High-power operation of uncoated strain-compensated quantum cascade lasers at 4.8 mu m

High-power operation of uncoated 22-mu m-wide quantum cascade lasers (QCLs) emitting at lambda approximate to 4.8 mu m is reported. The emitting region of the QCL structure consists of a 30-period strain-compensated In0.68Ga0.32As/In0.37Al0.63As superlattice. For a 4-mm-long laser in pulsed mode, a peak output power is achieved in excess of 2240mW per facet at 81K with a threshold current density of 0.64kA/cm(2). The effects of varying the cavity lengths from 1 to 4mm on the performances of the QCLs are analysed in detail and the low waveguide loss of only about 1.4 cm(-1) is extracted.

High temperature operation of 5.5 mu m strain-compensated quantum cascaded lasers

We develop 5.5-mu m InxGa1-xAs/InyAl1-yAs strain-compensated quantum cascade lasers with InP and InGaAs cladding layers by using solid-source molecular-beam epitaxy. Pulse operation has been achieved up to 323 K (50 degrees C) for uncoated 20-mu m-wide and 2-mm-long devices. These devices display an output power of 36 mW with a duty cycle of 1% at room temperature. In continuous wave operation a record peak optical power of 10 mW per facet has been measured at 83 K.

8 mu m strain-compensated quantum cascade laser operating at room temperature

We report on the material growth and device performance characterization of a strain-compensated In0.54Ga0.46As/In0.51Al0.49As quantum cascade laser at lambda similar to 8 mu m. For 2 mu s pulse at a 5 kHz repetition rate, laser action is achieved up to room temperature (30 degrees C). The tuning coefficient d lambda/dT is 1.37 nm K-1 between 83 K and 163 K and 0.60 nm K-1 in the range from 183 K to 303 K. The peak output power is reported to be similar to 11.3 mW per facet at 293 K and the corresponding threshold current density is 5.69 kA cm(-2).

Low threshold current density operation of strain-compensated quantum cascade laser

We report the low threshold current density operation of strain-compensated In0.64Ga0.36As/In0.38Al0.62As quantum cascade lasers emitting near 4.94 mu m. By employing an enlarged strain-compensated structure and optimizing the injector doping density, a rather low threshold current density of 0.57 kA/cm(2) at 80K is achieved for an uncoated 20-mu m-wide and 2.5-mm-long laser.

Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition

The structural and optical properties of GaAsSb/GaAs quantum wells (QWs) and strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP QWs grown on a GaAs substrate by molecular beam epitaxy are investigated using high-resolution x-ray diffraction and photoluminescence (PL) measurements. We demonstrated that the insertion of tensile GaAsP layers into the active region of GaAsSb/GaAs QWs effectively improves the structural and optical quality. Even the Sb composition is as high as 0.39. The PL spectra at 11 K and room temperature indicate that the PL peak of strain-compensated QWs has a narrower linewidth and higher intensity in comparison to the sample without strain compensation. The results of PL peak blueshift with increasing excitation show the strain-compensated GaAsSb/GaAs interface characteristic of type-I band alignment. (C) 2003 American Institute of Physics.

The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well

Photoluminescence (PL) properties of GaInNAs/GaAs quantum wells (QWs) with strain-compensated GaNAs layers grown by molecular beam epitaxy are investigated. The temperature-dependent PL spectra of GaInNAs/GaAs QW with and without GaNAs layers are compared and carefully studied. It is shown that the introduction of GaNAs layers between well and barrier can effectively extend the emission wavelength, mainly due to the reduction of the barrier potential. The PL peak position up to 1.41 mum is observed at the room temperature. After adding the GaNAs layers into QW structures, there is no essential deterioration of luminescence efficiency. N-induced localization states are also not remarkably influenced. It implies that with optimized growth condition, high-quality GaInNAs/GaAs QWs with strain-compensated GaNAs layers can be achieved. (C) 2003 Elsevier Science B.V. All rights reserved.

Strain-compensated quantum cascade lasers operating at room temperature

Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP substrate using molecular beam epitaxy is reported. The epitaxial quality is demonstrated by the abundant narrow satellite peaks of double-crystal X-ray diffraction and cross-section transmission electron microscopy of the QC laser wafer. Laser action in quasi-continuous wave operation is achieved at lambda approximate to 3.6-3.7 mum at room temperature (34 degreesC) for 20 mum x 1.6 mm devices, with peak output powers of similar to 10.6mW and threshold current density of 2.7kA/cm(2) at this temperature. (C) 2000 Published by Elsevier Science B.V.

High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers

We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/In(y)A((1-y))As grown on InP substrates using molecular beam epitaxy. X-ray diffraction and cross section transmission electron microscopy have been used to ascertain the quality of the QC laser materials. Quasi-continuous wave lasing at lambda approximate to 3.54-3.7 mum at room temperature was achieved. For a laser with 1.6 mm cavity length and 20 mum ridge-waveguide width,quasi-continuous wave lasing at 34 degreesC persists for more than 30 min, with a maximum power of 11.4 mW and threshold current density of 1.2 kA cm(-2), both record values for QC lasers of comparable wavelength.

Room temperature (34 degrees C) operation of strain-compensated quantum cascade lasers

A short wavelength (lambda similar or equal to 3.5 mu m) strain-compensated InxGa(1-x)As/InyAl(1-y)As quantum cascade laser is reported. Quasi-continuous wave operation of this device at 34 degrees C with an output power of 11.4mW persisted for more than 30 minutes without obvious degradation. A very low threshold current density of 1.2KA/cm(2) at this temperature was observed.

Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer

An InAlAs native oxide is used to replace the p-n reverse-biased junction in a conventional buried heterostructure InP-based laser. This technique reduces the number of regrowth steps and eliminates leakage current under high-temperature operation. The InAlAs native oxide buried heterostructure (NOBH) laser with strain-compensated InGaAsP/InP multiple quantum well active layers has a threshold current of 5.6 mA, a slope efficiency of 0.23 mW/mA, and a linear power up to 22.5 mW with a HR-coated facet. It exhibits single transverse mode with lasing wavelength at 1.532 mu m. A characteristic temperature (T-0) of 50 K is obtained from the NOBH laser with a nonoptimized oxide layer width. (C) 1998 American Institute of Physics. [S0003-6951(98)01352-7].

Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature

We present a strain-compensated InP-based InGaAs/InAlAs photovoltaic quantum cascade detector grown by solid source molecular beam epitaxy. The detector is based on a vertical intersubband transition and electron transfer on a cascade of quantum levels which is designed to provide longitudinal optical phonon extraction stairs. By careful structure design and growth, the whole epilayer has a residual strain toward InP substrate of only -2.8 x 10(-4). A clear narrow band detection spectrum centered at 4.5 mu m has been observed above room temperature for a device with 200 x 200 mu m(2) square mesa.

Room Temperature Operation of Strain-Compensated 5.5μm Quantum Cascade Lasers

Room temperature operation is an important criterion for high performance of quantum cascade lasers. A strain-compensated quantum cascade laser（λ≈5.5μm） with optimized waveguide structure lasing at room temperature is reported. Accurate control of layer thickness and strain-compensated material composition is demonstrated using X-ray diffraction. An output power of at least 45mW per facet is realized for a 20μm-wide and 2mm-long laser at room temperature.

10-Gbits/s all-optical 3R regeneration and format conversion using a gain-switched DFB laser

A strain-compensated multiple quantum well device is used as a DFB laser, this has been optimized for low jitter gain switched operation at 10 GHz. The signal is transmitted down 80 km of standard fiber then amplified, filtered and polarization controlled before being injected into a DFB laser. The purpose of this regeneration process is to gain switch the DFB with the extracted clock signal in order to retime the converted signal. This process also simultaneously converts the input NRZ format to an output RZ data to format and results in a signal whose optical power and extinction ratio are considerably improved by the regeneration process.

Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells

The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure. (C) 2004 Elsevier B.V. All rights reserved.

Artificial nanograting woven by self-assembled nanowires

We report on a new simple route to realize a high resolution nanograting. By adopting an InAlGaAs matrix and strain-compensated technique, we have proved that a uniform self-assembled InAs nanowire array can be fabricated by molecular beam epitaxy (MBE). A nanograting woven by self-assembled semiconductor nanowires shows a conspicuous diffraction feature. The good agreement between the theoretical and experimental values of diffraction peak positions indicates that a uniform nanowire array is a promising nanograting. This simple one-step MBE growth method will open exciting opportunities for the field of clever optics design.