A MEMS Light Modulator Based on Diffractive Nanohole Gratings

We present the design, fabrication, and testing of a microelectromechanical systems (MEMS) light modulator based on pixels patterned with periodic nanohole arrays. Flexure-suspended silicon pixels are patterned with a two dimensional array of 150 nm diameter nanoholes using nanoimprint lithography. A top glass plate assembled above the pixel array is used to provide a counter electrode for electrostatic actuation. The nanohole pattern is designed so that normally-incident light is coupled into an in-plane grating resonance, resulting in an optical stop-band at a desired wavelength. When the pixel is switched into contact with the top plate, the pixel becomes highly reflective. A 3:1 contrast ratio at the resonant wavelength is demonstrated for gratings patterned on bulk Si substrates. The switching time is 0.08 ms and the switching voltage is less than 15V.

MOCVD growth of cubic GaN: Materials and devices

Many impressive progresses have been made recently on the growth of cubic-phase GaN by MBE and MOCVD. In this paper, some of our recent progress will be reviewed, including the growth of high quality cubic InGaN films, InGaN/GaN heterostructure blue and green LEDs. Cubic-phase GaN films were grown on GaAs (100) substrates by MOCVD. Growth conditions were optimized to obtain pure cubic phase GaN films up to a thickness of 4 mum. An anomalous compressive strain was found in the as-grown GaN films in spite of a smaller lattice constant for GaN compared with that of GaAs substrates. The photoluminescence FWHM of high quality InGaN epilayers was less than 100 meV The InGaN/GaN heterostructure blue LED has intense electroluminescence with a FWHM of 20 nm.

Photonic integrated circuit for the manipulation of coherent optical combs

Photonic integration has become an important research topic in research for applications in the telecommunications industry. Current optical internet infrastructure has reached capacity with current generation dense wavelength division multiplexing (DWDM) systems fully occupying the low absorption region of optical fibre from 1530 nm to 1625 nm (the C and L bands). This is both due to an increase in the number of users worldwide and existing users demanding more bandwidth. Therefore, current research is focussed on using the available telecommunication spectrum more efficiently. To this end, coherent communication systems are being developed. Advanced coherent modulation schemes can be quite complex in terms of the number and array of devices required for implementation. In order to make these systems viable both logistically and commercially, photonic integration is required. In traditional DWDM systems, arrayed waveguide gratings (AWG) are used to both multiplex and demultiplex the multi-wavelength signal involved. AWGs are used widely as they allow filtering of the many DWDM wavelengths simultaneously. However, when moving to coherent telecommunication systems such as coherent optical frequency division multiplexing (OFDM) smaller FSR ranges are required from the AWG. This increases the size of the device which is counter to the miniaturisation which integration is trying to achieve. Much work was done with active filters during the 1980s. This involved using a laser device (usually below threshold) to allow selective wavelength filtering of input signals. By using more complicated cavity geometry devices such as distributed feedback (DFB) and sampled grating distributed Bragg gratings (SG-DBR) narrowband filtering is achievable with high suppression (>30 dB) of spurious wavelengths. The active nature of the devices also means that, through carrier injection, the index can be altered resulting in tunability of the filter. Used above threshold, active filters become useful in filtering coherent combs. Through injection locking, the coherence of the filtered wavelengths with the original comb source is retained. This gives active filters potential application in coherent communication system as demultiplexers. This work will focus on the use of slotted Fabry-Pérot (SFP) semiconductor lasers as active filters. Experiments were carried out to ensure that SFP lasers were useful as tunable active filters. In all experiments in this work the SFP lasers were operated above threshold and so injection locking was the mechanic by which the filters operated. Performance of the lasers under injection locking was examined using both single wavelength and coherent comb injection. In another experiment two discrete SFP lasers were used simultaneously to demultiplex a two-line coherent comb. The relative coherence of the comb lines was retained after demultiplexing. After showing that SFP lasers could be used to successfully demultiplex coherent combs a photonic integrated circuit was designed and fabricated. This involved monolithic integration of a MMI power splitter with an array of single facet SFP lasers. This device was tested much in the same way as the discrete devices. The integrated device was used to successfully demultiplex a two line coherent comb signal whilst retaining the relative coherence between the filtered comb lines. A series of modelling systems were then employed in order to understand the resonance characteristics of the fabricated devices, and to understand their performance under injection locking. Using this information, alterations to the SFP laser designs were made which were theoretically shown to provide improved performance and suitability for use in filtering coherent comb signals.

Montage et caractérisation d’un système de spectroscopie Raman accordable en longueur d’onde utilisant des réseaux de Bragg comme filtre : application aux nanotubes de carbone

La spectroscopie Raman est un outil non destructif fort utile lors de la caractérisation de matériau. Cette technique consiste essentiellement à faire l’analyse de la diffusion inélastique de lumière par un matériau. Les performances d’un système de spectroscopie Raman proviennent en majeure partie de deux filtres ; l’un pour purifier la raie incidente (habituellement un laser) et l’autre pour atténuer la raie élastique du faisceau de signal. En spectroscopie Raman résonante (SRR), l’énergie (la longueur d’onde) d’excitation est accordée de façon à être voisine d’une transition électronique permise dans le matériau à l’étude. La section efficace d’un processus Raman peut alors être augmentée d’un facteur allant jusqu’à 106. La technologie actuelle est limitée au niveau des filtres accordables en longueur d’onde. La SRR est donc une technique complexe et pour l’instant fastidieuse à mettre en œuvre. Ce mémoire présente la conception et la construction d’un système de spectroscopie Raman accordable en longueur d’onde basé sur des filtres à réseaux de Bragg en volume. Ce système vise une utilisation dans le proche infrarouge afin d’étudier les résonances de nanotubes de carbone. Les étapes menant à la mise en fonction du système sont décrites. Elles couvrent les aspects de conceptualisation, de fabrication, de caractérisation ainsi que de l’optimisation du système. Ce projet fut réalisé en étroite collaboration avec une petite entreprise d’ici, Photon etc. De cette coopération sont nés les filtres accordables permettant avec facilité de changer la longueur d’onde d’excitation. Ces filtres ont été combinés à un laser titane : saphir accordable de 700 à 1100 nm, à un microscope «maison» ainsi qu’à un système de détection utilisant une caméra CCD et un spectromètre à réseau. Sont d’abord présentés les aspects théoriques entourant la SRR. Par la suite, les nanotubes de carbone (NTC) sont décrits et utilisés pour montrer la pertinence d’une telle technique. Ensuite, le principe de fonctionnement des filtres est décrit pour être suivi de l’article où sont parus les principaux résultats de ce travail. On y trouvera entre autres la caractérisation optique des filtres. Les limites de basses fréquences du système sont démontrées en effectuant des mesures sur un échantillon de soufre dont la raie à 27 cm-1 est clairement résolue. La simplicité d’accordabilité est quant à elle démontrée par l’utilisation d’un échantillon de NTC en poudre. En variant la longueur d’onde (l’énergie d’excitation), différentes chiralités sont observées et par le fait même, différentes raies sont présentes dans les spectres. Finalement, des précisions sur l’alignement, l’optimisation et l’opération du système sont décrites. La faible acceptance angulaire est l’inconvénient majeur de l’utilisation de ce type de filtre. Elle se répercute en problème d’atténuation ce qui est critique plus particulièrement pour le filtre coupe-bande. Des améliorations possibles face à cette limitation sont étudiées.

The physics and technology of gallium antimonide: An emerging optoelectronic material

Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 1.55 mu m. The III-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices. Consequently, there has been tremendous upthrust in research activities of GaSb-based systems. As a matter of fact, this compound has proved to be an interesting material for both basic and applied research. At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication. This article presents an up to date comprehensive account of research carried out hitherto. It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility. An overview of the lattice, electronic, transport, optical and device related properties is presented. Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed. These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc. Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed. It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication. (C) 1997 American Institute of Physics.

Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (InyGa1-yAs/GaAs1-x Sb-x)/ GaAs bilayer quantum wells

Molecular beam epitaxy (MBE) growth of (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum well (BQW) structures has been investigated. It is evidenced by photo luminescence (PL) that a strong blue shift of the PL peak energy of 47 meV with increasing PL excitation power from 0.63 to 20 mW was observed, indicating type II band alignment of the BQW. The emission wavelength at room temperature from (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW is longer (above 1.2 μ m) than that from InGaAs/GaAs and GaAsSb/GaAs SQW structures (1.1 μ m range), while the emission efficiency from the BQW structures is comparable to that of the SQW. Through optimizing growth conditions, we have obtained room temperature 1.31 μ m wavelength emission from the (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW. Our results have proved experimentally that the GaAs-based bilayer (InyGa1-yAs/GaAs1-xSbx)/GaAs quantum well is a useful structure for the fabrication of near-infrared wavelength optoelectronic devices. © 2005 Elsevier B.V. All rights reserved.

GaInNAs/GaAs multiple-quantum well resonant-cavity-enhanced photodetectors at 1.3 mu m

A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced photodetector (RCF-PD) operated at a wavelength of 1.3 mum with the full width at half maximum of 4nm has been demonstrated. The GaInNAs RCE - PD was grown by molecular beam epitaxy using a homemade ion-removed dc plasma cell as a nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature, which is very beneficial for applications in long-wavelength absorption devices. For a 100 mum diameter RCE-PD, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is - 18 V. The measured 3 dB bandwidth is 308 MHz, which is limited by the resistance of p-type distributed Bragg reflector mirror. The tunable wavelength in a range of 18 nm with the angle of incident light was observed.

BAND-STRUCTURE OF MG1-XZNXSYSE1-Y

The empirical pseudopotential method within the virtual crystal approximation is used to calculate the band structure of Mg1-xZnySySe1-y, which has recently been proved to be a potential semiconductor material for optoelectronic device applications in the blue spectral region. It is shown that MgZnSSe can be a direct or an indirect semiconductor depending on the alloy composition. Electron and hole effective masses are calculated for different compositions. Polynomial approximations are obtained for both the energy gap and the effective mass as functions of alloy composition at the GAMMA valley. This information will be useful for the future design of blue wavelength optoelectronic devices as well as for assessment of their properties.

1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors

A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetector operating at 1.3 mum with the full-width at half-maximum of 5.5 nm was demonstrated. The GaInNAs RCE photodetector was grown by molecular-beam epitaxy using an ion-removed dc-plasma cell as nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature that is very beneficial for applications in long-wavelength absorption devices. For a 100-mum diameter RCE photodetector, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3-dB bandwidth is 308 MHz. The reasons resulting in the poor high speed property were analyzed. The tunable wavelength of 18 nm with the angle of incident light was observed.

Optical transitions in GaNAs/GaAs single quantum well

We have investigated GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL), time-resolved PL (TRPL) and photovoltaic (PV) techniques. The low temperature PL is dominated by spatially direct transitions involving electrons confined in GaNAs well and holes localized in the same GaNAs layer. This assignment was supported by PL decay time measurements and absorption line-shape analysis derived from the PV measurements. By fitting the experimental data with a simple calculation, the band offset of the GaN0.015As0.985/GaAS heterostructure was estimated, and a type II band lineup in GaN0.015As0.985/GaAs QWs was suggested. Moreover, DeltaE(C), the discontinuity of conductor band, is found to be a nonlinear function of the nitrogen (N) composition (x), and the average variation of DeltaE(C) is about 0.110eV per %N, The measured band bowing coefficient shows a strong function of x, giving an experimental support to the theoretic calculation of Wei et al [Ref.2].

Modulation magnesium-doping in AlGaN/GaN superlattices

Low resistivity of p-type Mg-doped AlGaN/GaN superlattices (SLs) is demonstrated. The resistivity of the SLs is less than 0.6 Omega .cm. and the measured hole concentration is higher than 1x10(18)cm(-3). The resistivity of SLs is much lower, and the hole concentration of SLs is much higher, than that of bulk GaN and AlGaN, The electrical properties of the SLs are less sensitive than the conventional bulk lavers.

Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures

Indium (In)-doping was applied in GaN layers during growth of AlGaN/GaN heterostructure with unintentionally doped or modulation Si-doped AlGaN layers. It was found that In-doping was effective in improving electron sheet density of two-dimensional-electron-gas (2DEG) in the heterostructures. Furthermore, In-doping also improved mobility in heterostructures with Si modulation-doped in AlGaN layers. The possible reasons were discussed. X-ray diffraction (XRD) and wet chemical etching revealed that crystalline quality of GaN was improved by In-doping. It was proposed that In-doping modified growth kinetics of GaN.

Dispersing Light with Surface Plasmon Polaritonic Crystals

Spectral dispersion of light on a finite-size surface plasmon polaritonic (SPP) crystal has been studied. The angular wavelength separation of one or more orders of magnitude higher than in other state-of-the-art wavelength-splitting devices available to date has been demonstrated. The two-stage process is responsible for the dispersion value, which involves conversion of the incident light into SPP Bloch modes of a nanostructure followed by the SPP Bloch waves refraction at the SPP crystal boundary. The high spectral dispersion achievable in plasmonic devices may be useful for integrated high-resolution spectroscopy in nanophotonic, optical communication and lab-on-a-chip applications.

Sistemas híbridos para mitigação de harmônicos: modelagem e estudos experimentais

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Low-loss waveguides fabricated by femtosecond chirped-pulse oscillator

Recent results on direct femtosecond inscription of straight low-loss waveguides in borosilicate glass are presented. We also demonstrate lowest ever losses in curvilinear waveguides, which we use as main building blocks for integrated photonics circuits. Low-loss waveguides are of great importance to a variety of applications of integrated optics. We report on recent results of direct femtosecond fabrication of smooth low-loss waveguides in standard optical glass by means of femtosecond chirped-pulse oscillator only (Scientific XL, Femtolasers), operating at the repetition rate of 11 MHz, at the wavelength of 800 nm, with FWHM pulse duration of about 50 fs, and a spectral widths of 30 nm. The pulse energy on target was up to 70 nJ. In transverse inscription geometry, we inscribed waveguides at the depth from 10 to 300 micrometers beneath the surface in the samples of 50 x 50 x 1 mm dimensions made of pure BK7 borosilicate glass. The translation of the samples accomplished by 2D air-bearing stage (Aerotech) with sub-micrometer precision at a speed of up to 100 mm per second (hardware limit). Third direction of translation (Z-, along the inscribing beam or perpendicular to sample plane) allows truly 3D structures to be fabricated. The waveguides were characterized in terms of induced refractive index contrast, their dimensions and cross-sections, mode-field profiles, total insertion losses at both 633 nm and 1550 nm. There was almost no dependence on polarization for the laser inscription. The experimental conditions – depth, laser polarization, pulse energy, translation speed and others, were optimized for minimum insertion losses when coupled to a standard optical fibre SMF-28. We found coincidence of our optimal inscription conditions with recently published by other groups [1, 3] despite significant difference in practically all experimental parameters. Using optimum regime for straight waveguides fabrication, we inscribed a set of curvilinear tracks, which were arranged in a way to ensure the same propagation length (and thus losses) and coupling conditions, while radii of curvature varied from 3 to 10 mm. This allowed us to measure bend-losses – they less than or about 1 dB/cm at R=10 mm radius of curvature. We also demonstrate a possibility to fabricate periodical perturbations of the refractive index in such waveguides with the periods using the same set-up. We demonstrated periods of about 520 nm, which allowed us to fabricate wavelength-selective devices using the same set-up. This diversity as well as very short time for inscription (the optimum translation speed was found to be 40 mm/sec) makes our approach attractive for industrial applications, for example, in next generation high-speed telecom networks.