Diffusion of Zn into GaAs and AlGaAs from isothermal Liquid-phase epitaxy solutions
Data(s) |
1990
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Resumo |
In this work we present results of zinc diffusion in GaAs using the liquid phase epitaxy technique from liquid solutions of Ga‐As‐Zn and Ga‐As‐Al‐Zn. Using silicon‐doped n‐GaAs substrates, working at a diffusion temperature of 850 °C, and introducing a dopant concentration ranging 1018–1019 cm−3, the most important findings regarding the diffusion properties are as follows: (a) zinc concentration in the solid depends on the square root of zinc atomic fraction in the liquid; (b) the diffusion is dominated by the interstitial‐substitutional process; (c) the diffusivity D varies as about C3 in the form D=2.9×10−67C3.05; (d) aluminum plays the role of the catalyst of the diffusion process, if it is introduced in the liquid solution, since it is found that D varies as (γAsXlAs)−1; (e) the zinc interstitial is mainly doubly ionized (Zn++i); (f) the zinc diffusion coefficient in Al0.85 Ga0.15 As is about four times greater than in GaAs; (g) by means of all these results, it is possible to control zinc diffusion processes in order to obtain optimized depth junctions and doping levels in semiconductor device fabrication. |
Formato |
application/pdf |
Identificador | |
Idioma(s) |
spa |
Publicador |
E.T.S.I. Telecomunicación (UPM) |
Relação |
http://oa.upm.es/13909/1/INV_SIN_NUMERO.pdf http://jap.aip.org/resource/1/japiau/v68/i6/p2723_s1? info:eu-repo/semantics/altIdentifier/doi/10.1063/1.346447 |
Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
Fonte |
Journal of Applied Physics, ISSN 0021-8979, 1990, Vol. 37, No. 5 |
Palavras-Chave | #Electrónica |
Tipo |
info:eu-repo/semantics/article Artículo PeerReviewed |