Structural and Electrical Investigation of C 60 –Graphene Vertical Heterostructures

Graphene, with its unique electronic and structural qualities, has become an important playground for studying adsorption and assembly of various materials including organic molecules. Moreover, organic/graphene vertical structures assembled by van der Waals interaction have potential for multifunctional device applications. Here, we investigate structural and electrical properties of vertical heterostructures composed of C60 thin film on graphene. The assembled film structure of C60 on graphene is investigated using transmission electron microscopy, which reveals a uniform morphology of C60 film on graphene with a grain size as large as 500 nm. The strong epitaxial relations between C60 crystal and graphene lattice directions are found, and van der Waals ab initio calculations support the observed phenomena. Moreover, using C60-graphene heterostructures, we fabricate vertical graphene transistors incorporating n-type organic semiconducting materials with an on/off ratio above 3 × 10(3). Our work demonstrates that graphene can serve as an excellent substrate for assembly of molecules, and attained organic/graphene heterostructures have great potential for electronics applications.

Effect of gate dielectric scaling in nanometer scale vertical thin film transistors

A short channel vertical thin film transistor (VTFT) with 30 nm SiN x gate dielectric is reported for low voltage, high-resolution active matrix applications. The device demonstrates an ON/OFF current ratio as high as 10 9, leakage current in the fA range, and a sub-threshold slope steeper than 0.23 V/dec exhibiting a marked improvement with scaling of the gate dielectric thickness. © 2011 American Institute of Physics.

Vertical structure p-type permeable metal-base organic transistors based on N,N '-diphentyl-N,N '-bis(1-naphthylphenyl)-1,1 '-biphenyl-4,4 '-diamine

In this article, vertical structure p-type permeable-base organic transistors were proposed and demonstrated. A hole-type organic semiconductor N,N-'-diphentyl-N,N-'-bis(1-naphthylphenyl)-1,1(')-biphenyl-4,4(')-diamine was used as emitter and collector. In the permeable-base transistors, the metal base was formed by firstly coevaporating Al and Ca in vacuum and then annealing at 120 degrees C for 5 min in air, followed by a thin Al deposition. These devices show a common-base current gain of near 1.0 and a common-emitter current gain of similar to 270.

Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics

In this work we present a permeable base transistor consisting of a 60 nm thick N,N'diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine layer or a 40 nm thick 2,6-diphenyl-indenofluorene layer as the emitter, a CalAl/Ca multilayer as the metal base, and p-Si as collector. In the base, the Ca layers are 5 nm thick and the Al layer was varied between 10 and 40 nm. the best results obtained with a 20 nm thick layer. The devices present common-base current gain with both organic layer and silicon acting as emitter, but there is only observable common-emitter current gain when the organic semiconductor acts as emitter. The obtained common-emitter current gain, similar to 2, is independent on collector-emitter voltage, base current and organic emitter in a reasonable wide interval. Air exposure or annealing of the base is necessary to achieve these characteristics, indicating that an oxide layer is beneficial to proper device operation.

Influence of Band Non-Parabolicity on Few Ballistic Properties of III-V Quantum Wire Field Effect Transistors Under Strong Inversion

A simplified yet analytical approach on few ballistic properties of III-V quantum wire transistor has been presented by considering the band non-parabolicity of the electrons in accordance with Kane's energy band model using the Bohr-Sommerfeld's technique. The confinement of the electrons in the vertical and lateral directions are modeled by an infinite triangular and square well potentials respectively, giving rise to a two dimensional electron confinement. It has been shown that the quantum gate capacitance, the drain currents and the channel conductance in such systems are oscillatory functions of the applied gate and drain voltages at the strong inversion regime. The formation of subbands due to the electrical and structural quantization leads to the discreetness in the characteristics of such 1D ballistic transistors. A comparison has also been sought out between the self-consistent solution of the Poisson's-Schrodinger's equations using numerical techniques and analytical results using Bohr-Sommerfeld's method. The results as derived in this paper for all the energy band models gets simplified to the well known results under certain limiting conditions which forms the mathematical compatibility of our generalized theoretical formalism.

On the Geometrically Dependent Quasi-Saturation and g(m) Reduction in Advanced DeMOS Transistors

This paper reveals an early quasi-saturation (QS) effect attributed to the geometrical parameters in shallow trench isolation-type drain-extended MOS (STI-DeMOS) transistors in advanced CMOS technologies. The quasi-saturation effect leads to serious g(m) reduction in STI-DeMOS. This paper investigates the nonlinear resistive behavior of the drain-extended region and its impact on the particular behavior of the STI-DeMOS transistor. In difference to vertical DMOS or lateral DMOS structures, STI-DeMOS exhibits three distinct regions of the drain extension. A complete understanding of the physics in these regions and their impact on the QS behavior are developed in this paper. An optimization strategy is shown for an improved g(m) device in a state-of-the-art 28-nm CMOS technology node.

Direct growth of horizontally aligned carbon nanotubes between electrodes and its application to field-effect transistors

This paper presents direct growth of horizontally aligned carbon nanotubes (CNTs) between two predefined various inter-spacing up to tens of microns of electrodes (pads) and its use as CNT field-effect transistors (CNT-FETs). The catalytic metals were prepared, consisting of iron (Fe), aluminum (Al) and platinum (Pt) triple layers, on the thermal silicon oxide substrate (Pt/Al/Fe/SiO2). Scanning electron microscopy measurements of CNT-FETs from the as-grown samples showed that over 80% of the nanotubes are grown across the catalytic electrodes. Moreover, the number of CNTs across the catalytic electrodes is roughly controllable by adjusting the growth condition. The Al, as the upper layer on Fe electrode, not only plays a role as a barrier to prevent vertical growth but also serves as a porous medium that helps in forming smaller nano-sized Fe particles which would be necessary for lateral growth of CNTs. Back-gate field effect transistors were demonstrated with the laterally aligned CNTs. The on/off ratios in all the measured devices are lower than 100 due to the drain leakage current. ©2010 IEEE.

Large current gain and low operational voltage permeable metal-base organic transistors based on Au/Al double layer metal base

In order to realize the common-emitter characteristics of the tris(8-hydroxyquinoline) aluminium (Alq(3))-based organic transistors, we used Au/Al double metal layer as the base, thus the vertical metal-base transistors with structure of Al/n-Si/Au/Al/Alq(3)/LiF/Al were constructed. It was found that the contact properties between the base and the organic semiconductors play an important role in the device performance. The utilization of Au/Al double layer metal base allows the devices to operate at high gain in the common-emitter and common-base mode at low operational voltage.

Organic thin-film transistors in sandwich configuration

Organic thin-film transistors (OTFTs) having source/drain electrodes sandwiched between copper phthalocyanine (CuPc) and cobalt phthalocyanine (CoPc) layers, CuPc/CoPc SC OTFTs, are investigated. Comparing their properties with that of CuPc-based top-contact OTFT, field-effect mobility increases from 0.04 to 0.11 cm(2)/Vs, threshold voltage shifts from -13.8 to -8.9 V, and the current on/off ratio maintains at a level of 10(5). A top-contact OTFT with a layer of CuPc and a layer of CoPc (10%)-CuPc mixture reveals that the combination of CuPc and CoPc enhances charge injection from the source electrode into the active layer and increases the off-state current. The sandwich configuration increases the field-effect mobility, reduce the threshold voltage, and improve the on/off ratio at the same time. Our results indicate that using a double-layer of active organic materials in sandwich configuration is an effective way to improve OTFT performance.

Copper phthalocyanine based hybrid p-type permeable-base transistor in vertical architecture

We demonstrate the production of copper phthalocyanine (CuPc) based p-type hybrid permeable-base transistors, which operate at low voltages having high common-base current gains. These transistors are prepared by evaporating a thin metal layer (Ag or Al) that acts as base on top of a Si substrate that acts as collector. In the sequence CuPc and Au are thermally sublimated to produce the emitter, constituting a quite simple device production procedure with the additional advantage of allowing higher integration due to its vertical architecture.

High current density tris(8-hydroxyquinoline) aluminum-based hybrid transistor in vertical architecture

We report the construction of hybrid permeable-base transistors, in vertical architecture, using tris(8-hydroxyquinoline) aluminum as emitter, a thin gold layer as base, and n-type silicon as collector. These transistors present high common-base current gain, can be operated at low driving voltages, and allow high current density.

Organic heterostructure approach for multifunctional light-emitting field-effect transistors

The possibility of combining different functionalities in a single device is of great relevance for further development of organic electronics in integrated components and circuitry. Organic light-emitting transistors (OLETs) have been demonstrated to be able to combine in a single device the electrical switching functionality of a field-effect transistor and the capability of light generation. A novel strategy in OLET realization is the tri-layer vertical hetero-junction. This configuration is similar to the bi-layer except for the presence of a new middle layer between the two transport layers. This “recombination” layer presents high emission quantum efficiency and OLED-like (Organic Light-Emitting Diode) vertical bulk mobility value. The key idea of the vertical tri-layer hetero-junction approach in realizing OLETs is that each layer has to be optimized according to its specific function (charge transport, energy transfer, radiative exciton recombination). Clearly, matching the overall device characteristics with the functional properties of the single materials composing the active region of the OFET, is a great challenge that requires a deep investigation of the morphological, optical and electrical features of the system. As in the case of the bi-layer based OLETs, it is clear that the interfaces between the dielectric and the bottom transport layer and between the recombination and the top transport layer are crucial for guaranteeing good ambipolar field-effect electrical characteristics. Moreover interfaces between the bottom transport and the recombination layer and between the recombination and the top transport layer should provide the favourable conditions for the charge percolation to happen in the recombination layer and form excitons. Organic light emitting transistor based on the tri-layer approach with external quantum efficiency out-performing the OLED state of the art has been recently demonstrated [Capelli et al., Nat. Mater. 9 (2010) 496-503] widening the scientific and technological interest in this field of research.