Effect of Sorbate-Zeolite Interaction on Cluster Lifetime and Size of Sorbates: Xe in NaY

Molecular dynamics calculations are reported for Xe in sodium Y zeolite with varying strengths of sorbate-zeolite dispersion interaction. In the absence of any dispersion interaction between the sorbate and the zeolite, the presence of the zeolite has a purely geometrical role. Increase in the strength of the sorbate-zeolite interaction increases the monomer population and decreases the population of dimers and higher sized clusters. The lifetime of the monomers as well as dimers increases with the strength of the dispersion interaction. The observed variations in the lifetime and the population of the different sized clusters is explained in terms of the changes in the potential energy surface caused by the increase in the strength of the dispersion interaction.

Formation of amorphous xenon nanoclusters and microstructure evolution in pulsed laser deposited Ti(62.5)Si(37.5) thin films during Xe ion irradiation

As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe(+) ion beam to an ion fluence of about 10(16) ions-cm(-2). Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti(5)Si(3) intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.

Formation of amorphous xenon nanoclusters and microstructure evolution in pulsed laser deposited Ti62.5Si37.5 thin films during Xe ion irradiation

As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe+ ion beam to an ion fluence of about 1016 ions-cm−2. Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti5Si3 intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.

The relative abundances of Sn, Te, Xe, Ba, and Ce in the cosmic radiation

Elements with even atomic number (Z) in the interval 50 ≤ Z ≤ 58 have been resolved in the cosmic radiation using the Heavy Nuclei Experiment on the HEAO-3 satellite. Their relative abundances have been compared with the results expected from pure r-process material, pure s-process material, and solar system material, both with and without a modification due to possible first ionization potential effects. Such effects may be the result of the preferential acceleration, and hence enhancement in the cosmic rays, or those elements having low first ionization potentials. We find that our measurements are inconsistent with pure r-process material at the greater than 98% confidence level whether or not the first ionization potential adjustments are made.

In addition, we have compared our results with mixtures having varying ratios of pure r-process material to pure s-process material. We find that, if no first ionization potential effects are included,

(r/s)CRS/(r/s)SS = 0.20^+0.18_-0.14

where CRS refers to the cosmic ray source and SS refers to the solar system, consistent with having an almost pure s-process source. If the first ionization potential adjustments are applied

(r/s)CRS/(r/s)SS = 1.5^+1.1_-0.7

consistent with a solar system mixture.

Xe~(23+)离子辐照Al_2O_3的光谱特性

本工作研究460 keV、3 MeV和308 MeV Xe23+辐照Al2O3单晶样品的光致发光特性。从经过460 keV Xe23+辐照后样品的光致发光测试结果可看到,波长为380、413和450 nm的发光峰明显增强,在390和564 nm处出现了新的发光峰。从3 MeV的Xe23+辐照后样品谱的变化可看到,在较低剂量条件下,516 nm(2.4 eV)和564 nm(2.2 eV)处的发光峰随辐照剂量增加而增强,且当剂量增到1×1016cm-2时,564 nm处的发光峰消失,只有516 nm(2.4 eV)处的发光峰较强。从308 MeV Xe23+辐照后样品的光致发光谱中可看到,357 nm(3.47 eV)和516 nm(2.4 eV)处的发光峰随着剂量增加明显增强。辐照后样品的FTIR谱显示:波数在460~510 cm-1和630 cm-1附近的吸收是Al2O3振动模式,经离子辐照后,吸收带展宽;1 000~1 300 cm-1间为Al—O—Al桥氧键的伸缩振动模式,高能辐照后的吸收带向低波数方向移动。

高电荷态离子~(129)Xe~(28+)与Au和Mo表面作用产生的X射线谱

研究了高电荷态离子129Xe28+轰击金属Au和Mo表面产生的特征X射线谱。实验结果表明,在入射离子的电荷态和能量相同的条件下,对于核电荷数较小、原子质量较轻的靶原子,只有其内壳层的电子才能被激发而产生X射线,而核电荷数较大、原子质量较重的靶原子只有其较外壳层的电子能被激发而产生X射线。特征X射线的产额随入射离子动能的增加而增加。

高电荷态离子~(129)Xe~(q+)激发Au表面产生的X射线谱

目的研究高电荷态离子129Xeq+(q=28,29,30)入射金属Au表面产生的特征X射线谱。方法应用高电荷态离子束流激发。结果在束流强度小于139 nA条件下,单离子的X射线产额可达10-8量级,特征X射线的产额随入射离子的动能和势能(电荷态)的增加而增加。结论与传统的X射线产生方法不同,高电荷态离子可以激发重原子的内壳层特征X射线谱,其产额高,品质好。

~(129)Xe~(q+)入射金属表面激发的X射线谱

用高电荷态离子129Xeq+(q=25,26,27)轰击金属Au表面,产生Au原子的特征X射线谱.实验结果表明,足够高的电荷态低速离子激发靶表面原子,无需很强的束流强度(nA量级),便可有效地产生重原子的特征X谱线(Au,Mα),单离子X射线产额可达10-8量级,特征X射线的产额随入射离子的动能和势能(电荷态)的增加而增加.通过Au原子Mα的特征X射线谱,利用Heisenberg不确定关系对Au原子的第N能级寿命进行了估算.