Detect the sub-wavelength data by applying a very-small-aperture laser

We present a theoretical and experimental research about applying a very-small-aperture laser (VSAL) to detect sub-wavelength data. Near-field distribution of a VSAL, which is essential for the application of such near-field devices, will be affected by the sample or fiber posited in the near-field region of the aperture. When the device is applied to detect the sub-wavelength data, the real resolution depends on the near-field spot size, the divergent angle of the beam and the distance from the aperture to the sample. Experimental results, including the near-field detection of the spot and detection of the sub-wavelength data by using the VSAL, are presented in this paper. We realize the two dimensional scanning about the sub-wavelength data (with the width 600 nm) by employing a VSAL with a 300 nm x 300 nm aperture.

Fabrication process and power and lifetime characteristics of very-small-aperture laser

High output power very-small-aperture laser has been created on 650 nm edge emitting laser diodes. The far-field output power is 0.4 mW at the 25 mA driving current, and the highest output power exceeds 1 mW. The special fabrication process is described and the failure mechanism leading to the short lifetime of the devices is discussed.

High-output very small aperture laser and its near-field distribution properties - art. no. 60200L

A Very-Small-Aperture Laser with a 250 X 500 nm(2) aperture has been created on a 650nm edge emitting LD. The highest far-field output power is 1.9mW and the power per unit emission area is about 15 MW/mu m(2). The special fabrication process and high output power mechanism are demonstrated respectively. The near-field distribution properties are also analyzed theoretically and experimentally.

Fabrication of Windowed Very-Small-Aperture Laser Diodes

A windowed very-small-aperture laser 9VSAL0 source for use in high-resolution near field optical data storage is fabricated. The windowed regions are introduced to avoid shorting the pn junction with metal coating and suppress the COD effect. It facilitates producing VSAL by simplified technology and improves the laser performance. A VSAL with 400nm small sperture is demonstrated by focused ion beam (FIB0 and the output power is 0.3mW at 31mA.

Oil-immersion or solid-immersion power enhancement of very-small-aperture lasers

An analysis of the enhancement of light transmission through a sub-wavelength aperture by oil- or solid-immersion is presented in this letter. An output power enhancement phenomenon related to the oil-immersion or solid-immersion mechanism is realized experimentally and reported for a very small aperture laser, which is an agreement with simulation analysis. This phenomenon could be useful for future optical data storage, microscopy and lithography.

Enhancement of the far-field output power and the properties of the very-small-aperture lasers

We report on a VSAL structure fabricated by a 650 nm edge emitting laser diode with an Au-coated facet and an aperture size of 250 x 500 nm. The far field output power can maintain at 1 mW and the power density is 7.5 mW/mu m(2). Some properties of the VSAL including the threshold current change, the red-shift of the spectral position, and the strong relative-intensity-noise are presented. The physical mechanisms responsible for these phenomena are also discussed, which may contribute to the understanding and application of the potential device for near-field optics.

Performance analysis of very-small-aperture lasers

The fabrication of very-small-aperture lasers is demonstrated, and their performance is analyzed. Because of strong optical feedback caused by a gold film on the front facet of the laser, its behavior changes: The threshold current decreases, the density of light inside the laser diode and the redshift effect of the spectra are enhanced, and the laser diode's lifetime is shorter than that of common laser diodes with large driving current. (c) 2005 Optical Society of America

Metal film effect on performance of very-small-aperture lasers

Special characteristics of very-small-aperture lasers are observed, including threshold current change, red shift of the spectral position, and short lifetime at low drive current. Physical mechanisms that underlie these special characteristics are analyzed: we find that optical feedback caused by a metal film and heat accumulation inside the laser diode lead to the special characteristics of VSALs, such as threshold current change, red shift of the spectral position, and short lifetime at low drive current, etc. Theoretical simulation is in good agreement with the experimental results.

Enhancement of the far-field output power and the beam properties of plasmonic very small aperture lasers

The properties of plasmonic very small aperture lasers are shown: these integrate surface plasmon structures with very small aperture lasers. The transmission field can be confined to a spot of subwavelength width in the far field, and according to the finite difference time domain simulation results the focal length of the spot can be modulated using different ring periods. Scanning of the subwavelength gating in the far field has been realized numerically. Such a device can be used with a high-resolution far-field scanning optical microscope.

Mechanism of enhancing output power of plasmonic very-small-aperture lasers

Light transmission through a single subwavelength slit surrounded by periodic grooves in layered films consisting of Au and dielectric material is analyzed by the finite difference time domain method in two dimensions. The results show that the transmission field can be enhanced by the corrugations on the output plane, which is a supplementary explanation for the extraordinary optical transmission.

Plasmonic very-small-aperture lasers

The fabrication of plasmonic very-small-aperture lasers is demonstrated in this letter. It is an integration of the surface plasmon structures and very-small-aperture lasers (VSAL). The experimental and numerical results demonstrate that the transmission field can be confined to a spot with subwavelength width in the far field, and the power output can be enhanced 140% of the normal VSAL. Such a device can be useful in the application of a high resolution far-field scanning optical microscope. (C) 2007 American Institute of Physics.

Near-field scanning optical microscopy with an active probe

A near-field scanning optical microscopy (NSOM) system employing a very-small-aperture laser (VSAL) as an active probe is reported in this Letter. The VSAL in our experiment has an aperture size of 300 nmx300 nm and a near-field spot size of about 600 nm. The resolution of the NSOM system with the VSAL can reach about 600 nm, and even 400 nm. Considering the high output power of the VSAL, such a NSOM system is a potentially useful tool for nanodetection, data storage, nanolithography, and nanobiology.

Sub-wavelength beam lasers with surface plasmon structures

The simulation of a plasmonic very-small-aperture laser is demonstrated in this paper. It is an integration of the surface plasmon structure and very-small-aperture laser (VSAL). The numerical results demonstrate that the transmission field can be confined to a spot with subwavelength width in the far field (3.5 mu m far from the emitting surface), and the output power density can be enhanced over 30 times of the normal VSAL. Such a device can be useful in the application of a high resolution far-field scanning optical microscope.

The effect of very small air gaps on small field dosimetry

The purpose of this study was to investigate the effect of very small air gaps (less than 1 mm) on the dosimetry of small photon fields used for stereotactic treatments. Measurements were performed with optically stimulated luminescent dosimeters (OSLDs) for 6 MV photons on a Varian 21iX linear accelerator with a Brainlab μMLC attachment for square field sizes down to 6 mm × 6 mm. Monte Carlo simulations were performed using EGSnrc C++ user code cavity. It was found that the Monte Carlo model used in this study accurately simulated the OSLD measurements on the linear accelerator. For the 6 mm field size, the 0.5 mm air gap upstream to the active area of the OSLD caused a 5.3 % dose reduction relative to a Monte Carlo simulation with no air gap. A hypothetical 0.2 mm air gap caused a dose reduction > 2 %, emphasizing the fact that even the tiniest air gaps can cause a large reduction in measured dose. The negligible effect on an 18 mm field size illustrated that the electronic disequilibrium caused by such small air gaps only affects the dosimetry of the very small fields. When performing small field dosimetry, care must be taken to avoid any air gaps, as can be often present when inserting detectors into solid phantoms. It is recommended that very small field dosimetry is performed in liquid water. When using small photon fields, sub-millimetre air gaps can also affect patient dosimetry if they cannot be spatially resolved on a CT scan. However the effect on the patient is debatable as the dose reduction caused by a 1 mm air gap, starting out at 19% in the first 0.1 mm behind the air gap, decreases to < 5 % after just 2 mm, and electronic equilibrium is fully re-established after just 5 mm.

A practical and theoretical definition of very small field size for radiotherapy output factor measurements

Purpose This work introduces the concept of very small field size. Output factor (OPF) measurements at these field sizes require extremely careful experimental methodology including the measurement of dosimetric field size at the same time as each OPF measurement. Two quantifiable scientific definitions of the threshold of very small field size are presented. Methods A practical definition was established by quantifying the effect that a 1 mm error in field size or detector position had on OPFs, and setting acceptable uncertainties on OPF at 1%. Alternatively, for a theoretical definition of very small field size, the OPFs were separated into additional factors to investigate the specific effects of lateral electronic disequilibrium, photon scatter in the phantom and source occlusion. The dominant effect was established and formed the basis of a theoretical definition of very small fields. Each factor was obtained using Monte Carlo simulations of a Varian iX linear accelerator for various square field sizes of side length from 4 mm to 100 mm, using a nominal photon energy of 6 MV. Results According to the practical definition established in this project, field sizes < 15 mm were considered to be very small for 6 MV beams for maximal field size uncertainties of 1 mm. If the acceptable uncertainty in the OPF was increased from 1.0 % to 2.0 %, or field size uncertainties are 0.5 mm, field sizes < 12 mm were considered to be very small. Lateral electronic disequilibrium in the phantom was the dominant cause of change in OPF at very small field sizes. Thus the theoretical definition of very small field size coincided to the field size at which lateral electronic disequilibrium clearly caused a greater change in OPF than any other effects. This was found to occur at field sizes < 12 mm. Source occlusion also caused a large change in OPF for field sizes < 8 mm. Based on the results of this study, field sizes < 12 mm were considered to be theoretically very small for 6 MV beams. Conclusions Extremely careful experimental methodology including the measurement of dosimetric field size at the same time as output factor measurement for each field size setting and also very precise detector alignment is required at field sizes at least < 12 mm and more conservatively < 15 mm for 6 MV beams. These recommendations should be applied in addition to all the usual considerations for small field dosimetry, including careful detector selection.