A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor

This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially grown by molecular beam epitaxy ( MBE) in turn on a GaAs substrate. An Al0.24Ga0.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-mu m gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property.

Toward Self-Organising Service Communities

This paper discusses a framework in which catalog service communities are built, linked for interaction, and constantly monitored and adapted over time. A catalog service community (represented as a peer node in a peer-to-peer network) in our system can be viewed as domain specific data integration mediators representing the domain knowledge and the registry information. The query routing among communities is performed to identify a set of data sources that are relevant to answering a given query. The system monitors the interactions between the communities to discover patterns that may lead to restructuring of the network (e.g., irrelevant peers removed, new relationships created, etc.).