Energy of bond defects in quantum spin chains obtained from local approximations and from exact diagonalization

We study the influence of ferromagnetic and antiferromagnetic bond defects on the ground-state energy of antiferromagnetic spin chains. In the absence of translational invariance, the energy spectrum of the full Hamiltonian is obtained numerically, by an iterative modi. cation of the power algorithm. In parallel, approximate analytical energies are obtained from a local-bond approximation, proposed here. This approximation results in significant improvement upon the mean-field approximation, at negligible extra computational effort. (C) 2008 Published by Elsevier B.V.

Hydrogen-decorated lattice defects in proton implanted GaN

Several vibrational bands were observed near 3100 cm(-1) in GaN that had been implanted with hydrogen at room temperature and subsequently annealed, Our results indicate that these bands are due to nitrogen-dangling-bond defects created by the implantation that an decorated by hydrogen, The frequencies are close to those predicted recently for V-Ga-H-n complexes, leading us to tentatively assign the new lines to V-Ga defects decorated with different numbers of H atoms. (C) 1998 American Institute of Physics. [S0003-6951(98)03614-6].

Effective cutting of a quantum spin chain by bond impurities

Spin chains are promising media for short-haul quantum communication. Their usefulness is manifested in all those situations where stationary information carriers are involved. In the majority of the communication schemes relying on quantum spin chains, the latter are assumed to be finite in length, with well-addressable end-chain spins. In this paper we propose that such a configuration could actually be achieved by a mechanism that is able to effectively cut a spin ring through the insertion of bond defects. We then show how suitable physical quantities can be identified as figures of merit for the effectiveness of the cut. We find that, even for modest strengths of the bond defect, a ring is effectively cut at the defect site. In turn, this has important effects on the amount of correlations shared by the spins across the resulting chain, which we study by means of a scattering-based mechanism of a clear physical interpretation. © 2013 American Physical Society.

Effets de la concentration des défauts sur la surface d'énergie potentielle du silicium amorphe

Mémoire numérisé par la Division de la gestion de documents et des archives de l'Université de Montréal

É́tude sur la cinétique des défauts structuraux dans le silicium amorphe.

Cette thèse présente à la fois des résultats de simulations numériques en plus de ré- sultats expérimentaux obtenus en laboratoire sur le rôle joué par les défauts de structure dans le silicium amorphe. Nos travaux de simulation numérique furent réalisés avec une nouvelle méthode de simulation Monte-Carlo cinétique pour décrire l’évolution tempo- relle de modèles de silicium amorphe endommagés sur plusieurs échelles de temps jus- qu’à une seconde à la température pièce. Ces simulations montrent que les lacunes dans le silicium amorphe sont instables et ne diffusent pas sans être détruites. Nous montrons également que l’évolution d’un modèle de silicium amorphe endommagé par une colli- sion ionique lors d’un recuit peut être divisée en deux phases : la première est dominée exclusivement par la diffusion et la création/destruction de défauts de liaison, alors que la deuxième voit les créations/destructions de liens remplacées par des échanges de liens entre atomes parfaitement coordonnés. Les défauts ont aussi un effet sur la viscosité du silicium amorphe. Afin d’approfondir cette question, nous avons mesuré la viscosité du silicium amorphe et du silicium amorphe hydrogéné sous l’effet d’un faisceau d’ions. Nous montrons que la variation de la viscosité dans les deux matériaux est différente : le silicium amorphe hydrogéné a une viscosité constante en fonction de la fluence des ions alors que le silicium amorphe pur a une viscosité qui augmente de façon linéaire. Pour de faibles fluences, la viscosité du silicium hydrogéné est plus grande que la viscosité sans hydrogène. La présence d’hydrogène diminue également l’amplitude de la variation logarithmique de la contrainte observée lors de la relaxation à la température de la pièce.

Effect of defects on fracture strength of graphene sheets

With a hexagonal monolayer network of carbon atoms, graphene has demonstrated exceptional electrical 22 and mechanical properties. In this work, the fracture of graphene sheets with Stone–Wales type defects and vacancies were investigated using molecular dynamics simulations at different temperatures. The initiation of defects via bond rotation was also investigated. The results indicate that the defects and vacancies can cause significant strength loss in graphene. The fracture strength of graphene is also affected by temperature and loading directions. The simulation results were compared with the prediction from the quantized fracture mechanics.

Chemical bond approach to determining conductivity band gaps in amorphous chalcogenides and pnictides

The minimum energy required for the formation of conjugate pair of charged defects is found to be approximately equal to the experimental activation energy for d.c. conductivity in a number of amorphous chalcoganides and pnictides. This observation implies that the defect pair formation energy represents an intrinsic gap for transport in amorphous chalcogenides.

Evaluation of kissing bond in composite adhesive lap joints using digital image correlation: Preliminary studies

The assembly of aerospace and automotive structures in recent years is increasingly carried out using adhesives. Adhesive joints have advantages of uniform stress distribution and less stress concentration in the bonded region. Nevertheless, they may suffer due to the presence of defects in bond line and at the interface or due to improper curing process. While defects like voids, cracks and delaminations present in the adhesive bond line may be detected using different NDE methods, interfacial defects in the form of kissing bond may go undetected. Attempts using advanced ultrasonic methods like nonlinear ultrasound and guided wave inspection to detect kissing bond have met with limited success stressing the need for alternate methods. This paper concerns the preliminary studies carried out on detectability of dry contact kissing bonds in adhesive joints using the Digital Image Correlation (DIC) technique. In this attempt, adhesive joint samples containing varied area of kissing bond were prepared using the glass fiber reinforced composite (GFRP) as substrates and epoxy resin as the adhesive layer joining them. The samples were also subjected to conventional and high power ultrasonic inspection. Further, these samples were loaded till failure to determine the bond strength during which digital images were recorded and analyzed using the DIC method. This noncontact method could indicate the existence of kissing bonds at less than 50% failure load. Finite element studies carried out showed a similar trend. Results obtained from these preliminary studies are encouraging and further tests need to be done on a larger set of samples to study experimental uncertainties and scatter associated with the method. (C) 2013 Elsevier Ltd. All rights reserved.

Theory of defects in amorphous semiconductors

We review the electronic structure of defects in aSi:H, aGaAs and aSi3N4, emphasising in aSi:H the doping mechanism, the evidence that its dangling bond defect has a small electron-lattice coupling and a positive correlation energy, and possible atomic mechanisms for the Staebler-Wronski effect. © 1985.

AN ANALYSIS OF CHARGE STATES FOR LOCAL VIBRATIONAL-MODES BY OXYGEN DEFECTS IN SEMI-INSULATING GAAS

The high-resolution spectral measurements for new local vibrational modes near 714 cm-1 due to the oxygen defect in semi-insulating GaAs are analyzed on the basis of a model calculation by self-consistent bond orbital approach. Two charge states of oxygen atom with 1 and 2 extra electrons are assigned to be responsible for these local modes. The observed frequencies are explained by the properties of Ga-O-1 and Ga-O-2 bonds and the calculated cohesive energy indicates that the O-2 state is stable. The results are in good agreement with the kinetic analysis.

General rules for predicting where a catalytic reaction should occur on metal surfaces: A density functional theory study of C-H and C-O bond breaking/making on flat, stepped, and kinked metal surfaces

To predict where a catalytic reaction should occur is a fundamental issue scientifically. Technologically, it is also important because it can facilitate the catalyst's design. However, to date, the understanding of this issue is rather limited. In this work, two types of reactions, CH4 CH3 + H and CO C + 0 on two transition metal surfaces, were chosen as model systems aiming to address in general where a catalytic reaction should occur. The dissociations of CH4 - CH3 + H and CO --> C + O and their reverse reactions on flat, stepped, and kinked Rh and Pd surfaces were studied in detail. We find the following: First, for the CH4 Ch(3) + H reaction, the dissociation barrier is reduced by similar to0.3 eV on steps and kinks as compared to that on flat surfaces. On the other hand, there is essentially no difference in barrier for the association reaction of CH3 + H on the flat surfaces and the defects. Second, for the CO C + 0 reaction, the dissociation barrier decreases dramatically (more than 0.8 eV on Rh and Pd) on steps and kinks as compared to that on flat surfaces. In contrast to the CH3 + H reaction, the C + 0 association reaction also preferentially occurs on steps and kinks. We also present a detailed analysis of the reaction barriers in which each barrier is decomposed quantitatively into a local electronic effect and a geometrical effect. Our DFT calculations show that surface defects such as steps and kinks can largely facilitate bond breaking, while whether the surface defects could promote bond formation depends on the individual reaction as well as the particular metal. The physical origin of these trends is identified and discussed. On the basis of our results, we arrive at some simple rules with respect to where a reaction should occur: (i) defects such as steps are always favored for dissociation reactions as compared to flat surfaces; and (ii) the reaction site of the association reactions is largely related to the magnitude of the bonding competition effect, which is determined by the reactant and metal valency. Reactions with high valency reactants are more likely to occur on defects (more structure-sensitive), as compared to reactions with low valency reactants. Moreover, the reactions on late transition metals are more likely to proceed on defects than those on the early transition metals.

Electronic properties of interfaces and defects from many-body perturbation theory: Recent developments and applications

We review some recent developments in many body perturbation theory (MBPT) calculations that have enabled the study of interfaces and defects. Starting from the theoretical basis of MBPT, Hedin's equations are presented, leading to the CW and CWI' approximations. We introduce the perturbative approach, that is the one most commonly used for obtaining quasiparticle (QP) energies. The practical strategy presented for dealing with the frequency dependence of the self energy operator is based on either plasmon-pole models (PPM) or the contour deformation technique, with the latter being more accurate. We also discuss the extrapolar method for reducing the number of unoccupied states which need to be included explicity in the calculations. The use of the PAW method in the framework of MBPT is also described. Finally, results which have been obtained using, MBPT for band offsets a interfaces and for defects presented, with companies on the main difficulties and cancels.

Schematic representation of the QP corrections (marked with ) to the band edges (E and E-v) and a defect level (F) for a Si/SiO2 interface (Si and O atoms are represented in blue and red, respectively, in the ball and stick model) with an oxygen vacancy leading to a Si-Si bond (the Si atoms involved in this bond are colored light blue).

Influence of Insertion Techniques for Resin Cement and Mechanical Cycling on the Bond Strength Between Fiber Posts and Root Dentin

Purpose: To evaluate the effect of the insertion technique for resin cement and mechanical cycling on the bond strength between fiber posts and root dentin.Materials and Methods: Sixty-four single-rooted bovine teeth were endodontically prepared to receive glass-fiber posts. The insertion of cement into the root canal was performed using one of the following techniques: POS, insertion with the post; LEN, the use of a lentulo-type drill; EXP, insertion with a straight-tip explorer; or CEN, the use of a Centrix syringe. Half of the specimens were mechanically cycled. All specimens were sectioned into slices of 1.8 mm for the push-out test and 0.5 mm for analysis of the cement layer quality.Results: The insertion technique affected the interaction between factors (bond strength and mechanical cycling; p < 0.0001). Insertion of the Centrix syringe after mechanical cycling showed the highest bond values (13.6 +/- 3.2 MPa). Group-to-group comparisons for baseline and cycled conditions indicated that mechanical cycling significantly influenced the bond strength (p < 0.0001) of the POS and CEN groups. The quality of the cement layer did not differ between the techniques when evaluated in the middle (p = 0.0612) and cervical (p = 0.1119) regions, but did differ in the apical region (p = 0.0097), where the CEN group had better layer quality for the two conditions tested (baseline and cycled).Conclusion: The use of the Centrix syringe improved the homogeneity of the cement layer, reducing the defects in the layer and increasing adhesive strength values to dentin, even after mechanical cycling.

First-Principles Study of the Electronic and Magnetic Properties of Defects in Carbon Nanostructures

Understanding the magnetic properties of graphenic nanostructures is instrumental in future spintronics applications. These magnetic properties are known to depend crucially on the presence of defects. Here we review our recent theoretical studies using density functional calculations on two types of defects in carbon nanostructures: Substitutional doping with transition metals, and sp$^3$-type defects created by covalent functionalization with organic and inorganic molecules. We focus on such defects because they can be used to create and control magnetism in graphene-based materials. Our main results are summarized as follows: i)Substitutional metal impurities are fully understood using a model based on the hybridization between the $d$ states of the metal atom and the defect levels associated with an unreconstructed D$_{3h}$ carbon vacancy. We identify three different regimes, associated with the occupation of distinct hybridization levels, which determine the magnetic properties obtained with this type of doping; ii) A spin moment of 1.0 $\mu_B$ is always induced by chemical functionalization when a molecule chemisorbs on a graphene layer via a single C-C (or other weakly polar) covalent bond. The magnetic coupling between adsorbates shows a key dependence on the sublattice adsorption site. This effect is similar to that of H adsorption, however, with universal character; iii) The spin moment of substitutional metal impurities can be controlled using strain. In particular, we show that although Ni substitutionals are non-magnetic in flat and unstrained graphene, the magnetism of these defects can be activated by applying either uniaxial strain or curvature to the graphene layer. All these results provide key information about formation and control of defect-induced magnetism in graphene and related materials.