Growth and characterization of InGaN/GaN quantum dots for violet/blue applications

Autoria(s): Gacevic, Zarko; Lefebvre, P.; Calleja Pardo, Enrique; Bertram, F.; Schmidt, G.; Veit, P.; Christen, J.
Data(s)

2011
Resumo

We report on plasma-assisted molecular beam epitaxy growth and characterization of InGaN/GaN quantum dots (QDs) for violet/blue applications.
Formato

application/pdf
Identificador

http://oa.upm.es/13581/
Idioma(s)

spa
Publicador

E.T.S.I. Telecomunicación (UPM)
Relação

http://oa.upm.es/13581/1/INVE_MEM_2011_115002.pdf

info:eu-repo/semantics/altIdentifier/doi/null
Direitos

http://creativecommons.org/licenses/by-nc-nd/3.0/es/

info:eu-repo/semantics/openAccess
Fonte

Proceedings International Conference on Nitride Semiconductors 2011 | International Conference on Nitride Semiconductors 2011 | 10/07/2011 - 15/07/2011 | Glasgow, UK
Palavras-Chave #Electrónica
Tipo

info:eu-repo/semantics/conferenceObject

Ponencia en Congreso o Jornada

PeerReviewed
Acesso ao item digital