Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films by photoluminescence and x-ray photoelectron spectroscopy

ZnO films prepared at different temperatures and annealed at 900 degrees C in oxygen are studied by photoluminescence (PL) and x-ray photoelection spectroscopy (XPS). It is observed that in the PL of the as-grown films the green luminescence (GL) and the yellow luminescence (YL) are related, and after annealing the GL is restrained and the YL is enhanced. The O 1s XPS results also show the coexistence of oxygen vacancy (Vo) and interstitial oxygen (O-i) before annealing and the quenching of the V-o after annealing. By combining the two results it is deduced that the GL and YL are related to the V-o and O-i defects, respectively.

Neutron irradiation-infrared based measurement method for interstitial oxygen in heavily boron-doped silicon

A novel method, based on an infrared absorption and neutron irradiation technique, has been developed for the determination of interstitial oxygen in heavily boron-doped silicon. The new procedure utilizes fast neutron irradiated silicon wafer specimens. On fast neutron irradiation, the free carriers of high concentration in silicon can be trapped by the irradiated defects and the resistivity increased. The resulting calibration curve for the measurement of interstitial oxygen in boron-doped silicon has been established on the basis of the annealing behaviour of irradiated boron-doped CZ silicon.

Low-temperature (10 K) infrared measurement of interstitial oxygen in heavily antimony-doped silicon via wafer thinning

A new technique is reported for the rapid determination of interstitial oxygen in heavily Sb-doped silicon. This technique includes wafer thinning and low-temperature 10 K infrared measurement on highly thinned wafers. The fine structure of the interstitial oxygen absorption band around 1136 cm(-1) is obtained. Our results show that this method efficiently reduces free-carrier absorption interference, allowing a high reliability of measurement, and can be used at resistivities down to 1 x 10(-2) Omega cm for heavily Sb-doped silicon.

Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR

于2010-11-23批量导入

Study of interstitial oxygen mobility in RuSr2GdCu2O8 by internal friction

The discovery of the spatial uniform coexistence of superconductivity and ferromagnetism in ruthenocuprates, RuSr2GdCu2O8 (Ru-1212), has spurred an extraordinary development in the study of the competition between magnetism and superconductivity. However, several points of their preparation process and characterization that determine their superconductive behaviour are still obscure. The improvement of sample preparation conditions involves some thermal treatments in inert atmosphere. Anelastic spectroscopy measurements were made using an inverted torsion pendulum, operating with an oscillation frequency of 38 Hz, temperature in the 90 and 310 K range, heating rate of 1 K/min, and vacuum better than 10(-3) Pa. The results show anelastic relaxation peaks at 210 K related to the presence of interstitial oxygen atoms. The peaks decrease significantly with the oxygen loss caused by the heat treatments in vacuum, appearing again after the annealing of the sample in an oxygen atmosphere. These observed peaks are clearly related to the additional oxygen atoms, with activation energy 0.13 and 0.36 eV, and can be explained in terms by diffusional jumps of interstitial oxygen in the RuO2 planes. (C) 2009 Elsevier B.V. All rights reserved.

Interstitial oxygen mobility in superconducting samples of Bi2Sr2CaCu2O8+y

Since high-temperature superconductors were discovered, several studies have been made on their physical properties, attempting to associate them to the origin of superconductivity. Obviously, the oxygen atoms interstitially dissolved in the matrix have an important role in superconductivity, since they move easily in the lattice. In addition, they contribute to hole creation in the CuO2 planes. Anelastic spectroscopy ( internal friction) measurements are sensitive tools for the study of defects in solids, in particular for oxygen mobility. In this paper, Bi2Sr2CaCu2O8+y samples with several different amounts of interstitial oxygen were analysed by means of anelastic spectroscopy measurements. The measurements were performed by using a torsion pendulum operating at a frequency of about 40 Hz. Complex relaxation structures were observed and attributed to the shift of the oxygen interstitial atoms in BiO chains.

Interstitial oxygen's influence on the corrosion behavior of Ti-9Mo alloys

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Anelastic behavior due to interstitial oxygen in SmBa(2)Cu(3)O7-delta

The composite SmBa2Cu3O7-delta (Sm-123), obtained by the substitution of the ion Y for Sm in the very well known and studied YBa2Cu3O7-delta (Y-123), is potentially attractive for better understanding superconductivity mechanisms and for its applications as electronic devices. Sm-123 samples show higher critical temperatures than Y-123 ones do and a larger solubility of Sm in Ba-Cu-O solvent, which makes their growth process faster. When oxygen is present interstitially, it strongly affects the physical properties of the material. The dynamics of oxygen can be investigated by anelastic spectroscopy measurements, a powerful technique for the precise determination of the oscillation frequency and the internal friction when atomic jumps are possible. Anelastic spectroscopy allows determining the elasticity modulus (related to the oscillation frequency) and the elastic energy loss (related to the internal friction) as a function of the temperature. The sample was also investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), and electric resistivity. The results obtained show a thermally activated relaxation structure composed by at least 3 relaxation processes. These processes may be attributed to the jumps of oxygen atoms present of the Cu-O plane in the orthorhombic phase.

Oxygen Interstitial Dynamics in Bi(2)Sr(2)CaCu(2)O(8+delta) Oxides Measured by Mechanical Spectroscopy

Many researchers became interested in the discovery of Bi(2)Sr(2)CaCu(2)O(8+delta) oxides with critical temperature of around 80 K. It is known that the critical temperature is related to the CuO2 planes of the material. For this reason, the study of the interstitial oxygen in these oxides is of great relevance. The samples were prepared by means of conventional solid state reactions, through the stoichiometric mixture of precursory powders. After the sinterization, the samples were submitted to measurements of density, electrical resistivity, x-ray diffraction, scanning electron microscopy and energy dispersion spectroscopy, with the objective of performing their characterization. The measurements of mechanical spectroscopy were performed by a torsion pendulum. The results show three relaxation processes in the temperature range of 200 and 700 K, with activation energy of approximately 0.9 eV, which has been attributed to the dynamics of the interstitial oxygen present in the material.

Position preference and diffusion path of an oxygen ion in apatite-type lanthanum silicate La9.33Si6O26: A density functional study

Using density functional theory, we investigated the position preference and diffusion mechanisms of interstitial oxygen ions in lanthanum silicate La9.33Si6O26, which is an apatite-structured oxide and a promising candidate electrolyte material for solid oxide fuel cells. The reported lanthanum vacancies were explicitly taken into account by theoretically determining their arrangement with a supercell model. The most stable structures and the formation energies of oxygen interstitials were determined for each charged state. It was found that the double-negatively charged state is stable over a wide range of the Fermi level, and that the excess oxygen ions form split interstitials with the original oxygen ions, while the neutral and the single-negatively charged states preferably form molecular oxygen. These species were found near the lanthanum vacancy site. The theoretically determined migration pathway along the c-axis essentially follows an interstitialcy mechanism. The obtained migration barrier is sensitive to the charge state, and is also affected by the lanthanum vacancy. The barrier height of the double-negatively charged state was calculated to be 0.58 eV for the model structure, which is consistent with the measured activation energy.

Raman-forbidden mode and oxygen ordering in Bi2Sr2-xLaxCuO6+gamma single crystals annealed in oxygen

A Raman-forbidden phonon mode at about 840 cm(-1) is observed popularly on the surface of pun and La-doped Bi2Sr2-xLaxCuO6+y (0 less than or equal to x less than or equal to 0.8) single crystals annealed in oxygen. A remarkable excitation dependence of this additional line is found. Based on the properties of the structure of the Bi-O layer with excess oxygen atoms and the similarity in the appearance of the Raman-forbidden modes between RBa2Cu3Ox (R = Y, Nd, Gd, Pr) and Bi2Sr2-xLaxCuO6+y systems, we attribute the manifestation of this additional line to the ordering of the interstitial oxygen in the Bi-O layers. Our results provide Raman evidences for confirming that the ordering of the movable oxygen may exist universally in high-temperature superconductors.

Oxygen precipitation in Czochralski grown silicon heat treated at 525 degrees C

The diffusion of interstitial oxygen In silicon at 525 degrees C is studied using time-of-flight small-angle neutron scattering (SANS) to separate the elastic scattering from oxygen-containing aggregates from the inelastic scattering from neutron-phonon interactions. The growth of oxygen-containing aggregates as a function of time gives a diffusion coefficient, D, calculated from Ham's theory, that is I factor of similar to 3.8 +/- 1.4 times higher than that expected by extrapolation of higher and lower temperature data (D = 0.13 exp(-2.53 eV kT(-1)) cm(2) s(-1)). This result confirms previous observations of enhanced diffusion at intermediate temperatures (400 degrees C-650 degrees C) although the magnitude of the enhancement we find is Much smaller than that reported by some others.

Oxygen diffusion in superconducting oxides

Since the discovery of high-temperature superconductivity of cuprate oxides, it has been clear that it is strongly affected by the oxygen content, which is also a crucial factor to determine other physical properties of high T-c superconductors. Non-stoichiometric (interstitial) oxygen strongly influences the physical properties of various superconducting oxides, in particular by creating conducting holes. It is now ascertained that the amount of holes injected depends not only on the content of interstitial oxygen, but also on its ordering. Rearrangement of the oxygen ordering may occur even below room temperature due to the unusual high mobility of these atoms. This way, mechanical spectroscopy is one of the most adequate techniques for the study of the mobility (diffusion) of oxygen atoms. This technique allows the determination of the jump frequency of an atomic species precisely, regardless of the model or the different possible types of jumps. In order to evaluate the mobility and the effect of oxygen content on these oxides, ceramic samples we prepared and submitted to several oxygen removal cycles alternately with mechanical relaxation measurements. As for SBCO, it was assumed that the peak was due to O(1)-O(5) jumps of oxygen atoms at the chain terminals or in chain fragments in the orthorhombic phase. In the case of BSCCO, the results showed complex anelastic relaxation structures, which were attributed to interstitial oxygen atom jumps between two adjacent CuO planes.

Oxygen Diffusion in Ti-20Mo Alloys, used as Biomaterial, Measured by Mechanical Spectroscopy

Titanium alloys are favorable implant materials for orthopedic applications, due to their desirable properties such as good corrosion resistance, low elasticity modulus, and excellent biocornpatibility. The research on titanium alloys is concentrated in the beta type, as the Ti-20Mo alloys and the addition of interstitial elements in these metals cause changes in their mechanical properties. The mechanical spectroscopy measurements have been frequently used in order to verify the behavior of these interstitials atoms in metallic alloys. This paper presents the study of oxygen diffusion in Ti-20Mo alloys using mechanical spectroscopy measurements. A thermally activated relaxation structure was observed in the sample after oxygen doping. It was associated with the interstitial diffusion of oxygen atoms in a solid solution in the alloy. The diffusion coefficient for the oxygen diffusion in the alloy was obtained by the frequency dependence of the peak temperature and by using a simple mathematical treatment of the relaxation structure and the Arrhenius law.