"...and they won land among the Picts by friendly treaty or the sword": How a re-examination of early historical sources and an analysis of early medieval settlement in north Co. Antrim confirms the validity of traditional accounts of Dál Riatic migration to Scotland from Ulster

Much recent scholarship has been critical of the concept of a Dál Riatic migration to, or colonisation of, Argyll. Scepticism of the accuracy of the early medieval accounts of this population movement, arguing that these are late amendments to early sources, coupled with an apparent lack of archaeological evidence for such a migration have led to its rejection. It is argued here, however, that this rejection has been based on too narrow a reading of historical sources and that there are several early accounts which, while differing in detail, agree on one point of substance, that the origin of Scottish Dál Riata lies in Ireland. Also, the use of archaeological evidence to suggest no migration to Argyll by the Dál Riata is flawed, misunderstanding the nature of early migrations and how they might be archaeologically identified, and it's proposed that there is actually quite a lot of evidence for migration to Argyll by the Dál Riata, in the form of settlement and artefactural evidence, but that it is to be found in Ireland through the mechanism of counterstream migration, rather than in Scotland.

A critical essay on the ancient inhabitants of the northern parts of Britain, or Scotland. Containing an account of the Romans, of the Britains betwixt the walls, of the Caledonians or Picts, and particularly of the Scots. With an appendix of ancient ms. pieces.

Paged continuously.

Annals of the Caledonians, Picts and Scots;

Mode of access: Internet.

Annealing ambient controlled deep defect formation in InP

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.

Effects of annealing ambient on the formation of compensation defects in InP

Positron annihilation lifetime (PAL) and photoinduced current transient spectroscopies (PICTS) have been employed to study the formation of compensation defects in undoped InP under different annealing processes with pure phosphorus (PP) ambience and iron phosphide (IP) ambience, respectively. The different annealing ambiences convert the as-grown n-type undoped InP into two types of semi-insulating (SI) states. The positron average lifetimes of as-grown InP, PP SI-InP, and IP SI-InP are found to be 246, 251, and 243 ps, respectively, which are all longer than the bulk lifetime of 240 ps, indicating the existence of vacancy-type positron-trapping defects. For as-grown InP, VInH4 complexes are the dominant defects. They dissociate into VInHn(0less than or equal tonless than or equal to3) acceptor vacancies under PP ambience annealing, compensating the residual shallow donors and turning the material semi-insulating. In forming IP SI-InP, diffusion of iron into V-In complexes under IP ambience annealing produces the substitutional compensation defect Fe-In, causing a shorter positron average lifetime. The PICTS measurements show that a group of vacancy-type defects has been suppressed by iron diffusion during the annealing process, which is in good agreement with the PAL results. (C) 2003 American Institute of Physics.

Fe-diffusion-induced defects in InP annealed in iron phosphide ambient

Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to study deep levels in semi-insulating (SI) InP prepared by annealing undoped InP in pure phosphorus (PP) and iron phosphide (IP) ambient. Defects are much fewer in IP SI-InP than in PP SI-InP. Deep-level-related PL emission could only be detected in IP SI-InP. The results indicate that Fe diffusion inhibits the thermal formation of a number of defects in annealed InP. A complex defect has been formed in the annealing process in the presence of Fe.

Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers

Semi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC InP at 930 degreesC for 80 h under pure phosphorus ambient (PP) and iron phosphide ambient (IP). The electrical uniformity of annealed undoped SI wafers, along with a Fe-doped as-grown SI LEC InP wafer, has been characterized by whole wafer PL mapping and radial Hall measurements. Defects in these wafers have been detected by photo-induced current transient spectroscopy (PICTS). The results indicated that the uniformity of IP wafer is much better than that of PP wafer and as-grown Fe-doped Si InP wafer. There are fewer traps in undoped SI InP IP wafer than in as grown Fe-doped and undoped SI InP PP wafer, as evidenced by PICTS. The good uniformity of the IP wafer is related to the nonexistence of high concentration of thermally induced defects. The mechanism for this phenomenon is discussed based on the results. (C) 2002 Elsevier Science B.V. All rights reserved.

Annealing ambient controlled deep defect formation in InP

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.

Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers

Semi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC InP at 930 degreesC for 80 h under pure phosphorus ambient (PP) and iron phosphide ambient (IP). The electrical uniformity of annealed undoped SI wafers, along with a Fe-doped as-grown SI LEC InP wafer, has been characterized by whole wafer PL mapping and radial Hall measurements. Defects in these wafers have been detected by photo-induced current transient spectroscopy (PICTS). The results indicated that the uniformity of IP wafer is much better than that of PP wafer and as-grown Fe-doped Si InP wafer. There are fewer traps in undoped SI InP IP wafer than in as grown Fe-doped and undoped SI InP PP wafer, as evidenced by PICTS. The good uniformity of the IP wafer is related to the nonexistence of high concentration of thermally induced defects. The mechanism for this phenomenon is discussed based on the results. (C) 2002 Elsevier Science B.V. All rights reserved.

Des pensées criminelles et des traits de personnalité de fraudeurs incarcérés, sous l’angle de la psychopathie

L’élaboration de programme d’interventions propres aux fraudeurs soulève la question de la particularité de leur personnalité. Des écrits suggèrent que la personnalité des fraudeurs présenterait des similitudes avec les traits psychopathiques. L’objectif de l’étude est donc de décrire et d’explorer ces traits chez des fraudeurs spécialisés incarcérés, et ce, à l’aide des questionnaires Psychopathic Personality Inventory (PPI) et Psychological Inventory of Criminal Thinking Styles (PICTS). Trois groupes de détenus (35 hommes, 17 femmes) ont rempli les questionnaires: fraudeurs spécialisés (n=23), autres délinquants sans crimes violents (ASV, n=19) et autres délinquants avec crimes violents (AAV, n=10). Un groupe d’étudiants (n=430) a aussi complété le PPI, permettant ainsi d’ajouter un groupe de comparaison. Les analyses ont permis de constater que le groupe de fraudeurs diffère peu des autres groupes quant à leurs traits psychopathiques. Cependant, ils sont moins enclins que le groupe d’AAV à adopter des pensées criminelles, fréquentes chez les psychopathes.

Psychometric properties of the parent-infant caregiving touch scale

Recent work in animals suggests that the extent of early tactile stimulation by parents of offspring is an important element in early caregiving. We evaluate the psychometric properties of a new parent-report measure designed to assess frequency of tactile stimulation across multiple caregiving domains in infancy. We describe the full item set of the Parent-Infant Caregiving Touch Scale (PICTS) and, using data from a UK longitudinal Child Health and Development Study, the response frequencies and factor structure and whether it was invariant over two time points in early development (5 and 9 weeks). When their infant was 9 weeks old, 838 mothers responded on the PICTS while a stratified subsample of 268 mothers completed PICTS at an earlier 5 week old assessment (229 responded on both occasions). Three PICTS factors were identified reflecting stroking, holding and affective communication. These were moderately to strongly correlated at each of the two time points of interest and were unrelated to, and therefore distinct from, a traditional measure of maternal sensitivity at 7-months. A wholly stable psychometry over 5 and 9-week assessments was not identified which suggests that behavior profiles differ slightly for younger and older infants. Tests of measurement invariance demonstrated that all three factors are characterized by full configural and metric invariance, as well as a moderate degree of evidence of scalar invariance for the stroking factor. We propose the PICTS as a valuable new measure of important aspects of caregiving in infancy.

Summer is a good time for informal education

Students look forward to summer because usually it means a break from formal and non-formal education. Formal education refers to education in formal educational institutions, such as pre-schools, primary, secondary and tertiary educational institutions and other registered training organisations. Non-formal education refers to organised educational activity outside the established formal system, that is intended to deliver a defined set of learning objectives to an identifiable group of learners (Chemistry in Australia, October 2014, page 33). Informal education refers to all learning outside the formal non-formal educational system; informal education is often associated with life-long learning as it can include reading non-fiction books and scholarly articles, viewing documentaries and other informal professional development. Informal education can also include travel to other countries and climates. Social constructivist theory maintains that learning occurs in social settings; conversely, most learners are limited by their cultural experiences. For example, Australian students have little first-hand experience of sublimation, but this is commonly observed in very cold climates when frost, ice or snow apparently “disappears” as it sublimes to water vapour, without passing through the liquid state. A favourite summertime activity is to go to the movies, especially in air-conditioned cinemas on a hot day or night. Watching movies are a form of virtual travel, and many educators make use of movies to illustrate chemistry concepts. Some movie producers want a sense of authenticity and work hard to get the details right, even though those details might be incidental to the main plot. For example, in Centurion, Roman soldiers fail in their rescue attempt, and are taunted by the Picts for stupidity -- they would have succeeded if they had only realised that metal become brittle in the cold. Another favourite example comes from The Lord of the Rings: The Two Towers, when Bilbo, Samwise and Gollum are crossing the Dead Marshes and see lights that appear to float over the Marshes. These wills-o-the-wisp have been known for centuries, and was the subject of a debate between George Washington and his officers. Washington and Thomas Paine, “the Father of the American Revolution”, believed that the lights were due to a flammable gas released from the marsh, while Washington’s officers believed that the lights were due to a flammable liquid on the surface of the marsh. On Guy Fawkes Night, 5 November, 1783, the Washington-Paine experiment showed that when mud at the bottom of a river was disturbed, bubbles of flammable gas rose to the surface of the water. (Unknown to Washington and Paine, Alessandro Volta had performed a similar experiment in 1776.) A problem with informal education is that it is often unguided. Students may find it difficult to discern the difference between scientific reality and an artistic distortion of reality in novels and movies. Educators have an important role here. If we only teach facts and concepts, learners will be dependent on a teacher. If however, we foster students’ curiosity and ability to exercise judgement, they will be able to learn for themselves, not just during the summer, but also in every season of every year.

4H silicon carbide particle detectors: study of the defects induced by high energy neutron irradiation

During the last decade advances in the field of sensor design and improved base materials have pushed the radiation hardness of the current silicon detector technology to impressive performance. It should allow operation of the tracking systems of the Large Hadron Collider (LHC) experiments at nominal luminosity (1034 cm-2s-1) for about 10 years. The current silicon detectors are unable to cope with such an environment. Silicon carbide (SiC), which has recently been recognized as potentially radiation hard, is now studied. In this work it was analyzed the effect of high energy neutron irradiation on 4H-SiC particle detectors. Schottky and junction particle detectors were irradiated with 1 MeV neutrons up to fluence of 1016 cm-2. It is well known that the degradation of the detectors with irradiation, independently of the structure used for their realization, is caused by lattice defects, like creation of point-like defect, dopant deactivation and dead layer formation and that a crucial aspect for the understanding of the defect kinetics at a microscopic level is the correct identification of the crystal defects in terms of their electrical activity. In order to clarify the defect kinetic it were carried out a thermal transient spectroscopy (DLTS and PICTS) analysis of different samples irradiated at increasing fluences. The defect evolution was correlated with the transport properties of the irradiated detector, always comparing with the un-irradiated one. The charge collection efficiency degradation of Schottky detectors induced by neutron irradiation was related to the increasing concentration of defects as function of the neutron fluence.