Outstanding dielectric constant and piezoelectric coefficient in electrospun nanofiber mats of PVDF containing silver decorated multiwall carbon nanotubes: assessing through piezoresponse force microscopy

In order to enhance the piezoelectric b-phase, PVDF was electrospun from DMF solution. The enhanced b-phase was discerned by comparing the electrospun fibers against the melt mixed samples. While both the processes resulted in phase transformation of a-to electroactive b-polymorph in PVDF, the fraction of b-phase was strongly dependent on the adopted process. Two different nanoscopic particles: carboxyl functionalized multiwall carbon nanotubes (CNTs) and silver (Ag) decorated CNTs were used to further enhance the piezoelectric coefficient in the electrospun fibers. Fourier transform infrared spectroscopy (FTIR) and wide-angle X-ray diffraction (XRD) supports the development of piezoelectric b-phase in PVDF. It was concluded that electrospinning was the best technique for inducing the b-polymorph in PVDF. This was attributed to the high voltage electrostatic field that generates extensional forces on the polymer chains that aligns the dipoles in one direction. The ferroelectric and piezoelectric measurement on electrospun fibers were studied using piezo-response force microscope (PFM). The Ag-CNTs filled PVDF electrospun fibers showed the highest piezoelectric coefficient (d(33) = 54 pm V-1) in contrast to PVDF/CNT fibers (35 pm V-1) and neat PVDF (30 pm V-1). This study demonstrates that the piezoelectric coefficient can be enhanced significantly by electrospinning PVDF containing Ag decorated nanoparticles.

Resolution theory, and static and frequency-dependent cross-talk in piezoresponse force microscopy

Probing the functionality of materials locally by means of scanning probe microscopy (SPM) requires a reliable framework for identifying the target signal and separating it from the effects of surface morphology and instrument non-idealities, e.g. instrumental and topographical cross-talk. Here we develop a linear resolution theory framework in order to describe the cross-talk effects, and apply it for elucidation of frequency-dependent cross-talk mechanisms in piezoresponse force microscopy. The use of a band excitation method allows electromechanical/electrical and mechanical/topographic signals to be unambiguously separated. The applicability of a functional fit approach and multivariate statistical analysis methods for identification of data in band excitation SPM is explored.

Mapping piezoelectric nonlinearity in the Rayleigh regime using band excitation piezoresponse force microscopy

Band excitation piezoresponse force microscopy enables local investigation of the nonlinear piezoelectric behavior of ferroelectric thin films. However, the presence of additional nonlinearity associated with the dynamic resonant response of the tip-surface junction can complicate the study of a material's nonlinearity. Here, the relative importance of the two nonlinearity sources was examined as a function of the excitation function. It was found that in order to minimize the effects of nonlinear tip-surface interactions but achieve good signal to noise level, an optimal excitation function must be used. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3593138]

Real-space mapping of dynamic phenomena during hysteresis loop measurements: Dynamic switching spectroscopy piezoresponse force microscopy

Dynamic switching spectroscopy piezoresponse force microscopy is developed to separate thermodynamic and kinetic effects in local bias-induced phase transitions. The approaches for visualization and analysis of five-dimensional data are discussed. The spatial and voltage variability of relaxation behavior of the a-c domain lead zirconate-titanate surface suggest the interpretation in terms of surface charge dynamics. This approach is applicable to local studies of dynamic behavior in any system with reversible bias-induced phase transitions ranging from ferroelectrics and multiferroics to ionic systems such as batteries, fuel cells, and electroresistive materials. (C) 2011 American Institute of Physics. [doi:10.1063/1.3590919]

Piezoelectric properties of PbTiO(3) thin films characterized with piezoresponse force and high resolution transmission electron microscopy

In this paper we investigate the piezoelectric properties of PbTiO(3) thin films grown by pulsed laser deposition with piezoresponse force microscopy and transmission electron microscopy. The as-grown films exhibit an upward polarization, inhomogeneous distribution of piezoelectric characteristics concerning local coercive fields, and piezoelectric coefficient. In fact, the data obtained reveal imprints during piezoresponse force microscopy measurements, nonlinearity in the piezoelectric deformation, and limited polarization reversal. Moreover, transmission electron microscopy shows the presence of defects near the film/substrate interface, which can be associated with the variations of piezoelectric properties.

Piezoresponse force microscopy of ferroelectric thin films: Frequency dependence of phase imaging

The objective of this work is an evaluation of quantitative measurements of piezoresponse force microscopy for nanoscale characterization of ferroelectric films. To this end, we investigate how the piezoresponse phase difference Delta Phi between c domains depends on the frequency omega of the applied ac field much lower than the cantilever first resonance frequency. The main specimen under study was a 102 nm thick film of Pb(Zr(0.2)Ti(0.8))O(3). For the sake of comparison, a 100 nm thick PbTiO(3) film was also used. From our measurements, we conclude a frequency dependent behavior Delta Phi similar to omega(-1), which can only be partially explained by the presence of adsorbates on the surface. (C) 2008 American Institute of Physics.

Piezoresponse force microscopy of ferroelectric relaxors

Nesta tese, ferroeléctricos relaxor (I dont know uf the order is correct) de base Pb das familias (Pb,La)(Zr,Ti)O3 (PLZT), Pb(Mg1/3,Nb2/3)O3-PbTiO3 (PMN-PT), Pb(Zn1/3,Nb2/3)O3-PbTiO3 (PZN-PT) foram investigados e analisados. As propriedades ferroeléctricas e dieléctricas das amostras foram estudadas por métodos convencionais de macro e localmente por microscopia de força piezoeléctrica (PFM). Nos cerâmicos PLZT 9.75/65/35 o contraste da PFM à escala nanometrica _ foi investigado em função do tamanho e orientação dos grãos. Apurou-se que a intensidade do sinal piezoeléctrico das nanoestruturas diminui com o aumento da temperatura e desaparece a 490 K (La mol. 8%) e 420 K (9,5%). Os ciclos de histerese locais foram obtidos em função da temperatura. A evolução dos parâmetros macroscópicos e locais com a temperatura de superfície sugere um forte efeito de superfície nas transições de fase ferroeléctricas do material investigado. A rugosidade da parede de domínio é determinada por PFM para a estrutura de domínio natural existente neste ferroeléctrico policristalino. Além disso, os domínios ferroeléctricos artificiais foram criados pela aplicação de pulsos eléctricos à ponta do condutor PFM e o tamanho de domínio in-plane foi medido em função da duração do pulso. Todas estas experiências levaram à conclusão de que a parede de domínio em relaxors do tipo PZT é quase uma interface unidimensional. O mecanismo de contraste na superfície de relaxors do tipo PLZT é medido por PFMAs estruturas de domínio versus evolução da profundidade foram estudadas em cristais PZN-4,5%PT, com diferentes orientações através da PFM. Padrões de domínio irregulares com tamanhos típicos de 20-100 nm foram observados nas superfícies com orientação <001> das amostras unpoled?. Pelo contrário, os cortes de cristal <111> exibem domínios regulares de tamanho mícron normal, com os limites do domínio orientados ao longo dos planos cristalográficos permitidos. A existência de nanodomínios em cristais com orientação <001> está provisoriamente (wrong Word) atribuída à natureza relaxor de PZN-PT, onde pequenos grupos polares podem formar-se em coindições de zero-field-cooling (ZFC). Estes nanodomínios são considerados como os núcleos do estado de polarização oposta e podem ser responsáveis pelo menor campo coercitivo para este corte de cristal em particular. No entanto, a histerese local piezoelétrica realizada pelo PFM à escala nanométrica indica uma mudança de comportamento de PZN-PT semelhante para ambas as orientações cristalográficas investigadas. A evolução das estruturas de domínio com polimento abaixo da superfície do cristal foi investigada. O domínio de ramificações e os efeitos de polarização de triagem após o polimento e as medições de temperatura têm sido estudados pela PFM e pela análise SEM. Além disso, verificou-se que a intensidade do sinal piezoeléctrico a partir das estruturas de nanodomínio diminui com o aumento da temperatura, acabando por desaparecer aos 430 K (orientaçáo <111>) e 470 K (orientação <100>). Esta diferença de temperatura nas transições de fase local em cristais de diferentes orientações é explicada pelo forte efeito de superfície na transição da fase ferroelétrica em relaxors.A comutação da polarização em relaxor ergódico e nas fases ferroeléctricas do sistema PMN-PT foram realizadas pela combinação de três métodos, Microscopia de Força Piezoeléctrica, medição de um único ponto de relaxamento eletromecânico e por ultimo mapeamento de espectroscopia de tensão. A dependência do comportamento do relaxamento na amplitude e tempo da tensão de pulso foi encontrada para seguir um comportamento logarítmico universal com uma inclinação quase constante. Este comportamento é indicativo da progressiva população dos estados de relaxamento lento, ao contrário de uma relaxação linear na presença de uma ampla distribuição do tempo de relaxamento. O papel do comportamento de relaxamento, da não-linearidade ferroeléctrica e da heterogeneidade espacial do campo na ponta da sonda de AFM sobre o comportamento do ciclo de histerese é analisada em detalhe. Os ciclos de histerese para ergódica PMN- 10%PT são mostrados como cineticamente limitados, enquanto que no PMN, com maior teor de PT, são observados verdadeiros ciclos de histerese ferroeléctrica com viés de baixa nucleação.

Piezoresponse behavior of niobium doped bismuth ferrite thin films grown by chemical method

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Piezoresponse force microscopy characterization of rare-earth doped BiFeO3 thin films grown by the soft chemical method

The multiferroic behavior with ion modification using rare-earth cations on crystal structures, along with the insulating properties of BiFeO3 (BFO) thin films was investigated using piezoresponse force microscopy. Rare-earth-substituted BFO films with chemical compositions of (Bi 1.00-xRExFe1.00O3 (x=0; 0.15), RE=La and Nd were fabricated on Pt (111)/Ti/SiO2/Si substrates using a chemical solution deposition technique. A crystalline phase of tetragonal BFO was obtained by heat treatment in ambient atmosphere at 500 °C for 2 h. Ion modification using La3+ and Nd3+ cations lowered the leakage current density of the BFO films at room temperature from approximately 10-6 down to 10-8 A/cm2. The observed improved magnetism of the Nd3+ substituted BFO thin films can be related to the plate-like morphology in a nanometer scale. We observed that various types of domain behavior such as 71° and 180° domain switching, and pinned domain formation occurred. The maximum magnetoelectric coefficient in the longitudinal direction was close to 12 V/cm Oe. © 2012 Elsevier Ltd and Techna Group S.r.l.

Piezoresponse force microscopy behaviour of Bi4Ti3O12 ceramics with various excess bismuth

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of oxidizing and reducing atmospheres on Ba(Ti0.90 Zr0.10)O3:2V ceramics as characterized by piezoresponse force microscopy

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

The structural and piezoresponse properties of c-axis-oriented Aurivillius phase Bi5Ti3FeO15 thin films deposited by atomic vapor deposition

The deposition by atomic vapor deposition of highly c-axis-oriented Aurivillius phase Bi 5Ti 3FeO 15 (BTFO) thin films on (100) Si substrates is reported. Partially crystallized BTFO films with c-axis perpendicular to the substrate surface were first deposited at 610°C (8 excess Bi), and subsequently annealed at 820°C to get stoichiometric composition. After annealing, the films were highly c-axis-oriented, showing only (00l) peaks in x-ray diffraction (XRD), up to (0024). Transmission electron microscopy (TEM) confirms the BTFO film has a clear layered structure, and the bismuth oxide layer interleaves the four-block pseudoperovskite layer, indicating the n 4 Aurivillius phase structure. Piezoresponse force microscopy measurements indicate strong in-plane piezoelectric response, consistent with the c-axis layered structure, shown by XRD and TEM.