Uniformidade de deposição de gotas de pulverização em plantas de amendoim e Brachiaria plantaginea

Objetivou-se neste trabalho avaliar a uniformidade da deposição de gotas de pulverização em plantas de amendoim e de Brachiaria plantaginea localizadas nas linhas e entrelinhas de semeadura da cultura. O experimento de campo foi realizado com a cultura de amendoim, cultivar IAC Tatu-ST. As pulverizações foram feitas com a cultura nos estádios vegetativo (V1) e reprodutivo (R2). Foi utilizado, como marcador das gotas depositadas, o corante Azul Brilhante (FD&C-1) na concentração de 500 ppm. Os tratamentos foram constituídos por sete pontas de pulverização: XR 110015 VS (150 L ha-1), XR 11002 VS (200 L ha-1), TX-VK 6 (150 L ha-1), TX-VK 8 (200 L ha-1), AI 110015 VS (150 L ha-1), AI11002 VS (200 L ha-1) e TJ60 11002 VS (150 e 200 L ha-1). Utilizou-se o delineamento experimental em blocos ao acaso, com quatro repetições. Para as análises qualitativas, os dados obtidos foram ajustados à curva de regressão pelo modelo de Gompertz. As pontas XR 11002 VS (200 L ha-1) e TX-VK 6 (150 L ha-1) proporcionaram as maiores uniformidades de distribuição da pulverização nas plantas de amendoim cultivar IAC Tatu ST nos estádios vegetativo (V1) e reprodutivo (R2), respectivamente. A uniformidade de deposição nas plantas de B. plantaginea teve grande variação nos depósitos unitários sobre as plantas localizadas na linha e entrelinha da cultura. Apenas a ponta XR 11002 VS (200 L ha¹) causa falhas de deposição em ambos os estádios de desenvolvimento da B. plantaginea localizada na linha da cultura. Quanto às plantas localizadas na entrelinha, a maior eficiência das pontas de pulverização ocorre no estádio de 3-5 perfilhos.

Aspectos quantitativos da deposição de gotas de pulverização em plantas de amendoim e Brachiaria plantaginea

The objective of this study was to evaluate the amount of spray deposition on peanut plants (Aracahis hypogaea) and on the weed Brachiaria plantaginea, in the rows and inter rows of the culture, as well as the amount of deposition on the soil. The study was conducted in the field using the peanut cultivar IAC Tatu-ST and the treatment applications were performed at the vegetative (V1) and reproductive (R2) stages. Brilliant Blue (FD&C-1) was used as tracer in water solution, at 500 ppm. The treatments were constituted of seven spray nozzles: XR 110015 VS (150 L ha(-1)), XR 11002 VS (200 L ha(-1)), TX-VK 6 (150 L ha(-1)), TX-VK 8 (200 L ha(-1)), AI 110015 VS (150 L ha(-1)), AI11002 VS (200 L ha(-1)) and TJ60 11002 VS (150 and 200 L ha(-1)). A randomized block design was used, with four replications. The results showed that the application of a larger spray volume increased the amount of depositions on the plants IAC Tatu ST at both stages of crop development, with the exception of spray nozzles XR 110015 VS and AI11002 VS, at the vegetative (V1) and reproductive (R2) stages of the culture, respectively; the greatest loss of drops in applications on the soil at the vegetative stage (V1) was provided by the spray nozzles AI 110015 VS and AI 11002 VS; however, at the reproductive stage (R2), the spray nozzle XR 11002 VS caused the greatest loss; The spray nozzles XR 11002 VS, AI 110015 VS, and TJ60 11002 VS (150 L ha(-1)) provided higher depositions on the leaves of B. plantaginea planted in the row than between the rows in the applications at the vegetative stage (V1), while at the reproductive stage (R2), the spray nozzles showed similar results for the deposition of droplets on the weed.

Avaliação de pontas de jato plano na deposição da calda de pulverização com diferentes combinações de plantas de feijão, Brachiaria plantaginea e Bidens pilosa

Objetivou-se com este trabalho avaliar a ponta XR na deposição da calda de pulverização com diferentes combinações de plantas de feijão, Brachiaria plantaginea e Bidens pilosa, em dois volumes de aplicação, com e sem a adição de surfatante Silwet. Foi utilizado como traçador o corante Azul Brilhante FDC -1 na concentração de 500 ppm para quantificar a deposição. Os tratamentos constituíram-se de sete combinações de plantas: (feijão), (B. plantaginea), (B. pilosa), (feijão + B. plantaginea), (feijão + B. pilosa), (B. plantaginea + B. pilosa) e (feijão + B. plantaginea + B. pilosa). O delineamento experimental foi o inteiramente casualizado. Foram avaliadas as pontas de jato plano XR 110015 VS e XR 11002 VS com volumes de aplicação de 150 e 200 L ha-1, respectivamente, com e sem a presença do Silwet a 0,05% v v-1. Após a aplicação, as plantas foram imediatamente coletadas e, em seguida, lavadas em 100 mL de água destilada, para posterior quantificação do traçador em espectrofotômetro. As pontas XR apresentaram comportamento distinto na deposição das gotas de pulverização nas espécies estudadas; a adição de um surfatante à calda de pulverização aumentou a uniformidade da deposição nos alvos e contribuiu para a redução do volume de aplicação.

Magnetic fields and uniformity of radio frequency power deposition in low-frequency inductively coupled plasmas with crossed internal oscillating currents

Radial and axial distributions of magnetic fields in a low-frequency (∼460 kHz)inductively coupled plasmasource with two internal crossed planar rf current sheets are reported. The internal antenna configuration comprises two orthogonal sets of eight alternately reconnected parallel and equidistant copper litz wires in quartz enclosures and generates three magnetic (H z, H r, and H φ) and two electric (E φ and E r) field components at the fundamental frequency. The measurements have been performed in rarefied and dense plasmas generated in the electrostatic(E) and electromagnetic (H)discharge modes using two miniature magnetic probes. It is shown that the radial uniformity and depth of the rf power deposition can be improved as compared with conventional sources of inductively coupled plasmas with external flat spiral (“pancake”) antennas. Relatively deeper rf power deposition in the plasma source results in more uniform profiles of the optical emission intensity, which indicates on the improvement of the plasma uniformity over large chamber volumes. The results of the numerical modeling of the radial magnetic field profiles are found in a reasonable agreement with the experimental data.

Layer uniformity of glancing angle deposition

Some results of an investigation on the layer thickness uniformity of glancing angle deposition are presented. A zirconia monolayer has been deposited by glancing angle deposition to analyze the layer thickness uniformity. The experimental results indicate that the thickness variation over the substrate is less than 0. 1%, which is considered as good uniformity. It is found that the non-uniformity of experimental results is larger than that of the theoretical results. (c) 2005 Elsevier Ltd. All rights reserved.

Uniformity of postprocessing of dense nanotube arrays by neutral and ion fluxes

The advantages of using low-temperature plasma environments for postprocessing of dense nanotube arrays are shown by means of multiscale hybrid numerical simulations. By controlling plasma-extracted ion fluxes and varying the plasma and sheath parameters, one can selectively coat, dope, or functionalize different areas on nanotube surfaces. Conditions of uniform deposition of ion fluxes over the entire nanotube surfaces are obtained for different array densities. The plasma route enables a uniform processing of lateral nanotube surfaces in very dense (with a step-to-height ratio of 1:4) arrays, impossible via the neutral gas process wherein radical penetration into the internanotube gaps is poor. © 2006 American Institute of Physics.

Nanocrystalline vanadium oxide films synthesized by plasma-assisted reactive rf sputtering deposition

Plasma-assisted reactive rf magnetron sputtering deposition is used to fabricate vanadium oxide films on glass, silica and silicon substrates. The process conditions are optimized to synthesize phase-pure vanadium pentoxide (V2O5) featuring a nanocrystalline structure with the predominant (0 0 1) crystallographic orientation, surface morphology with rod-like nanosized grains and very uniform (the non-uniformity does not exceed 4%) coating thickness over large surface areas. The V2O5 films also show excellent and temperature-independent optical transmittance in a broad temperature range (20-95 °C). The results are relevant to the development of smart functional coatings with temperature-tunable properties. © 2007 IOP Publishing Ltd.

Postglacial Early Permian (late Sakmarian-early Artinskian) shallow-marine carbonate deposition along a 2000 km transect from Timor to west Australia

Late Sakmarian to early Artinskian (Early Permian) carbonate deposition was widespread in the marine intracratonic rift basins that extended into the interior of Eastern Gondwana from Timor in the north to the northern Perth Basin in the south. These basins spanned about 20° of paleolatitude (approximately 35°S to 55°S). This study describes the type section of the Maubisse Limestone in Timor-Leste, and compares this unit with carbonate sections in the Canning Basin (Nura Nura Member of the Poole Sandstone), the Southern Carnarvon Basin (Callytharra Formation) and the northern Perth Basin (Fossil Cliff Member of the Holmwood Shale). The carbonate units have no glacial influence and formed part of a major depositional cycle that, in the southern basins, overlies glacially influenced strata and lies a short distance below mudstone containing marine fossils and scattered dropstones (perhaps indicative of sea ice). In the south marine conditions became more restricted and were replaced by coal measures at the top of the depositional sequence. In the north, the carbonate deposits are possibly bryozoan–crinoidal mounds; whereas in the southern basins they form laterally continuous relatively thin beds, deposited on a very low-gradient seafloor, at the tops of shale–limestone parasequences that thicken upward in parasequence sets. All marine deposition within the sequence took place under very shallow (inner neritic) conditions, and the limestones have similar grain composition. Bryozoan and crinoidal debris dominate the grain assemblages and brachiopod shell fragments, foraminifera and ostracod valves are usually common. Tubiphytes ranged as far south as the Southern Carnarvon Basin, albeit rarely, but is more common to the north. Gastropod and bivalve shell debris, echinoid spines, solitary rugose corals and trilobite carapace elements are rare. The uniformity of the grain assemblage and the lack of tropical elements such as larger fusulinid foraminifera, colonial corals or dasycladacean algae indicate temperate marine conditions with only a small increase in temperature to the north. The depositional cycle containing the studied carbonate deposits represents a warmer phase than the preceding glacially influenced Asselian to early Sakmarian interval and the subsequent cool phase of the “mid” Artinskian that is followed by significant warming during the late Artinskian–early Kungurian. The timing of cooler and warmer intervals in the west Australian basins seems out-of-phase with the eastern Australian succession, but this may be a problem of chronostratigraphic miscorrelation due to endemic faunas and palynofloras.

Atomic Layer Deposition and Photocatalytic Properties of Titanium Dioxide Thin Films

Photocatalytic TiO2 thin films can be highly useful in many environments and applications. They can be used as self-cleaning coatings on top of glass, tiles and steel to reduce the amount of fouling on these surfaces. Photocatalytic TiO2 surfaces have antimicrobial properties making them potentially useful in hospitals, bathrooms and many other places where microbes may cause problems. TiO2 photocatalysts can also be used to clean contaminated water and air. Photocatalytic oxidation and reduction reactions proceed on TiO2 surfaces under irradiation of UV light meaning that sunlight and even normal indoor lighting can be utilized. In order to improve the photocatalytic properties of TiO2 materials even further, various modification methods have been explored. Doping with elements such as nitrogen, sulfur and fluorine, and preparation of different kinds of composites are typical approaches that have been employed. Photocatalytic TiO2 nanotubes and other nanostructures are gaining interest as well. Atomic Layer Deposition (ALD) is a chemical gas phase thin film deposition method with strong roots in Finland. This unique modification of the common Chemical Vapor Deposition (CVD) method is based on alternate supply of precursor vapors to the substrate which forces the film growth reactions to proceed only on the surface in a highly controlled manner. ALD gives easy and accurate film thickness control, excellent large area uniformity and unparalleled conformality on complex shaped substrates. These characteristics have recently led to several breakthroughs in microelectronics, nanotechnology and many other areas. In this work, the utilization of ALD to prepare photocatalytic TiO2 thin films was studied in detail. Undoped as well as nitrogen, sulfur and fluorine doped TiO2 thin films were prepared and thoroughly characterized. ALD prepared undoped TiO2 films were shown to exhibit good photocatalytic activities. Of the studied dopants, sulfur and fluorine were identified as much better choices than nitrogen. Nanostructured TiO2 photocatalysts were prepared through template directed deposition on various complex shaped substrates by exploiting the good qualities of ALD. A clear enhancement in the photocatalytic activity was achieved with these nanostructures. Several new ALD processes were also developed in this work. TiO2 processes based on two new titanium precursors, Ti(OMe)4 and TiF4, were shown to exhibit saturative ALD-type of growth when water was used as the other precursor. In addition, TiS2 thin films were prepared for the first time by ALD using TiCl4 and H2S as precursors. Ti1-xNbxOy and Ti1-xTaxOy transparent conducting oxide films were prepared successfully by ALD and post-deposition annealing. Highly unusual, explosive crystallization behaviour occurred in these mixed oxides which resulted in anatase crystals with lateral dimensions over 1000 times the film thickness.

Copper Diffusion Barrier Deposition on Integrated Circuit Devices by Atomic Layer Deposition Technique

Transfer from aluminum to copper metallization and decreasing feature size of integrated circuit devices generated a need for new diffusion barrier process. Copper metallization comprised entirely new process flow with new materials such as low-k insulators and etch stoppers, which made the diffusion barrier integration demanding. Atomic Layer Deposition technique was seen as one of the most promising techniques to deposit copper diffusion barrier for future devices. Atomic Layer Deposition technique was utilized to deposit titanium nitride, tungsten nitride, and tungsten nitride carbide diffusion barriers. Titanium nitride was deposited with a conventional process, and also with new in situ reduction process where titanium metal was used as a reducing agent. Tungsten nitride was deposited with a well-known process from tungsten hexafluoride and ammonia, but tungsten nitride carbide as a new material required a new process chemistry. In addition to material properties, the process integration for the copper metallization was studied making compatibility experiments on different surface materials. Based on these studies, titanium nitride and tungsten nitride processes were found to be incompatible with copper metal. However, tungsten nitride carbide film was compatible with copper and exhibited the most promising properties to be integrated for the copper metallization scheme. The process scale-up on 300 mm wafer comprised extensive film uniformity studies, which improved understanding of non-uniformity sources of the ALD growth and the process-specific requirements for the ALD reactor design. Based on these studies, it was discovered that the TiN process from titanium tetrachloride and ammonia required the reactor design of perpendicular flow for successful scale-up. The copper metallization scheme also includes process steps of the copper oxide reduction prior to the barrier deposition and the copper seed deposition prior to the copper metal deposition. Easy and simple copper oxide reduction process was developed, where the substrate was exposed gaseous reducing agent under vacuum and at elevated temperature. Because the reduction was observed efficient enough to reduce thick copper oxide film, the process was considered also as an alternative method to make the copper seed film via copper oxide reduction.

Single layer graphene film by ethanol chemical vapor deposition: Highly efficient growth and clean transfer method

The choice of ethanol (C2H5OH) as carbon source in the Chemical Vapor Deposition (CVD) of graphene on copper foils can be considered as an attractive alternative among the commonly used hydrocarbons, such as methane (CH4) [1]. Ethanol, a safe, low cost and easy handling liquid precursor, offers fast and efficient growth kinetics with the synthesis of fullyformed graphene films in just few seconds [2]. In previous studies of graphene growth from ethanol, various research groups explored temperature ranges lower than 1000 °C, usually reported for methane-assisted CVD. In particular, the 650–850 °C and 900 °C ranges were investigated, respectively for 5 and 30 min growth time [3, 4]. Recently, our group reported the growth of highly-crystalline, few-layer graphene by ethanol-CVD in hydrogen flow (1– 100 sccm) at high temperatures (1000–1070 °C) using growth times typical of CH4-assisted synthesis (10–30 min) [5]. Furthermore, a synthesis time between 20 and 60 s in the same conditions was explored too. In such fast growth we demonstrated that fully-formed graphene films can be grown by exposing copper foils to a low partial pressure of ethanol (up to 2 Pa) in just 20 s [6] and we proposed that the rapid growth is related to an increase of the Cu catalyst efficiency due weak oxidizing nature of ethanol. Thus, the employment of such liquid precursor, in small concentrations, together with a reduced time of growth and very low pressure leads to highly efficient graphene synthesis. By this way, the complete coverage of a copper catalyst surface with high spatial uniformity can be obtained in a considerably lower time than when using methane.

Effect of post-deposition annealing on transverse piezoelectric coefficient and vibration sensing performance of ZnO thin films

The present experimental study investigates the influence of post-deposition annealing on the transverse piezoelectric coefficient (d(31)) value of ZnO thin films deposited on a flexible metal alloy substrate, and its relationship with the vibration sensing performance. Highly c-axis oriented and crystalline ZnO thin films were deposited on flexible Phynox alloy substrate via radio frequency (RF) reactive magnetron sputtering. ZnO thin film samples were annealed at different temperatures ranging from 100 degrees C to 500 degrees C, resulting in the temperature of 300 degrees C determined as the optimum annealing temperature. The crystallinity, morphology, microstructure, and rms surface roughness of annealed ZnO thin films were systematically investigated by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM), respectively. The piezoelectric d(31) coefficient value was measured by 4-point bending method. ZnO thin film annealed at 300 degrees C was highly c-axis oriented, crystalline, possesses fine surface morphology with uniformity in the grain size. This film showed higher d(31) coefficient value of 7.2 pm V-1. A suitable in-house designed and developed experimental set-up, for evaluating the vibration sensing performance of annealed ZnO thin films is discussed. As expected the ZnO thin film annealed at 300 degrees C showed relatively better result for vibration sensing studies. It generates comparatively higher peak output voltage of 147 mV, due to improved structural and morphological properties, and higher piezoelectric d(31) coefficient value. (C) 2014 Elsevier B. V. All rights reserved.

Plasma enhanced chemical vapour deposition carbon nanotubes/nanofibres - How uniform do they grow?

The ability to grow carbon nanotubes/nanofibres (CNs) with a high degree of uniformity is desirable in many applications. In this paper, the structural uniformity of CNs produced by plasma enhanced chemical vapour deposition is evaluated for field emission applications. When single isolated CNs were deposited using this technology, the structures exhibited remarkable uniformity in terms of diameter and height (standard deviations were 4.1 and 6.3% respectively of the average diameter and height). The lithographic conditions to achieve a high yield of single CNs are also discussed. Using the height and diameter uniformity statistics, we show that it is indeed possible to accurately predict the average field enhancement factor and the distribution of enhancement factors of the structures, which was confirmed by electrical emission measurements on individual CNs in an array.

In-situ deposition of sparse vertically aligned carbon nanofibres on catalytically activated stainless steel mesh for field emission applications

We report on an inexpensive, facile and industry viable carbon nanofibre catalyst activation process achieved by exposing stainless steel mesh to an electrolyzed metal etchant. The surface evolution of the catalyst islands combines low-rate electroplating and substrate dissolution. The plasma enhanced chemical vapour deposited carbon nanofibres had aspect-ratios > 150 and demonstrated excellent height and crystallographic uniformity with localised coverage. The nanofibres were well-aligned with spacing consistent with the field emission nearest neighbour electrostatic shielding criteria, without the need of any post-growth processing. Nanofibre inclusion significantly reduced the emission threshold field from 4.5 V/μm (native mesh) to 2.5 V/μm and increased the field enhancement factor to approximately 7000. © 2011 Elsevier B.V. All rights reserved.