On the stability of the Higher Manganese Silicides

We investigated in this work the stability of the Higher Manganese Silicides (HMS). Several alloys in the composition range 62-66 at.% Si were prepared from their constitutive elements by arc-melting. The prepared alloys were then analysed by in situ X-ray diffraction measurements and Electron Probe Micro-Analyser (EPMA). The whole results allow us to suggest that whatever the composition is, only Mn(27)Si(47) is stable for the temperatures 500 degrees C and 800 degrees C. At higher temperatures, the studied samples undergo two phase transformations which consecutively lead to the formation of Mn(15)Si(26) and Mn(11)Si(19). Mn(4)Si(7) was never evidenced in the present work. It is shown for the first time in this work that Mn(27)Si(47) is the only HMS stable phase at room temperature. (C) 2011 Elsevier B.V. All rights reserved.

Evaluation of Ti(3)Si Phase Stability from Heat-Treated, Rapidly Solidified Ti-Si Alloys

Ti-base alloys containing significant amounts of silicon have been considered for high temperature structural applications. Thus, information concerning phase stability on the Ti-Si system is fundamental and there are not many investigations covering the phase stability of the Ti(3)Si phase, specially its dependence on oxygen/nitrogen contamination. In this work the stability of this phase has been evaluated through heat-treatment of rapidly solidified Ti-rich Ti-Si alloys at 700 A degrees C and 1000 A degrees C. The rapidly solidified splats presented nanometric scale microstructures which facilitated the attainment of equilibrium conditions. The destabilization of Ti(3)Si due to oxygen/nitrogen contamination has been noted.

Microstructural Evidence of beta Co(2)Si- phase Stability in the Co-Si System

The aim of this work was to verify the stability of the beta Co(2)Si phase in the Co-Si system. The samples were produced via arc-melting and characterized through Scanning Electron Microscopy (SEM) and Differential Thermal Analysis (DTA). The results have confirmed the stability of the beta Co(2)Si phase, however, a modification of the shape of beta CoSi phase field is proposed in order to fully explain the results.

Microstructural characterization of as-cast Cr-Si alloys

This work presents results of microstructural characterization of as-cast Cr-Si alloys. The alloys were prepared by arc melting pure Cr (min. 99.996%) and Si (min. 99.998%) powder mixtures under argon atmosphere in a water-cooled copper crucible with nonconsumable tungsten electrode and titanium getter. The phases were identified by scanning electron microscopy (SEM), using the back-scattered electron (BSE) image mode and X-ray diffraction (XRD). The results confirm the currently accepted Cr-Si phase diagram in terms of the invariant reactions and solid phases present in this system. Small corrections are proposed for the compositions of the liquid phase in the following reactions: (i) L double left right arrow Cr-ss+Cr3Si, from 15 to 16 at.% Si; (ii) L+alpha Cr5Si3 double left right arrow CrSi, from 51 at.% Si to slightly above 53 at.% Si; (iii) L double left right arrow CrSi+CrSi2, from 56 to slightly above 57 at.% Si; (iv) L double left right arrow CrSi2+Si, from 82 to slightly above 85 at.% Si. (c) 2006 Elsevier Inc. All rights reserved.

Superconductivity in Mo(5)SiB(2)

In the Mo-Si binary system. Mo(5)Si(3) crystallizes in the W(5)Si(3) (T(1) phase) structure type. However, when boron replaces silicon in this compound, a structural transition occurs from the W(5)Si(3) prototype structure to the Cr(5)B(3) prototype structure (T(2) phase) at the composition Mo(5)SiB(2). Mo(5)SiB(2) has received much attention in the literature as a candidate for structural application in high-temperature turbines, but its electronic and magnetic behavior has not been explored. In this work, we show that Mo(5)SiB(2) is a bulk superconducting material with critical temperature close to 5.8 K. The specific-heat, resistivity and magnetization measurements reveal that this material is a conventional type II BCS superconductor. (C) 2011 Elsevier Ltd. All rights reserved.

Magnetization studies of binary and ternary Co-rich phases of the Co-Si-B system

CoB, CO(2)B, CoSi, Co(2)Si and CO(5)Si(2)B phases can be formed during heat-treatment of amorphous co-Si-B soft magnetic materials. Thus, it is important to determine their magnetic behavior as a function of applied field and temperature. In this study, polycrystalline single-phase samples of the above phases were produced via arc melting and heat-treatment under argon. The single-phase nature of the samples was confirmed via X-ray diffraction experiments. AC and DC magnetization measurements showed that Co(2)Si and CO(5)Si(2)B phases are paramagnetic. Minor amounts of either Co(2)Si or CoSi(2) in the CoSi-phase sample suggested a paramagnetic behavior of the CoSi-phase, however, it should be diamagnetic as shown in the literature. The diamagnetic behavior of the CoB phase was also confirmed. The paramagnetic behavior of CO(5)Si(2)B is for the first time reported. The magnetization results of the phase CO(2)B have a ferromagnetic signature already verified on previous NMR studies. A detailed set of magnetization measurements of this phase showed a change of the easy magnetization axis starting at 70K, with a temperature interval of about 13K at a very small field of 1 mT. As the strength of the field is increased the temperature interval is enlarged. The strength of field at which the magnetization saturates increases almost linearly as the temperature is increased above 70K. The room temperature total magnetostriction of the CO(2)B phase was determined to be 8 ppm at a field of 1T. (C) 2010 Elsevier B.V. All rights reserved.

Thermal expansion of the V(5)Si(3) and T(2) phases of the V-Si-B system investigated by high-temperature X-ray diffraction

The thermal expansion anisotropy of the V(5)Si(3) and T(2)-phase of the V-Si-B system were determined by high-temperature X-ray diffraction from 298 to 1273 K. Alloys with nominal compositions V(62.5)Si(37.5) (V5Si3 phase) and V(63)Si(12)B(25) (T(2)-phase) were prepared from high-purity materials through arc-melting followed by heat-treatment at 1873 K by 24 h, under argon atmosphere. The V(5)Si(3) phase exhibits thermal expansion anisotropy equals to 1.3, with thermal expansion coefficients along the a and c-axis equal to 9.3 x 10(-6) K(-1) and 11.7 x 10(-6) K(-1), respectively. Similarly, the thermal expansion anisotropy value of the T(2)-phase is 0.9 with thermal expansion coefficients equal to 8.8 x 10(-6) K(-1) and 8.3 x 10(-6) K(-1) along the, a and c-axis respectively. Compared to other isostructural silicides of the 5:3 type and the Ti(5)Si(3) phase, the V(5)Si(3) phase presents lower thermal expansion anisotropy. The T(2)-phase present in the V-Si-B system exhibits low thermal expansion anisotropy, as the T(2)-phase of the Mo-Si-B, Nb-Si-B and W-Si-B systems. (C) 2009 Elsevier Ltd. All rights reserved.

Degradation of thin tungsten filaments at high temperature in HWCVD

The degradation of the filaments is usually studied by checking the silicidation or carbonization status of the refractory metal used as catalysts, and their effects on the structural stability of the filaments. In this paper, it will be shown that the catalytic stability of a filament heated at high temperature is much shorter than its structural lifetime. The electrical resistance of a thin tungsten filament and the deposition rate of the deposited thin film have been monitored during the filament aging. It has been found that the deposition rate drops drastically once the quantity of dissolved silicon in the tungsten reaches the solubility limit and the silicides start precipitating. This manuscript concludes that the catalytic stability is only guaranteed for a short time and that for sufficiently thick filaments it does not depend on the filament radius.

Étude de phase des systèmes Ni/Si-endommagé et Ni/a-Si, par XRD résolue en temps et nanocalorimétrie

Mémoire numérisé par la Division de la gestion de documents et des archives de l'Université de Montréal

Effets des recuits ultra-rapides (10^5 K/s) sur la formation des siliciures métalliques en phase solide

La synthèse de siliciures métalliques sous la forme de films ultra-minces demeure un enjeu majeur en technologie CMOS. Le contrôle du budget thermique, afin de limiter la diffusion des dopants, est essentiel. Des techniques de recuit ultra-rapide sont alors couramment utilisées. Dans ce contexte, la technique de nanocalorimétrie est employée afin d'étudier, in situ, la formation en phase solide des siliciures de Ni à des taux de chauffage aussi élevés que 10^5 K/s. Des films de Ni, compris entre 9.3 et 0.3 nm sont déposés sur des calorimètres avec un substrat de a-Si ou de Si(100). Des mesures de diffraction de rayons X, balayées en température à 3 K/s, permettent de comparer les séquences de phase obtenues à bas taux de chauffage sur des échantillons de contrôle et à ultra-haut taux de chauffage sur les calorimètres. En premier lieu, il est apparu que l'emploi de calorimètres de type c-NC, munis d'une couche de 340 nm de Si(100), présente un défi majeur : un signal endothermique anormal vient fausser la mesure à haute température. Des micro-défauts au sein de la membrane de SiNx créent des courts-circuits entre la bande chauffante de Pt du calorimètre et l'échantillon métallique. Ce phénomène diminue avec l'épaisseur de l'échantillon et n'a pas d'effet en dessous de 400 °C tant que les porteurs de charge intrinsèques au Si ne sont pas activés. Il est possible de corriger la mesure de taux de chaleur en fonction de la température avec une incertitude de 12 °C. En ce qui a trait à la formation des siliciures de Ni à ultra-haut taux de chauffage, l'étude montre que la séquence de phase est modifiée. Les phases riches en m étal, Ni2Si et théta, ne sont pas détectées sur Si(100) et la cinétique de formation favorise une amorphisation en phase solide en début de réaction. Les enthalpies de formation pour les couches de Ni inférieures à 10 nm sont globalement plus élevées que dans le cas volumique, jusqu' à 66 %. De plus, les mesures calorimétriques montrent clairement un signal endothermique à haute température, témoignant de la compétition que se livrent la réaction de phase et l'agglomération de la couche. Pour les échantillons recuits a 3 K/s sur Si(100), une épaisseur critique telle que décrite par Zhang et Luo, et proche de 4 nm de Ni, est supposée. Un modèle est proposé, basé sur la difficulté de diffusion des composants entre des grains de plus en plus petits, afin d'expliquer la stabilité accrue des couches de plus en plus fines. Cette stabilité est également observée par nanocalorimétrie à travers le signal endothermique. Ce dernier se décale vers les hautes températures quand l'épaisseur du film diminue. En outre, une 2e épaisseur critique, d'environ 1 nm de Ni, est remarquée. En dessous, une seule phase semble se former au-dessus de 400 °C, supposément du NiSi2.

Effects of Platinum on NiPtSiGe/n-SiGe and NiPtSi/n-Si Schottky Contacts

Solid phase reaction of NiPt/Si and NiPt/SiGe is one of the key issues for silicide (germanosilicide) technology. Especially, the NiPtSiGe, in which four elements are involved, is a very complex system. As a result, a detailed study is necessary for the interfacial reaction between NiPt alloy film and SiGe substrate. Besides using traditional material characterization techniques, characterization of Schottky diode is a good measure to detect the interface imperfections or defects, which are not easy to be found on large area blanket samples. The I-V characteristics of 10nm Ni(Pt=0, 5, 10 at.%) germanosilicides/n-Si₀/₇Ge₀.₃ and silicides/n-Si contact annealed at 400 and 500°C were studied. For Schottky contact on n-Si, with the addition of Pt in the Ni(Pt) alloy, the Schottky barrier height (SBH) increases greatly. With the inclusion of a 10% Pt, SBH increases ~0.13 eV. However, for the Schottky contacts on SiGe, with the addition of 10% Pt, the increase of SBH is only ~0.04eV. This is explained by pinning of the Fermi level. The forward I-V characteristics of 10nm Ni(Pt=0, 5, 10 at.%)SiGe/SiGe contacts annealed at 400°C were investigated in the temperature range from 93 to 300K. At higher temperature (>253K) and larger bias at low temperature (<253K), the I-V curves can be well explained by a thermionic emission model. At lower temperature, excess currents at lower forward bias region occur, which can be explained by recombination/generation or patches due to inhomogenity of SBH with pinch-off model or a combination of the above mechanisms.

Formation of an extended CoSi2 thin nanohexagons array coherently buried in silicon single crystal

A Co-doped silica film was deposited on the surface of a Si(100) wafer and isothermally annealed at 750 degrees C to form spherical Co nanoparticles embedded in the silica film and a few atomic layer thick CoSi2 nanoplatelets within the wafer. The structure, morphology, and spatial orientation of the nanoplatelets were characterized. The experimental results indicate that the nanoplatelets exhibit hexagonal shape and a uniform thickness. The CoSi2 nanostructures lattice is coherent with the Si lattice, and each of them is parallel to one of the four planes belonging to the {111} crystallographic form of the host lattice. (C) 2012 American Institute of Physics. [doi:10.1063/1.3683493]