Bottom water properties observed during Nathanial B. Palmer cruises NBP00-08 and NBP04-08 to the Southern Ocean

We report on observations of dense shelf water overflows and Antarctic Bottom Water (AABW) formation along the continental margin of the Adelie and George V Land coast between 140°E and 149°E. Vertical sections and bottom layer water mass properties sampled during two RVIB Nathaniel B Palmer hydrographic surveys (NBP00-08, December 2000/January 2001 and NBP04-08, October 2004) describe the spreading of cold, dense shelf water on the continental slope and rise from two independent source regions. The primary source region is the Adelie Depression, exporting high-salinity dense shelf water through the Adelie Sill at 143°E. An additional eastern source region of lower-salinity dense shelf water from the Mertz Depression is identified for the first time from bottom layer properties northwest of the Mertz Sill and Mertz Bank (146°E-148°E) that extend as far as the Buffon Channel (144.75°E) in summer. Regional analysis of satellite-derived ice production estimates over the entire region from 1992 to 2005 suggests that up to 40% of the total ice production for the region occurs over the Mertz Depression and therefore this area is likely to make a significant contribution to the total dense shelf water export. Concurrent time series from bottom-mounted Microcats and ADCP instruments from the Mertz Polynya Experiment (April 1998 to May 1999) near the Adelie Sill and on the upper continental slope (1150 m) and lower continental rise (3250 m) to the north describe the seasonal variability in downslope events and their interaction with the ambient water masses. The critical density for shelf water to produce AABW is examined and found to be 27.85 kg/m**3 from the Adelie Depression and as low as 27.80 kg/m**3 from the Mertz Depression. This study suggests previous dense shelf water export estimates based on the flow through the Adelie Sill alone are conservative and that other regions around East Antarctica with similar ice production to the Mertz Depression could be contributing to the total AABW in the Australian-Antarctic Basin.

Retinal nerve fibre layer thickness is associated with higher risk of foot ulceration in diabetic peripheral neuropathy

Purpose To evaluate the association between retinal nerve fibre layer (RNFL) thickness and diabetic peripheral neuropathy in people with type 2 diabetes, and specifically those at higher risk of foot ulceration. Methods RNFL thicknesses was measured globally and in four quadrants (temporal, superior, nasal and inferior) at 3.45 mm diameter around the optic nerve head using optical coherence tomography (OCT). Severity of neuropathy was assessed using the Neuropathy Disability Score (NDS). Eighty-two participants with type 2 diabetes were stratified according to NDS scores (0-10) as: none, mild, moderate, and severe neuropathy. A control group was additionally included (n=17). Individuals with NDS≥ 6 (moderate and severe neuropathy) have been shown to be at higher risk of foot ulceration. A linear regression model was used to determine the association between RNFL and severity of neuropathy. Age, disease duration and diabetic retinopathy levels were fitted in the models. Independent t-test was employed for comparison between controls and the group without neuropathy, as well as for comparison between groups with higher and lower risk of foot ulceration. Analysis of variance was used to compare across all NDS groups. Results RNFL thickness was significantly associated with NDS in the inferior quadrant (b= -1.46, p=0.03). RNFL thicknesses globally and in superior, temporal and nasal quadrants did not show significant associations with NDS (all p>0.51). These findings were independent of the effect of age, disease duration and retinopathy. RNFL was thinner for the group with NDS ≥ 6 in all quadrants but was significant only inferiorly (p<0.005). RNFL for control participants was not significantly different from the group with diabetes and no neuropathy (superior p=0.07, global and all other quadrants: p>0.23). Mean RNFL thickness was not significantly different between the four NDS groups globally and in all quadrants (p=0.08 for inferior, P>0.14 for all other comparisons). Conclusions Retinal nerve fibre layer thinning is associated with neuropathy in people with type 2 diabetes. This relationship is strongest in the inferior retina and in individuals at higher risk of foot ulceration.

Macular retinal layer thickness in childhood

Purpose To examine macular retinal thickness and retinal layer thickness with spectral domain optical coherence tomography (OCT) in a population of children with normal ocular health and minimal refractive errors. Methods High resolution macular OCT scans from 196 children aged from 4 to 12 years (mean age 8 ± 2 years) were analysed to determine total retinal thickness and the thickness of 6 different retinal layers across the central 5 mm of the posterior pole. Automated segmentation with manual correction was used to derive retinal thickness values. Results The mean total retinal thickness in the central 1 mm foveal zone was 255 ± 16 μm, and this increased significantly with age (mean increase of 1.8 microns per year) in childhood (p<0.001). Age-related increases in thickness of some retinal layers were also observed, with changes of highest statistical significance found in the outer retinal layers in the central foveal region (p<0.01). Significant topographical variations in thickness of each of the retinal layers were also observed (p<0.001). Conclusions Small magnitude, statistically significant increases in total retinal thickness and retinal layer thickness occur from early childhood to adolescence. The most prominent changes appear to occur in the outer retinal layers of the central fovea.

Mapping bound plasmon propagation on a nanoscale stripe waveguide using quantum dots: Influence of spacer layer thickness

In this paper we image the highly confined long range plasmons of a nanoscale metal stripe waveguide using quantum emitters. Plasmons were excited using a highly focused 633 nm laser beam and a specially designed grating structure to provide stronger incoupling to the desired mode. A homogeneous thin layer of quantum dots was used to image the near field intensity of the propagating plasmons on the waveguide. We observed that the photoluminescence is quenched when the QD to metal surface distance is less than 10 nm. The optimised spacer layer thickness for the stripe waveguides was found to be around 20 nm. Authors believe that the findings of this paper prove beneficial for the development of plasmonic devices utilising stripe waveguides.

The influence of Zr layer thickness on contact deformation and fracture in a ZrN-Zr multilayer coating

In order to understand the influence of ductile metal interlayer on the overall deformation behavior of metal/nitride multilayer, different configurations of metal and nitride layers were deposited and tested under indentation loading. To provide insight into the trends in deformation with multilayer spacings, an FEM model with elastic-perfect plastic metal layers alternate with an elastic nitride on top of an elastic-plastic substrate. The strong strain mismatch between the metal and nitride layers significantly alters the stress field under contact loading leading to micro-cracking in the nitride, large tensile stresses immediately below the contact, and a transition from columnar sliding in thin metal films to a more uniform bending and microcracking in thicker coatings.

Finite element analysis on stresses field of normalized layer thickness within ceramic coating on aluminized steel

Multilayer ceramic coatings were fabricated on steel substrate using a combined technique of hot dipping aluminum(HDA) and plasma electrolytic oxidation(PEO). A triangle of normalized layer thickness was created for describing thickness ratios of HDA/PEO coatings. Then, the effect of thickness ratio on stresses field of HDA/PEO coatings subjected to uniform normal contact load was investigated by finite element method. Results show that the surface tensile stress is mainly affected by the thickness ratio of Al layer when the total thickness of coating is unchanged. With the increase of A] layer thickness, the surface tensile stress rises quickly. When Al2O3 layer thickness increases, surface tensile stress is diminished. 'Meanwhile, the maximum shear stress moves rapidly towards internal part of HDA/PEO coatings. Shear stress at the Al2O3/Al interface is minimal when Al2O3 layer and Al layer have the same thickness.

Influence of buffer layer thickness on the structure and optical properties of ZnO thin films

A series of ZnO thin films were deposited on ZnO buffer layers by DC reactive magnetron sputtering. The buffer layer thickness determination of microstructure and optical properties of ZnO films was investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. XRD results revealed that the stress of ZnO thin films varied with the buffer layer thickness. With the increase of buffer layer thickness, the band gap edge shifted toward longer wavelength. The near-band-edge (NBE) emission intensity of ZnO films deposited on ZnO buffer layer also varied with the increase of thickness due to the spatial confinement increasing the Coulomb interaction between electrons and holes. The PL measurement showed that the optimum thickness of the ZnO buffer layer was around 12 nm. (c) 2005 Elsevier B.V. All rights reserved.

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors

We investigated the influence of thickness of p-GaN layer on the performance of p-i-n structure GaN ultraviolet photodetector. Through the simulation calculation, it was found that both the quantum efficiency and dark current of device decrease when employing thicker p-GaN layer, while both the quantum efficiency and dark current increase with decreasing thickness of p-GaN layer. It is suggested that the Schottky contact junction between the metal and p-GaN may be responsible for the incompatible effect. We has to make a suitable choice of the thickness of p-GaN in the device design according to the application requirement.