Evolution of epitaxial graphene layers on 3C SiC/Si (111) as a function of annealing temperature in UHV

The growth of graphene on SiC/Si substrates is an appealing alternative to the growth on bulk SiC for cost reduction and to better integrate the material with Si based electronic devices. In this paper, we present a complete in-situ study of the growth of epitaxial graphene on 3C SiC (111)/Si (111) substrates via high temperature annealing (ranging from 1125˚C to 1375˚C) in ultra high vacuum (UHV). The quality and number of graphene layers have been thoroughly investigated by using x-ray photoelectron spectroscopy (XPS), while the surface characterization have been studied by scanning tunnelling microscopy (STM). Ex-situ Raman spectroscopy measurements confirm our findings, which demonstrate the exponential dependence of the number of graphene layer from the annealing temperature.

Epitaxial graphene growth on 3C SiC by Si sublimation in UHV

This thesis is a step forward in understanding the growth of graphene, a single layer of carbon atoms, by annealing Silicon Carbide (SiC) thin films in Ultra High Vacuum. The research lead to the discovery that the details of the transition from SiC to graphene, providing, for the first time, atomic resolution images of the different stages of the transformation and a model of the growth. The epitaxial growth of graphene developed by this study is a cost effective procedure to obtain this material directly on Si chips, a breakthrough for the future electronic industry.

Design of corona control rings for EHV/UHV line hardwares and substations

The components of EHV/UHV lines and substations can produce significant corona. To limit the consequent Radio Interference and Audible Noise on these systems, suitable corona control rings are employed. The shapes of these rings could vary from circular to rectangular with smooth bends. Many manufacturers seem to adopt trial and error method for arriving at the final design. As such neither the present testing standard nor the final design adopted consider the practical scenario like corona produced by deposition of dirt, bird droppings, etc. The present work aims to make a first step in addressing this practically important problem. This requires an accurate evaluation of the electric field and a reliable method for the evaluation of corona inception. Based on a thorough survey of pertinent literature, the critical avalanche criteria as applicable to large electrodes, has been adopted. Taking the rain drop on the surface as the biggest protrusion, conducting protrusions modeled as semi-ellipsoid is considered as representative for deposition of dust or the boundary of bird droppings etc. Through examples of 4 00 kV and 765 kV class toroidal corona rings, the proposed method is demonstrated. This work is believed to be useful to corona ring manufacturers for EHV/UHV systems.

Analysis of distance relay trip regions for EHV and UHV transmission lines

This paper presents comparative evaluation of the distance relay characteristics for UHV and EHV transmission lines. Distance protection relay characteristics for the EHV and UHV systems are developed using Electromagnetic Transients (EMT) program. The variation of ideal trip boundaries for both the systems are presented. Unlike the conventional distance protection relay which uses a lumped parameter model, this paper uses the distributed parameter model. The effect of larger shunt susceptance on the trip boundaries is highlighted. Performance of distance relay with ideal trip boundaries for EHV and UHV lines have been tested for various fault locations and fault resistances. Electromagnetic Transients (EMT) program has been developed considering distributed parameter line model for simulating the test systems. The voltage and current phasors are computed from the signals using an improved full cycle DFT algorithm taking 20 samples per cycle. Two practical transmission systems of Indian power grid, namely 765 kV UHV transmission line and SREB 24-bus 400kV EHV system are used to test the performance of the proposed approach.

Control of switching surges due to energization of 765kV UHV transmission line

Reduction of switching surge over voltages allows an economic design of UHV transmission system with reduced insulation. The various means of switching surge over voltage control with pre-insertion resistors/closing resistors, shunt re-actors and controlled switching are illustrated. The switching surge over voltages during the energization of series compensated line are compared with uncompensated line. An Electromagnetic transients program has been developed for studying the effect of various means of control of switching transients during 765kV UHV transmission line energization. This paper presents the studies carried out on switching surges control in 765kV UHV transmission line energization.

Support vector machine based high speed protection relay for EHV/UHV transmission line

This paper presents a fast and accurate relaying technique for a long 765kv UHV transmission line based on support vector machine. For a long EHV/UHV transmission line with large distributed capacitance, a traditional distance relay which uses a lumped parameter model of the transmission line can cause malfunction of the relay. With a frequency of 1kHz, 1/4th cycle of instantaneous values of currents and voltages of all phases at the relying end are fed to Support Vector Machine(SVM). The SVM detects fault type accurately using 3 milliseconds of post-fault data and reduces the fault clearing time which improves the system stability and power transfer capability. The performance of relaying scheme has been checked with a typical 765kV Indian transmission System which is simulated using the Electromagnetic Transients Program(EMTP) developed by authors in which the distributed parameter line model is used. More than 15,000 different short circuit fault cases are simulated by varying fault location, fault impedance, fault incidence angle and fault type to train the SVM for high speed accurate relaying. Simulation studies have shown that the proposed relay provides fast and accurate protection irrespective of fault location, fault impedance, incidence time of fault and fault type. And also the proposed scheme can be used as augmentation for the existing relaying, particularly for Zone-2, Zone-3 protection.

Sil-xGe/Si异质结材料UHV/CVD生长及其特性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

UHV/CVD生长弛豫SiGe和SiGe/Si II型量子阱的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z