Room temperature photoluminescence of InGaAs Surface Quantum Dots

Self-assembled InGaAs quantum dots show unique physical properties such as three dimensional confinement, high size homogeneity, high density and low number of dislocations. They have been extensively used in the active regions of laser devices for optical communications applications [1]. Therefore, buried quantum dots (BQDs) embedded in wider band gap materials have been normally studied. The wave confinement in all directions and the stress field around the dot affect both optical and electrical properties [2, 3]. However, surface quantum dots (SQDs) are less affected by stress, although their optical and electrical characteristics have a strong dependence on surface fluctuation. Thus, they can play an important role in sensor applications

Impact of N2 plasma power and duration on AlGaN/GaN HEMT

urface treatments have been recently shown to play an active role in electrical characteristics in AlGaN/GaN HEMTs, in particular during the passivation processing [1-4]. However, the responsible mechanisms are partially unknown and further studies are demanding. The effects of power and time N2 plasma pre-treatment prior to SiN deposition using PE-CVD (plasma enhanced chemical vapour deposition) on GaN and AlGaN/GaN HEMT have been investigated. The low power (60 W) plasma pre-treatment was found to improve the electronic characteristics in GaN based HEMT devices, independently of the time duration up to 20 min. In contrast, high power (150 and 210 W) plasma pretreatment showed detrimental effects in the electronic properties (Fig. 1), increasing the sheet resistance of the 2DEG, decreasing the 2DEG charge density in AlGaN/GaN HEMTs, transconductance reduction and decreasing the fT and fmax values up to 40% respect to the case using 60 W N2 plasma power. Although AFM (atomic force microscopy) results showed AlGaN and GaN surface roughness is not strongly affected by the N2-plasma, KFM (Kelvin force microscopy) surface analysis shows significant changes in the surface potential, trending to increase its values as the plasma power is higher. The whole results point at energetic ions inducing polarization-charge changes that affect dramatically to the 2-DEG charge density and the final characteristics of the HEMT devices. Therefore, we conclude that AlGaN surface is strongly sensitive to N2 plasma power conditions, which turn to be a key factor to achieve a good surface preparation prior to SiN passivation.

Crecimiento, fabricación y caracterización de heteroestructuras y nanocolumnas ordenadas basadas en nitruros del grupo III para aplicaciones sensoras

Esta memoria está basada en el crecimiento y caracterización de heteroestructuras Al(Ga)N/GaN y nanocolumnas ordenadas de GaN, y su aplicación en sensores químicos. El método de crecimiento ha sido la epitaxia de haces moleculares asistida por plasma (PAMBE). En el caso de las heteroestructuras Al(Ga)N/GaN, se han crecido barreras de distinto espesor y composición, desde AlN de 5 nm, hasta AlGaN de 35 nm. Además de una caracterización morfológica, estructural y eléctrica básica de las capas, también se han fabricado a partir de ellas dispositivos tipo HEMTs. La caracterización eléctrica de dichos dispositivos (carga y movilidad de en el canal bidimensional) indica que las mejores heteroestructuras son aquellas con un espesor de barrera intermedio (alrededor de 20 nm). Sin embargo, un objetivo importante de esta Tesis ha sido verificar las ventajas que podían tener los sensores basados en heteroestructuras AlN/GaN (frente a los típicos basados en AlGaN/GaN), con espesores de barrera muy finos (alrededor de 5 nm), ya que el canal de conducción que se modula por efecto de cambios químicos está más cerca de la superficie en donde ocurren dichos cambios químicos. De esta manera, se han utilizado los dispositivos tipo HEMTs como sensores químicos de pH (ISFETs), y se ha comprobado la mayor sensibilidad (variación de corriente frente a cambios de pH, Ids/pH) en los sensores basados en AlN/GaN frente a los basados en AlGaN/GaN. La mayor sensibilidad es incluso más patente en aplicaciones en las que no se utiliza un electrodo de referencia. Se han fabricado y caracterizado dispositivos ISFET similares utilizando capas compactas de InN. Estos sensores presentan peor estabilidad que los basados en Al(Ga)N/GaN, aunque la sensibilidad superficial al pH era la misma (Vgs/pH), y su sensibilidad en terminos de corriente de canal (Ids/pH) arroja valores intermedios entre los ISFET basados en AlN/GaN y los valores de los basados en AlGaN/GaN. Para continuar con la comparación entre dispositivos basados en Al(Ga)N/GaN, se fabricaron ISFETs con el área sensible más pequeña (35 x 35 m2), de tamaño similar a los dispositivos destinados a las medidas de actividad celular. Sometiendo los dispositivos a pulsos de voltaje en su área sensible, la respuesta de los dispositivos de AlN presentaron menor ruido que los basados en AlGaN. El ruido en la corriente para dispositivos de AlN, donde el encapsulado no ha sido optimizado, fue tan bajo como 8.9 nA (valor rms), y el ruido equivalente en el potencial superficial 38.7 V. Estos valores son más bajos que los encontrados en los dispositivos típicos para la detección de actividad celular (basados en Si), y del orden de los mejores resultados encontrados en la literatura sobre AlGaN/GaN. Desde el punto de vista de la caracterización electro-química de las superficies de GaN e InN, se ha determinado su punto isoeléctrico. Dicho valor no había sido reportado en la literatura hasta el momento. El valor, determinado por medidas de “streaming potential”, es de 4.4 y 4 respectivamente. Este valor es una importante característica a tener en cuenta en sensores, en inmovilización electrostática o en la litografía coloidal. Esta última técnica se discute en esta memoria, y se aplica en el último bloque de investigación de esta Tesis (i.e. crecimiento ordenado). El último apartado de resultados experimentales de esta Tesis analiza el crecimiento selectivo de nanocolumnas ordenadas de GaN por MBE, utilizando mascaras de Ti con nanoagujeros. Se ha estudiado como los distintos parámetros de crecimiento (i.e. flujos de los elementos Ga y N, temperatura de crecimiento y diseño de la máscara) afectan a la selectividad y a la morfología de las nanocolumnas. Se ha conseguido con éxito el crecimiento selectivo sobre pseudosustratos de GaN con distinta orientación cristalina o polaridad; templates de GaN(0001)/zafiro, GaN(0001)/AlN/Si, GaN(000-1)/Si y GaN(11-20)/zafiro. Se ha verificado experimentalmente la alta calidad cristalina de las nanocolumnas ordenadas, y su mayor estabilidad térmica comparada con las capas compactas del mismo material. Las nanocolumnas ordenadas de nitruros del grupo III tienen una clara aplicación en el campo de la optoelectrónica, principalmente para nanoemisores de luz blanca. Sin embargo, en esta Tesis se proponen como alternativa a la utilización de capas compactas o nanocolumnas auto-ensambladas en sensores. Las nanocolumnas auto-ensambladas de GaN, debido a su alta razón superficie/volumen, son muy prometedoras en el campo de los sensores, pero su amplia dispersión en dimensiones (altura y diámetro) supone un problema para el procesado y funcionamiento de dispositivos reales. En ese aspecto, las nanocolumnas ordenadas son más robustas y homogéneas, manteniendo una alta relación superficie/volumen. Como primer experimento en el ámbito de los sensores, se ha estudiado como se ve afectada la emisión de fotoluminiscencia de las NCs ordenadas al estar expuestas al aire o al vacio. Se observa una fuerte caída en la intensidad de la fotoluminiscencia cuando las nanocolumnas están expuestas al aire (probablemente por la foto-adsorción de oxigeno en la superficie), como ya había sido documentado anteriormente en nanocolumnas auto-ensambladas. Este experimento abre el camino para futuros sensores basados en nanocolumnas ordenadas. Abstract This manuscript deals with the growth and characterization of Al(Ga)N/GaN heterostructures and GaN ordered nanocolumns, and their application in chemical sensors. The growth technique has been the plasma-assisted molecular beam epitaxy (PAMBE). In the case of Al(Ga)N/GaN heterostructures, barriers of different thickness and composition, from AlN (5 nm) to AlGaN (35 nm) have been grown. Besides the basic morphological, structural and electrical characterization of the layers, HEMT devices have been fabricated based on these layers. The best electrical characteristics (larger carriers concentration and mobility in the two dimensional electron gas) are those in AlGaN/GaN heterostructures with a medium thickness (around 20 nm). However, one of the goals of this Thesis has been to verify the advantages that sensors based on AlN/GaN (thickness around 7 nm) have compared to standard AlGaN/GaN, because the conduction channel to be modulated by chemical changes is closer to the sensitive area. In this way, HEMT devices have been used as chemical pH sensors (ISFETs), and the higher sensitivity (conductance change related to pH changes, Ids/pH) of AlN/GaN based sensors has been proved. The higher sensibility is even more obvious in application without reference electrode. Similar ISFETs devices have been fabricated based on InN compact layers. These devices show a poor stability, but its surface sensitivity to pH (Vgs/pH) and its sensibility (Ids/pH) yield values between the corresponding ones of AlN/GaN and AlGaN/GaN heterostructures. In order to a further comparison between Al(Ga)N/GaN based devices, ISFETs with smaller sensitive area (35 x 35 m2), similar to the ones used in cellular activity record, were fabricated and characterized. When the devices are subjected to a voltage pulse through the sensitive area, the response of AlN based devices shows lower noise than the ones based on AlGaN. The noise in the current of such a AlN based device, where the encapsulation has not been optimized, is as low as 8.9 nA (rms value), and the equivalent noise to the surface potential is 38.7 V. These values are lower than the found in typical devices used for cellular activity recording (based on Si), and in the range of the best published results on AlGaN/GaN. From the point of view of the electrochemical characterization of GaN and InN surfaces, their isoelectric point has been experimentally determined. Such a value is the first time reported for GaN and InN surfaces. These values are determined by “streaming potential”, being pH 4.4 and 4, respectively. Isoelectric point value is an important characteristic in sensors, electrostatic immobilization or in colloidal lithography. In particular, colloidal lithography has been optimized in this Thesis for GaN surfaces, and applied in the last part of experimental results (i.e. ordered growth). The last block of this Thesis is focused on the selective area growth of GaN nanocolumns by MBE, using Ti masks decorated with nanoholes. The effect of the different growth parameters (Ga and N fluxes, growth temperature and mask design) is studied, in particular their impact in the selectivity and in the morphology of the nanocolumns. Selective area growth has been successful performed on GaN templates with different orientation or polarity; GaN(0001)/sapphire, GaN(0001)/AlN/Si, GaN(000- 1)/Si and GaN(11-20)/sapphire. Ordered nanocolumns exhibit a high crystal quality, and a higher thermal stability (lower thermal decomposition) than the compact layers of the same material. Ordered nanocolumns based on III nitrides have a clear application in optoelectronics, mainly for white light nanoemitters. However, this Thesis proposes them as an alternative to compact layers and self-assembled nanocolumns in sensor applications. Self-assembled GaN nanocolumns are very appealing for sensor applications, due to their large surface/volume ratio. However, their large dispersion in heights and diameters are a problem in terms of processing and operation of real devices. In this aspect, ordered nanocolumns are more robust and homogeneous, keeping the large surface/volume ratio. As first experimental evidence of their sensor capabilities, ordered nanocolumns have been studied regarding their photoluminiscence on air and vacuum ambient. A big drop in the intensity is observed when the nanocolumns are exposed to air (probably because of the oxygen photo-adsortion), as was already reported in the case of self-assembled nanocolumns. This opens the way to future sensors based on ordered III nitrides nanocolumns.

Caracterización e instrumentación de sensores de ultrasonidos

El propósito de este proyecto de �fin de carrera es la caracterización e instrumentación de un sensor de ultrasonidos modelado por el tutor de este proyecto: Don César Briso Rodrí��guez. Una vez realizado el modelado de dicho sensor, simulando tanto sus caracter�í�sticas f�í�sicas, como sus caracterí��sticas eléctricas, se procede a la intrumentación y uso del mismo. La parte de intrumentaci�ón incluye tanto la electrónica que ser��á necesaria para la excitación del piezoeléctrico, en el modo de emisi�ón, como para la recepción de los pulsos el�éctricos generados por el sensor, como respuesta a los ecos recibidos, y su adecuación a niveles de señal correctos para la adquisici�ón, en el modo de escucha. Tras la adecuaci�ón de las señales para la adquisici�ón, éstas ser�án digitalizadas, tratadas y representadas por pantalla en un PC, a trav�es de una tarjeta de adquisición de datos por puerto USB encargada del muestreo de las señales de respuesta ya tratadas y su posterior enví��o al software de control y representaci�ón desarrollado en este proyecto. El entorno de usuario, el software de control de la tarjeta de adquisición y el software de tratamiento y representaci�ón se ha desarrollado con Visual Basic 2008 y las utilidades gr�áfi�cas de las librer��ías OpenGL. ABSTRACT The purpose of this project is to limit the characterization and implementation of an ultrasonic sensor modeled by Mr. C�ésar Briso Rodr��íguez. Once the sensor modeling by simulating physical characteristics and electrical characteristics, we proceed to the instrumentation and use. This section includes electronic instrumentation that would be necessary for the piezoelectric excitation in the emission mode and for receiving electrical pulses generated by the sensor in response to the received echoes, and matching signal levels right to acquire, in the reception mode. After the adjustment of the signals for the acquisition, these signals will be digitalized, processed and represented on the screen on a PC through a data acquisition card by USB port. Acquisition card is able to sample the response signals and transmit the samples to representation and control software developed in this project. The user interface, the acquisition card control software and processing and representation software has been developed with Visual Basic 2008 and OpenGL graphical libraries.

Impact of N2 plasma power discharge on AlGaN/GaN HEMT performance

The effects of power and time conditions of in situ N2 plasma treatment, prior to silicon nitride (SiN) passivation, were investigated on an AlGaN/GaN high-electron mobility transistor (HEMT). These studies reveal that N2 plasma power is a critical parameter to control the SiN/AlGaN interface quality, which directly affects the 2-D electron gas density. Significant enhancement in the HEMT characteristics was observed by using a low power N2 plasma pretreatment. In contrast, a marked gradual reduction in the maximum drain-source current density (IDS max) and maximum transconductance (gm max), as well as in fT and fmax, was observed as the N2 plasma power increases (up to 40% decrease for 210 W). Different mechanisms were proposed to be dominant as a function of the discharge power range. A good correlation was observed between the device electrical characteristics and the surface assessment by atomic force microscopy and Kelvin force microscopy techniques.

Application and modeling of GaN FET in 1MHz large signal bandwidth power supply for radio frequency power amplifier

In this paper, implementation and testing of non- commercial GaN HEMT in a simple buck converter for envelope amplifier in ET and EER transmission techn iques has been done. Comparing to the prototypes with commercially available EPC1014 and 1015 GaN HEMTs, experimentally demonstrated power supply provided better thermal management and increased the switching frequency up to 25MHz. 64QAM signal with 1MHz of large signal bandw idth and 10.5dB of Peak to Average Power Ratio was gener ated, using the switching frequency of 20MHz. The obtaine defficiency was 38% including the driving circuit an d the total losses breakdown showed that switching power losses in the HEMT are the dominant ones. In addition to this, some basic physical modeling has been done, in order to provide an insight on the correlation between the electrical characteristics of the GaN HEMT and physical design parameters. This is the first step in the optimization of the HEMT design for this particular application.

Nuevas arquitecturas de transpondedores de microondas = New transponder architectures at microwave frequencies = Nouvelles architectures des transpondeurs d’hyperfréquences

En la última década, los sistemas de telecomunicación de alta frecuencia han evolucionado tremendamente. Las bandas de frecuencias, los anchos de banda del usuario, las técnicas de modulación y otras características eléctricas están en constante cambio de acuerdo a la evolución de la tecnología y la aparición de nuevas aplicaciones. Las arquitecturas de los transceptores modernos son diferentes de las tradicionales. Muchas de las funciones convencionalmente realizadas por circuitos analógicos han sido asignadas gradualmente a procesadores digitales de señal, de esta manera, las fronteras entre la banda base y las funcionalidades de RF se difuminan. Además, los transceptores inalámbricos digitales modernos son capaces de soportar protocolos de datos de alta velocidad, por lo que emplean una elevada escala de integración para muchos de los subsistemas que componen las diferentes etapas. Uno de los objetivos de este trabajo de investigación es realizar un estudio de las nuevas configuraciones en el desarrollo de demostradores de radiofrecuencia (un receptor y un transmisor) y transpondedores para fines de comunicaciones y militares, respectivamente. Algunos trabajos se han llevado a cabo en el marco del proyecto TECRAIL, donde se ha implementado un demostrador de la capa física LTE para evaluar la viabilidad del estándar LTE en el entorno ferroviario. En el ámbito militar y asociado al proyecto de calibración de radares (CALRADAR), se ha efectuado una actividad importante en el campo de la calibración de radares balísticos Doppler donde se ha analizado cuidadosamente su precisión y se ha desarrollado la unidad generadora de Doppler de un patrón electrónico para la calibración de estos radares. Dicha unidad Doppler es la responsable de la elevada resolución en frecuencia del generador de “blancos” radar construido. Por otro lado, se ha elaborado un análisis completo de las incertidumbres del sistema para optimizar el proceso de calibración. En una segunda fase se han propuesto soluciones en el desarrollo de dispositivos electro-ópticos para aplicaciones de comunicaciones. Estos dispositivos son considerados, debido a sus ventajas, tecnologías de soporte para futuros dispositivos y subsistemas de RF/microondas. Algunas demandas de radio definida por software podrían cubrirse aplicando nuevos conceptos de circuitos sintonizables mediante parámetros programables de un modo dinámico. También se ha realizado una contribución relacionada con el diseño de filtros paso banda con topología “Hairpin”, los cuales son compactos y se pueden integrar fácilmente en circuitos de microondas en una amplia gama de aplicaciones destinadas a las comunicaciones y a los sistemas militares. Como importante aportación final, se ha presentado una propuesta para ecualizar y mejorar las transmisiones de señales discretas de temporización entre los TRMs y otras unidades de procesamiento, en el satélite de última generación SEOSAR/PAZ. Tras un análisis exhaustivo, se ha obtenido la configuración óptima de los buses de transmisión de datos de alta velocidad basadas en una red de transceptores. ABSTRACT In the last decade, high-frequency telecommunications systems have extremely evolved. Frequency bands, user bandwidths, modulation techniques and other electrical characteristics of these systems are constantly changing following to the evolution of technology and the emergence of new applications. The architectures of modern transceivers are different from the traditional ones. Many of the functions conventionally performed by analog circuitry have gradually been assigned to digital signal processors. In this way, boundaries between baseband and RF functionalities are diffused. The design of modern digital wireless transceivers are capable of supporting high-speed data protocols. Therefore, a high integration scale is required for many of the components in the block chain. One of the goals of this research work is to investigate new configurations in the development of RF demonstrators (a receiver and a transmitter) and transponders for communications and military purposes, respectively. A LTE physical layer demonstrator has been implemented to assess the viability of LTE in railway scenario under the framework of the TECRAIL project. An important activity, related to the CALRADAR project, for the calibration of Doppler radars with extremely high precision has been performed. The contribution is the Doppler unit of the radar target generator developed that reveals a high frequency resolution. In order to assure the accuracy of radar calibration process, a complete analysis of the uncertainty in the above mentioned procedure has been carried out. Another important research topic has been the development of photonic devices that are considered enabling technologies for future RF and microwave devices and subsystems. Some Software Defined Radio demands are addressed by the proposed novel circuit concepts based on photonically tunable elements with dynamically programmable parameters. A small contribution has been made in the field of Hairpin-line bandpass filters. These filters are compact and can also be easily integrated into microwave circuits finding a wide range of applications in communication and military systems. In this research field, the contributions made have been the improvements in the design and the simulations of wideband filters. Finally, an important proposal to balance and enhance transmissions of discrete timing signals between TRMs and other processing units into the state of the art SEOSAR/PAZ Satellite has been carried out obtaining the optimal configuration of the high-speed data transmission buses based on a transceiver network. RÉSUMÉ Les systèmes d'hyperfréquence dédiés aux télécommunications ont beaucoup évolué dans la dernière décennie. Les bandes de fréquences, les bandes passantes par utilisateur, les techniques de modulation et d'autres caractéristiques électriques sont en constant changement en fonction de l'évolution des technologies et l'émergence de nouvelles applications. Les architectures modernes des transcepteurs sont différentes des traditionnelles. Un grand nombre d’opérations normalement effectuées par les circuits analogiques a été progressivement alloué à des processeurs de signaux numériques. Ainsi, les frontières entre la bande de base et la fonctionnalité RF sont floues. Les transcepteurs sans fils numériques modernes sont capables de transférer des données à haute vitesse selon les différents protocoles de communication utilisés. C'est pour cette raison qu’un niveau élevé d'intégration est nécessaire pour un grand nombre de composants qui constitue les différentes étapes des systèmes. L'un des objectifs de cette recherche est d'étudier les nouvelles configurations dans le développement des démonstrateurs RF (récepteur et émetteur) et des transpondeurs à des fins militaire et de communication. Certains travaux ont été réalisés dans le cadre du projet TECRAIL, où un démonstrateur de la couche physique LTE a été mis en place pour évaluer la faisabilité de la norme LTE dans l'environnement ferroviaire. Une contribution importante, liée au projet CALRADAR, est proposée dans le domaine des systèmes d’étalonnage de radar Doppler de haute précision. Cette contribution est le module Doppler de génération d’hyperfréquence intégré dans le système électronique de génération de cibles radar virtuelles que présente une résolution de fréquence très élevée. Une analyse complète de l'incertitude dans l'étalonnage des radars Doppler a été effectuée, afin d'assurer la précision du calibrage. La conception et la mise en oeuvre de quelques dispositifs photoniques sont un autre sujet important du travail de recherche présenté dans cette thèse. De tels dispositifs sont considérés comme étant des technologies habilitantes clés pour les futurs dispositifs et sous-systèmes RF et micro-ondes grâce à leurs avantages. Certaines demandes de radio définies par logiciel pourraient être supportées par nouveaux concepts de circuits basés sur des éléments dynamiquement programmables en utilisant des paramètres ajustables. Une petite contribution a été apportée pour améliorer la conception et les simulations des filtres passe-bande Hairpin à large bande. Ces filtres sont compacts et peuvent également être intégrés dans des circuits à micro-ondes compatibles avec un large éventail d'applications dans les systèmes militaires et de communication. Finalement, une proposition a été effectuée visant à équilibrer et améliorer la transmission des signaux discrets de synchronisation entre les TRMs et d'autres unités de traitement dans le satellite SEOSAR/PAZ de dernière génération et permettant l’obtention de la configuration optimale des bus de transmission de données à grande vitesse basés sur un réseau de transcepteurs.

InN/GaN heterojunction electrical behavior

Indium nitride (InN) has been the subject of intense research in recent years. Some of its most attractive features are its excellent transport properties such as its small band edge electron effective mass, high electron mobilities and peak drift velocities, and high frequency transient drift velocity oscillations [1]. These suggest enormous potential applications for InN in high frequency electronic devices. But to date the high unintentional bulk electron concentration (n~1018 cm-3) of undoped InN samples and the surface electron accumulation layer make it a hard task to create a reliable metalsemiconductor Schottky barrier. Some attempts have been made to overcome this problem by means of material oxidation [2] or deposition of insulators [3]. In this work we present a way to obtain an electrical rectification behaviour by means of heterojunction growth. Due to the big band gap differences among nitride semiconductors, it’s possible to create a structure with high band offsets. In InN/GaN heterojunctions, depending on the GaN doping, the magnitude of conduction and valence band offset are critical parameters which allow distinguishing among different electrical behaviours. The earliest estimate of the valence band offset at an InN–GaN heterojunction in a wurtzite structure was measured to be ~0.85 eV [4], while the Schottky barrier heights were determined to be ~ 1,4 eV [5].We grew In-face InN layer with varying thickness (between 150 nm and 1 mm) by plasma assisted molecular beam epitaxy (PA-MBE) on GaNntemplates (GaN/Al2O3), with temperatures ranging between 300°C and 450°C. The different doping in GaN template (Si doping, Fe doping and Mg doping) results in differences in band alignments of the two semiconductors changing electrical barriers for carriers and consequently electrical conduction behaviour. The processing of the devices includes metallization of the ohmic contacts on InN and GaN, for which we used Ti/Al/Ni/Au. Whereas an ohmic contact on InN is straightforward, the main issue was the fabrication of the contact on GaN due to the very low decomposition temperature of InN. A standard ohmic contact on GaN is generally obtained by high temperature rapid thermal annealing (RTA), typically done between 500ºC and 900ºC[6]. In this case, the limitation due to the presence of In-face InN imposes an upper limit on the temperature for the thermal annealing process and ohmic contact formation of about 450°C. We will present results on the morphology of the InN layers by X-Ray diffraction and SEM, and electrical measurements, in particular current-voltage and capacitance-voltage characteristics.

Electrical, photoelectrical and morphological properties of ZnO nanowire networks grown on SiO2 and on Si

ZnO nanofibre networks (NFNs) were grown by vapour transport method on Si-based substrates. One type of substrate was SiO2 thermally grown on Si and another consisted of a Si wafer onto which Si nanowires (NWs) had been grown having Au nanoparticles catalysts. The ZnO-NFN morphology was observed by scanning electron microscopy on samples grown at 600 °C and 720 °C substrate temperature, while an focused ion beam was used to study the ZnO NFN/Si NWs/Si and ZnO NFN/SiO2 interfaces. Photoluminescence, electrical conductance and photoconductance of ZnO-NFN was studied for the sample grown on SiO2. The photoluminescence spectra show strong peaks due to exciton recombination and lattice defects. The ZnO-NFN presents quasi-persistent photoconductivity effects and ohmic I-V characteristics which become nonlinear and hysteretic as the applied voltage is increased. The electrical conductance as a function of temperature can be described by a modified three dimensional variable hopping model with nanometer-ranged typical hopping distances.

Method for electrical evaluation of graphene using a GFET structure

n this work, we explain a method to characterize graphene using electrical measurements in graphene field-effect transistors (GFET) devices. Our goal is to obtain the material electronic properties from the output characteristics of one GFET device. For the previous purpose, we will need to apply a physical model that allows us to correlate the electronic behavior of a GFET with the material properties.