Preparation and luminescence properties of Mn2+-doped ZnGa2O4 nanofibers via electrospinning process

One-dimensional Mn2+-doped ZnGa2O4 nanofibers were prepared by a simple and cost-effective electrospinning process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric and differential thermal analysis (TG-DTA), scanning electron microscopy (SEM), energy-dispersive X-ray spectrum (EDS), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), photoluminescence (PL) and cathodoluminescence (CL) spectra as well as kinetic decays were used to characterize the samples. SEM results indicated that the as-formed precursor fibers and those annealed at 700 degrees C are uniform with length of several tens to hundred micrometers, and the diameters of the fibers decrease greatly after being heated at 700 degrees C. Under ultraviolet excitation (246 nm) and low-voltage electron beams (1-3 kV) excitation, the ZnGa2O4:Mn2+ nanofibers presents the blue emission band of the ZnGa2O4 host lattice and the strong green emission with a peak at 505 nm corresponding to the T-4(1)-(6)A(1) transition of Mn2+ ion.

Citrate-gel synthesis and luminescent properties of ZnGa2O4 doped with Mn2+ and EU3+

By using inorganic salts as raw materials and citric acid as complexing agent, spinel oxide ZnGa2O4 and Mn2+, Eu3+-doped ZnGa2O4 phosphor powders were prepared by a citrate-gel process. X-ray diffraction (XRD), TG-DTA, FT-IR. and luminescence excitation and emission spectra were used to characterize the resulting products. The results of XRD reveal that the powders begin to crystallize at 500 degreesC and pure ZnGa2O4 phase is obtained at 700 degreesC, which agrees well with the results of TG-DTA and FT-IR. In the crystalline ZnGa2O4, the Eu shows its characteristic red (615 nm, D-5(0)-F-7(2)) emission with a quenching concentration of 5 mol% (of Ga3+), and the Mn shows green emission (505 nm, T, A,) with a quenching concentration of 0.1 mol% (of Zn2+). The luminescence mechanism of ZnGa2O4:Mn2+/Eu3+ is presented.

Effect of Substrate Temperature on the Structural and Luminescent Characteristics of RF-Magnetron-Sputtered ZnGa2O4:Dy3+ Thin Films

ZnGa2O4:Dy3+ phosphor thin films were deposited on quartz substrates by radio frequency rf magnetron sputtering and the effect of substrate temperature on its structural and luminescent properties was investigated. Polycrystalline film could be deposited even at room temperature. The crystalline behavior, Zn/Ga ratio, and surface morphology of the films were found to be highly sensitive to substrate temperature. Under UV illumination, the as-deposited films at and above 300°C gave white luminescence even without any postdeposition treatments. The photoluminescent PL emission can be attributed to the combined effect of multicolor emissions from the single luminescence center Dy3+ via host-sensitization. Maximum PL emission intensity was observed for the film deposited at 600°C, and the CIE chromaticity coordinates of the emission were determined to be x,y = 0.34, 0.31 .

Electrical and Optical Properties of Znga2o4 Thin Films Deposited By Pulsed Laser Deposition

ZnGa2O4 spinel is a promising new UV transparent electronic conductor. Enhancing the electrical conductivity of this potential oxide phosphor can make it a promising transparent conducting oxide. In this paper, we have investigated the effects of processing and doping on the conductivity of semiconducting ZnGa2O4, particularly thin films. Crystalline zinc gallate thin films have been deposited on fused quartz substrates employing the pulsed laser deposition (PLD) technique at room temperature for an oxygen partial pressure of 0.1 Pa (0.001mbar). The films were found to be UV transparent, the band gap of which shifted to 4.75eV on hydrogen annealing. The band gap of the oxygen stoichiometric bulk powder samples (4.55eV) determined from diffuse reflection spectrum (DRS) shifted to 4.81eV on reduction in a hydrogen atmosphere. The electrical conductivity improved when Sn was incorporated into the ZnGa2O4 spinel. The conductivity of ZnGa2O4:Sn thin films was further improved on reduction.

The effects of ZnGa2O4 formation on structural and optical properties of ZnO : Ga powders

Gallium-doped zinc oxide (ZnO:Ga 1, 2 3, 4 and 5 at%) samples were prepared in powder form by modifying the Pechini method. The formation of zinc gallate (ZnGa2O4) With the spinel crystal structure was observed even in ZnO:Ga 1 at% by X-ray diffraction. The presence of ZnGa2O4 in ZnO:Ga samples was also evidenced by luminescence spectroscopy through its blue emission at 430 nm, assigned to charge transfer between Ga3+ at regular octahedral symmetry and its surrounding O2- ions. The amount of ZnGa2O4 increases as the dopant concentration increases, as observed by the quantitative phase analysis by the Rietveld method. (C) 2006 Elsevier B.V. All rights reserved.

Caracterização óptica e estrutural de materiais isolantes dopados com metais de transição do grupo do ferro

O objetivo deste trabalho foi a investigação das propriedades ópticas e estruturais de materiais isolantes contendo metais de transição do grupo do ferro como impurezas substitucionais. As técnicas usadas para o estudo de amostras MgGa2O4, MgGa2O4 + B- Ga2O3 e ZnGa2O4 dopadas com Cr3+e Fe3+ foram: fotoluminescência, excitação, difração de raios-X, espalhamento de nêutrons, método de Rietveld para o refinamento da estrutura e espectroscopia fotoacústica. Estas técnicas permitem a determinação da coordenação do sítio impureza, a atribuição das transições de energia, o cálculo dos parâmetros de energia e a determinação de propriedades cristalográficas. As amostras apresentam largas bandas de energia nas regiões do visível e do infravermelho. Estas transições indicam a relevância deste estudo pelo interesse tecnológico na obtenção de novos materais com bandas sintonizáveis. No primeiro capítulo apresentamos uma introdução à teoria de campo cristalino. No segundo capítulo apresentamos medidas de fotoluminescência e excitação do MgGa2O4 dopado com 0,1, 0,5, 1,0 e 5,0 % de Cr3+ a 77 K e temperatura ambiente. No terceiro capítulo usamos fotoluminescência, excitação, espalhamento de nêutrons, difração de raios X, fotoacústica e método de refino de Rietveld para analisar o sistema MgGa2O4 + B-Ga2O3 contendo 0,1, 0,5, 1,0 e 5,0 % de Cr3+. No quarto capítulo mostramos resultados de fotoacústica para o ZnGa2O4 dopado com 5% e 10% de Fe3+.

Tunable luminescence properties of Tb3+-doped LaGaO3 nanocrystalline phosphors

Nanocyrstalline Tb3+-doped LaGaO3 phosphors were prepared through a Pechini-type sol-gel process. X-ray diffraction, field-emission scanning electron microscopy (FESEM), photoluminescence, cathodoluminescence spectra, and lifetimes were utilized to characterize the synthesized phosphors. XRD results reveal that the sample begins to crystallize at 900 degrees C and pure LaGaO3 phase can be obtained at 1000 degrees C. FESEM images indicate that the Tb3+-doped LaGaO3 phosphors are composed of aggregated spherical particles with sizes ranging from 40 to 80 nm. Under the excitation of ultraviolet light and low-voltage electron beams (0.5-3 kV), the Tb3+-doped LaGaO3 phosphors show the characteristic emissions from the LaGaO3 host lattice and the Tb3+ (D-5(3,4)-F-7(6,5,4,3) transitions). The emission colors of Tb3+-doped LaGaO3 phosphors can be tuned from blue to green by changing the excitation wavelength of ultraviolet light and the doping concentration of Tb3+ to some extent. Relevant luminescence mechanisms are discussed.

柠檬酸-凝胶法合成ZnGa_2O_4∶Mn~(2+)/Eu~(3+)及其发光性能的研究

采用柠檬酸 凝胶法合成了纯的ZnGa2 O4粉末以及ZnGa2 O4∶Mn2 + /Eu3 + 粉末 ,利用X射线衍射(XRD)、热重及差热分析 (TG DTA)、发光光谱等测试手段对ZnGa2 O4和ZnGa2 O4∶Mn2 + /Eu3 + 的结晶过程、发光性质进行了研究。XRD结果表明 ,柠檬酸 凝胶法合成的样品在 5 0 0℃时已开始结晶 ,在 70 0℃时可得到纯相的ZnGa2 O4多晶粉末 ,这比传统固相法的烧结温度低 5 0 0℃。发光光谱测试表明ZnGa2 O4∶Mn2 + 在4 5 0nm和 5 0 6nm处出现两个发射带 ,前者属于ZnGa2 O4基质的发射 ,后者属于Mn2 + 的4T1→6A1的跃迁发射。ZnGa2 O4∶Eu3 + 则呈现Eu3 + 的特征红光发射 ,最强峰位于 6 13nm ,属于Eu3 + 的5D0 →7F2 超灵敏跃迁。通过光谱分析进一步证实了ZnGa2 O4∶Mn2 + /Eu3 + 的发光机理是基质敏化 ,吸收能量并向激活离子传递能量

Synthesis and characterization of ZnO and ZnO : Ga films and their application in dye-sensitized solar cells

Highly crystalline ZnO and Ga-modified zinc oxide (ZnO:Ga) nanoparticles containing 1, 3 and 5 atom% of Ga3+ were prepared by precipitation method at low temperature. The films were characterized by XRD, BET, XPS and SEM. No evidence of zinc gallate formation (ZnGa2O4), even in the samples containing 5 atom% of gallium, was detected by XRD. XPS data revealed that Ga is present into the ZnO matrix as Ga3+, according to the characteristic binding energies. The particle size decreased as the gallium level was increased as observed by SEM, which might be related to a faster hydrolysis reaction rate. The smaller particle size provided films with higher porosity and surface area, enabling a higher dye loading. When these films were applied to dye-sensitized solar cells (DSSCs) as photoelectrodes, the device based on ZnO: Ga 5 atom% presented an overall conversion efficiency of 6% (at 10 mW cm(-2)), a three-fold increase compared to the ZnO-based DSSCs under the same conditions. To our knowledge, this is one of the highest efficiencies reported so far for ZnO-based DSSCs. Transient absorption (TAS) study of the photoinduced dynamics of dye-sensitized ZnO:Ga films showed that the higher the gallium content, the higher the amount of dye cation formed, while no significant change on the recombination dynamics was observed. The study indicates that Ga-modification of nanocrystalline ZnO leads to an improvement of photocurrent and overall efficiency in the corresponding device.

Células solares de ZnO:Ga nanocristalino sensibilizado por corante

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