UHV/CVD生长弛豫SiGe和SiGe/Si II型量子阱的研究
| Contribuinte(s) |
王启明 余金中 |
|---|---|
| Data(s) |
2000
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z Made available in DSpace on 2009-04-13T11:45:31Z (GMT). Made available in DSpace on 2009-07-09T01:35:29Z (GMT). No. of bitstreams: 1 disk/eh2000/ldz.pdf: 19659727 bytes, checksum: e0f96a965e497ec677eab52ba5452001 (MD5) Previous issue date: 2000 |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
李代宗.UHV/CVD生长弛豫SiGe和SiGe/Si II型量子阱的研究.[博士].北京.中国科学院半导体研究所.2000 |
| Palavras-Chave | #半导体物理与半导体器件物理 |
| Tipo |
学位论文 |
