Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities

Strongly enhanced light emission at wavelengths between 1.3 and 1.6 μm is reported at room temperature in silicon photonic crystal (PhC) nanocavities with optimized out-coupling efficiency. Sharp peaks corresponding to the resonant modes of PhC nanocavities dominate the broad sub-bandgap emission from optically active defects in the crystalline Si membrane. We measure a 300-fold enhancement of the emission from the PhC nanocavity due to a combination of far-field enhancement and the Purcell effect. The cavity enhanced emission has a very weak temperature dependence, namely less than a factor of 2 reduction between 10 K and room temperature, which makes this approach suitable for the realization of efficient light sources as well as providing a quick and easy tool for the broadband optical characterization of silicon-on-insulator nanostructures. © 2011 American Institute of Physics.

Integration of silicon plasmonic schottky photodetector for on chip signal tapping at telecom wavelengths

We experimentally demonstrate the use of an on-chip integrated Schottky plasmonic detector for testing, monitoring and tapping signals in plasmonic and photonic devices. Theoretical model and measurement of external and integrated devices will be presented. © OSA 2013.

Integration of silicon plasmonic schottky photodetector for on chip signal tapping at telecom wavelengths

We experimentally demonstrate the use of an on-chip integrated Schottky plasmonic detector for testing, monitoring and tapping signals in plasmonic and photonic devices. Theoretical model and measurement of external and integrated devices will be presented. © OSA 2013.

Integration of silicon plasmonic schottky photodetector for on chip signal tapping at telecom wavelengths

We experimentally demonstrate the use of an on-chip integrated Schottky plasmonic detector for testing, monitoring and tapping signals in plasmonic and photonic devices. Theoretical model and measurement of external and integrated devices will be presented. © OSA 2013.

Silicon-metal waveguide as a high efficiency Schottky detector for telecom wavelengths

We demonstrate an integrated on-chip compact and high efficiency Schottky detector for telecom wavelengths based on silicon metal waveguide. Detection is based on the internal photoemission process. Theory and experimental results are discussed. © 2012 OSA.

On chip plasmonic enhanced silicon Schottky detector for telecom wavelengths

We demonstrate an integrated on-chip plasmonic enhanced Schottky detector for telecom wavelengths based on the internal photoemission process. This CMOS compatible device may serve as a promising alternative to the Si-Ge detectors. © 2012 OSA.

Locally-oxidized silicon surface-plasmon Schottky detector for telecom wavelengths

We demonstrate an integrated on-chip locally-oxidized silicon surface-plasmon Schottky detector for telecom wavelengths based on the internal photoemission process. Theoretical model and experimental results will be presented and discussed. © 2011 IEEE.

On chip plasmonic enhanced silicon schottky detector for telecom wavelengths

We demonstrate an integrated on-chip plasmonic enhanced Schottky detector for telecom wavelengths based on the internal photoemission process. This CMOS compatible device may serve as a promising alternative to the Si-Ge detectors. © 2011 Optical Society of America.

Silicon-metal waveguide as a high efficiency schottky detector for telecom wavelengths

We demonstrate an integrated on-chip compact and high efficiency Schottky detector for telecom wavelengths based on silicon metal waveguide. Detection is based on the internal photoemission process. Theory and experimental results are discussed. © 2012 Optical Society of America.

Locally-oxidized silicon surface-plasmon Schottky detector for telecom wavelengths

We demonstrate an integrated on-chip locally-oxidized silicon surface-plasmon Schottky detector for telecom wavelengths based on the internal photoemission process. Theoretical model and experimental results will be presented and discussed. © 2011 Optical Society of America.

Nonresonant third-order nonlinearity of antimony glasses at telecom wavelengths

We report measurements of the nonresonant nonlinear refractive index n(2) in antimony glasses at telecom wavelengths. The measurements were performed using the Z-scan technique with a 130 fs pulsed laser operating at five wavelengths in the range of 1400-1600 nm. Values of n(2)approximate to 10(-15) cm(2)/W were measured and a negligible two-photon absorption coefficient (< 0.003 cm/GW) was estimated for all glasses compositions. The samples present a good figure of merit for ultrafast all-optical switching. (c) 2006 American Institute of Physics.

Antimony glasses with large nonlinear refractive indices, small two-photon absorption coefficients and ultrafast response at telecom wavelengths

Nonlinear (NL) optical properties of antimony oxide based glasses (AG) were characterized for excitation wavelengths from 800 to 1600 m. The NL refractive indices, n2, and the two-photon absorption (TPA) coefficient, β, have been evaluated using the Z-scan technique. Values of n2≈ 10-15 - 10-14 cm2/W of electronic origin were measured and negligible TPA coefficients (β < 0.003 cm/GW) were determined. The response time of the nonlinearity is faster than 100 fs as determined using the Kerr shutter technique. The figure-of-merit usually considered for all-optical switching, T = 2βλ/n2 , indicates that AG are very good materials for ultrafast switches at telecom wavelengths. © 2007 IEEE.

Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band.

We experimentally demonstrate an on-chip compact and simple to fabricate silicon Schottky photodetector for telecom wavelengths operating on the basis of internal photoemission process. The device is realized using CMOS compatible approach of local-oxidation of silicon, which enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. The photodetector demonstrates enhanced internal responsivity of 12.5mA/W for operation wavelength of 1.55µm corresponding to an internal quantum efficiency of 1%, about two orders of magnitude higher than our previously demonstrated results [22]. We attribute this improved detection efficiency to the presence of surface roughness at the boundary between the materials forming the Schottky contact. The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.

Locally oxidized silicon surface-plasmon Schottky detector for telecom regime.

We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligned approach of local-oxidation of silicon (LOCOS) on silicon on insulator substrate, which provides compatibility with standard complementary metal-oxide semiconductor technology and enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. Additionally, LOCOS technique allows avoiding lateral misalignment between the silicon surface and the metal layer to form a nanoscale Schottky contact. The fabricated devices showed enhanced detection capability for shorter wavelengths that is attributed to increased probability of the internal photoemission process. We found the responsivity of the nanodetector to be 0.25 and 13.3 mA/W for incident optical wavelengths of 1.55 and 1.31 μm, respectively. The presented device can be integrated with other nanophotonic and nanoplasmonic structures for the realization of monolithic opto-electronic circuitry on-chip.

Locally oxidized silicon surface-plasmon Schottky detector for telecom regime

We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligned approach of local-oxidation of silicon (LOCOS) on silicon on insulator substrate, which provides compatibility with standard complementary metal-oxide semiconductor technology and enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. Additionally, LOCOS technique allows avoiding lateral misalignment between the silicon surface and the metal layer to form a nanoscale Schottky contact. The fabricated devices showed enhanced detection capability for shorter wavelengths that is attributed to increased probability of the internal photoemission process. We found the responsivity of the nanodetector to be 0.25 and 13.3 mA/W for incident optical wavelengths of 1.55 and 1.31 μm, respectively. The presented device can be integrated with other nanophotonic and nanoplasmonic structures for the realization of monolithic opto-electronic circuitry on-chip. © 2011 American Chemical Society.