Gamma-ray induced color centers in Yb : YAG crystals grown by Czochralski method

20 at.% Yb:YAG single crystals have been grown by the CZ method and gamma-ray irradiation induced color centers and valence change of Fe3+ and Yb3+ ions in Yb:YAG have been studied. One significant 255 nm absorption band was observed in as-grown crystals and was attributed to Fe3+ ions. Two additional absorption (AA) bands located at 255 nm and 345 nm, respectively, were produced after gamma irradiation. The changes in the AA spectra after gamma irradiation and air annealing are mainly related to the charge exchange of the Fe3+, Fe2+, oxygen vacancies and F-type color centers. Analysis shows that the broad AA band is associated with Fe2+ ions and F-type color centers. The transition Yb3+ Yb2+ takes place as an effect of recharging of one of the Yb3+ ions from a pair in the process of gamma irradiation. (C) 2006 Elsevier Ltd. All rights reserved.

Color centers and charge state change in Ce : YAG crystals grown by temperature gradient techniques

Color centers and impurity defects of Ce:YAG crystals grown in reduction atmosphere by temperature gradient techniques have been investigated by means of gamma irradiation and thermal treatments. Four absorption bands associated with color centers or impurity defects at 235, 255, 294 and 370 nm were observed in as-grown crystals. Changes in optical intensity of the 235 and 370 nm bands after gamma irradiation indicate that they are associated with F+-type color center. Charge state change processes of Fe3+ impurity and Ce3+ ions take place in the irradiation process. The variations of Ce3+ ions concentration clearly indicate that Ce4+ ions exist in Ce:YAG crystals and gamma irradiations could increase the concentration of Ce3+ ions. Annealing treatments and the changes in optical density suggest that a heterovalent impurity ion associated with the 294 nm band seems to be present in the crystals. (c) 2005 Elsevier B.V. All rights reserved.

Color centers in Yb : YAG crystals grown by temperature-gradient techniques

Yb: YAG (Yb: Y3Al5O12) crystals have been grown by temperature-gradient techniques (TGT) and their color centers and impurity defects were investigated by means of gamma irradiations and thermal treatment. Two color centers located at 255 and 290 nm were observed in the as-grown TGT-Yb: YAG. Analysis shows that the 255 nm band may be associated with Fe3+ ions. Absorption intensity changes of the 290 nm band after gamma irradiation and thermal treatment indicate that this band may be associated with oxygen-vacancy defects. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Gamma-irradiation effects on Ce-doped YAG crystals grown by Cz and TGT method

Gamma-rays radiation effects on Ce:YAG crystals grown by Czochralski (Cz) and temperature gradient techniques (TGT) have been studied by means of optical absorption and luminescence spectra. Valence of Ce3+ ion changes during the gamma-ray irradiation process and this result indicates Ce4+ ion may exist in both Cz-Ce:YAG and TGT-Ce:YAG crystals. Thermally stimulated luminescence measurements reveal intense thermoluminescence peaks in gamma-irradiated Ce:YAG crystals and trap parameters were calculated by general-order kinetics expression. (C) 2006 Elsevier B.V. All rights reserved.

EFFECT OF THE CONCENTRATION OF THE ER3+ ION ON THE SPECTRAL INTENSITY PARAMETERS OF ER-YAG CRYSTALS

The absorption spectra of Er:YAG (YAG, yttrium-aluminium-garnet) crystals containing different concentrations of the trivalent erbium ion were measured and the spectral intensity parameters were calculated from these experimental spectra using the Judd-Ofelt model. The results indicate that the phenomenological intensity parameters, OMEGA(lambda) (lambda = 2, 4 and 6), vary as a function of the concentration of the Er3+ ion in the Er:YAG crystal, but no variation in the fluorescence-branching ratios as a function of the concentration of the Er3+ ion is found. An empirical formula is proposed to describe the relationship between the spectral intensity parameters and the Er3+ ion concentration in the Er:YAG crystal. The spectral intensity parameters exhibit a maximum in Er:YAG crystals containing about 1-1.5 at.% Er3+ ion. The effect of the Er3+ ion concentration on the spectral intensity parameters may be attributed to the inhomogeneous lattice distortion in the cell of the Er:YAG crystal caused by the dopant erbium ions.

Femtosecond laser ablation of crystals SiO2 and YAG

Damage threshold of crystals SiO2 and YAG against 60-900 fs, 800 nm laser pulses are reported. The breakdown mechanisms were discussed based on the double-flux model and Keldysh theory. We found that impact ionization plays the important role in the femtosecond laser-induced damage in crystalline SiO2, while the roles of photoionization and impact ionization in YAG crystals depend on the laser pulse durations. (C) 2007 Elsevier B.V. All rights reserved.

侧面抽运国产Nd∶YAG陶瓷棒的激光特性

实验研究了激光二极管阵列(LDA)侧向抽运国产Nd∶YAG陶瓷棒的准连续及被动调Q激光输出特性。该陶瓷激光器采用LDA侧面紧密环绕均匀排布的抽运结构,陶瓷棒抽运区域长度为20 mm,其总尺寸为3 mm×35 mm,掺杂原子数分数为~1%。在千赫兹准连续运转条件下,当平-平谐振腔的输出耦合镜透过率为47.3%时,获得最大平均功率23 W的1064 nm激光输出,光束发散角为4.5 mrad,斜率效率达12%。在谐振腔内插入Cr4+∶YAG晶体作为被动调Q开关,成功地实现了陶瓷激光器千赫兹重复频率调Q激光脉冲输出,当Cr4+∶YAG晶体初始透过率为60%时,输出激光脉冲宽度(半峰全宽)可窄至14.5 ns,调Q动静比约为40%。

Radially polarized and pulsed output from passively Q-switched Nd:YAG ceramic microchip laser

For the first time, to the best of our knowledge, a radially polarized laser pulse was produced from a passively Q-switched Nd:YAG ceramic microchip laser with a piece of Cr4+:YAG crystal as the saturable absorber and multilayer concentric subwavelength grating as the polarization-selective output coupler. The averaged laser power reached 450 mW with a slope efficiency of 30.2%. The laser pulse had a maximum peak power of 759 W, a minimum pulse duration of 86 ns, and a 6.7 kHz repetition rate at 3.7 W absorbed pump power. The polarization degree of the radially polarized pulse was measured to be as high as 97.4%. Such a radially polarized laser pulse with a high peak power and a short width is important to numerous applications such as metal cutting. (C) 2008 Optical Society of America

Passively Q-switched Yb : YAG laser with Cr4+: YAG as the saturable absorber

By using a continuous-wave Ti:sapphire laser as a pumping source, we demonstrated a passively Q-switched Yb:YAG laser at room temperature with Cr4+:YAG as the saturable absorber. We achieved an average output power of as much as 55 mW at 1.03 mum with a pulse width (FWHM) as short as 350 ns. The initial transmission of the Cr4+:YAG has an effect on the pulse duration (FWHM) and the repetition rate of the Yb:YAG passively Q-switched laser. The Yb:YAG crystal can be a most promising passively Q-switched laser crystal for compact, efficient, solid-state lasers. (C) 2001 Optical Society of America.

Yb：YAG晶体的红外闪烁特性

用脉冲电子束激发测量了不同Yb^3+掺杂浓度的Yb：YAG晶体的红外(IR)闪烁发光性能。Yb：YAG晶体的IR闪烁发光具有高的光产额和长的衰减时间，但存在浓度猝灭效应和温度依赖关系。Yb：YAG晶体的IR闪烁性能还与晶体品质有关，相同掺杂浓度的Yb：YAG晶体，品质优异的会获得更高的光产额。这一初步的研究成果表明，部分掺Yb^3+晶体有可能用于医学成像装置。

Yb：YAG晶体的合作发光现象

研究了Yb：YAG晶体的合作发光现象。当用940hm的近红外光激发时，Yb：YAG晶体有明显的上转换蓝色发光。实验发现498nm的蓝色发光强度与激发功率的平方成正比，而且Yb^3＋掺杂浓度越高，蓝色发光越强。分析表明这是Yb^3＋间强的相互作用导致的合作发光，是由于Yb^3＋在共价性的YAG基质中，它的4f^I3电子易于与近邻离子发生相互作用导致的。

Effect of air annealing on the spectral properties of Ce : Y3Al5O12 single crystals grown by the temperature gradient technique

Five absorption hands, at 227, 300 340, 370 and 457nm, were observed in the optical absorption spectrum of Ce:Y3Al5O12 (Ce:YAG) crystals grown by the temperature gradient technique (TGT). The absorption bands at 227, 340, and 457 nm were identified Lis belonging to the Ce3+ -ion in the YAG crystal. A near UV optical emission band at 398nm was observed. with an excitation spectrum containing two bands, at 235 and 370nm. No fluorescence was detected under 300 nm excitation. The pair of absorption bands at 235 and 370 nm and the absorption band at 300 nm were attributed to the F- and F+-type color centers, respectively. The color centers model was also applied to explain the spectral changes in the Ce:YAG (TGT) crystal, including the reduction in the Ce 31 -ion absorption intensity, after annealing in an oxidizing atmosphere (air). (C) 2004 Elsevier B.V. All rights reserved.

大尺寸高浓度掺杂Nd：GGG和Nd：YAG晶体的光谱性质(英文)

由于Nd^3＋离子半径0．112nm和Y^3＋离子半径0．101nm相差10．9％，使得Nd^3＋离子非常难于进入YAG晶体中。我们用温度梯度法生长了大尺寸高浓度（2．8 at％）的Nd：YAG晶体，同时与用提拉法Nd：GGG晶体进行了比较。分析了高浓度掺杂Nd：GGG和Nd：YAG晶体浓度猝灭问题。研究了不同浓度掺杂的猝灭效应。在同样的掺杂浓度下，我们发现它们的猝灭程度不同，其原因是两种晶体中△Emism（-）和（＋） △Emism（＋） 不同。

Yb：YAG及Cr，Yb：YAG晶体的发光特性

研究了室温下Yb：YAG的上转换荧光光谱，此荧光归因于Yb^3＋离子的“合作”发光和Yb抖离子到稀土杂质离子的能量转移。测试了Yb；YAG晶体的X射线荧光，发光峰对应于电荷迁移态到Yb^3＋离子的基态、激光态间的跃迁。研究了Cr，Yb：YAG晶体的荧光光谱。讨论了Cr^4＋激光输出的可能性。

温度梯度法生长Nd：YAG激光晶体的核心分布

用温度梯度法生长了直径为75mm大尺寸的Nd：YAG激光晶体，通过退火排除了生长过程中进入晶体的碳原子．用正交偏光显微镜观察了晶体的核心分布以及生长条纹．测试了室温下的吸收谱并利用吸收谱研究了Nd离子在YAG晶体中的分布．比较了温度梯度法与提拉法生长晶体的区别．