Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots

Diluted nitride self-assembled In(Ga)AsN quantum dots (QDs) grown on GaAs substrates are potential candidates to emit in the windows of maximum transmittance for optical fibres (1.3-1.55 μm). In this paper, we analyse the effect of nitrogen addition on the indium desorption occurring during the capping process of InxGa1−xAs QDs (x = l and 0.7). The samples have been grown by molecular beam epitaxy and studied through transmission electron microscopy (TEM) and photoluminescence techniques. The composition distribution inside the dots was determined by statistical moiré analysis and measured by energy dispersive X-ray spectroscopy. First, the addition of nitrogen in In(Ga)As QDs gave rise to a strong redshift in the emission peak, together with a large loss of intensity and monochromaticity. Moreover, these samples showed changes in the QDs morphology as well as an increase in the density of defects. The statistical compositional analysis displayed a normal distribution in InAs QDs with an average In content of 0.7. Nevertheless, the addition of Ga and/or N leads to a bimodal distribution of the Indium content with two separated QD populations. We suggest that the nitrogen incorporation enhances the indium fixation inside the QDs where the indium/gallium ratio plays an important role in this process. The strong redshift observed in the PL should be explained not only by the N incorporation but also by the higher In content inside the QDs

Classification of Satellite Images by means of Fuzzy Rules generated by a Genetic Algorithm

The data acquired by Remote Sensing systems allow obtaining thematic maps of the earth's surface, by means of the registered image classification. This implies the identification and categorization of all pixels into land cover classes. Traditionally, methods based on statistical parameters have been widely used, although they show some disadvantages. Nevertheless, some authors indicate that those methods based on artificial intelligence, may be a good alternative. Thus, fuzzy classifiers, which are based on Fuzzy Logic, include additional information in the classification process through based-rule systems. In this work, we propose the use of a genetic algorithm (GA) to select the optimal and minimum set of fuzzy rules to classify remotely sensed images. Input information of GA has been obtained through the training space determined by two uncorrelated spectral bands (2D scatter diagrams), which has been irregularly divided by five linguistic terms defined in each band. The proposed methodology has been applied to Landsat-TM images and it has showed that this set of rules provides a higher accuracy level in the classification process

SiGe nanowires grown by LPCVD using Ga-Au catalysts

The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au

Diffusion of Zn into GaAs and AlGaAs from isothermal Liquid-phase epitaxy solutions

In this work we present results of zinc diffusion in GaAs using the liquid phase epitaxy technique from liquid solutions of Ga‐As‐Zn and Ga‐As‐Al‐Zn. Using silicon‐doped n‐GaAs substrates, working at a diffusion temperature of 850 °C, and introducing a dopant concentration ranging 1018–1019 cm−3, the most important findings regarding the diffusion properties are as follows: (a) zinc concentration in the solid depends on the square root of zinc atomic fraction in the liquid; (b) the diffusion is dominated by the interstitial‐substitutional process; (c) the diffusivity D varies as about C3 in the form D=2.9×10−67C3.05; (d) aluminum plays the role of the catalyst of the diffusion process, if it is introduced in the liquid solution, since it is found that D varies as (γAsXlAs)−1; (e) the zinc interstitial is mainly doubly ionized (Zn++i); (f) the zinc diffusion coefficient in Al0.85 Ga0.15 As is about four times greater than in GaAs; (g) by means of all these results, it is possible to control zinc diffusion processes in order to obtain optimized depth junctions and doping levels in semiconductor device fabrication.

Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN

Arsenic alloying is observed for epitaxial layers nominally intended to be In0.75Ga0.25N. Voids form beneath their interfaces with GaAs substrates, acting as sources of Ga + As out-diffusion into the growing epilayers. As a result, heteroepitaxial single-phase quaternary InxGa1-xAsyN1-y, films are formed with x similar to 0.55 and 0.05 menor que y menor que 0,10. While an undoped epilayer retains the wurtzite structure, a Mn-doped sample showed randomly spaced dopant segregations, which, together with a slightly higher As concentration, led to a transformation from the hexagonal to the twinned cubic phase.

SiGe/Si nanowire axial heterostructures grown by LPCVD using Ga-Au

The use of Ga-Au alloys of different compositions as metal catalysts for the growth of abrupt SiGe/Si nanowire axial heterostructures has been investigated. The heterostructures grown in a continuous process by just switching the gas precursors, show uniform nanowire diameters, almost abrupt compositional changes and no defects between the different sections. These features represent significant improvements over the results obtained using pure Au.

The nitrate-afterripening crosstalk is involved in the testa rupture of sisymbryum offinales seed

The loss of seed dormancy can occur by exposing the seed at low moisture storage conditions (afterripening; AR). Since a positive GA:ABA ratio play a key role in the reactivation of germination of non-dormant seeds, it seems obvious that a remarkable effect of AR is the decreasing of both ABA levels and sensitivity, as well as the increment of GA synthesis and sensitivity. ABA levels are regulated by control both of its biosynthesis thorough the 9-cis-epoxycarotenoid dioxygenase (NCED) encoding genes and its catabolism mediated mainly by ABA-8¿-hydroxylases (CYP707A). On the other hand, the last steps of the GA biosynthesis pathway should be involved to control its levels. Namely, GA20ox and GA3ox catalyzing the biosynthesis of active GA and GA2ox which catalyzes the GA inactivation. The presence of nitrate accelerates the sensu stricto germination of non-AR S. officinale seeds. Here, we demonstrate that in AR seeds nitrate also alters the expression pattern of key genes involved in ABA and GA metabolism and signalling (i.e. SoNCED6, SoNCED9, SoCYP707A2, SoABI5, SoGA3ox2, SoGA20ox6, SoGA2ox6 and SoRGL2). These results suggest that the nitrate signalling is also operative during imbibition of AR S. officinale seeds.

Multi-objective Aerodynamic Optimization of High-speed Trains in Tunnels

A genetic algorithm (GA) is employed for the multi-objective shape optimization of the nose of a high-speed train. Aerodynamic problems observed at high speeds become still more relevant when traveling along a tunnel. The objective is to minimize both the aerodynamic drag and the amplitude of the pressure gradient of the compression wave when a train enters a tunnel. The main drawback of GA is the large number of evaluations need in the optimization process. Metamodels-based optimization is considered to overcome such problem. As a result, an explicit relationship between pressure gradient and geometrical parameters is obtained.

Arabidopsis DELLA and two HD-ZIP transcription factors regulate GA signalling in the epidermis through the L1 cis-element

Gibberellins (GAs) are plant hormones that affect plant growth and regulate gene expression differentially across tissues. To study the molecular mechanisms underlying GA signaling in Arabidopsis thaliana, we focused on a GDSL lipase gene (LIP1) induced by GA and repressed by DELLA proteins. LIP1 contains an L1 box promoter sequence, conserved in the promoters of epidermis-specific genes, that is bound by ATML1, an HD-ZIP transcription factor required for epidermis specification. In this study, we demonstrate that LIP1 is specifically expressed in the epidermis and that its L1 box sequence mediates GA-induced transcription. We show that this sequence is overrepresented in the upstream regulatory regions of GA-induced and DELLA-repressed transcriptomes and that blocking GA signaling in the epidermis represses the expression of L1 box–containing genes and negatively affects seed germination. We show that DELLA proteins interact directly with ATML1 and its paralogue PDF2 and that silencing of both HD-ZIP transcription factors inhibits epidermal gene expression and delays germination. Our results indicate that, upon seed imbibition, increased GA levels reduce DELLA protein abundance and release ATML1/PDF2 to activate L1 box gene expression, thus enhancing germination potential.

Cartografiar el acontecimiento. Paisajes eventuales

En este trabajo se pretende hacer un acercamiento al estudio del paisaje desde su perspectiva dual, espacial y temporal. Se propone un retorno a la geografía y la defensa del espacio como objeto de estudio al tiempo que se mantiene una lectura temporal, eventual, del paisaje. Se trata de investigar las formas en que al enfrentarse al espacio no dominado se trazan estrategias de dominación y medida. Para ello se han estudiado dos casos de estudio: la Batalla de Berlín durante la Segunda Guerra Mundial y el lago Salton en California. This paper aims to make an approach to the study of landscape from its dual condition in space and time. It proposes a return to the geography and defense as a study space while maintaining a temporal reading, eventually, the landscape. The research focuses on the strategies of domination and plotted as the face space. This has been studied for two case studies: the Battle of Berlin during the Second World War and the Salton lake in California

Cu(In,Ga)Se2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics

Thinning the absorber layer is one of the possibilities envisaged to further decrease the production costs of Cu(In,Ga)Se2 (CIGSe) thin films solar cell technology. In the present study, the electronic transport in submicron CIGSe-based devices has been investigated and compared to that of standard devices. It is observed that when the absorber is around 0.5 μm-thick, tunnelling enhanced interface recombination dominates, which harms cells energy conversion efficiency. It is also shown that by varying either the properties of the Mo back contact or the characteristics of 3-stage growth processing, one can shift the dominating recombination mechanism from interface to space charge region and thereby improve the cells efficiency. Discussions on these experimental facts led to the conclusions that 3-stage process implies the formation of a CIGSe/CIGSe homo-interface, whose location as well as properties rule the device operation; its influence is enhanced in submicron CIGSe based solar cells.