Passive mode locking in erbium-doped fibre laser by carbon nanotubes

Passively mode locked fibre lasers have a variety of applications ranging from telecommunication to medical photonics. Carbon nanotubes (CNTs) have attracted recently a great deal of attention as a promising solution for saturable absorber elements required for laser mode locking (see e.g. [1-3] and references therein). CNTs can be used as a saturable absorber in passively mode locked fibre laser directly [1,2] or as a CNTs polymer composites [3]. An attractive feature of CNT-based solutions in fibre lasers is a possibility to maintain the compactness, robustness of all-fibre format and low cost through using all standard telecom compatible components. The two important technical challenges in such type of lasers are: (i) to achieve stable polarization properties of the generated radiation without using complex control elements, and, (ii) to avoid low frequency instabilities of the mode-locked pulse train. In this paper we report results of the experiments on mode-locked soliton fibre laser using the following standard components: 1m of highly doped erbium fibre (Liekki Er80-8/125) serves as the gain medium with nominal absorption of 80 dB/m at 1530 nm; a 976 nm laser diode providing up to 310mW power is used to pump the laser via a 980/1550 wavelength division multiplexing; an isolator is employed to ensure single direction oscillation; SMF-28 is used to create necessary amount of anomalous dispersion to form soliton pulse making the total cavity length around 7.83 m; the CNT-polyvinyl alcohol polymer saturable absorber sandwiched in the FC/PC connector is used as a mode-locker device (see [3] for details). © 2011 IEEE.

Transient pulse evolution of active mode locking in an intracavity frequency-doubled laser

The theory of transient mode locking for an active modulator in an intracavity frequency-doubled laser is presented. The theory is applied to mode-locked and intracavity frequency-doubled Nd:YAG laser and the mode-locked pulse width is plotted as a function of number of round trips inside the cavity. It is found that the pulse compression is faster and the system takes a very short time to approach the steady state in the presence of a second harmonic generating crystal inside the laser cavity. The effect of modulation depth and the second harmonic conversion efficiency on the temporal behavior of the pulse width is discussed. Journal of Applied Physics is copyrighted by The American Institute of Physics.

Transient pulse evolution of active-mode locking in an intra-cavity frequency-doubled laser

The theory of transient mode locking for an active modulator in an intracavity frequency-doubled laser is presented. The theory is applied to mode-locked and intracavity frequency-doubled Nd:YAG laser and the mode-locked pulse width is plotted as a function of number of round trips inside the cavity. It is found that the pulse compression is faster and the system takes a very short time to approach the steady state in the presence of a second harmonic generating crystal inside the laser cavity. The effect of modulation depth and the second harmonic conversion efficiency on the temporal behavior of the pulse width is discussed.

Mode-locking by nanotubes of a Raman laser based on a highly doped GeO 2 fiber

A mode-locked Raman laser, using 25 m of a GeO2 doped fiber as the gain medium, is reported employing carbon nanotubes. The oscillator generates 850 ps chirped pulses, which are externally compressed to 185 ps. © 2012 OSA.

Hybrid and passive mode-locking of a monolithic two-section MQW InGaN/GaN laser diode

We report the first hybrid mode-locking of a monolithic two-section multiple quantum well InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-μm-long absorber section located at the back facet and generates a continuous stable 28.6 GHz pulse train with an average output power of 9.4 mW at an emission wavelength of 422 nm. Under hybrid mode-locking, the pulse width reduces to 4 ps, the peak power increases to 72 mW, and the microwave linewidth reduces by 13 dB to <500 kHz. We also observe the passive mode-locking with pulse width and peak power of 8 ps and 37 mW, respectively. © 1989-2012 IEEE.

DIRECT DETECTION OF PICOSECOND PULSES EMITTED BY AN INJECTION LASER WITH ACTIVE MODE LOCKING.

An Agat-SF linear-scan streak image-converter camera was used to record output pulses of 2. 7 psec duration generated by an injection laser with an external dispersive resonator operated in the active mode-locking regime. The duration of the pulses was determined by the reciprocal of the spectral width and the product of the duration and the spectral width was 0. 30.

Passive and hybrid mode-locking from a monolithic InGaN/GaN laser diode

We report 4ps and 8ps pulse generation from a two-section monolithic InGaN/GaN laser by hybrid and passive mode-locking, respectively. Pulse trains at a repetition rate of 28.6GHz and an emission wavelength of 422nm are generated. © 2013 The Optical Society.

Mode-locking by nanotubes of a raman laser based on a highly doped GeO2 fiber

A mode-locked Raman laser, using 25 m of a GeO2 doped fiber as the gain medium, is reported employing carbon nanotubes. The oscillator generates 850 ps chirped pulses, which are externally compressed to 185 ps. © OSA 2012.

Experimental study on a diode-pumped passively mode-locking Nd : GdVO4/SESAM laser

We demonstrate a low-threshold and efficient diode-pumped passively continuous wave (CW) mode-locked Nd:GdVO4 laser with a reflective semiconductor saturable absorber mirror (SESAM). The threshold for the continuous wave was 0.36 W, and it is the lowest threshold for a continuous wave in a passively mode-locked Nd:GdVO4 laser to our knowledge. The maximum average output power of 1.82 W was obtained at a pump power of 6.65 W with a slope efficiency of about 29%. The CW mode-locked pulse duration was measured to be about 10.5 ps with a 116-MHz repetition rate.

High efficiency passively Q-switched mode-locking Nd:GdVO4 laser with LT-In0.25Ga0.75As saturable absorber

The generation of passively Q-switched mode-locking operation with 100% modulation depth has been observed from a diode-pumped Nd GdVO4 laser with a low temperature In0.25Ga0.75As saturable absorber, which was grown by the metal-organic chemical-vapor deposition technique and acted as saturable absorber as well as output coupler. The repetition rate and pulse duration of the mode-locked pulses concentrated in the Q-switch envelop were 455 MHz and 12 ps, respectively. The average output power was 1.8 W and the slope efficiency was 36%. (C) 2009 Elsevier B.V. All rights reserved.