagrera in all his works (and this one in particular), this apparent “capriccio” must be justified not only by decorative or formal requirements, but also by the constructive logic of Gothic vaulting system

A landscape architectural design approach:the restoration of the Angel Tower and the Cloister of the Cathedral of Cuenca.

Este artículo trata de analizar la reciente evolución de los conceptos sobre intervención en el Patrimonio Cultural. Para ello utiliza como modelo el proyecto metodológico aplicado sobre las dos últimas actuaciones efectuadas en la Catedral de Cuenca. La Carta de Atenas, 1931, que estableció las bases de la modernidad sobre las dos trayectorias de espacio y tiempo, concuerdan hoy después de casi un siglo, recuperando su punto de encuentro. El artículo básicamente valora el potencial que los proyectos contemporáneos de intervención en el patrimonio pueden ofrecer cuando estudias su trayectoria en el paisaje. En orden a certificar sus transformaciones desde la actualidad, el singular monumento de la Catedral de Cuenca, utilizado como modelo, nos aporta a través de sus materiales y morfología la memoria secular que nos informa de sus técnicas constructivas y valores sociales. Este modelo abre un diálogo entre teoría y práctica reflejado a través de los trabajos de restauración aplicados. Después de treinta años de experiencia restauradora llevada a cabo por los autores, las dos últimas intervenciones que son minuciosamente expuestas, revelan algunas nuevas estrategias de aplicación en el proyecto de intervención.

Cathedral Square

Collaborator: Modesto Sánchez Morales

InN/GaN heterojunction electrical behavior

Indium nitride (InN) has been the subject of intense research in recent years. Some of its most attractive features are its excellent transport properties such as its small band edge electron effective mass, high electron mobilities and peak drift velocities, and high frequency transient drift velocity oscillations [1]. These suggest enormous potential applications for InN in high frequency electronic devices. But to date the high unintentional bulk electron concentration (n~1018 cm-3) of undoped InN samples and the surface electron accumulation layer make it a hard task to create a reliable metalsemiconductor Schottky barrier. Some attempts have been made to overcome this problem by means of material oxidation [2] or deposition of insulators [3]. In this work we present a way to obtain an electrical rectification behaviour by means of heterojunction growth. Due to the big band gap differences among nitride semiconductors, it’s possible to create a structure with high band offsets. In InN/GaN heterojunctions, depending on the GaN doping, the magnitude of conduction and valence band offset are critical parameters which allow distinguishing among different electrical behaviours. The earliest estimate of the valence band offset at an InN–GaN heterojunction in a wurtzite structure was measured to be ~0.85 eV [4], while the Schottky barrier heights were determined to be ~ 1,4 eV [5].We grew In-face InN layer with varying thickness (between 150 nm and 1 mm) by plasma assisted molecular beam epitaxy (PA-MBE) on GaNntemplates (GaN/Al2O3), with temperatures ranging between 300°C and 450°C. The different doping in GaN template (Si doping, Fe doping and Mg doping) results in differences in band alignments of the two semiconductors changing electrical barriers for carriers and consequently electrical conduction behaviour. The processing of the devices includes metallization of the ohmic contacts on InN and GaN, for which we used Ti/Al/Ni/Au. Whereas an ohmic contact on InN is straightforward, the main issue was the fabrication of the contact on GaN due to the very low decomposition temperature of InN. A standard ohmic contact on GaN is generally obtained by high temperature rapid thermal annealing (RTA), typically done between 500ºC and 900ºC[6]. In this case, the limitation due to the presence of In-face InN imposes an upper limit on the temperature for the thermal annealing process and ohmic contact formation of about 450°C. We will present results on the morphology of the InN layers by X-Ray diffraction and SEM, and electrical measurements, in particular current-voltage and capacitance-voltage characteristics.

Infrastructure and Workflow for the Formal Evaluation of Semantic Search Technologies

This paper describes an infrastructure for the automated evaluation of semantic technologies and, in particular, semantic search technologies. For this purpose, we present an evaluation framework which follows a service-oriented approach for evaluating semantic technologies and uses the Business Process Execution Language (BPEL) to define evaluation workflows that can be executed by process engines. This framework supports a variety of evaluations, from different semantic areas, including search, and is extendible to new evaluations. We show how BPEL addresses this diversity as well as how it is used to solve specific challenges such as heterogeneity, error handling and reuse

Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted

Selective area growth (SAG) of GaN nanocolumns (NCs), making use of patterned or masked (nanoholes) substrates, yields a periodic, homogeneous distribution of nanostructures, that makes their processing much easier compared with self-assembled ones. In addition, the control on the diameter and density of NCs avoids dispersion in the electrooptical characteristics of the heterostructures based on this type of material (embedded InGaN/GaN quantum disks for example). Selective area growth using a mask with nanohole arrays has been demonstrated by rf-plasma-assisted MBE [1, 2].

Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT's reliability

AlGaN/GaN high electron mobility transistors (HEMT) are key devices for the next generation of high-power, high-frequency and high-temperature electronics applications. Although significant progress has been recently achieved [1], stability and reliability are still some of the main issues under investigation, particularly at high temperatures [2-3]. Taking into account that the gate contact metallization is one of the weakest points in AlGaN/GaN HEMTs, the reliability of Ni, Mo, Pt and refractory metal gates is crucial [4-6]. This work has been focused on the thermal stress and reliability assessment of AlGaN/GaN HEMTs. After an unbiased storage at 350 o C for 2000 hours, devices with Ni/Au gates exhibited detrimental IDS-VDS degradation in pulsed mode. In contrast, devices with Mo/Au gates showed no degradation after similar storage conditions. Further capacitance-voltage characterization as a function of temperature and frequency revealed two distinct trap-related effects in both kinds of devices. At low frequency (< 1MHz), increased capacitance near the threshold voltage was present at high temperatures and more pronounced for the Ni/Au gate HEMT and as the frequency is lower. Such an anomalous “bump” has been previously related to H-related surface polar charges [7]. This anomalous behavior in the C-V characteristics was also observed in Mo/Au gate HEMTs after 1000 h at a calculated channel temperatures of around from 250 o C (T2) up to 320 ºC (T4), under a DC bias (VDS= 25 V, IDS= 420 mA/mm) (DC-life test). The devices showed a higher “bump” as the channel temperature is higher (Fig. 1). At 1 MHz, the higher C-V curve slope of the Ni/Au gated HEMTs indicated higher trap density than Mo/Au metallization (Fig. 2). These results highlight that temperature is an acceleration factor in the device degradation, in good agreement with [3]. Interface state density analysis is being performed in order to estimate the trap density and activation energy.

Impact of N2 plasma power and duration on AlGaN/GaN HEMT

urface treatments have been recently shown to play an active role in electrical characteristics in AlGaN/GaN HEMTs, in particular during the passivation processing [1-4]. However, the responsible mechanisms are partially unknown and further studies are demanding. The effects of power and time N2 plasma pre-treatment prior to SiN deposition using PE-CVD (plasma enhanced chemical vapour deposition) on GaN and AlGaN/GaN HEMT have been investigated. The low power (60 W) plasma pre-treatment was found to improve the electronic characteristics in GaN based HEMT devices, independently of the time duration up to 20 min. In contrast, high power (150 and 210 W) plasma pretreatment showed detrimental effects in the electronic properties (Fig. 1), increasing the sheet resistance of the 2DEG, decreasing the 2DEG charge density in AlGaN/GaN HEMTs, transconductance reduction and decreasing the fT and fmax values up to 40% respect to the case using 60 W N2 plasma power. Although AFM (atomic force microscopy) results showed AlGaN and GaN surface roughness is not strongly affected by the N2-plasma, KFM (Kelvin force microscopy) surface analysis shows significant changes in the surface potential, trending to increase its values as the plasma power is higher. The whole results point at energetic ions inducing polarization-charge changes that affect dramatically to the 2-DEG charge density and the final characteristics of the HEMT devices. Therefore, we conclude that AlGaN surface is strongly sensitive to N2 plasma power conditions, which turn to be a key factor to achieve a good surface preparation prior to SiN passivation.

Continental Perspective 3, Spain

Well, I firmly believe that, as a professor, one has the duty, the obligation to show and explain his work. Not, of course, as a model to imitate, but rather as an opportunity to reflect upon that work. So, I will try to explain some of the considerations that were crucial in the development of each project. It is my hope that these reflections may be of interest to you, and due to my optimistic nature, that you may even enjoy it. Today I am going to present some projects, from a specific point of view: that of MATERIALITY. This is why I decided to title this presentation ARCHITEXTURE: that is, architecture from the point of view of texture, the quality of its material. Our architecture wants to pay attention to materials; we like to use very physical materials. We try to explore the expressive possibilities of different materials. That allows us, on the one hand, to try to master different techniques, and exploit their potential. On the other hand, it also avoids the dangers of style. Style is the death of an architect. When he starts repeating formulas, avoiding experimentation, copying himself, he dies of boredom, of intellectual boredom. Nevertheless, I don’t believe that the material itself determines anything. Architecture is an exercise of the freedom of an architect. Almost nothing is a given. Of course, there is the law of gravity and economic restraints, and even the overwhelming building code. But the most determinant factor is always the freedom of the architect, derived from his mastery of knowledge and culture, and his decision to innovate and to take risks

High Temperature Pulsed and DC Performance of AlInN/GaN HEMTs

The AlGaN/GaN high-electron mobility transistors (HEMTs) have been considered as promising candidates for the next generation of high temperature, high frequency, high-power devices. The potential of GaN-based HEMTs may be improved using an AlInN barrier because of its better lattice match to GaN, resulting in higher sheet carrier densities without piezoelectric polarization [1]. This work has been focused on the study of AlInN HEMTs pulse and DC mode characterization at high temperature.

Growth and characterization of InGaN/GaN quantum dots for violet/blue applications

We report on plasma-assisted molecular beam epitaxy growth and characterization of InGaN/GaN quantum dots (QDs) for violet/blue applications.