969 resultados para circuit design


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The recent trend towards minimizing the interconnections in large scale integration (LSI) circuits has led to intensive investigation in the development of ternary circuits and the improvement of their design. The ternary multiplexer is a convenient and useful logic module which can be used as a basic building block in the design of a ternary system. This paper discusses a systematic procedure for the simplification and realization of ternary functions using ternary multiplexers as building blocks. Both single level and multilevel multiplexing techniques are considered. The importance of the design procedure is highlighted by considering two specific applications, namely, the development of ternary adder/subtractor and TCD to ternary converter.

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A novel CMOS-based preamplifier for amplifying brain neural signal obtained by scalp electrodes in brain-computer interface (BCI) is presented in this paper. By means of constructing effective equivalent input circuit structure of the preamplifier, two capacitors of 5 pF are included to realize the DC suppression compared to conventional preamplifiers. Then this preamplifier is designed and simulated using the standard 0.6 mu m MOS process technology model parameters with a supply voltage of 5 volts. With differential input structures adopted, simulation results of the preamplifier show that the input impedance amounts to more than 2 Gohm with brain neural signal frequency of 0.5 Hz-100 Hz. The equivalent input noise voltage is 18 nV/Hz(1/2). The common mode rejection ratio (CMRR) of 112 dB and the open-loop differential gain of 90 dB are achieved.

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A simple analog circuit designer has been implemented as a rule based system. The system can design voltage followers. Miller integrators, and bootstrap ramp generators from functional descriptions of what these circuits do. While the designer works in a simple domain where all components are ideal, it demonstrates the abilities of skilled designers. While the domain is electronics, the design ideas are useful in many other engineering domains, such as mechanical engineering, chemical engineering, and numerical programming. Most circuit design systems are given the circuit schematic and use arithmetic constraints to select component values. This circuit designer is different because it designs the schematic. The designer uses a unidirectional CONTROL relation to find the schematic. The circuit designs are built around this relation; it restricts the search space, assigns purposes to components and finds design bugs.

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This paper considers the importance of using a top-down methodology and suitable CAD tools in the development of electronic circuits. The paper presents an evaluation of the methodology used in a computational tool created to support the synthesis of digital to analog converter models by translating between different tools used in a wide variety of applications. This tool is named MS 2SV and works directly with the following two commercial tools: MATLAB/Simulink and SystemVision. Model translation of an electronic circuit is achieved by translating a mixed-signal block diagram developed in Simulink into a lower level of abstraction in VHDL-AMS and the simulation project support structure in SystemVision. The method validation was performed by analyzing the power spectral of the signal obtained by the discrete Fourier transform of a digital to analog converter simulation model. © 2011 IEEE.

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This thesis starts showing the main characteristics and application fields of the AlGaN/GaN HEMT technology, focusing on reliability aspects essentially due to the presence of low frequency dispersive phenomena which limit in several ways the microwave performance of this kind of devices. Based on an equivalent voltage approach, a new low frequency device model is presented where the dynamic nonlinearity of the trapping effect is taken into account for the first time allowing considerable improvements in the prediction of very important quantities for the design of power amplifier such as power added efficiency, dissipated power and internal device temperature. An innovative and low-cost measurement setup for the characterization of the device under low-frequency large-amplitude sinusoidal excitation is also presented. This setup allows the identification of the new low frequency model through suitable procedures explained in detail. In this thesis a new non-invasive empirical method for compact electrothermal modeling and thermal resistance extraction is also described. The new contribution of the proposed approach concerns the non linear dependence of the channel temperature on the dissipated power. This is very important for GaN devices since they are capable of operating at relatively high temperatures with high power densities and the dependence of the thermal resistance on the temperature is quite relevant. Finally a novel method for the device thermal simulation is investigated: based on the analytical solution of the tree-dimensional heat equation, a Visual Basic program has been developed to estimate, in real time, the temperature distribution on the hottest surface of planar multilayer structures. The developed solver is particularly useful for peak temperature estimation at the design stage when critical decisions about circuit design and packaging have to be made. It facilitates the layout optimization and reliability improvement, allowing the correct choice of the device geometry and configuration to achieve the best possible thermal performance.

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Since the memristor was first built in 2008 at HP Labs, no end of devices and models have been presented. Also, new applications appear frequently. However, the integration of the device at the circuit level is not straightforward, because available models are still immature and/or suppose high computational loads, making their simulation long and cumbersome. This study assists circuit/systems designers in the integration of memristors in their applications, while aiding model developers in the validation of their proposals. We introduce the use of a memristor application framework to support the work of both the model developer and the circuit designer. First, the framework includes a library with the best-known memristor models, being easily extensible with upcoming models. Systematic modifications have been applied to these models to provide better convergence and significant simulations speedups. Second, a quick device simulator allows the study of the response of the models under different scenarios, helping the designer with the stimuli and operation time selection. Third, fine tuning of the device including parameters variations and threshold determination is also supported. Finally, SPICE/Spectre subcircuit generation is provided to ease the integration of the devices in application circuits. The framework provides the designer with total control overconvergence, computational load, and the evolution of system variables, overcoming usual problems in the integration of memristive devices.

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Bibliography: p. 47.

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Thesis (M.S.)--University of Illinois.