Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling

The depth distribution of the strain-related tetragonal distortion e(T) in the GaN epilayer with low-temperature AlN interlayer (LT-AlN IL) on Si(111) substrate is investigated by Rutherford backscattering and channeling. The samples with the LT-AlN IL of 8 and 16 nm thickness are studied, which are also compared with the sample without the LT-AlN IL. For the sample with 16-nm-thick LT-AlN IL, it is found that there exists a step-down of e(T) of about 0.1% in the strain distribution. Meanwhile, the angular scan around the normal GaN <0001> axis shows a tilt difference about 0.01degrees between the two parts of GaN separated by the LT-AlN IL, which means that these two GaN layers are partially decoupled by the AlN interlayer. However, for the sample with 8-nm-thick LT-AlN IL, neither step-down of e(T) nor the decoupling phenomenon is found. The 0.01degrees decoupled angle in the sample with 16-nm-thick LT-AlN IL confirms the relaxation of the LT-AlN IL. Thus the step-down of e(T) should result from the compressive strain compensation brought by the relaxed AlN interlayer. It is concluded that the strain compensation effect will occur only when the thickness of the LT-AlN IL is beyond a critical thickness. (C) 2004 American Institute of Physics.

Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition

The structural and optical properties of GaAsSb/GaAs quantum wells (QWs) and strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP QWs grown on a GaAs substrate by molecular beam epitaxy are investigated using high-resolution x-ray diffraction and photoluminescence (PL) measurements. We demonstrated that the insertion of tensile GaAsP layers into the active region of GaAsSb/GaAs QWs effectively improves the structural and optical quality. Even the Sb composition is as high as 0.39. The PL spectra at 11 K and room temperature indicate that the PL peak of strain-compensated QWs has a narrower linewidth and higher intensity in comparison to the sample without strain compensation. The results of PL peak blueshift with increasing excitation show the strain-compensated GaAsSb/GaAs interface characteristic of type-I band alignment. (C) 2003 American Institute of Physics.

Strain-compensated quantum cascade lasers operating at room temperature

Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP substrate using molecular beam epitaxy is reported. The epitaxial quality is demonstrated by the abundant narrow satellite peaks of double-crystal X-ray diffraction and cross-section transmission electron microscopy of the QC laser wafer. Laser action in quasi-continuous wave operation is achieved at lambda approximate to 3.6-3.7 mum at room temperature (34 degreesC) for 20 mum x 1.6 mm devices, with peak output powers of similar to 10.6mW and threshold current density of 2.7kA/cm(2) at this temperature. (C) 2000 Published by Elsevier Science B.V.

High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy

High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum well (QW) samples with higher (42.5%) indium content were successfully grown by molecular-beam epitaxy. The cross-sectional transmission electron microscopy measurements reveal that there are no structural defects in such high indium content QWs. The room-temperature photoluminescence peak intensity of the GaIn0.425NAs/GaAs (6 nm/20 nm) 3QW is higher than, and the full width at half maximum is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality caused by strain compensation effect of introducing N to the high indium content InGaAs epilayer. (C) 2005 American Institute of Physics.

Band gap narrowing in heavily B doped Si1-xGex strained layers

This paper presents a comprehensive study of the effect of heavy B doping and strain in Si1-xGex strained layers. On the one hand, bandgap narrowing (BGN) will be generated due to the heavy doping, on the other hand, the dopant boron causes shrinkage in the lattice constant of SiGe materials, thus will compensate for part of the strain. Taking the strain compensation of B into account for the first time and uesing the with semi-empirical method, the Jain-Roulston model is modified. And the real BGN distributed between the conduction and valence bands is calculated, which is important for the accurate design of SiGe HBTs.

Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer

Pseudomorphic Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As (y1 greater than or equal to 0.52) modulation-doped heterostructures with an intentional nonlattice-matched buffer layer were successfully grown by molecular beam epitaxy on (100)InP substrates. Fourier transform photoluminescence and double crystal x-ray diffraction measurements show a superior crystalline quality in the high In content channel, when In mole fraction increases from y1=0.52 to 0.55 in the Iny1Al1-y1As buffer layer. In this case, an increasing of 16.3% and 23.5% for conductivity (mu xn(s)) and mobility, related to the strain compensation in the In0.73Ga0.27As channel, was achieved, respectively, comparing to the structure containing a well-lattice matched buffer layer. With increasing the mismatch further (y1=0.58), a morphology with cross-hatched pattern was observed due to the onset of a large amount of misfit dislocations, and the electronic characterization is not able to be improved continuously. Because we can realize high quality strained P-HEMTs in a relative wide range of equivalent beam flux (EBF) ratios, the stringent control over the constant EBF is not indispensable on this In-based material system. (C) 1997 American Vacuum Society.

1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn0.425NAs/GaAs (6 nm / 20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellosung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical study on the coupled GaAsSb/GaAs double quantum wells

The structural and optical properties of GaAsSb/GaAs-based quantum wells (QWs) are investigated. The interface quality of GaAsSb/GaAs/GaAsP coupled double (CD) QW structures is improved due to the strain compensation of epitaxial layers. The CD QWs possess a W-shape of energy band structure, and the optical properties display the features characteristic of a type-IQW when the GaAsSb layer thickness is thin enough.

Work and Family: a complex interplay. An Italian application of the DISC Model on health care workers

The present thesis investigates the issue of work-family conflict and facilitation in a sanitarian contest, using the DISC Model (De Jonge and Dormann, 2003, 2006). The general aim has been declined in two empirical studies reported in this dissertation chapters. Chapter 1 reporting the psychometric properties of the Demand-Induced Strain Compensation Questionnaire. Although the empirical evidence on the DISC Model has received a fair amount of attention in literature both for the theoretical principles and for the instrument developed to display them (DISQ; De Jonge, Dormann, Van Vegchel, Von Nordheim, Dollard, Cotton and Van den Tooren, 2007) there are no studies based solely on psychometric investigation of the instrument. In addition, no previous studies have ever used the DISC as a model or measurement instrument in an Italian context. Thus the first chapter of the present dissertation was based on psychometric investigation of the DISQ. Chapter 2 reporting a longitudinal study contribution. The purpose was to examine, using the DISC model, the relationship between emotional job characteristics, work-family interface and emotional exhaustion among a health care population. We started testing the Triple Match Principle of the DISC Model using solely the emotional dimension of the strain-stress process (i.e. emotional demands, emotional resources and emotional exhaustion). Then we investigated the mediator role played by w-f conflict and w-f facilitation in relation to emotional job characteristics and emotional exhaustion. Finally we compared the mediator model across workers involved in chronic illness home demands and workers who are not involved. Finally, a general conclusion, integrated and discussed the main findings of the studies reported in this dissertation.

Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

Microstructural and optical properties of InAs-inserted and reference single GaAsN/GaAs quantum-well (QW) structures grown by metalorganic chemical vapor deposition were investigated using cross-sectional transmission electron microscopy and photoluminescence (PL). Significant enhancement of PL intensity and a blueshift of PL emission were observed from the InAs-inserted GaAsN/GaAs QW structure, compared with the single GaAsN/GaAs QW structure. Strain compensation and In-induced reduction of N incorporation are suggested to be two major factors affecting the optical properties. (C) 2004 American Institute of Physics.

A high sensitive fiber Bragg grating strain sensor with automatic temperature compensation

A high sensitive fiber Bragg grating (FBG) strain sensor with automatic temperature compensation is demonstrated. FBG is axially linked with a stick and their free ends are fixed to the measured object. When the measured strain changes, the stick does not change in length, but the FBG does. When the temperature changes, the stick changes in length to pull the FBG to realize temperature compensation. In experiments, 1.45 times strain sensitivity of bare FBG with temperature compensation of less than 0.1 nm Bragg wavelength drift over 100 ◦C shift is achieved.

Temperature compensation in CNT-composite distributed strain sensors

A temperature compensation method is proposed for CNT-composite strain sensors. CNT-composite sensors are fabricated on an elastic polymer substrate having known thermo-mechanical properties to introduce thermo-mechanical strain and further calibration of the sensor. Strain is induced on the sensor by bending the substrate as a cantilever configuration. Response of the sensor is measured using a bridge circuit method. Induced strain in the beam is determined using beam theory. The sensors are characterized for different CNT concentrations and at various temperatures. A model based temperature compensation scheme is proposed and verified experimentally. The result proves the ability of CNT-nanocomposite strain sensors to be used under varying temperature applications. A method is proposed to determine the strain and temperature simultaneously. The CNT sensors are simple to fabricate in complex patterns with excellent repeatability and do not require bonding layer.

Fibre-optic strain sensor system with temperature compensation for arch bridge condition monitoring

This paper presents an innovative sensor system, created specifically for new civil engineering structural monitoring applications, allowing specially packaged fiber grating-based sensors to be used in harsh, in-the-field measurement conditions for accurate strain measurement with full temperature compensation. The sensor consists of two fiber Bragg gratings that are protected within a polypropylene package, with one of the fiber gratings isolated from the influence of strain and thus responding only to temperature variations, while the other is sensitive to both strain and temperature. To achieve this, the temperature-monitoring fiber grating is slightly bent and enclosed in a metal envelope to isolate it effectively from the strain. Through an appropriate calibration process, both the strain and temperature coefficients of each individual grating component when incorporated in the sensor system can be thus obtained. By using these calibrated coefficients in the operation of the sensor, both strain and temperature can be accurately determined. The specific application for which these sensors have been designed is seen when installed on an innovative small-scale flexi-arch bridge where they are used for real-time strain measurements during the critical installation stage (lifting) and loading. These sensors have demonstrated enhanced resilience when embedded in or surface-mounted on such concrete structures, providing accurate and consistent strain measurements not only during installation but subsequently during use. This offers an inexpensive and highly effective monitoring system tailored for the new, rapid method of the installation of small-scale bridges for a variety of civil engineering applications.