On the nature of iron in InP: A FTIR study

Fe is still the commonly used dopant to fabricate semi-insulating(SI) InP, a key material for high-speed electronic and optoelectronic devices. High resolved absorption spectra of the internal d-d shell transitions at Fe2+ in InP and the related phonon sidebands and a series of iron related absorption Lines are presented. Detailed infrared absorption study of the characteristic spectra of four zero-phonon lines(ZPLs), which are attributed to transitions within the 5D ground state of Fe2+ (3d(6)) on the indium site in a tetrahedral crystal field of phosphorus atoms and their temperature effects are given.

Vibrational spectrum and luminescence properties of CaAl2B2O7 : Eu3+

The vibrational spectrum of the CaAl2B2O7 was investigated. It was shown that the vibrations of the BO3 groups are present in the region of 1400 similar to 600 cm(-1), and the bands at 519 nm(-1) may originate from the AlO6 vibration. The luminescence properties of Eu3+ in CaAl2B2O7 were investigated. It was found that the Eu3+ ion in CaAl2B2O7 occupies two different sites. Investigation on the phonon sideband of Eu3+ indicates that BO3 groups are present in the:surroundings of Eu3+ ions.

The change of Eu3+-surroundings in the system Al2O3-B2O3 containing Eu3+ ions

The change of Eu3+-surroundings with the Al/B ratio varying from 4.5 to 2 and Eu/(Al + B) = 0.02, was investigated through X-ray diffraction, infrared spectra, excitation and emission spectra, and phonon sideband. The results show coexistence of the crystal phase Al18B4O33 and the amorphous phase and Eu3+ ions of the samples with the Al/B ratio from 3 to 2 are incorporated into the amorphous phase. It was also found that electron-phonon coupling strength decreases with the Al/B ratio from 3 to 2, non-radiative decay rate decreases, resulting in an increase of the Eu3+-emission intensity. (C) 1999 Elsevier Science Ltd. All rights reserved.

Vibrational spectrum and luminescence properties of the system Al2O3-B2O3-Eu2O3

The system Al2O3-B2O3-Eu2O3, with Al/B ratio varying from 4.5 to 2 and Eu/(Al+B)=0.02, was synthesized by solid state reaction. The vibrational spectra of the system Al2O3-B2O3-Eu2O3 were investigated. It was found that no definite change in the regions of 1200 similar to 1000 cm(-1) due to the adsorption BO4 groups with decreasing Al/B ratio, indicating no Al3+ ion was substituted by Eu3+ ions and other changes revealed that there was an amorphous phase and Eu3+ ions may dope into the amorphous phase. The studies on the luminescent properties of the system Al2O3-B2O3 also show that Eu3+ ions dope into amorphous phase. The investigations on the phonon sideband of Eu3+ indicate that electron-phonon coupling strength decreases with Al/B ratio change from 3 to 2, leading to the non-radiative decay rate decreases and the Eu3+-emission intensity increase.

Raman-active wurtzite CdO nanophase and phonon signatures in CdO/ZnO heterostructures fabricated by nonequilibrium laser plasma ablation and stress control

A combination of laser plasma ablation and strain control in CdO/ZnO heterostructures is used to produce and stabilize a metastable wurtzite CdO nanophase. According to the Raman selection rules, this nanophase is Raman-active whereas the thermodynamically preferred rocksalt phase is inactive. The wurtzite-specific and thickness/strain-dependent Raman fingerprints and phonon modes are identified and can be used for reliable and inexpensive nanophase detection. The wurtzite nanophase formation is also confirmed by x-ray diffractometry. The demonstrated ability of the metastable phase and phonon mode control in CdO/ZnO heterostructures is promising for the development of next-generation light emitting sources and exciton-based laser diodes.

Phonon modes of MgB2 : Super-lattice structures and spectral response

Micrometre-sized MgB2 crystals of varying quality, synthesized at low temperature and autogeneous pressure, are compared using a combination of Raman and Infra-Red (IR) spectroscopy. These data, which include new peak positions in both spectroscopies for high quality MgB2, are interpreted using DFT calculations on phonon behaviour for symmetry-related structures. Raman and IR activity additional to that predicted by point group analyses of the P6/mmm symmetry are detected. These additional peaks, as well as the overall shapes of calculated phonon dispersion (PD) models are explained by assuming a double super-lattice, consistent with a lower symmetry structure for MgB2. A 2x super-lattice in the c-direction allows a simple correlation of the pair breaking energy and the superconducting gap by activation of corresponding acoustic frequencies. A consistent physical interpretation of these spectra is obtained when the position of a phonon anomaly defines a super-lattice modulation in the a-b plane.

Coherent phonon decay and the boron isotope effect for MgB2

Ab-initio DFT calculations for the phonon dispersion (PD) and the Phonon Density Of States (PDOS) of the two isotopic forms (10B and 11B) of MgB2 demonstrate that use of a reduced symmetry super-lattice provides an improved approximation to the dynamical, phonon-distorted P6/mmm crystal structure. Construction of phonon frequency plots using calculated values for these isotopic forms gives linear trends with integer multiples of a base frequency that change in slope in a manner consistent with the isotope effect (IE). Spectral parameters inferred from this method are similar to that determined experimentally for the pure isotopic forms of MgB2. Comparison with AlB2 demonstrates that a coherent phonon decay down to acoustic modes is not possible for this metal. Coherent acoustic phonon decay may be an important contributor to superconductivity for MgB2.

Phonon anomalies predict superconducting Tc for AlB2-type structures

We show that the well-known Kohn anomaly predicts Tc for ordered AlB2-type structures. We use ab initio Density Functional Theory to calculate phonon dispersions for Mg1-xAlxB2 compositions and identify a phonon anomaly with magnitude that predicts experimental values of Tc for all x. Key features of these anomalies correlate with the electronic structure of Mg1-xAlxB2. This approach predicts Tc for other known AlB2-type structures as well as new compositions. We predict that Mg0.5Ba0.5B2 will show Tc = 63.6 ± 6.6 K. Other forms of the Mg1-xBaxB2 series will also be superconductors when successfully synthesised. Our calculations predict that the end-member composition, BaB2, is likely to show a Tc significantly higher than currently achieved by other diborides although an applied pressure ~16 GPa may be required to stabilise the structure.

Low-temperature and high-pressure Raman and x-ray studies of pyrochlore Tb2Ti2O7: Phonon anomalies and possible phase transition

We have carried out temperature- and pressure-dependent Raman and x-ray measurements on single crystals of Tb2Ti2O7. We attribute the observed anomalous temperature dependence of phonons to phonon-phonon anharmonic interactions. The quasiharmonic and anharmonic contributions to the temperature-dependent changes in phonon frequencies are estimated quantitatively using mode Grüneisen parameters derived from pressure-dependent Raman experiments and bulk modulus from high-pressure x-ray measurements. Further, our Raman and x-ray data suggest a subtle structural deformation of the pyrochlore lattice at ~9 GPa. We discuss possible implications of our results on the spin-liquid behavior of Tb2Ti2O7.

Phonon renormalization in doped bilayer graphene

We report phonon renormalization in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping as a result of the nonadiabatic Kohn anomaly at the Gamma point. The bilayer has two conduction and valence subbands, with splitting dependent on the interlayer coupling. This gives a change of slope in the variation of G peak position with doping which allows a direct measurement of the interlayer coupling strength.

Renormalization of the phonon spectrum in semiconducting single-walled carbon nanotubes studied by Raman spectroscopy

In situ Raman experiments together with transport measurements have been carried out in single-walled carbon nanotubes as a function of electrochemical top gate voltage (Vg). We have used the green laser (EL=2.41 eV), where the semiconducting nanotubes of diameter ~1.4 nm are in resonance condition. In semiconducting nanotubes, the G−- and G+-mode frequencies increase by ~10 cm−1 for hole doping, the frequency shift of the G− mode is larger compared to the G+ mode at the same gate voltage. However, for electron doping the shifts are much smaller: G− upshifts by only ~2 cm−1 whereas the G+ does not shift. The transport measurements are used to quantify the Fermi-energy shift (EF) as a function of the gate voltage. The electron-hole asymmetry in G− and G+ modes is quantitatively explained using nonadiabatic effects together with lattice relaxation contribution. The electron-phonon coupling matrix elements of transverse-optic (G−) and longitudinal-optic (G+) modes explain why the G− mode is more blueshifted compared to the G+ mode at the same Vg. The D and 2D bands have different doping dependence compared to the G+ and G− bands. There is a large downshift in the frequency of the 2D band (~18 cm−1) and D (~10 cm−1) band for electron doping, whereas the 2D band remains constant for the hole doping but D upshifts by ~8 cm−1. The doping dependence of the overtone of the G bands (2G bands) shows behavior similar to the dependence of the G+ and G− bands.

Possibility of a condensed phase of excitons because of phonon induced exciton-exciton pairing

In this paper we study the phonon-induced exciton-exciton interaction. It is found that the interaction can be attractive under certain conditions. Taking into account this attractive interaction, the pairing of excitons with opposite momenta is studied and the excitation spectrum determined. The results are similar to a system of bosons. There appears to be some possibility of superfluid behaviour.

Intrinsic two-phonon-exchange mechanism of superconductivity and enhancement of Tc

It is shown that the intrinsic two-phonon terms occurring in first order in the electron-phonon interaction Hamiltonian can give rise to (i) an essential doubling of the interaction phase space (BCS cutoff) and (ii) an attractive pairing interaction proportional to the phonon occupation numbers. This suggests a possible enhancement of the superconductive transition temperature in the presence of high-frequency acoustic field.

Optic-phonon-magnetoplasmons at the interface of two polar semiconductors semiconductors

An interface between two polar semiconductors can support a whole new family of seven type of optic-phonon magnetoplasmons. Six of these arise due to nonequivalence property of propagation introduced by the magnetic field in Voigt configuration and one mainly due to finite plasma density ratio at the interface.

Optic phonon-magnetoplasmon surface oscillations in polar semiconductors

An interface between two polar semiconductors in parallel magnetic field geometry can support at most four types of surface oscillations; the actual number (less-than-or-equals, slant4), however, depends on the strength of the magnetic field. The interface effects on these relevant ranges of magnetic field are analysed in detail.