A low power routing algorithm for localization in IEEE 802.15.4 networks

Many context-aware applications rely on the knowledge of the position of the user and the surrounding objects to provide advanced, personalized and real-time services. In wide-area deployments, a routing protocol is needed to collect the location information from distant nodes. In this paper, we propose a new source-initiated (on demand) routing protocol for location-aware applications in IEEE 802.15.4 wireless sensor networks. This protocol uses a low power MAC layer to maximize the lifetime of the network while maintaining the communication delay to a low value. Its performance is assessed through experimental tests that show a good trade-off between power consumption and time delay in the localization of a mobile device.

Ultra Low Power FPGA-Based Architecture for Wake-up Radio in Wireless Sensor Networks

In this paper the capabilities of ultra low power FPGAs to implement Wake-up Radios (WuR) for ultra low energy Wireless Sensor Networks (WSNs) are analyzed. The main goal is to evaluate the utilization of very low power configurable devices to take advantage of their speed, flexibility and low power consumption instead of the more common approaches based on ASICs or microcontrollers. In this context, energy efficiency is a key aspect, considering that usually the instant power consumption is considered a figure of merit, more than the total energy consumed by the application.

Wake up Radio Architecture for Wireless Sensor Networks Using an Ultra Low Power FPGA

In this paper an implementation of a Wake up Radio(WuR) with addressing capabilities based on an ultra low power FPGA for ultra low energy Wireless Sensor Networks (WSNs) is proposed. The main goal is to evaluate the utilization of very low power configurable devices to take advantage of their speed, flexibility and low power consumption instead of the traditional approaches based on ASICs or microcontrollers, for communication frame decoding and communication data control.

Low-power, high-speed FFT processor for MB-OFDM UWB application

This paper presents a low-power, high-speed 4-data-path 128-point mixed-radix (radix-2 & radix-2 2 ) FFT processor for MB-OFDM Ultra-WideBand (UWB) systems. The processor employs the single-path delay feedback (SDF) pipelined structure for the proposed algorithm, it uses substructure-sharing multiplication units and shift-add structure other than traditional complex multipliers. Furthermore, the word lengths are properly chosen, thus the hardware costs and power consumption of the proposed FFT processor are efficiently reduced. The proposed FFT processor is verified and synthesized by using 0.13 µm CMOS technology with a supply voltage of 1.32 V. The implementation results indicate that the proposed 128-point mixed-radix FFT architecture supports a throughput rate of 1Gsample/s with lower power consumption in comparison to existing 128-point FFT architectures

Wake-up architecture for Wireless sensor nodes based on ultra low power FPGA

In this work a novel wake-up architecture for wireless sensor nodes based on ultra low power FPGA is presented. A simple wake up messaging mechanism for data gathering applications is proposed. The main goal of this work is to evaluate the utilization of low power configurable devices to take advantage of their speed, flexibility and low power consumption compared with traditional approaches, based on ASICs or microcontrollers, for frame decoding and data control. A test bed based on infrared communications has been built to validate the messaging mechanism and the processing architecture.

Photoacoustic effect measurement in aqueous suspensions of gold nanorods caused by low-frequency and low-power near-infrared pulsing laser irradiation

When aqueous suspensions of gold nanorods are irradiated with a pulsing laser (808 nm), pressure waves appear even at low frequencies (pulse repetition rate of 25 kHz). We found that the pressure wave amplitude depends on the dynamics of the phenomenon. For fixed concentration and average laser current intensity, the amplitude of the pressure waves shows a trend of increasing with the pulse slope and the pulse maximum amplitude.We postulate that the detected ultrasonic pressure waves are a sort of shock waves that would be generated at the beginning of each pulse, because the pressure wave amplitude would be the result of the positive interference of all the individual shock waves.

Low-power vertical cavity NAND gate

The study of the Vertical-Cavity Semiconductor Optical Amplifiers (VCSOAs) for optical signal processing applications is increasing his interest. Due to their particular structure, the VCSOAs present some advantages when compared to their edge-emitting counterparts including low manufacturing costs, high coupling efficiency to optical fibers and the ease to fabricate 2-D arrays of this kind of devices. As a consequence, all-optical logic gates based on VCSOAs may be very promising devices for their use in optical computing and optical switching in communications. Moreover, since all the boolean logic functions can be implemented by combining NAND logic gates, the development of a Vertical-Cavity NAND gate would be of particular interest. In this paper, the characteristics of the dispersive optical bistability appearing on a VCSOA operated in reflection are studied. A progressive increment of the number of layers compounding the top Distributed Bragg Reflector (DBR) of the VCSOA results on a change on the shape of the appearing bistability from an S-shape to a clockwise bistable loop. This resulting clockwise bistability has high on-off contrast ratio and input power requirements one order of magnitude lower than those needed for edge-emitting devices. Based on these results, an all-optical vertical-cavity NAND gate with high on-off contrast ratio and an input power for operation of only 10|i\V will be reported in this paper.

Smart meter privacy by suprression of low power frequency components

This paper focuses on the problems associated with privacy protection in smart grid. We will give an overview of a possible realization of a privacy-preserving approach that encompasses privacy-utility tradeoff into a single model. This approach proposes suppression of low power frequency components as a solution to reduce the amount of information leakage from smart meter readings. We will consider the applicability of the procedure to hide the appliance usage with respect to the type of home devices.

A novel high-sensitivity, low-power, liquid crystal temperature sensor

A novel temperature sensor based on nematic liquid crystal permittivity as a sensing magnitude, is presented. This sensor consists of a specific micrometric structure that gives considerable advantages from other previous related liquid crystal (LC) sensors. The analytical study reveals that permittivity change with temperature is introduced in a hyperbolic cosine function, increasing the sensitivity term considerably. The experimental data has been obtained for ranges from −6 °C to 100 °C. Despite this, following the LC datasheet, theoretical ranges from −40 °C to 109 °C could be achieved. These results have revealed maximum sensitivities of 33 mVrms/°C for certain temperature ranges; three times more than of most silicon temperature sensors. As it was predicted by the analytical study, the micrometric size of the proposed structure produces a high output voltage. Moreover the voltage’s sensitivity to temperature response can be controlled by the applied voltage. This response allows temperature measurements to be carried out without any amplification or conditioning circuitry, with very low power consumption.

Impact of N2 plasma power and duration on AlGaN/GaN HEMT

urface treatments have been recently shown to play an active role in electrical characteristics in AlGaN/GaN HEMTs, in particular during the passivation processing [1-4]. However, the responsible mechanisms are partially unknown and further studies are demanding. The effects of power and time N2 plasma pre-treatment prior to SiN deposition using PE-CVD (plasma enhanced chemical vapour deposition) on GaN and AlGaN/GaN HEMT have been investigated. The low power (60 W) plasma pre-treatment was found to improve the electronic characteristics in GaN based HEMT devices, independently of the time duration up to 20 min. In contrast, high power (150 and 210 W) plasma pretreatment showed detrimental effects in the electronic properties (Fig. 1), increasing the sheet resistance of the 2DEG, decreasing the 2DEG charge density in AlGaN/GaN HEMTs, transconductance reduction and decreasing the fT and fmax values up to 40% respect to the case using 60 W N2 plasma power. Although AFM (atomic force microscopy) results showed AlGaN and GaN surface roughness is not strongly affected by the N2-plasma, KFM (Kelvin force microscopy) surface analysis shows significant changes in the surface potential, trending to increase its values as the plasma power is higher. The whole results point at energetic ions inducing polarization-charge changes that affect dramatically to the 2-DEG charge density and the final characteristics of the HEMT devices. Therefore, we conclude that AlGaN surface is strongly sensitive to N2 plasma power conditions, which turn to be a key factor to achieve a good surface preparation prior to SiN passivation.

Power management techniques in an FPGA-Based WSN node for high performance application

In this work, the power management techniques implemented in a high-performance node for Wireless Sensor Networks (WSN) based on a RAM-based FPGA are presented. This new node custom architecture is intended for high-end WSN applications that include complex sensor management like video cameras, high compute demanding tasks such as image encoding or robust encryption, and/or higher data bandwidth needs. In the case of these complex processing tasks, yet maintaining low power design requirements, it can be shown that the combination of different techniques such as extensive HW algorithm mapping, smart management of power islands to selectively switch on and off components, smart and low-energy partial reconfiguration, an adequate set of save energy modes and wake up options, all combined, may yield energy results that may compete and improve energy usage of typical low power microcontrollers used in many WSN node architectures. Actually, results show that higher complexity tasks are in favor of HW based platforms, while the flexibility achieved by dynamic and partial reconfiguration techniques could be comparable to SW based solutions.

Loss model for a high frequency and low load DC/DC synchronous buck converter

This work presents a behavioral-analytical hybrid loss model for a buck converter. The model has been designed for a wide operating frequency range up to 4MHz and a low power range (below 20W). It is focused on the switching losses obtained in the power MOSFETs. Main advantages of the model are the fast calculation time and a good accuracy. It has been validated by simulation and experimentally with one Ga, power transistor and two Si MOSFETs. Results show good agreement between measurements and the model.

Hybrid behavioral-analytical loss model for a high frequency and low load DC/DC buck converter

This work presents a behavioral-analytical hybrid loss model for a buck converter. The model has been designed for a wide operating frequency range up to 4MHz and a low power range (below 20W). It is focused on the switching losses obtained in the power MOSFETs. Main advantages of the model are the fast calculation time (below 8.5 seconds) and a good accuracy, which makes this model suitable for the optimization process of the losses in the design of a converter. It has been validated by simulation and experimentally with one GaN power transistor and three Si MOSFETs. Results show good agreement between measurements and the model

Impact of N2 plasma power discharge on AlGaN/GaN HEMT performance

The effects of power and time conditions of in situ N2 plasma treatment, prior to silicon nitride (SiN) passivation, were investigated on an AlGaN/GaN high-electron mobility transistor (HEMT). These studies reveal that N2 plasma power is a critical parameter to control the SiN/AlGaN interface quality, which directly affects the 2-D electron gas density. Significant enhancement in the HEMT characteristics was observed by using a low power N2 plasma pretreatment. In contrast, a marked gradual reduction in the maximum drain-source current density (IDS max) and maximum transconductance (gm max), as well as in fT and fmax, was observed as the N2 plasma power increases (up to 40% decrease for 210 W). Different mechanisms were proposed to be dominant as a function of the discharge power range. A good correlation was observed between the device electrical characteristics and the surface assessment by atomic force microscopy and Kelvin force microscopy techniques.

Power-Aware Multi-Objective Evolvable Hardware System on an FPGA

Dynamic and Partial Reconfiguration (DPR) allows a system to be able to modify certain parts of itself during run-time. This feature gives rise to the capability of evolution: changing parts of the configuration according to the online evaluation of performance or other parameters. The evolution is achieved through a bio-inspired model in which the features of the system are identified as genes. The objective of the evolution may not be a single one; in this work, power consumption is taken into consideration, together with the quality of filtering, as the measure of performance, of a noisy image. Pareto optimality is applied to the evolutionary process, in order to find a representative set of optimal solutions as for performance and power consumption. The main contributions of this paper are: implementing an evolvable system on a low-power Spartan-6 FPGA included in a Wireless Sensor Network node and, by enabling the availability of a real measure of power consumption at run-time, achieving the capability of multi-objective evolution, that yields different optimal configurations, among which the selected one will depend on the relative “weights” of performance and power consumption.