Swift heavy ion induced structural, iono and photoluminescence properties of beta-CaSiO3:Dy3+ nanophosphor

CaSiO3:Dy3+ (1-5 mol%) nanophosphors have been prepared by a low temperature solution combustion method. The structural and luminescence (ionoluminescence; IL and photoluminescence; PL) studies have been carried out for pristine and ion irradiated samples. The XRD patterns of pristine sample show a prominent peak at (320) for the monoclinic structure of beta-CaSiO3. Upon ion irradiation, the intensity of the prominent peak is decreased at the fluence of 7.81 x 10(12) ions cm(-2) and at higher fluence of 15.62 x 10(12) ions cm(-2), the prominent peak completely vanishes. The decrease in peak intensity might be due to the stress induced point defects. On-line IL and in situ PL studies have been carried out on pelletized samples bombarded with 100 MeV Si7+ ions with fluences in the range (7.81-15.62) x 10(12) ions cm(-2). The characteristic emission peaks at 481,574, 664 and 754 nm recorded in both IL and PL are attributed to the luminescence centers activated by Dy3+ ions. It is found that IL and PL emissions intensity decreases with increase in Si7+ ion fluence. The decrease in intensity can be due to the destruction of Si-O-Si and O-Si-O type species present on the surface of the sample. FTIR studies also confirm the Si-O-Si and O-Si-O type species observed to be sensitive for swift heavy ion (SHI) irradiated samples. (C) 2012 Elsevier B.V. All rights reserved.

Modification of C-doped a-SiO2 after Swift Heavy-Ion Irradiation

Amorphous SiO2 (a-SiO2) thin films were thermally grown on single-crystalline silicon. These a-SiO2/Si samples were first implanted (C-doped) with 100-keV carbon ion at room temperature (RT) at a dose of 5.0 x 10(17) C-ions/cm(2) and were then irradiated at RT by using 853 MeV Pb ions at closes of 5.0 x 10(11), 1.0 x 10(12), 2.0 x 10(12) and 5.0 x 10(12) Pb-ions/cm(2), respectively. The microstructures and the photoluminescence (PL) properties of these samples induced by Pb ions were investigated using fluorescence spectroscopy and transmission electron microscopy. We found that high-energy Pb-ion irradiation could induce the formation of a new phase and a change in the PL property of C-doped a-SiO2/Si samples. The relationship between the observed phenomena and the ion irradiation parameters is briefly discussed.

Structural modification of C-doped SiO2 induced by swift heavy ion irradiations

Thermally grown amorphous SiO2 samples were implanted at room temperature (RT) with 120 keV C-ions to a dose ranging from 1.0 x 10(16) to 8.6 x 10(17)C ions/cm(2), then irradiated at RT with 950 MeV Pb, 345 or 1754 MeV Xe ions to a fluence in the region from 1.0 x 10(11) to 3.8 x 10(12) ions/cm(2), respectively. The irradiated samples were investigated using micro-FTIR and micro-Raman spectroscopes. It was found that new chemical bonds such as Si-C, C=C(O), C C and Si(C)-O-C bonds formed significantly in the C-doped SiO2 films after heavy ion irradiations. The evolution of Si-O-C bonds and possible mechanism of structural modification in C-doped SiO2 induced by swift heavy ion irradiations were discussed.

Preparation of Microporous Membranes by Swift Heavy Ion Irradiation and Impedance Characterization

Polypropylene (PP) microporous membranes were successfully prepared by swift heavy ion irradiation and track-etching. Polypropylene foils were irradiated with Au-197 ions of kinetic energy 11.4 MeV.u(-1) (total energy of 2245.8 MeV) and fluence 1x10(8) ions.cm(-2) at normal incidence. The damaged regions produced by the gold ions along the trajectories were etched in H2SO4 and K2Cr2O7 solutions leading to the formation of cylindrical pores in the membranes. The pore diameters of the PP microporous membranes increased from 380 to 1610 nm as the etching time increased from 5 to 30 min. The surface and cross-section morphologies of the porous membranes were characterized by scanning electron microscopy (SEM). The micropores in the membranes were found to be cylindrical in shape, homogeneous in distribution, and equal in size. Some mathematical relations of the porosity of the PP microporous membranes were established by analytic derivation. The microporous membranes were used in lithium-ion batteries to measure their properties as separators. The electrical conductivity of the porous membrane immersed in liquid electrolyte was found to be comparable to that of commercial separators by electrochemical impedance spectroscopy (EIS). The results showed that the porosity and electrical conductivity were dependent on the ion fluence and etching time. By adjusting these two factors, microporous membranes with good porosity and electrical conductivity were made that met the requirements for commercial use.

重离子辐照制备电池用微孔膜及其阻抗性质；Preparation of Microporous Membranes by Swift Heavy Ion Irradiation and Impedance Characterization

利用离子辐照结合径迹蚀刻方法制备聚丙烯(PP)微孔膜.用加速器产生的单核能为11.4MeV·u-1(总能量2245.8MeV)的197Au离子束辐照PP膜,剂量为1×108ions·cm-2.辐照后PP膜沿离子路径产生损伤区域,用硫酸与重铬酸钾的混合液进行蚀刻(5-30min),制备出孔径为380-1610nm的聚丙烯微孔膜.对膜的表面和断面形貌进行表征,微孔膜的孔径大小及空间分布均匀,孔道上下贯通,形状近似为圆柱形.给出了微孔膜的孔隙率理论公式.将制备的聚丙烯微孔膜用作锂离子电池隔膜,用电化学阻抗谱(EIS)测定浸满电解液的微孔膜的离子电导率,并与商用隔膜进行比较.分析表明辐照剂量和孔径大小均会影响膜的孔隙率和离子电导率,选择合适的辐照剂量和蚀刻时间,可以制备出孔隙率和离子电导率符合应用标准的聚丙烯微孔膜.

利用重离子辐照技术制备锂离子电池隔膜；Preparation Lithium-ion Battery Separator by Swift Heavy Ion Irradiation Methods

用能量11.4MeV/u和注量1×108ions/cm2的197Au离子垂直辐照聚丙烯薄膜,通过电导测量法监测温度、硫酸浓度和重铬酸钾浓度对径迹蚀刻速率的影响,得到合适的蚀刻条件;成功制备出孔径范围在600—1000nm的重离子径迹聚丙烯孔膜,并用场发射扫描电镜对孔的形状及孔径大小进行了表征,对孔洞锥角的形成进行了分析,为重离子辐照技术制备锂离子电池隔膜提供了实验数据。

Effects and Modifications in In/Se and In/Sb Systems by Swift Heavy Ion Irradiation

Department of Physics, Cochin University of Science and Technology