Weak rectifying behaviour of p-SnS/n-ITO heterojunctions

This work explores the electrical properties of p-SnS/n-ITO heterojunction at different temperatures. The p-type SnS film was deposited on n-type ITO substrate using the thermal evaporation technique and its junction properties were studied using two probe method. The as-grown p-n junction exhibited weak rectifying behaviour with a low Saturation current of the order of similar to 10(-6) A. While increasing temperature, the saturation current of the junction is increased and however, its series resistance decreased. At all temperatures the junction exhibited three types of transport mechanisms depending on applied bias-voltage. At lower voltages the junction showed nearly ideal diode characteristics. The junction behaviour with respect to bias-voltage and temperature is discussed with the help of existing theories and energy band diagram.

Influence of rapid thermal annealing (RTA) on the structural and electrical properties of SnS films

The performance of optoelectronic devices critically depends on the quality of active layer. An effective way to obtain a high quality layers is by creating excess of metal atoms through various heat treatments. Recently, rapid thermal annealing (RTA) has proved a versatile technique for the post-treatment of semiconductor materials as compared to other techniques due to its precise control over the resources. Thus, we carried out a set of experiments on SnS films to explore the influence of RTA treatment on their properties. From these experiments we noticed that the films treated at 400 °C for 1 min in N2 atmosphere have a low electrical resistivity of ~5 Ωcm with relatively high Hall mobility and carrier density of 99 cm2/Vs and 1.3 × 1016 cm−3, respectively. The observed results, therefore, emphasise that it is possible to obtain good quality SnS films through RTA treatment without disturbing their crystal structure.

Temperature dependent structural properties of nanocrystalline SnS structures

This letter explores the structural behavior of nanocrystalline tin mono sulfide (SnS) structures with respect to temperature (100-600 K). These studies emphasize that the structural properties of SnS nanocrystalline structures depend on the surrounding temperature. The lattice parameters of SnS nanocrystals slightly varied like their microstructures with the increase of temperature. These changes strongly influence the optical properties of SnS nanostructures. On the other hand, the structures exhibited higher strain (similar to 0.44%) than that of microstructured (0.3%) and bulk (0.12%) counterparts. The observed results are discussed under the light of existing concepts and reported.

Optimization of the distance between source and substrate for device-grade SnS films grown by the thermal evaporation technique

Tin monosulfide (SnS) films with varying distance between the source and substrate (DSS) were prepared by the thermal evaporation technique at a temperature of 300 degrees C to investigate the effect of the DSS on the physical properties. The physical properties of the as-deposited films are strongly influenced by the variation of DSS. The thickness, Sn to S at.% ratio, grain size, and root mean square (rms) roughness of the films decreased with the increase of DSS. The films grown at DSS = 10 and 15 cm exhibited nearly single-crystalline nature with low electrical resistivity. From Hall-effect measurements, it is observed that the films grown at DSS <= 15 cm have p-type conduction and the films grown at higher distances have n-type conduction due to the variation of the Sn/S ratio. The films grown at DSS = 15 cm showed higher optical band gap of 1.36 eV as compared with the films grown at other distances. The effect of the DSS on the physical properties of SnS films is discussed and reported.

The physical properties of SnS films grown on lattice-matched and amorphous substrates

The development of high-quality tin monosulphide (SnS) layers is one of the crucial tasks in the fabrication of efficient SnS-based optoelectronic devices. Reduction of strain between film and the substrate by using an appropriate lattice-matched (LM) substrate is a new attempt for the growth of high-quality layers. In this view, the SnS films were deposited on LM Al substrate using the thermal evaporation technique with a low rate of evaporation. The as-grown SnS films were characterized using appropriate techniques and the obtained results are discussed by comparing them with the properties of SnS films grown on amorphous substrate under the same conditions. From structural analysis of the films, it is noticed that the SnS films deposited on amorphous substrate have crystallites that were oriented along different directions. However, the SnS crystallites grown on Al substrate exhibited epitaxial growth along the 101] direction. Photoluminescence (PL) and Raman studies reveal that the films grown on Al substrate have better optical properties than those of the films grown on amorphous substrates. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth of Orthorhombic SnS Nanobox Structures on Seeded Substrates

Tin sulfide (SnS) nanostructures have been synthesized using a simple and low temperature chemical solution method on seeded substrates, and their structural and optical properties have been investigated. The as-grown SnS nanostructures with well-defined facets exhibited good stoichiometry between constituent elements. These nanobox structures are preferentially oriented along the 010] direction by having 100] and 001] orientations as surrounding facets and exhibited Two distinguishable optical band gaps of 1.36 and 1.9 eV. The effect of solution concentration as well as seed layer on the morphology or SnS structures has also been studied, and finally, the growth mechanism of the regular SnS nanobox structures is proposed.

Optical and electrical properties of SnS semiconductor crystals grown by physical vapor deposition technique

Tin sulfide (SnS) is a material of interest for use as an absorber in low cost solar cells. Single crystals of SnS were grown by the physical vapor deposition technique. The grown crystals were characterized to evaluate the composition, structure, morphology, electrical and optical properties using appropriate techniques. The composition analysis indicated that the crystals were nearly stoichiometric with Sn-to-S atomic percent ratio of 1.02. Study of their morphology revealed the layered type growth mechanism with low surface roughness. The grown crystals had orthorhombic structure with (0 4 0) orientation. They exhibited an indirect optical band gap of 1.06 eV and direct band gap of 1.21 eV with high absorption coefficient (up to 10(3) cm(-1)) above the fundamental absorption edge. The grown crystals were of p-type with an electrical resistivity of 120 Omega cm and carrier concentration 1.52 x 10(15) cm(-3). Analysis of optical absorption and diffuse reflectance spectra showed the presence of a wide absorption band in the wavelength range 300-1200 nm, which closely matches with a significant part of solar radiation spectrum. The obtained results were discussed to assess the suitability of the SnS crystal for the fabrication of optoelectronic devices. (C) 2011 Elsevier B.V. All rights reserved.

Epitaxial LaNiO3 thin films: A normal metal barrier for SNS junction

Epitaxial LaNiO3 thin films have been grown on SrTiO3 and several other substrates by pulsed laser deposition. The films are observed to be metallic down to 15 K, and the temperature dependence of resistivity is similar to that of bulk LaNiO3. Epitaxial, c-axis oriented YBa2Cu3O7-x films with good superconducting properties have been grown on the LaNiO3 (100) films. I-V characteristics of the YBa2Cu3O7-x-LaNiO3 junction are linear, indicating ohmic contact between them.

Structural, electrical, and optical properties of as-grown and heat treated ultra-thin SnS films

The composition, structural, electrical, and optical properties of as-grown and heat treated tin-mono-sulfide (SnS) ultra-thin films have been studied. The ultra-thin SnS films were prepared on glass substrates by thermal resistive evaporation technique. All the SnS films contained nanocrystallites and exhibited p-type conductivity with a low Hall-mobility, <50 cm(2)/Vs. All these films are highly tin rich in nature and exhibited orthorhombic crystal structure. As compared to other films, the SnS films annealed at 300 degrees C showed a low electrical resistivity of similar to 36 Omega cm with an optical band gap of similar to 1.98 eV. The observed electrical and optical properties of all the films are discussed based on their composition and structural parameters. These nanocrystalline ultra-thin SnS films could be expected as a buffer layer for the development of tandem solar cell devices due to their low-resistivity and high absorbability with an optimum band gap. (C) 2011 Elsevier B.V. All rights reserved.

Growth and photovoltaic performance of SnS quantum dots

Tin sulphide (SnS) quantum dots of size ranging from 2.4 to 14.4 nm are prepared by chemical precipitation method in aqueous media. Growth of the SnS particles is monitored by controlling the deposition time. Both XRD and SAED patterns confirm that the particles possess orthorhombic structure. The uncapped SnS particles showed secondary phases like Sn2S3 and SnS2 which is visible in the SAED pattern. From the electrochemical characterization. HOMO-LUMO levels of both TiO2 and SnS are determined and the band alignment is found to be favorable for electron transfer from SnS to TiO2. Moreover, the HOMO-LUMO levels varied for different particle sizes. Solar cell is fabricated by sensitizing porous TiO2 thin film with SnS QDs. Cell structure is characterized with and without buffer layer between FTO and TiO2. Without the buffer layer, cell showed an open circuit voltage (V-oc) of 504 mV and short circuit current density (J(sc)) of 2.3 mA/cm(2) under AM1.5 condition. The low fill factor of this structure (15%) is seen to be increased drastically to 51%, on the incorporation of the buffer layer. The cell characteristics are analyzed using two different size quantum dots. (C) 2012 Elsevier B.V. All rights reserved.

In situ structural studies on orthorhombic SnS micro-crystals

In situ powder X-ray diffraction (XRD) studies on 3D micro-crystalline tin (II) sulfide (SnS) were carried out at different temperatures. While increasing temperature, the crystal structure of SnS remains stable as orthorhombic, whereas its lattice parameters and unit-cell volume are considerably varied. Further, these 3D micro-crystalline structures have showed a negative thermal expansion along the a-axis and positive expansion along the b- and c-axes. However, the overall drop along the a-axis of SnS crystals is nearly equal to their expansion along the c-axis. The observed changes in the structural properties of SnS micro-crystallites with temperature are discussed and reported.

Impact of chemical treatment on the surface, structure, optical and electrical properties of SnS thin films

The impact of chemical treatment on the surface morphology and other physical properties of tin monosulphide (SnS) thin films have been investigated. The SnS films treated with selected organic solvents exhibited strong improvement in their crystalline-quality and considerable decrease in electrical resistivity. Particularly, the films treated with chloroform showed very low electrical resistivity of similar to 5 Omega cm and a low optical band gap of 1.81 eV as compared to untreated and treated SnS films with other chemicals. From these studies we realized that the chemical treatment of SnS films has strong impact on their surface morphology and also on other physical properties. (C) 2012 Elsevier B.V. All rights reserved.

Growth-temperature dependent physical properties of SnS nanocrystalline thin films

In this article we have demonstrated the influence of growth-temperature on the morphology and orientation of SnS films deposited by thermal evaporation technique. While increasing the growth-temperature, the morphology of SnS films changed from flakes-like nanocrystals to regular cubes, whereas their orientation shifted from <111> to <040> direction. The chemical composition of SnS films gradually changed from sulfur-rich to tin-rich with the increase of growth-temperature. The structural analyzes reveal that the crystal structure of SnS films probably changes from orthorhombic to tetragonal at the growth-temperature of about 410 degrees C. Raman studies show that SnS films grown at all temperatures consist of purely SnS phase, whereas the optical studies reveal that the direct optical bandgap of SnS films decreased with the increase of growth-temperature. From these results it has been emphasized that the morphology and orientation along with electrical and optical properties of nearly stoichiometric SnS films strongly depend on their growth-temperature.

Photovoltaic structures using thermally evaporated SnS and CdS thin films

Polycrystalline tin sulfide thin films were prepared by thermal evaporation technique. The films grown at substrate temperature of 300 degrees C had an orthorhombic crystal structure with strong preferred orientation along (111) plane. Electrical resistivity of the deposited films was about 32.5 Omega cm with a direct optical band gap of 1.33 eV. Carrier concentration and mobility of charge carriers estimated from the Hall measurement were found to be 6.24 x 10(15) cm(-3) and 30.7 cm(2)V(-1) s(-1) respectively. Heterojunction solar cells were fabricated in superstrate configuration using thermally evaporated SnS as an absorber layer and CdS, In: CdS as window layer. The resistivity of pure CdS thin film of a thickness of 320 nm was about 1-2 Omega cm and was reduced to 40 x 10(-3) Omega cm upon indium doping. The fabricated solar cells were characterized using solar simulator. The solar cells with indium doped CdS window layer showed improved performance as compared to pure CdS window layer. The best device had a conversion efficiency of 0.4% and a fill factor of 33.5%. (C) 2013 Elsevier B.V. All rights reserved.

Stable and low resistive zinc contacts for SnS based optoelectronic devices

The contact behavior of tin mono sulfide (SnS) nanocrystalline thin films with zinc (Zn) and silver (Ag) contacts was studied. SnS films have been deposited on glass substrates by thermal evaporation technique at a growth temperature of 300 degrees C. The as-grown SnS films composed of vertically aligned nanocrystallites with a preferential orientation along the < 010 > direction. SnS films exhibited excellent chemical stoichiometry and direct optical band gap of 1.96 eV. These films also exhibited excellent Ohmic characteristics and low electrical resistivity with Zn contacts. The observed electrical resistivity of SnS films with Zn contacts is 22 times lower than that of the resistivity with Ag contacts. The interfacing analysis reveals the formation of conductive Zn-S layer between SnS and Zn as interfacial layer. (C) 2014 Elsevier B. V. All rights reserved.