A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector

A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector is proposed. In comparision with conventional i-CaN/n(+)-GaN structure, an additional thin p-GaN cap layer is introduced on the i-GaN(n(-)-GaN) in the new structure. The simulation results showed that the additional layer makes the dark current to decrease in the photodetector due to the increase of the Schottky barrier height. The effects of thickness and carrier concentration of p-GaN layer on the dark current of the photodetector were also studied. It is suggested that the dark current of the new structure device could be better reduced by employing p-GaN with higher carrier concentration as the cap layer.

Asymmetric dark current in double barrier quantum well infrared photodetectors

Asymmetric dark current and photocurrent versus voltage characteristic in the Double Barrier Quantum Wells (DBQWs) photovoltaic infrared photodetector has been studied. A model based on asymmetric potential barriers was proposed. The asymmetric potential thick barrier, which due to the Si dopant segregation during growth makes a major contribution to the asymmetrical I-V characteristic, calculations based on our model agree well with experimental results. This work also confirms the potential use of this DBQWs for infrared photodetector with large responsivity and little dark current under negative bias.

Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors

The dark current characteristics and temperature dependence for quantum dot infrared photodetectors have been investigated by comparing the dark current activation energies between two samples with identical structure of the dots-in-well in nanoscale but different microscale n-i-n environments. A sequential coupling transport mechanism for the dark current between the nanoscale and the microscale processes is proposed. The dark current is determined by the additive mode of two activation energies: E-a,E-micro from the built-in potential in the microscale and E-a,E-nano related to the thermally assisted tunneling in nanoscale. The activation energies E-a,E-micro and E-a,E-nano decrease exponentially and linearly with increasing applied electric field, respectively.

Observation of persistent photoconductivity in flower shaped PbS dendrite structures

We report the observation of persistent photoconductivity (PPC) in flower shaped PbS dendrites grown by the hydrothermal method. Potential fluctuations, due to the presence of various confinement regimes in the branches of dendrites, and surface traps, are likely responsible for the PPC observed here. We also observed photocurrent quenching and decreased dark current in the PPC below 40 K, due to the presence of a metastable state, whereas positive PPC was observed in the temperature region 40-220 K. Dark conductivity measurements, time constant parameters obtained from the stretched exponential fittings of PPC, also showed the metastable state related transition around 50 K.

Exploring novel methods to achieve sensitivity limits for high operating temperature infrared detectors

A review of high operating temperature (HOT) infrared (IR) photon detector technology vis-a-vis material requirements, device design and state of the art achieved is presented in this article. The HOT photon detector concept offers the promise of operation at temperatures above 120 K to near room temperature. Advantages are reduction in system size, weight, cost and increase in system reliability. A theoretical study of the thermal generation-recombination (g-r) processes such as Auger and defect related Shockley Read Hall (SRH) recombination responsible for increasing dark current in HgCdTe detectors is presented. Results of theoretical analysis are used to evaluate performance of long wavelength (LW) and mid wavelength (MW) IR detectors at high operating temperatures. (C) 2013 Elsevier B.V. All rights reserved.

Three-Dimensional Nanoarchitecture of BiFeO3 Anchored TiO2 Nanotube Arrays for Electrochemical Energy Storage and Solar Energy Conversion

Here, we report the synthesis of TiO2/BiFeO3 nano-heterostnicture (NH) arrays by anchoring BiFeO3 (BFO) particles on on TiO2 nanotube surface and investigate their pseudocapacitive and photoelectrochemical properties considering their applications in green energy fields. The unique TiO2/BFO NHs have been demonstrated both as energy conversion and storage materials. The capacitive behavior of the NHs has been found to be significantly higher than that of the pristine TiO2 NTs, which is mainly due to the anchoring of redox active BFO nanoparticles. A specific capacitance of about 440 F g(-1) has been achieved for this NHs at a current density of 1.1 A g(-1) with similar to 80% capacity retention at a current density of 2.5 A g(-1). The NHs also exhibit high energy and power performance (energy density of 46.5 Wh kg(-1) and power density of 1.2 kW kg(-1) at a current density of 2.5 A g(-1)) with moderate cycling stability (92% capacity retention after 1200 cycles). Photoelectrochemical investigation reveals that the photocurrent density of the NHs is almost 480% higher than the corresponding dark current and it shows significantly improved photoswitching performance as compared to pure TiO2 nanotubes, which has been demonstrated based the interfacial type-II band alignment between TiO2 and BFO.

ZnO quantum dots and graphene based heterostructure for excellent photoelastic and highly sensitive ultraviolet photodetector

Heterostructures comprised of zinc oxide quantum dots (ZnO QDs) and graphene are presented for ultraviolet photodetectors (UV PD). Graphene-ZnO QDs-graphene (G-ZnO QDs-G) based PD demonstrated an excellent UV photoresponse with outstanding photoelastic characteristics when illuminated for several cycles with a periodicity 5 s. PD demonstrated faster detection ability with the response and recovery times of 0.29 s in response to much lower UV illumination. A direct variation in photoresponse is revealed with the bias voltage as well as UV illumination intensity. A drastic reduction in the dark current is noticed due to potential barrier formation between adjacent ZnO QDs and the recombination rate reduces by directly transferring photogenerated charge carriers from ZnO QDs to graphene for enhanced the charge mobility.

InN Quantum Dot Based Infra-Red Photodetectors

Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of InN QDs was confirmed by X-ray diffraction. The dot densities were varied by varying the indium flux. Variation of dot density was confirmed by FESEM images. Interdigitated electrodes were fabricated using standard lithography steps to form metal-semiconductor-metal (MSM) photodetector devices. The devices show strong infrared response. It was found that the samples with higher density of InN QDs showed lower dark current and higher photo current. An explanation was provided for the observations and the experimental results were validated using Silvaco Atlas device simulator.

Solution processed Cu2SnS3 thin films for visible and infrared photodetector applications

The Cu2SnS3 thin films were deposited using an economic, solution processible, spin coating technique. The films were found to possess a tetragonal crystal structure using X-ray diffraction. The film morphology and the particle size were determined using scanning electron microscopy. The various planes in the crystal were observed using transmission electron microscopy. The optimum band gap of 1.23 eV and a high absorption coefficient of 104 cm-1 corroborate its application as a photoactive material. The visible and infrared (IR) photo response was studied for various illumination intensities. The current increased by one order from a dark current of 0.31 mu A to a current of 1.78 mu A at 1.05 suns and 8.7 mu A under 477.7 mW/cm(2) IR illumination intensity, at 3 V applied bias. The responsivity, sensitivity, external quantum efficiency and specific detectivity were found to be 10.93 mA/W, 5.74, 2.47% and 3.47 x 10(10) Jones respectively at 1.05 suns and 16.32 mA/W, 27.16, 2.53% and 5.10 x 10(10) Jones respectively at 477.7 mW/cm(2) IR illumination. The transient photoresponse was measured both for visible and IR illuminations. (C) 2016 Author(s).

Optical designs for improved solar cell performance

The solar resource is the most abundant renewable resource on earth, yet it is currently exploited with relatively low efficiencies. To make solar energy more affordable, we can either reduce the cost of the cell or increase the efficiency with a similar cost cell. In this thesis, we consider several different optical approaches to achieve these goals. First, we consider a ray optical model for light trapping in silicon microwires. With this approach, much less material can be used, allowing for a cost savings. We next focus on reducing the escape of radiatively emitted and scattered light from the solar cell. With this angle restriction approach, light can only enter and escape the cell near normal incidence, allowing for thinner cells and higher efficiencies. In Auger-limited GaAs, we find that efficiencies greater than 38% may be achievable, a significant improvement over the current world record. To experimentally validate these results, we use a Bragg stack to restrict the angles of emitted light. Our measurements show an increase in voltage and a decrease in dark current, as less radiatively emitted light escapes. While the results in GaAs are interesting as a proof of concept, GaAs solar cells are not currently made on the production scale for terrestrial photovoltaic applications. We therefore explore the application of angle restriction to silicon solar cells. While our calculations show that Auger-limited cells give efficiency increases of up to 3% absolute, we also find that current amorphous silicion-crystalline silicon heterojunction with intrinsic thin layer (HIT) cells give significant efficiency gains with angle restriction of up to 1% absolute. Thus, angle restriction has the potential for unprecedented one sun efficiencies in GaAs, but also may be applicable to current silicon solar cell technology. Finally, we consider spectrum splitting, where optics direct light in different wavelength bands to solar cells with band gaps tuned to those wavelengths. This approach has the potential for very high efficiencies, and excellent annual power production. Using a light-trapping filtered concentrator approach, we design filter elements and find an optimal design. Thus, this thesis explores silicon microwires, angle restriction, and spectral splitting as different optical approaches for improving the cost and efficiency of solar cells.

一种改进型金属-半导体-金属光电探测器数学模型

以E. Sano的金属-半导体-金属光电探测器(MSM-PD)模型为基础,提出了一种改进型的模型。该模型以多个电流源和电容并联的形式构造,以吸收区过剩电子和空穴总数为研究对象,求解速率方程。另外计算了电容,给出了暗电流与端电压的非线性计算式,改进了传统模型中暗电流的线性计算方法。通过线性叠加给出了该模型光电流的数学解析解。通过在Matlab中的模拟计算,表明该模型具有计算量小、准确度高的特点,它不仅能反映一定偏压和光照下光电流的变化,而且能展示光电子在器件中的转化过程。这种模型也能较好地应用于微弱信号的检

Near-ultraviolet zinc oxide nanowire sensor using low temperature hydrothermal growth.

Two near-ultraviolet (UV) sensors based on solution-grown zinc oxide (ZnO) nanowires (NWs) which are only sensitive to photo-excitation at or below 400 nm wavelength have been fabricated and characterized. Both devices keep all processing steps, including nanowire growth, under 100 °C for compatibility with a wide variety of substrates. The first device type uses a single optical lithography step process to allow simultaneous in situ horizontal NW growth from solution and creation of symmetric ohmic contacts to the nanowires. The second device type uses a two-mask optical lithography process to create asymmetric ohmic and Schottky contacts. For the symmetric ohmic contacts, at a voltage bias of 1 V across the device, we observed a 29-fold increase in current in comparison to dark current when the NWs were photo-excited by a 400 nm light-emitting diode (LED) at 0.15 mW cm(-2) with a relaxation time constant (τ) ranging from 50 to 555 s. For the asymmetric ohmic and Schottky contacts under 400 nm excitation, τ is measured between 0.5 and 1.4 s over varying time internals, which is ~2 orders of magnitude faster than the devices using symmetric ohmic contacts.

Durability and photo-electric characteristics of a mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film

A mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film and a mixed amorphous Se-As2Se3 film is compared from a durability perspective and photo-electric perspective. The former is durable to incident laser induced degradation after numerous laser scans and does not crystallise till 105 of annealing, both of which are improved properties from the mixed evaporated film. In terms of photo-electric properties, the ratio between the photocurrent and the dark current improved whereas the increase of the dark current was higher than that of As2Se3 due to the unique current path developed within the mille-feuille structure. Implementing this structure into various amorphous semiconductors may open up a new possibility towards structure-sensitive amorphous photoconductors. © 2013 Elsevier B.V.

Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs

Top-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 mu m at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 x 10(-6) A/cm(2) at 0 V bias and 2.24 x 10(-4) A/cm(2) at a reverse bias of 5 V. At a wavelength of 1.55 mu m, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 mu m diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices.

Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition

We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees C without thermal annealing and allowing the integration with standard silicon processes. Due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between Ge and Si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial Ge films. The diode with a responsivity of 0.23 A/W at 1.55 mu m wavelength and a bulk dark current density of 10 mA/cm(2) is demonstrated. These diodes with high performances and full compatibility with the CMOS processes enable monolithically integrating microphotonics and microelectronics on the same chip.