Linear transconductor with flipped voltage follower in 130 nm CMOS

This paper presents a modified design method for linear transconductor circuit in 130 nm CMOS technology to improve linearity, robustness against process induced threshold voltage variability and reduce harmonic distortion. Source follower in the adaptively biased differential pair (ABDP) linear transconductor circuit is replaced with flipped voltage follower to improve the efficiency of the tail current source, which is connected to a conventional differential pair. The simulation results show the performance of the modified circuit also has better speed, noise performance and common mode rejection ratio compared to the ABDP circuit.

Usando um voltímetro para medir tempo

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Conversor para pulsos elétricos de alta tensão, de curta duração, para processos de geração de ozônio

Pós-graduação em Engenharia Elétrica - FEIS