Ordered Zinc Antimonate Nanoisland Attachment and Morphology Control of ZnO Nanobelts by Sb Doping

Hierarchical heterostructures of zinc antimonate nanoislands on ZnO nanobelts were prepared by simple annealing of the polymeric precursor. Sb can promote the growth of ZnO nanobelts along the [552] direction because of the segregation of Sb dopants on the +(001) and (110) surfaces of ZnO nanobelts. Furthermore, the ordered nanoislands of toothlike ZnSb2O6 along the [001](ZnO) direction and rodlike Zn7Sb2O12 along the [110](ZnO) direction can be formed because of the match relation of the lattice and polar charges between ZnO and zinc antimonate. The incorporation of Sb in a ZnO lattice induces composition fluctuation, and the growth of zinc antimonate nanoislands on nanobelt sides induces interface fluctuation, resulting in dominance of the bound exciton transition in the room temperature near-band-edge (NBE) emission at relatively low excitation intensity. At high excitation intensity, however, Auger recombination makes photogenerated electrons release phonon and relax from the conduction band to the trap states, causing the NBE emission to gradually saturate and redshift with increasing excitation intensity. The green emission more reasonably originates from the recombination of electrons in shallow traps with doubly charged V-O** oxygen vacancies. Because a V-O** center can trap a photoactivated electron and change to a singly charged oxygen vacancy V-O* state, its emission intensity exhibits a maximum with increasing excitation intensity.

Preparation of high purity ZnO nanobelts by thermal evaporation of ZnS

High purity one-dimensional ZnO nanobelts were synthesized by thermally evaporating commercial ZnS powders in a hydrogen-oxygen mixture gas at 1050 degrees C. It was found that these ZnO nanobelts had a single crystal hexagonal wurtzite structure growing along the [0001] direction. They had a rectangle-shaped cross-section with typical widths of 20 to 100 nanometers and lengths of up to hundreds of micrometers with lattice constants of a = 0.325 nm and c = 0.520 nm. The self-catalytic hydrogen-oxygen assisted growth of ZnO nanobelt is discussed. The photoluminescence (PL) characterization of the ZnO nanobelts shows strong near-band UV emission (about 383 nm) and one broad peak at 501 nm, which indicates that the ZnO nanobelts have good potential application in optoelectronic devices.

Hybrid light-emitting diodes based on ZnO nanowires

ZnO is a wide band-gap semiconductor that has several desirable properties for optoelectronic devices. With its large exciton binding energy of ~60 meV, ZnO is a promising candidate for high stability, room-temperature luminescent and lasing devices [1]. Ultraviolet light-emitting diodes (LEDs) based on ZnO homojunctions had been reported [2,3], while preparing stable p-type ZnO is still a challenge. An alternative way is to use other p-type semiconductors, ether inorganic or organic, to form heterojunctions with the naturally n-type ZnO. The crystal structure of wurtzite ZnO can be described as Zn and O atomic layers alternately stacked along the [0001] direction. Because of the fastest growth rate over the polar (0001) facet, ZnO crystals tend to grow into one-dimensional structures, such as nanowires and nanobelts. Since the first report of ZnO nanobelts in 2001 [4], ZnO nanostructures have been particularly studied for their potential applications in nano-sized devices. Various growth methods have been developed for growing ZnO nanostructures, such as chemical vapor deposition (CVD), Metal-organic CVD (MOCVD), aqueous growth and electrodeposition [5]. Based on the successful synthesis of ZnO nanowires/nanorods, various types of hybrid light-emitting diodes (LEDs) were made. Inorganic p-type semiconductors, such as GaN, Si and SiC, have been used as substrates to grown ZnO nanorods/nanowires for making LEDs. GaN is an ideal material that matches ZnO not only in the crystal structure but also in the energy band levels. However, to prepare Mg-doped p-GaN films via epitaxial growth is still costly. In comparison, the organic semiconductors are inexpensive and have many options to select, for a large variety of p-type polymer or small-molecule semiconductors are now commercially available. The organic semiconductor has the limitation of durability and environmental stability. Many polymer semiconductors are susceptible to damage by humidity or mere exposure to oxygen in the air. Also the carrier mobilities of polymer semiconductors are generally lower than the inorganic semiconductors. However, the combination of polymer semiconductors and ZnO nanostructures opens the way for making flexible LEDs. There are few reports on the hybrid LEDs based on ZnO/polymer heterojunctions, some of them showed the characteristic UV electroluminescence (EL) of ZnO. This chapter reports recent progress of the hybrid LEDs based on ZnO nanowires and other inorganic/organic semiconductors. We provide an overview of the ZnO-nanowire-based hybrid LEDs from the perspectives of the device configuration, growth methods of ZnO nanowires and the selection of p-type semiconductors. Also the device performances and remaining issues are presented.

Experimental and theoretical study of microstructure effect on piezoelectric property of one dimensional ZnO nanostructures

Emerging nanogenerators have attracted the attention of the research community, focusing on energy generation using piezoelectric nanomaterials. Nanogenerators can be utilized for powering NEMS/MEMS devices. Understanding the piezoelectric properties of ZnO one-dimensional materials such as ZnO nanobelts (NBs) and Nanowires (NWs) can have a significant impact on the design of new devices. The goal of this dissertation is to study the piezoelectric properties of one-dimensional ZnO nanostructures both experimentally and theoretically. First, the experimental procedure for producing the ZnO nanostructures is discussed. The produced ZnO nanostructures were characterized using an in-situ atomic force microscope and a piezoelectric force microscope. It is shown that the electrical conductivity of ZnO NBs is a function of applied mechanical force and its crystalline structure. This phenomenon was described in the context of formation of an electric field due to the piezoelectric property of ZnO NBs. In the PFM studies, it was shown that the piezoelectric response of the ZnO NBs depends on their production method and presence of defects in the NB. Second, a model was proposed for making nanocomposite electrical generators based on ZnO nanowires. The proposed model has advantages over the original configuration of nanogenerators which uses an AFM tip for bending the ZnO NWs. Higher stability of the electric source, capability for producing larger electric fields, and lower production costs are advantages of this configuration. Finally, piezoelectric properties of ZnO NBs were simulated using the molecular dynamics (MD) technique. The size-scale effect on piezoelectric properties of ZnO NBs was captured, and it is shown that the piezoelectric coefficient of ZnO NBs decreases by increasing their lateral dimensions. This phenomenon is attributed to the surface charge redistribution and compression of unit cells that are placed on the outer shell of ZnO NBs.

Different nanostructures from different plasmas : nanoflowers and nanotrees on silicon

Using the advanced radio-frequency plasma-assisted magnetron deposition system, various nanostructures such as nanoflowers of carbon nanotubes, ZnO nanobelts, and silicon nanotrees were successfully synthesized. In this paper, we present the photographs of ICP and magnetron discharges, the photograph of a complex plasma structure, and the SEM images of various nanostructures synthesized in the system with magnetron and ICP sources operating simultaneously.

Zn2SiO4/ZnO Core/Shell Coaxial Heterostructure Nanobelts Formed by an Epitaxial Growth

Si-doped ZnO can be synthesized on the surface of the early grown Zn2SiO4 nanostructures and form core/ shell coaxial heterostructure nanobelts with an epitaxial orientation relationship. A parallel interface with a periodicity array of edge dislocations and an inclined interface without dislocations can be formed. The visible green emission is predominant in PL spectra due to carrier localization by high density of deep traps from complexes of impurities and defects. Due to band tail localization induced by composition and defect fluctuation, and high density of free-carriers donated by doping, especially the further dissociation of excitons into free-carriers at high excitation intensity, the near-band-edge emission is dominated by the transition of free-electrons to free-holes, and furthermore, exhibits a significant excitation power-dependent red-shift characteristic. Due to the structure relaxation and the thermalization effects, carrier delocalization takes place in deep traps with increasing excitation density. As a result, the green emission passes through a maximum at 0.25I(0) excitation intensity, and the ratio of the violet to green emission increases monotonously as the excitation laser power density increases. The violet and green emission of ZnO nanostructures can be well tuned by a moderate doping and a variation in the excitation density.

Property-performance control of multidimensional, hierarchical, single-crystalline ZnO nanoarchitectures

Diverse morphologies of multidimensional hierarchical single-crystalline ZnO nanoarchitectures including nanoflowers, nanobelts, and nanowires are obtained by use of a simple thermal evaporation and vapour-phase transport deposition technique by placing Au-coated silicon substrates in different positions inside a furnace at process temperatures as low as 550 °C. The nucleation and growth of ZnO nanostructures are governed by the vapour–solid mechanism, as opposed to the commonly reported vapour–liquid–solid mechanism, when gold is used in the process. The morphological, structural, compositional and optical properties of the synthesized ZnO nanostructures can be effectively tailored by means of the experimental parameters, and these properties are closely related to the local growth temperature and gas-phase supersaturation at the sample position. In particular, room-temperature photoluminescence measurements reveal an intense near-band-edge ultraviolet emission at about 386 nm for nanobelts and nanoflowers, which suggests that these nanostructures are of sufficient quality for applications in, for example, optoelectronic devices.

Synthesis of One-Dimensional ZnO Nanostructures from Zn Powder/Granule

We report the growth of one-dimensional ZnO nanostructures with different morphologies such as nanoneedles, nanorods, nanobelts from Zn powder/granule. The growth process is different from the conventional vapor-solid mechanism. The advantage of this method is that neither a catalyst nor any gas flow is required for the synthesis of nanostructures. Depending upon the Zn powder or Zn granules as the starting material different nanostructures have been synthesized which demonstrates the versatility of the technique.

Morphology controlled synthesis of wurtzite ZnS nanostructures through simple hydrothermal method and observation of white light emission from ZnO obtained by annealing the synthesized ZnS nanostructures

A controllable synthesis of phase pure wurtzite (WZ) ZnS nanostructures has been reported in this work at a low temperature of similar to 220 degrees C using ethylenediamine as the soft template and by varying the molar concentration of zinc to sulphur precursors as well as by using different precursors. A significant reduction in the formation temperature required for the synthesis of phase pure WZ ZnS has been observed. A strong correlation has been observed between the morphology of the synthesized ZnS nanostructures and the precursors used during synthesis. It has been found from Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) image analyses that the morphology of the ZnS nanocrystals changes from a block-like to a belt-like structure having an average length of similar to 450 nm when the molar ratio of zinc to sulphur source is increased from 1 : 1 to 1 : 3. An oriented attachment (OA) growth mechanism has been used to explain the observed shape evolution of the synthesized nanostructures. The synthesized nanostructures have been characterized by the X-ray diffraction technique as well as by UV-Vis absorption and photoluminescence (PL) emission spectroscopy. The as-synthesized nanobelts exhibit defect related visible PL emission. On isochronal annealing of the nanobelts in air in the temperature range of 100-600 degrees C, it has been found that white light emission with a Commission Internationale de I'Eclairage 1931 (CIE) chromaticity coordinate of (0.30, 0.34), close to that of white light (0.33, 0.33), can be obtained from the ZnO nanostructures obtained at an annealing temperature of 600 degrees C. UV light driven degradation of methylene blue (MB) dye aqueous solution has also been demonstrated using as-synthesized nanobelts and similar to 98% dye degradation has been observed within only 40 min of light irradiation. The synthesized nanobelts with visible light emission and having dye degradation activity can be used effectively in future optoelectronic devices and in water purification for cleaning of dyes.

Molecular Dynamics And Density Functional Studies Of A Body-Centered-Tetragonal Polymorph Of Zno

We report a previously unknown body-centered-tetragonal structure for ZnO. This structure results from a phase transformation from wurtzite in [0001]-oriented nanorods during uniaxial tensile loading and is the most stable phase for ZnO when stress is above 7 GPa. The stress-induced phase transformation has important implications for the electronic, piezoelectric, mechanical, and thermal responses of ZnO. The discovery of this polymorph brings about a more complete understanding of the extent and nature of polymorphism in ZnO. A crystalline structure-load triaxiality map is developed to summarize the relationship between structure and loading.

Novel Mechanical Behavior Of Zno Nanorods

A novel stress-strain relation with two stages of linear elastic deformation is observed in [0 0 0 1]-oriented ZnO nanorods under uniaxial tensile loading. This phenomenon results from a phase transformation from wurtzite (WZ, P6(3)mc space group) to a body-centered tetragonal structure with four-atom rings (denoted as BCT-4) belonging to the P4(2)/mnm space group. The analysis here focuses on the effects of nanorod size and temperature on the phase transformation and the associated mechanical behavior. It is found that as size is increased from 19.5 to 45.5 angstrom, the critical stress for nucleation of the transformation decreases by 25% from 21.90 to 16.50 GPa and the elastic moduli of the WZ- and BCT-4-structured nanorods decrease by 24% (from 299.49 to 227.51 GPa) and 38% (from 269.29 to 166.86 GPa), respectively. A significant temperature effect is also observed, with the critical stress for transformation initiation decreasing 87.8% from 17.89 to 2.19 GPa as temperature increases from 300 to 1500 K. (c) 2007 Elsevier B.V. All rights reserved.

Numerical simulation of the growth of ZnO nanostructures in a tube furnace by physical vapour deposition

Zinc oxide is a versatile II-VI naturally n-type semiconductor that exhibits piezoelectric properties. By controlling the growth kinetics during a simple carbothermal reduction process a wide range of 1D nanostructures such as nanowires, nanobelts, and nanotetrapods have been synthesized. The driving force: for the nanostructure growth is the Zn vapour supersaturation and supply rate which, if known, can be used to predict and explain the type of crystal structure that results. A model which attempts to determine the Zn vapour concentration as a function of position in the growth furnace is described. A numerical simulation package, COMSOL, was used to simultaneously model the effects of fluid flow, diffusion and heat transfer in a tube furnace made specifically for ZnO nanostructure growth. Parameters such as the temperature, pressure, and flow rate are used as inputs to the model to show the effect that each one has on the Zn concentration profile. An experimental parametric study of ZnO nanostructure growth was also conducted and compared to the model predictions for the Zn concentration in the tube. © 2008 Materials Research Society.

First-principles study on the structural and electronic properties of ultrathin ZnO nanofilms

First-principles calculations; ZnO nanofilms; Electronic properties; Quantum effects； NANOBELTS; NANORINGS; WURTZITE; ENERGY Abstract: Using first-principles density-functional calculations, we have studied the structural and electronic properties Of Ultrathin ZnO {0001} nanofilms. The structural parameters, the charge densities, band structures and density of states have been investigated. The results show that there are remarkable charge transfers from Zn to O atoms in the ZOO nanofilms. All the ZOO nanofilms exhibit direct wide band gaps compared with bulk counterpart, and the gap decreases with increased thickness of the nanofilms. The decreased band gap is associated with the weaker ionic bonding within layers and the less localization of electrons in thicker films. A staircase-like density of states occurs at the bottom of conduction band, indicating the two-dimensional quantum effects in ZnO nanofilms.