Meshless TL and UL approaches for large deformation analysis

To accurately and effectively simulate large deformation is one of the major challenges in numerical modeling of metal forming. In this paper, an adaptive local meshless formulation based on the meshless shape functions and the local weak-form is developed for the large deformation analysis. Total Lagrangian (TL) and the Updated Lagrangian (UL) approaches are used and thoroughly compared each other in computational efficiency and accuracy. It has been found that the developed meshless technique provides a superior performance to the conventional FEM in dealing with large deformation problems for metal forming. In addition, the TL has better computational efficiency than the UL. However, the adaptive analysis is much more efficient using the UL approach than using in the TL approach.

TlCaBa2Cu2O7: The 1122 (90 K) superconductor in the new Tl(Ca,Ba)n+1CunO2n+3 seriesstar, open

The 1122 (n=2) member of the Tl(Ca,Ba)n+1CunO2n+3 series containing a single Tl-O layer is shown to be associated with a Tc of 90 K. This value of Tc is significantly lower than that of the 2122 phase (Tcnot, vert, similar110 K) with two Tl-O layers.

Editorial - TL Forum 2015: Teaching and learning uncapped

The authors discuss the teaching and learning forum and the number of submissions to its staff from 2006-2015.

A possible mechanism for high-temperature superconductivity: Application to Bi and Tl compounds

We applied our previous theory of high temperature superconductivity to Bi and Tl compounds in this paper. The theory involves the role of electron pairs in the spin singlet of species Xequal-or-greater, slanted (Bi3+ (6S2), Tl(6S2) etc.) and their virtual excited state X0 (Bi5+ (6s0), Tl3+ (6s0), etc.) in the pairing interaction of quasiholes. Bi and Tl species provide additional channels of kind (Xequal-or-greater, slanted left angle bracket X0) owing to the charge fluctuations. We treated the two states of these species like a two-level Bose system. We used the pseudospin formalism to calculate the expression for the critical temperature in this paper. We also calculated numerically the value of Tc for Bi and Tl compounds and found a good agreement between theory and experiment.

Studies on electrical switching behavior of As-Te-Tl glasses - effect of local structure on switching type and composition dependence of switching voltages

Bulk As-Te-Tl glasses belonging to the As30Te70-xTlx (4 <= x <= 22) and As40Te60-xTlx (5 <= x <= 20) composition tie lines are studied for their I-V characteristics. Unlike other As-Te-III glasses such as As-Te-Al and As-Te-In, which exhibit threshold behavior, the present samples show memory switching. The composition dependence of switching voltages (V-t) of As-Te-Tl glasses is also different from that of As-Te-Al and As-Te-In glasses, and it is found that V-t decreases with the addition of Tl. Both the type of switching exhibited by As-Te-Tl glasses and the composition dependence of V-t, seems to be intimately connected with the nature of bonding of Tl atoms and the resultant structural network. Furthermore, the temperature and thickness dependence of switching voltages of As-Te-Tl glasses suggest an electro thermal mechanism for switching in these samples.

Superconductivity in the 100–120 K region in oxides of the Tl-Ca-Ba-Cu-O system

Oxides with different cation ratios 2122, 2212, 2213 and 2223 in the Ti-Ca-Ba-Cu-O system exhibit onset of superconductivity in the 110–125 K range with zero-resistance in the 95–105 K range. Electron microscopic studies show dislocations, layered morphology and other interesting features. These oxides absorb electromagnetic radiation (9.11 GHz) in the superconducting phase.

Superconductivity in Ba(Pb,Bi,Sb)O3, Ba(Pb,Bi,Te)O3 and (Ba,La) (Pb,Bi,Tl)O3 systems

It is possible to substitute Bi in the superconducting BaPb0.75Bi0.25O3 by Sb or Te without destroying the superconductivity. With Sb, a continuous series of solid solutions BaPb0.75Bi0.25?ySbyO3 (0 less-than-or-equals, slant y less-than-or-equals, slant 0.25) exists, while with Te, perovskite BaPb0.75Bi0.25?yTeyO3 exists only upto y = 0.15. With increasing substitution by Sb or Te, Tc decreases continously in both the systems. Superconductivity with a maximum Tc of 8K is found in Ba0.9La0.1Pb0.9?yBiyTl0.1O3 for y = 0.25.

Electrical switching studies on Ge-Te-Tl chalcogenide glasses: Effect of thallium on the composition dependence of switching voltages

Bulk Ge(17)Te83_,JI glasses (05x.5_13), have been found to exhibit memory type electrical switching. The switching voltages (also known as threshold voltage V-th) of Ge17Te83-xTlx glasses are found to decrease with increasing thallium content. The rate of decrease of Vtry is greater at lower concentrations and \textbackslashid, falls at a slower rate for higher thallium concentrations (x 6). The addition of thallium to the Ge-Te network fragments the covalent network and introduces ionic nature to it; the reduction in network connectivity leads to the decrease in switching voltages with thallium content. The decrease in the glass transition temperatures of Ge17Te83-xTlx glasses with increasing thallium concentration supports the idea of decrease in network connectivity with TI addition. The more metallic nature of TI also contributes to the observed reduction in the switching voltages of Ge17Te83-xTlx glasses with TI content. Further, there is an interesting correlation seen between the threshold voltage V-th and the average bond energy, as a function of TI content. In addition, the switching voltages of Ge17Te83-xTlx glasses have been found to decrease with sample thickness almost linearly. The set-reset studies indicate that the Ge17Te83-xTl2 sample can be switched for more than 10 cycles, whereas other glasses could not be reset beyond two switching cycles. (C) 2010 Elsevier B.V. All rights reserved.

Synthesis of Cuprates of Perovskite Structure in the Ba-Pb-Cu-O, Ba-Bi-Cu-O, and Ba-Pb-Tl-Cu-O Systems: Possible High Tc Superconductivity in a Perovskite-like Phase in the Ba-Pb-Tl-Cu-O System

Cubic cuprates (a not, vert, similar 18.6 Å) with a BaCuO2-type structure were obtained in the Ba-Pb-Cu-O and Ba-Bi-Cu-O systems by the reaction of the component oxides at a high temperature (1370-1420 K), followed by quenching. By annealing these phases in oxygen at 1070-1120 K, perovskite-like phase (a not, vert, similar 4.3 Å) of the formulae BaPb1-xCuxO3-y and BaBi1-xCuxO3-y (0 < x ? 0.5) were obtained. A perovskite of nominal composition BaPb0.25Tl0.25 Cu0.5O3-y, prepared by a similar procedure, was found to be superconducting with a Tc of not, vert, similar 70 K.

Thermal diffusivity measurements on ternary Ge-Te-Tl glasses using Photo-thermal Deflection method: Effect of thallium addition

Photo-thermal Deflection (PTD) technique is used to investigate the thermal diffusivity (alpha) of Ge17Te83 - xTlx (0 <= x <= 13) glasses as a function of composition. The thermal diffusivity of these glasses is found to lie in the range 0.020 to 0.048 cm(2)/s, which is consistent with the memory type of electrical switching exhibited by these samples. Further, it is found that alpha shows an initial increase with Tl addition, followed by a decrease. The observed composition dependence of thermal diffusivity has been understood on the basis that the thallium atoms are incorporated as a covalent species for lower values of x, increasing the network rigidity; however, they enter as ionic species for higher x values, fragmenting the network. The initial increase in a is due to the increasing network rigidity and the subsequent decrease is because of the fragmentation of the network. Also, there is a strong correlation between the composition dependence of switching voltages observed earlier and the variation with composition of electrical resistivity and thermal diffusivity of Ge17Te83 - xTlx glasses obtained in the present study. (C) 2012 Elsevier B.V. All rights reserved.

High pressure studies on the electrical resistivity of Ge-Te-Tl glasses

The variation of electrical resistivity in the system of glasses Ge17Te83-xTlx, with (1 <= x <= 13), has been studied as a function of high pressure for pressures up to 10 GPa. It is found that the normalized electrical resistivity decreases continuously with the increase in pressure and shows a sudden drop at a particular pressure (transition pressure), indicating the presence of a transition from semiconductor to near-metallic at these pressures which are in the range 3.0-5.0 GPa. This transition pressure is seen to decrease with the increase in the percentage content of thallium due to increasing metallicity of the thallium. The transition is reversible under application of pressure and X-ray diffraction of samples recovered after pressurization show that they remain amorphous after undergoing a pressurization decompression cycle.

EVIDENCE FOR TWO TELLURIUM SITES IN DILUTE LIQUID Te-Tl ALLOYS.

Recently, experimental evidence was presented which suggests that as the stoichiometric composition CuTe, NiTe, Tl//2Te and MnTe are approached from pure Te in the liquid state, substantial charge transfer takes place and Te exists in the form Te**y**31 ions with y close to 2. The system studied (Te-Tl) is one in which charge transfer localizes electrons on the tellurium and leads to semiconducting behavior at the stoichiometric composition Tl//2Te.