Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy

In this paper, InGaAs quantum dots with an adjusting InGaAlAs layer underneath are grown on (n 1 1)A/B (n = 2-5) and the reference (1 0 0) substrates by molecular beam epitaxy. Small and dense InGaAs quantum dots are formed on (1 0 0) and (n 1 1)B substrates. A comparative study by atomic force microscopy shows that the alignment and uniformity for InGaAs quantum dots are greatly improved on(5 1 1)B but deteriorated on (3 1 1)B surface, demonstrating the great influence of the buried InGaAlAs layer. There is an increase in photoluminescence intensity and a decrease in the full-width at half-maximum when n varies from 2 to 5. Quantum dots formed on (3 1 1)A and (5 1 1)A surfaces are large and random in distribution, and no emission from these dots can be detected. (C) 1999 Elsevier Science B.V. All rights reserved.

Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates

The effects of InP substrate orientations on self-assembled InAs quantum dots (QDs) have been investigated by molecular beam epitaxy (MBE). A comparison between atomic force microscopy (AFM) and photoluminescence (PL) spectra shows that a high density of smaller InAs islands can be obtained by using such high index substrates. On the other hand, by introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs can be much more uniform in size and have a great improvement in PL properties. More importantly, 1.55-mu m luminescence at room temperature (RT) can be realized in InAs QDs deposited on (001) InP substrate with underlying In0.52Al0.24Ga0.24As layer. (C) 2000 Elsevier Science B.V. All rights reserved.

Structural and optical characterization of InAs nanostructures grown on high-index InP substrates

The structural and optical properties of InAs layers grown on high-index InP surfaces by molecular beam epitaxy are investigated in order to understand the self-organization of quantum dots and quantum wires on novel index surfaces. Four different InP substrate orientations have been examined, namely, (1 1 1)B, (3 1 1)A, and (3 1 1)B and (1 0 0). A rich variety of InAs nanostructures is formed on the surfaces. Quantum wire-like morphology is observed on the (1 0 0) surface, and evident island formation is found on (1 1 1)A and (3 1 1)B by atomic force microscopy. The photoluminescence spectra of InP (1 1 1)A and (3 1 1)B samples show typical QD features with PL peaks in the wavelength range 1.3-1.55 mu m with comparable efficiency. These results suggest that the high-index substrates are promising candidates for production of high-quality self-organized QD materials for device applications. (C) 1999 Elsevier Science B.V. All rights reserved.

Non-combinatorial library screening reveals subsite cooperativity and identifies new high-efficiency substrates for kallikrein-related peptidase 14

An array of substrates link the tryptic serine protease, kallikrein-related peptidase 14 (KLK14), to physiological functions including desquamation and activation of signaling molecules associated with inflammation and cancer. Recognition of protease cleavage sequences is driven by complementarity between exposed substrate motifs and the physicochemical signature of an enzyme's active site cleft. However, conventional substrate screening methods have generated conflicting subsite profiles for KLK14. This study utilizes a recently developed screening technique, the sparse matrix library, to identify five novel high-efficiency sequences for KLK14. The optimal sequence, YASR, was cleaved with higher efficiency (k(cat)/K(m)=3.81 ± 0.4 × 10(6) M(-1) s(-1)) than favored substrates from positional scanning and phage display by 2- and 10-fold, respectively. Binding site cooperativity was prominent among preferred sequences, which enabled optimal interaction at all subsites as indicated by predictive modeling of KLK14/substrate complexes. These simulations constitute the first molecular dynamics analysis of KLK14 and offer a structural rationale for the divergent subsite preferences evident between KLK14 and closely related KLKs, KLK4 and KLK5. Collectively, these findings highlight the importance of binding site cooperativity in protease substrate recognition, which has implications for discovery of optimal substrates and engineering highly effective protease inhibitors.

ZnO nanocones with high-index {101̅1} facets for enhanced energy conversion efficiency of dye-sensitized solar cells

ZnO is a promising photoanode material for dye-sensitized solar cells (DSCs) due to its high bulk electron mobility and because different geometrical structures can easily be tailored. Although various strategies have been taken to improve ZnO-based DSC efficiencies, their performances are still far lower than TiO2 counterparts, mainly because low conductivity Zn2+–dye complexes form on the ZnO surfaces. Here, cone-shaped ZnO nanocrystals with exposed reactive O-terminated {101̅1} facets were synthesized and applied in DSC devices. The devices were compared with DSCs made from more commonly used rod-shaped ZnO nanocrystals where {101̅0} facets are predominantly exposed. When cone-shaped ZnO nanocrystals were used, DSCs sensitized with C218, N719, and D205 dyes universally displayed better power conversion efficiency, with the highest photoconversion efficiency of 4.36% observed with the C218 dye. First-principles calculations indicated that the enhanced DSCs performance with ZnO nanocone photoanodes could be attributed to the strength of binding between the dye molecules and reactive O-terminated {101̅1} ZnO facets and that more effective use of dye molecules occurred due to a significantly less dye aggregation on these ZnO surfaces compared to other ZnO facets.

Plasmon nanofocusing with negative refraction in a high-index dielectric wedge

Here, we describe a metal-insulator-insulator nanofocusing structure formed by a high-permittivity dielectric wedge on a metal substrate. The structure is shown to produce nanofocusing of surface plasmon polaritons (SPPs) in the direction opposite to the taper of the wedge, including a range of nanoplasmonic effects such as nanofocusing of SPPs with negative refraction, formation of plasmonic caustics within a nanoscale distance from the wedge tip, mutual transformation of SPP modes, and significant local field enhancements in the adiabatic and strongly nonadiabatic regimes. A combination of approximate analytical and rigorous numerical approaches is used to analyze the strength and position of caustics in the structure. In particular, it is demonstrated that strong SPP localization within spatial regions as small as a few tens of nanometers near the caustic is achievable in the considered structures. Contrary to other nanofocusing configurations, efficient nanofocusing is shown to occur in the strongly nonadiabatic regime with taper angles of the dielectric wedge as large as ∼40° and within uniquely short distances (as small as a few dozens of nanometers) from the tip of the wedge. Physical interpretations of the obtained results are also presented and discussed.

Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes

A noncatalytic chemical vapor deposition mechanism is proposed, where high precursor concentration, long deposition time, high temperature, and flat substrate are needed to grow large-area nanocrystalline graphene using hydrocarbon pyrolysis. The graphene is scalable, uniform, and with controlled thickness. It can be deposited on virtually any nonmetallic substrate that withstands ∼1000 °C. For typical examples, graphene grown directly on quartz and sapphire shows transmittance and conductivity similar to exfoliated or metal-catalyzed graphene, as evidenced by transmission spectroscopy and transport measurements. Raman spectroscopy confirms the sp 2-C structure. The model and results demonstrate a promising transfer-free technique for transparent electrode production. © 2012 American Institute of Physics.

Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs(311)A substrates

The formation of triangular-shaped dot-like (TD) structures grown by molecular beam epitaxy on GaAs (311)A substrates patterned with square- and triangular-shaped holes is compared. On substrates patterned with square-shaped holes, TD structures are formed via the pinch-off of two symmetrically arranged {111} planes which develop freely in the regions between the holes on the original substrate surface, while the (111)A sidewalls of the as-etched holes develop a rough morphology during growth. The evolution of the rough ( 1 1 1)A sidewalls is eliminated on substrates patterned with triangular shaped holes resulting in similar TD structures with highly improved uniformity over the entire pattern. Spectrally and spatially resolved cathodoluminescence spectroscopy reveals the lateral variation of the quantum-well confinement energy in the TD structures generating distinct lateral energy barriers between the top portion and the nearby smooth regions with efficient radiative recombination. Formation of TD structures provides a new approach Do fabricate three-dimensionally confined nanostructures in a controlled manner.

Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)

Step like morphology of (331)A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of GaAs layers increase monotonically with increasing substrate temperatures. The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates. And, in atomic hydrogen assisted MBE, the terrace width reduces and density increases when depositing the same amount of GaAs. It attributes this to the reduced surface migration length of Ga adatoms with atomic hydrogen. Laterally ordered InAs self-aligned nano-wires were grown on GaAs (331)A surfaces and its optical polarization properties were revealed by photoluminescence measurements.

A reconstructed Siberian High index since A. D. 1599 from Eurasian and North American tree rings

The long-term variability of the Siberian High, the dominant Northern Hemisphere anticyclone during winter, is largely unknown. To investigate how this feature varied prior to the instrumental record, we present a reconstruction of a Dec-Feb Siberian High (SH) index based on Eurasian and North American tree rings. Spanning 1599-1980, it provides information on SH variability over the past four centuries. A decline in the instrumental SH index since the late 1970s, related to Eurasian warming, is the most striking feature over the past four hundred years. It is associated with a highly significant (p < 0.0001) step change in 1989. Significant similar to 3-4 yr spectral peaks in the reconstruction fall within the range of variability of the East Asian winter monsoon (which has also declined recently) and lend further support to proposed relationships between these largescale features of the climate system.

Ultrathin high-index metasurfaces for shaping focused beams

The volume size of a converging wave, which plays a relevant role in image resolution, is governed by the wavelength of the radiation and the numerical aperture (NA) of the wavefront. We designed an ultrathin (λ/8 width) curved metasurface that is able to transform a focused field into a high-NA optical architecture, thus boosting the transverse and (mainly) on-axis resolution. The elements of the metasurface are metal-insulator subwavelength gratings exhibiting extreme anisotropy with ultrahigh index of refraction for TM polarization. Our results can be applied to nanolithography and optical microscopy.

Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces

We reported the optical properties of self-assembled In0.55Al0.45As quantum dots grown by molecular beam epitaxy on (001) and (n11)A/B(n = 3,5)GaAs substrates. Two peaks were observed in the photoluminescence (PL) spectra from quantum dots in the (001) substrate and this suggested two sets of quantum dots different in size. For quantum dots in the high-index substrates, the PL spectra were related to the atomic-terminated surface (A or B substrate). The peaks for the B substrate surfaces were in the lower energy position than that for the (001) and A type. In addition, quantum dots in the B substrate have comparatively high quantum efficiency. These results suggested that high-index B-type substrate is more suitable for the fabrication of quantum dots than (001) and A-type substrates at the same growth condition. (C) 2000 American Vacuum Society. [S0734-211X(00)04701-6].

Optical transmission of periodic annular apertures in metal film on high-refractive index substrate: The role of the nanopillar shape

The influence of annular aperture parameters on the optical transmission through arrays of coaxial apertures in a metal film on high refractive index substrates has been investigated experimentally and numerically. It is shown that the transmission resonances are related to plasmonic crystal effects rather than frequency cutoff behavior associated with annular apertures. The role of deviations from ideal aperture shape occurring during the fabrication process has also been studied. Annular aperture arrays are often considered in many applications for achieving high optical transmission through metal films and understanding of nanofabrication tolerances are important. (C) 2010 American Institute of Physics.