Direct measurement of surface forces between sapphire crystals in aqueous solutions

Measurements are presented of the electrical double layer and van der Waals forces between the (0001) surfaces of two single-crystal sapphire platelets immersed in an aqueous solution of NaCl at pH values from 6.7 to 11. The results fit the standard Deryaguin-Landau-Verwey-Overbeek (DLVO) theory, with a Hamaker constant of 6.7 × 10−20 J. These are the first measurements made using the Israelachvili surface forces apparatus without mica as a substrate material, and they demonstrate the possibility of using this technique to explore the surface chemistry of a wider range of materials.

Growth of composite sapphire/Ti : sapphire by the hydrothermal method

Composite sapphire/Ti:sapphire crystals for high-power laser application were grown by the hydrothermal method. The results of the X-ray rocking curve analysis indicate high crystalline quality of the surface Al2O3 material. The strong bonding between the overgrown Al2O3 and seed Ti:Al2O3 crystals is indispensable for withstanding high thermal stresses produced by intense optical pumping. The optical loss at the boundary of the composite crystal is considerably low, indicating the lack of scattering centers. (c) 2005 Elsevier B.V. All rights reserved.

Phi 140 mm sapphire crystal growth by temperature gradient techniques and its color centers

Sapphire crystals, 140 mm in diameter and 90 turn in height, have been grown by temperature gradient techniques (TGT). The growth direction of the boule was fixed by means of Lane X-ray diffraction. A prominent 204 nm absorption band in TGT-Al2O3. which does not appear in single crystals grown by Czochralski method has been studied. Analysis further substantiates the F-center model of this band. Two relatively weaker bands absorbing at 232 nm and 254 nm were ascribed to F+ centers. F-type centers concentration was determined using Smakula's equation. (c) 2005 Elsevier B.V. All rights reserved.

钛宝石强激光负载的有机硅复合凝胶增透膜研究

以硅酸四乙酯(TEOS)和甲基三乙氧基硅烷(MTEOS)为前驱材料，用溶胶-凝胶(sol-gel)方法在钛宝石表面制备得到均匀性良好且具有高激光损伤阈值的有机硅复合凝胶增透膜。膜层在钛宝石激光器输出波段(750～850nm)的增透效果显著，其平均透过率超过98．6％；激光破坏阈值为2．2J／cm^2(800nm，300ps)；膜层表面均匀性达到激光波面的要求，在皮秒、飞秒超短脉冲高功率激光领域具有应用价值。溶胶的性能测试结果表明，溶胶粘度和成膜折射率均随溶液中CH3SiO1.5溶胶体含量的增加而增大，而膜

钛宝石中子辐照色心的研究

研究了中子辐照下钛宝石单晶体缺陷的形成及光学性能的变化。对温度梯度法(TGT)生长的钛宝石晶体进行中子辐照。中子能量为1．5MeV，剂量为4．32×10^18 neutrons／cm^2。辐照后194nm吸收峰强度增加,268nm吸收峰强度则降低。荧光谱检测中发现辐照使得420nm荧光峰强度明显降低，荧光峰位置也蓝移至414nm处。分析表明辐照使得钛宝石晶体内形成F^+缺陷，同时Ti^4+离子则转化成Ti^3+离子。辐照后的钛宝石在247C处有热释光TL出现，通过初始上升法计算出其陷阱深度为0．63eV。

蓝宝石中子辐照色心的研究

研究了中子辐照对蓝宝石(α-Al2O3)单晶体缺陷形成及光学性能的影响，对采用提拉法与温度梯度法生长的蓝宝石晶体进行中子辐照，通过对比辐照前后的吸收及荧光光谱变化，发现辐照使得蓝宝石晶体内形成F、F^+和F2^+色心缺陷，但不同方法生长的晶体样品中色心浓度差异明显。其中提拉法样品的F心浓度要高于温度梯度法样品，而温度梯度法样品中F^+色心浓度要高于提拉法样品。分析表明，这与两种方法生长的晶体中杂质含量差异有关。通过研究辐照后晶体的热致发光谱发现提拉法与温度梯度法生长的蓝宝石晶体分别在145℃与150℃有明

水热法生长复合钛宝石激光晶体

水热法生长了复合钛宝石(Al2O3／Ti：Al2O3)激光晶体．对外层Al2O3X射线ω扫描表明其晶体质量很高．外层生长的Al2O3和内部的钛宝石激光棒结合牢固、紧密，因而能适应高强度泵浦所带来的激光介质内部的热应力．复合激光晶体界面层带来的光损耗很小．就我们所知，这是首次用水热法生长复合激光晶体．

温梯法生长大尺寸蓝宝石晶体的脱碳去色退火研究

温度梯度法（temperature gradient technique，TGT）生长的Al2O3晶体因石墨发热体在高温时的挥发和原料中过渡性金属离子的存在，在不同部位呈现不同颜色，一般上部为浅红色，尾部为浅黄绿色．将TGT法生长的Al2O3晶体（Ф110×80mm^3）依次经过高温氧化气氛、高温还原气氛脱碳、去色退火实验，即“两步法”退火实验，晶体变成无色、透明．经测试，Al2O3晶体的完整性、光学透过率和光学均匀性均有显著提高.

Internal characteristics, chemical compounds and spectroscopy of sapphire as single crystals

In this study more than 450 natural sapphire samples (most of basaltic type) collected from 19 different areas were examined. They are from Dak Nong, Dak Lak, Quy Chau, two unknown sources from the north (Vietnam); Bo Ploi, Khao Ploi Waen (Thailand); Ban Huay Sai (Laos); Australia; Shandong (China); Andapa, Antsirabe, Nosibe (Madagascar); Ballapana (Sri Lanka); Brazil; Russia; Colombia; Tansania and Malawi. rnThe samples were studied on internal characteristics, chemical compositions, Raman-, luminescence-, Fourier transform infrared (FTIR)-, and ultraviolet-visible-near infrared (UV-Vis-NIR)- spectroscopy. The internal features of these sapphire samples were observed and identified by gemological microscope, con focal micro Raman and FTIR spectroscopy. The major and minor elements of the samples were determined by electron probe microanalysis (EPMA) and the trace elements by laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS). rnThe structural spectra of sapphire were investigated by con focal Raman spectroscopy. The FTIR spectroscopy was used to study the vibration modes of OH-groups and also to determine hydrous mineral inclusions in sapphire. The UV-Vis-NIR absorption spectroscopy was used to analyze the cause of sapphire color. rnNatural sapphires contain many types of mineral inclusions. Typically, they are iron-containing inclusions like goethite, ilmenite, hematite, magnetite or silicate minerals commonly feldspar, and often observed in sapphires from Asia countries, like Dak Nong, Dak Lak in the south of Vietnam, Ban Huay Sai (Laos), Khao Ploi Waen and Bo Ploi (Thailand) or Shandong (China). Meanwhile, CO2-diaspore inclusions are normally found in sapphires from Tansania, Colombia, or the north of Vietnam like Quy Chau. rnIron is the most dominant element in sapphire, up to 1.95 wt.% Fe2O3 measured by EPMA and it affects spectral characteristics of sapphire.rnThe Raman spectra of sapphire contain seven peaks (2A1g + 5Eg). Two peaks at about 418.3 cm-1 and 577.7 cm-1 are influenced by high iron content. These two peaks shift towards smaller wavenumbers corresponding to increasing iron content. This shift is showed by two equations y(418.3)=418.29-0.53x andy(577.7)=577.96-0.75x, in which y is peak position (cm-1) and x is Fe2O3 content (wt.%). By exploiting two these equations one can estimate the Fe2O3 contents of sapphire or corundum by identifying the respective Raman peak positions. Determining the Fe2O3 content in sapphire can help to distinguish sapphires from different origins, e.g. magmatic and metamorphic sapphire. rnThe luminescence of sapphire is characterized by two R-lines: R1 at about 694 nm and R2 at about 692 nm. This characteristic is also influenced by high iron content. The peak positions of two R-lines shift towards to smaller wavelengths corresponding to increasing of iron content. This correlation is showed by two equations y(R_2 )=692.86-0.049x and y(R_1 )=694.29-0.047x, in which y is peak position (nm) of respective R-lines and x is Fe2O3 content (wt.%). Two these equations can be applied to estimate the Fe2O3 content of sapphire and help to separate sapphires from different origins. The luminescence is also applied for determination of the remnant pressure or stress around inclusions in Cr3+-containing corundum by calibrating a 0-pressure position in experimental techniques.rnThe infrared spectra show the presence of vibrations originating from OH-groups and hydrous mineral inclusions in the range of 2500-4000 cm-1. Iron has also an effect upon the main and strongest peak at about 3310 cm-1. The 3310 cm-1 peak is shifted to higher wavenumber when iron content increases. This relationship is expressed by the equation y(3310)=0.92x+3309.17, in which y is peak position of the 3310 cm-1 and x is Fe2O3 content (wt.%). Similar to the obtained results in Raman and luminescence spectra, this expression can be used to estimate the Fe2O3 content and separate sapphires from different origins. rnThe UV-Vis-NIR absorption spectra point out the strong and sharp peaks at about 377, 387, and 450 nm related to dispersed Fe3+, a broad band around 557 and 600 nm related to intervalence charge transfer (IVCT) Fe2+/Ti4+, and a broader band around 863 nm related to IVCT of Fe2+/Fe3+. rnGenerally, sapphires from different localities were completely investigated on internal features, chemical compounds, and solid spectral characteristics. The results in each part contribute for identifying the iron content and separate sapphires from different localities order origins. rn

Simultaneous three-photon-excited violet upconversion luminescence of Ce3+: Lu2Si2O7 single crystals by femtosecond laser irradiation

We found that Ce3+:Lu2Si2O7 single crystals could be excited at 800 nm by using a femtosecond Ti:sapphire laser. The emission spectra of Ce3+:Lu2Si2O7 crystals were the same for one-photon excitation at 267 nm as for excitation at 800 nm. The emission intensity of Ce3+: Lu2Si2O7 crystals was found to depend on the cube of the laser power at 800 nm, consistent with simultaneous absorption of three 800 nm photons. The measured value of the three-photon absorption cross section is sigma'(3) = 2.44 x 10(-77) cm(6) s(2). (c) 2006 Optical Society of America.

Ti:sapphire laser pumped high average power laser crystal Nd:GGG with high efficiency output

High-quality neodymium doped GGG laser crystals have been grown by Czochralski (Cz) method. Results of Nd:GGG thin chip laser operating at 1.064 μm pumped by Ti:sapphire laser operating at 808 nm were reported. The slop efficiency was as high as 20%.

Ab initio calculations for the neutral and charged O vacancy in sapphire

The energetics, lattice relaxation, and the defect-induced states of st single O vacancy in alpha-Al2O3 are studied by means of supercell total-energy calculations using a first-principles method based on density-functional theory. The supercell model with 120 atoms in a hexagonal lattice is sufficiently large to give realistic results for an isolated single vacancy (square). Self-consistent calculations are performed for each assumed configuration of lattice relaxation involving the nearest-neighbor Al atoms and the next-nearest-neighbor O atoms of the vacancy site. Total-energy data thus accumulated are used to construct an energy hypersurface. A theoretical zero-temperature vacancy formation energy of 5.83 eV is obtained. Our results show a large relaxation of Al (O) atoms away from the vacancy site by about 16% (8%) of the original Al-square (O-square) distances. The relaxation of the neighboring Al atoms has a much weaker energy dependence than the O atoms. The O vacancy introduces a deep and doubly occupied defect level, or an F center in the gap, and three unoccupied defect levels near the conduction band edge, the positions of the latter are sensitive to the degree of relaxation. The defect state wave functions are found to be not so localized, but extend up to the boundary of the supercell. Defect-induced levels are also found in the valence-band region below the O 2s and the O 2p bands. Also investigated is the case of a singly occupied defect level (an F+ center). This is done by reducing both the total number of electrons in the supercell and the background positive charge by one electron in the self-consistent electronic structure calculations. The optical transitions between the occupied and excited states of the: F and F+ centers are also investigated and found to be anisotropic in agreement with optical data.

Enhanced photoluminescence of Ar+ implanted sapphire before and after annealing

In this paper, we studied the changes in the photoluminescence spectra of the Ar+ ion implanted monocrystalline sapphire annealed at different atmospheres and different temperatures. Single crystals of sapphire (Al2O3) with the (1 0 (1) over bar 0) (m-samples) orientation were implanted at 623 K with 110 keV Ar+ ions to a fluence of 9.5 x 10(16) ions/cm(2). Photoluminescence measurement of the as-implanted sample shows a new emission band at 506 nm, which is attributed to the production of interstitial Al atoms. The intensity of emission band at 506 nm first increased then decreased with increase in annealing temperature. For the same annealing temperature, the intensity of PL peak at 506 nm of the sample annealed in air was higher than the sample annealed in vacuum. The experimental results show that the intensity of the PL peak at 506 nm of Ar-implanted sapphire can be enhanced by subsequent annealing with an enhancement of nearly 20 times. The influence of thermal annealing of the Ar-implanted samples on the new 506 nm emission band was discussed. (C) 2009 Elsevier B.V. All rights reserved.

Strong second harmonic generation in SiC, ZnO, GaN two-dimensional hexagonal crystals from first-principles many-body calculations

The second harmonic generation (SHG) intensity spectrum of SiC, ZnO, GaN two-dimensional hexagonal crystals is calculated by using a real-time first-principles approach based on Green's function theory [Attaccalite et al., Phys. Rev. B: Condens. Matter Mater. Phys. 2013 88, 235113]. This approach allows one to go beyond the independent particle description used in standard first-principles nonlinear optics calculations by including quasiparticle corrections (by means of the GW approximation), crystal local field effects and excitonic effects. Our results show that the SHG spectra obtained using the latter approach differ significantly from their independent particle counterparts. In particular they show strong excitonic resonances at which the SHG intensity is about two times stronger than within the independent particle approximation. All the systems studied (whose stabilities have been predicted theoretically) are transparent and at the same time exhibit a remarkable SHG intensity in the range of frequencies at which Ti:sapphire and Nd:YAG lasers operate; thus they can be of interest for nanoscale nonlinear frequency conversion devices. Specifically the SHG intensity at 800 nm (1.55 eV) ranges from about 40-80 pm V(-1) in ZnO and GaN to 0.6 nm V(-1) in SiC. The latter value in particular is 1 order of magnitude larger than values in standard nonlinear crystals.

Nonlinear refractive index of RECOB (RE = Gd and La) crystals

The Z-scan technique is employed to obtain the nonlinear refractive index (n (2)) of the Ca(4)REO(BO(3))(3) (RECOB, where RE = Gd and La) single crystals using 30 fs laser pulses centered at 780 nm for the two orthogonal orientations determined by the optical axes (X and Z) relative to the direction of propagation of the laser beam (k//Y// crystallographic b-axis). The large values of n (2) indicate that both GdCOB and LaCOB are potential hosts for Yb:RECOB lasers operating in the Kerr-lens mode locking (KLM) regime.