Broadband high-gain optical parametric chirped-pulse amplification near 780 nm with LBO-I near-degenerate near-collinear phase match

Near-degenerative near-collinear phase-match geometry for broadband optical parametric chirped-pulse amplification (OPCPA) at approximate to 780 nm is calculated in comparison with nondegenerate noncollinear phase-match geometry. In an experiment on LBO-I near-degenerate near-collinear OPCPA, high gain with broad gain bandwidth (approximate to 71 nm, FWHM) at approximate to 780 nm is achieved by using an approximate to 390-nm pumping pulse. The stretched broadband chirped signal pulse near 780 nm is amplified to approximate to 412 mu J with a pumping energy of approximate to 15 mJ, and the total gain is > 3.7 X 10(6), which agrees well with the calculation. For a broadband (covering approximate to 100 nm) chirped signal pulse, the theoretical gain bandwidth has been attained experimentally for the first time. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Broadband high-gain optical parametric chirped-pulse amplification near 780 nm with LBO-I near-degenerate near-collinear phase match

Near-degenerative near-collinear phase-match geometry for broadband optical parametric chirped-pulse amplification (OPCPA) at approximate to 780 nm is calculated in comparison with nondegenerate noncollinear phase-match geometry. In an experiment on LBO-I near-degenerate near-collinear OPCPA, high gain with broad gain bandwidth (approximate to 71 nm, FWHM) at approximate to 780 nm is achieved by using an approximate to 390-nm pumping pulse. The stretched broadband chirped signal pulse near 780 nm is amplified to approximate to 412 mu J with a pumping energy of approximate to 15 mJ, and the total gain is > 3.7 X 10(6), which agrees well with the calculation. For a broadband (covering approximate to 100 nm) chirped signal pulse, the theoretical gain bandwidth has been attained experimentally for the first time. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

A high-gain high-linearity wide-band low noise amplifier for terrestrial and cable receptions

This paper presents the design of a wide-band low-noise amplifier (LNA) implemented in a 0.35 mu m SiGe BiCMOS technology for cable (DVB-C) and terrestrial (DVB-T) tuner applications. The LNA utilizes current injection to achieve high linearity. Without using inductors, the LNA achieves 0.1-1GHz wide bandwidth and 18.8-dB gain with less than 1.4-dB gain variation. The noise figure(NF) of the wideband LNA is 5dB, its 1-dB compression point is -2dBm and IIP3 is 8dBm. The LNA dissipates 120mW power with a 5-V supply.

A high gain aluminium electron multiplier

A twenty stage electron multiplier using aluminium as dynode material is described. When operated in DC mode, very stable gains approaching 106 were obtained with input currents of the order of 10-12 A, even after repeated exposures to the atmospheres.

A High‐Gain Audiofrequency Amplifier

The design of a three‐stage high‐gain amplifier for laboratory use in audiofrequency investigations is described. Four‐electrode tubes are used as screen‐grid amplifiers and an amplification of the order of 200 per stage is obtained. The inaccuracy of McDonald's formula for calculation of stage‐gain has been pointed out. The gain‐frequency characteristics are given for power as well as voltage amplification. It is shown that extreme care is necessary in the design of shielding to obtain high‐voltage amplification of the order of 120 decibels as obtained in this three‐stage amplifier.

Compact 120 TW Ti: sapphire laser system with a high gain final amplifier

A 120TW/36fs laser system based on Ti:sapphire chirped-pulse amplification (CPA) has been successfully established in our lab. The final four pass Ti:sapphire amplifier pumped by an energetic single-shot Nd:YAG-Nd:glass laser was designed and optimized. With 24J/8ns pump energy at 532 nm, 300 mJ/220 ps chirped pulse was amplified to 5.98 J in this amplifier, and a total saturated gain of similar to 20 was achieved. The focused intensity of compressed beam could reach to 10(20) W/cm(2) with the M-2 of similar to 2.0. (c) 2005 Elsevier Ltd. All rights reserved.

Parasitic lasing suppression in high gain femtosecond petawatt Ti: sapphire amplifier

New parasitic lasing suppression techniques are developed and high gain amplification is demonstrated in a petawatt level Ti:sapphire amplifier based on the chirped pulse amplification (CPA) scheme. Cladding the large aperture Ti: sapphire with refractive-index matched liquid doped with absorber suppresses the transverse lasing. The acousto-optic programmable dispersive filter (AOPDF) is used to realize side-lobe suppression in the temporal profile of the compressed pulse. The 800 nm laser output with peak power of 0.89 PW and pulse width of 29.0 fs is demonstrated. (c) 2007 Optical Society of America.

Role of a high gain of the medium in superradiance generation and in observation of coherent effects in semiconductor lasers

A theoretical model of superradiant pulse generation in semiconductor laser structures is developed. It is shown that a high optical gain of the medium can overcome phase relaxation and results in a built-up superradiant state (macroscopic dipole) in an assembly of electron - hole pairs on a time scale much longer than the characteristic polarisation relaxation time T2. A criterion of the superradiance generation is the condition acmT2 > 1, where α is the gain coefficient and cm is the speed of light in the medium. The theoretical model describes both qualitatively and quantitatively the author's own experimental results.

NUMERICAL ANALYSIS OF A NOVEL 980nm MICROCAVITY SEMICONDUCTOR OPTICAL AMPLIFIER WITH HIGH GAIN AND LOW NOISE

A novel microcavity semiconductor optical amplifier ( MCSOA) was proposed by incorporating top and bottom distributed Bragg reflectors ( DBRs) into the waveguide structure of conventional traveling-wave semiconductor optical amplifiers(TW-SOAs). The incoming( outgoing) light beam incidented onto (escaped from) the waveguide structure at a oblique angle through two optical windows, where the top DBR was etched away, and anti-reflection coating was deposited. The light beams inside the optical cavity were reflected repeatedly between two DBRs and propagated along waveguide in a zigzag optical path. The performance of the MCSOA was systematically investigated by extensive numerical simulation based on a traveling-wave model by taking into account the comprehensive effects of DBRs on both the amplification of signals and the filtering of spontaneous emission( SE). Our results show that the MCSOA is capable of achieving a fiber-to-fiber gain as high as 40dB and a low noise figure is less than 3.5dB.

Distortion management of SBS slow light in a single-mode optical fiber by optimization of broadband SBS gain spectrum

SPIE

High gain in hybrid transistors with BAlq(3)/Alq(3) isotype heterostructure emitter

We report the fabrication of permeable metal-base transistors based on bis(2-methyl-8-quinolinolato-N1,O8)-(1,1'-biphenyl-4-olato) aluminum (BAlq(3))/tri(8-hydroxyquinoline) aluminum (Alq(3)) isotype heterostructure as emitter layer. In this transistor, n-Si was used as the collector, LiF/Al as the emitter electrode, and Au/Al bilayer metal as the base. We show that the leakage current is greatly reduced in Al/n-Si/Au/Al/BAlq(3)/Alq(3)/LiF/Al devices with respect to Al/n-Si/Au/Al/Alq(3)/LiF/Al devices due to the utilization of BAlq(3)/Alq(3) isotype heterostructure emitter, leading to high common-base and common-emitter current gains at low driving voltages.

High gain in hybrid transistors with vanadium oxide/tris(8-hydroxyquinoline) aluminum emitter

We report the electrical characterization of hybrid permeable-base transistors with tris(8-hydroxyquinoline) aluminum as emitter layer. These transistors were constructed presenting an Al/n-Si/Au/Alq(3)/V2O5/Al structure. We investigate the influence of the V2O5 layer thickness and demonstrate that these devices present high common-base and common-emitter current gain, and can be operated at very low driving voltages, lower than 1 V, in both, common-base and common-emitter modes.