Activity of TiO2 in the System ZrO2-TiO2 and Gibbs Energy of Formation of ZrTiO4

The activity of Ti02 in single and two··phase regions of ihe system ZrOrTi02 has heen measured lIsing solid state cells based on yttria··doped tho ria (YDT) as the solid electrolyte at 1373 K. The cells used can be represented as: Pt, Tio.07PtO.Y3 + Zrj.,Tix0 2 / YDT / Ti02 + Tio.07Pto.93, Pt Pt, Tio.07Pto.93 + ZrJ.xTix02 + ZrTi04 / YDT / Ti02+ Tio.07PtO.93, Pt In each cell the composition of Pt-Ti alloy was identical at hoth electrodes. The emf of the cell is therefore directly related to the activity of Ti02 in oxide phase or oxide phase mixture: aTiO~ :;: cxp (-4FE/RT). The activity coefficient of Ti02 in th~ zirconia-rich solid solution with monoclinic structure (CUl2 2" XTi02 2" 0) can be expressed as:In the zirconia-rich solid solution with tetragonal structure (0.085 2" X ri02 2" 0.03), the activity coefficient is given by:In YTi02 (± 0.012) = 2.354 (1-XTiO? )2 +0.064 The standard Gibbs energy of formation of ZrTi04 is -5650 (± 200) J/mol at 1373 K .

Photo luminescence: A probe for short, medium and long-range self-organization order in ZrTiO4 oxide

Photoluminescent disordered ZrTiO4 powders were obtained by the polymeric precursor soft-chemical method. This oxide system (ordered and disordered) was characterized by photoluminescence, Raman spectroscopy, X-ray diffraction, differential scanning calorimetry and UV vis absorption experiments. The UV absorption tail formation in the disordered oxides was related to the diminution of optical band gap. In the disordered phase, this oxide displayed broad band photoluminescence caused by change in coordination number of titanium and zirconium with oxygen atoms. The gap decreased from 3.09 eV in crystalline oxide to 2.16 eV in disordered oxide. The crystalline oxide presented an orthorhombic alpha-PbO2-type structure in which Zr4+ and Ti4+ were randomly distributed in octahedral coordination polyhedra with oxygen atoms. The amorphous-crystalline transition occurred at almost 700 degrees C, at which point the photoluminescence vanished. The Raman peak at close to 80-200 cm(-1) indicated the presence of locally ordered Ti-O-n and Zr-O-n polyhedra in disordered photoluminescent oxides. (c) 2006 Elsevier B.V. All rights reserved.

Synthesis by the polymeric precursor method and characterization of undoped and Sn, Cr and V-doped ZrTiO4

In this work, zirconium titanate doped with 0. 1, 0.2, and 0.4 mole% of tin, chromium and vanadium was synthesized by the polymeric precursors method and characterized by thermal analysis (TG/DTA), X-ray diffraction (XRD), nitrogen adsorption and scanning electronic microscopy (SEM). The powder presented two mass losses attributed to the exit of water and to the pyrolysis of the organic material. The surface area reduction observed from 500 degrees C indicates the beginning of the sintering process. All the dopants led to changes in the lattice parameters and to the decrease of both crystallite size and particle size. (c) 2005 Elsevier B.V. All rights reserved.

Hydrazine carboxylate precursors to fine particle titania, zirconia and zirconium titanate

Titanyl hydrazine carboxylate dihydrate, TiO(N2H3COO)2.2H2O, zirconyl hydrazine carboxylate dihydrate, ZrO(N2H3COO)2.2H2O and their solid solution, ZrTiO2(N2H3COO)4.4H2O have been prepared for the first time and investigated as precursors to fine particle TiO2, ZrO2 and ZrTiO4 respectively. Titania(anatase) formed has a very high surface area of 110 m2/g and zirconium titanate showed very low dielectric loss (4 x 10(-4)).

MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

Effect of titania addition on yttria-stabilised tetragonal zirconia ceramics sintered at high temperatures

In order to combine the mechanical properties of yttria-stabilised zirconia (ZrO2-3 mol% Y2O3; code Y-ZrO2) with the bioactivity of titania (TiO2), Y-ZrO2-TiO2, green compacts with 0-40vol.% TiO2 were sintered at 1300, 1400, and 1500degreesC for 4h, respectively. The microstructural features such as grains, pores, and phases were examined using scanning electron microscopy (SEM), X-ray diffraction (XRD), and energy dispersive spectroscopy (EDX). The mechanical properties such as hardness and toughness were also determined using the methods of Vickers indentation and Knoop indentation. All the composites showed the major tetragonal Y-ZrO2 phase regardless of the content of the added TiO2. However, rutile TiO2 phase was obtained at 1300degreesC, whereas zirconium titanate (ZrTi04) phase was found at 1400 and 1500degreesC. The Y-ZrO2-ZrTiO4 Composites sintered at 1500degreesC showed relatively high hardness (860-1000 kg/mm(2)) and toughness (4.0-4.5 MPa m(0.5)), whereas the Y-ZrO2-TiO2 composites sintered at 1300degreesC had slightly lower hardness (720-950kg/mm(2)) and fracture toughness (3.1-3.3 MPa m(0.5)). (C) 2004 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Analysis of Ca-PZT powder obtained by the Pechini and partial oxalate methods

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Synthesis and characterization of PLZT (9/65/35) by the Pechini method and partial oxalate

ZrTiO4 (ZT), obtained by the Pechini method, was used as precursor for obtaining PLZT (lead lanthanum zirconium titanate). An aqueous solution of oxalic acid was prepared with particles of ZT, Pb(NO3)(2) and La2O3. After the PbC2O4 and La2O3 precipitate on ZT particles, the materials were calcined and X-ray diffraction (XRD) showed the cubic phase of PLZT. This material was sintered, in two steps, and a density of about 8.0 g/cm(3) was obtained. After the second sintering the XRD pattern showed the occurrence of tetragonal and rhombohedral phases. This was caused by a stoichiometric deviation and the material showed a high optical transparency. (C) 1998 Elsevier B.V. B.V. All rights reserved.

Luminescence in semi-crystalline zirconium titanate doped with lanthanum

This paper aims to describe the synthesis of the semi-crystalline and crystalline powder of lanthanum doped with zirconium titanate (65/35), LZT through Pechini method. The analysis done by Raman demonstrated that semi-crystalline phase at 550 degrees C and crystalline phase after 600 degrees C were formed. The XRD pattern shows the ZrTiO4 phase formation demonstrating that La substitutions into the lattice take place. The calcined powder at different temperatures shows a semi-crystalline phase presenting photoluminescence effect when processed at low temperatures. From 300 to 400 degrees C a broadband is observed at 563 nm and 568 nm, respectively. Defects creation such as: Zr3+ center dot Vo(center dot center dot) and Ti3+ - V-O(center dot center dot), Zr and Ti replaced by La with vacancy formation, impurities and imperfections contributed to the photoluminescence effect. However, the main emission is due to a reverse Ti4+ -> O2- or/and Zr4+ -> O2- transition that occur within a regular titanate or zirconate eight-fold coordination [BO8-delta], B = Zr4+, Ti4+. (c) 2006 Elsevier B.V. All rights reserved.

Sintering and characterization of PLZT (9/65/35)

PLZT(9/65/35) obtained by association between the Pechini method (ZT) and partial oxalate (PLZT) was prepared. The stoichiometric phase and monophasic (cubic) PLZT obtained by calcination did not occur after sintering. The sintering process, by using two stages, caused a liquid phase formation due to a PbO excess (5 and 10 wt%). Samples with high density (similar to 8 g/cm(3)) and optical transparency(similar to 12%) were obtained. However, an equilibrium between the excess of PbO of sample/atmosphere PbO leads to a segregated PbO phase on the boundaries of the microstructure. A diffusion of Zr, Ti and La ions from PLZT to PbO phase promoted a stoichiometric deviation of the matrix and modified the optical and dielectric characteristics. (C) 2000 Elsevier B.V. Ltd and Techna S.r.l. All rights reserved.

The tribology of laminated magnetic recording heads

This thesis investigates the mechanisms that lead to pole tip recession (PTR) in laminated magnetic recording heads (also known as "sandwich heads"). These heads provide a platform for the utilisation of advanced soft magnetic thin films in practical recording heads suitable for high frequency helical scan tape recording systems. PTR results from a differential wear of the magnetic pole piece from the tape-bearing surface of the head. It results in a spacing loss of the playback or read signal of 54.6dB per recording wavelength separation of the poles from the tape. PTR depends on the material combination used in the head, on the tape type and the climate - temperature and relative humidity (r.h.). Five head materials were studied: two non-magnetic substrate materials- sintered multi granular CaTi03 and composite CaTi03/ZrTi04/Ti02 and three soft magnetic materials- amorphous CoNbZr, and nanocrystalline FeNbSiN and FeTaN. Single material dummy heads were constructed and their wear rates measured when cycling them in a Hi-8 camcorder against commercially available metal particulate (MP) and metal evaporated (ME) tapes in three different climates: 25°C/20%r.h., 25°C/80%r.h. and 40°C/80%r.h. X-ray photoelectron spectroscopy (XPS) was used to examine changes the head surface chemistry. Atomic force microscopy (AFM) was used to examine changes in head and tape surface topography. PTR versus cycling time of laminated heads of CaTi03/ZrTiO4/Ti02 and FeTaN construction was measured using AFM. The principal wear mechanism observed for all head materials was microabrasion caused by the mating body - the tape surface. The variation in wear rate with climate and tape type was due to a variation in severity in this mechanism, except for tape cycling at 40°C in which gross damage was observed to be occurring to the head surface. Two subsidiary wear mechanisms were found: third body scratching (all materials) and grain pullout (both ceramics and FeNbSiN). No chemical wear was observed, though tribochemical reactions were observed on the metal head surfaces. PTR was found to be caused by two mechanisms - the first differential microabrasion of the metal and substrate materials and which was characterised by a low (~10nm) equilibrium value. The second was by deep ploughing by third body debris particles, thought mainly to be grain pullout particles. This level of PTR caused by this mechanism was often more severe, and of a non-equilibrium nature. It was observed more for ME tape, especially at 40°C/80%r.h. and 25°c/20%r.h. Two other phenomena on the laminated head pole piece were observed and commented upon: staining and ripple texturing.

The influence of titania-zirconia-zirconium titanate nanotube characteristics on osteoblast cell adhesion

Studies of biomaterial surfaces and their influence on cell behavior provide insights concerning the design of surface physicochemical and topography properties of implant materials. Fabrication of biocompatible metal oxide nanotubes on metallic biomaterials, especially titanium alloys such as Ti50Zr via anodization, alters the surface chemistry as well as surface topography of the alloy. In this study, four groups of TiO2-ZrO2-ZrTiO4 nanotubes that exhibit diverse nanoscale dimensional characteristics (i.e. inner diameter Di, outer diameter Do and wall thicknesses Wt) were fabricated via anodization. The nanotubes were annealed and characterized using scanning electron microscopy and 3-D profilometry. The potential applied during anodization influenced the oxidation rate of titanium and zirconium, thereby resulting in different nanoscale characteristics for the nanotubes. The different oxidation and dissolution rates both led to changes in the surface roughness parameters. The in vitro cell response to the nanotubes with different nanoscale dimensional characteristics was assessed using osteoblast cells (SaOS2). The results of the MTS assay indicated that the nanotubes with inner diameter (Di)≈40nm exhibited the highest percentage of cell adhesion of 41.0%. This result can be compared to (i) 25.9% cell adhesion at Di≈59nm, (ii) 33.1% at Di≈64nm, and (iii) 33.5% at Di≈82nm. The nanotubes with Di≈59nm exhibited the greatest roughness parameter of Sa (mean roughness), leading to the lowest ability to interlock with SaOS2 cells.