High gain in hybrid transistors with BAlq(3)/Alq(3) isotype heterostructure emitter
Data(s) |
2008
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Resumo |
We report the fabrication of permeable metal-base transistors based on bis(2-methyl-8-quinolinolato-N1,O8)-(1,1'-biphenyl-4-olato) aluminum (BAlq(3))/tri(8-hydroxyquinoline) aluminum (Alq(3)) isotype heterostructure as emitter layer. In this transistor, n-Si was used as the collector, LiF/Al as the emitter electrode, and Au/Al bilayer metal as the base. We show that the leakage current is greatly reduced in Al/n-Si/Au/Al/BAlq(3)/Alq(3)/LiF/Al devices with respect to Al/n-Si/Au/Al/Alq(3)/LiF/Al devices due to the utilization of BAlq(3)/Alq(3) isotype heterostructure emitter, leading to high common-base and common-emitter current gains at low driving voltages. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Yi MD;Huang JY;Ma DG;Hummelgen IA.High gain in hybrid transistors with BAlq(3)/Alq(3) isotype heterostructure emitter,APPLIED PHYSICS LETTERS,2008,92(24):文献编号:243312 |
Palavras-Chave | #STATIC INDUCTION TRANSISTOR #ARCHITECTURE #FILMS |
Tipo |
期刊论文 |