SiGe nanowires grown by LPCVD using Ga-Au catalysts
| Data(s) |
2011
|
|---|---|
| Resumo |
The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au |
| Formato |
application/pdf |
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
E.T.S.I. Telecomunicación (UPM) |
| Relação |
http://oa.upm.es/13245/2/INVE_MEM_2011_111080.pdf http://dx.doi.org/10.1557/opl.2012.34 info:eu-repo/semantics/altIdentifier/doi/10.1557/opl.2012.34 |
| Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
| Fonte |
Proceedings of Materials Research Society Symposium 2011 | Materials Research Society Symposium 2011 | 28/11/2011 - 02/12/2011 | Boston, EEUU |
| Palavras-Chave | #Física #Telecomunicaciones |
| Tipo |
info:eu-repo/semantics/conferenceObject Ponencia en Congreso o Jornada PeerReviewed |
